CYStech MTNK3N3 Schematic [ru]
CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 1/6
BVDSS 20V
MTNK3N3
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
Symbol Outline
ID 100mA
RDSON
SOT-23 MTNK3N3
D
3Ω
G：Gate
S：Source
G
D：Drain
S
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Drain-Source Voltage BVDSS 20 V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
(Ta=25°C)
VGS
I
D
I
DM
P
D
Tj
Rth,ja
±8 V
100 mA
400 *1 mA
300 mW
350 *2 V
-55~+150
417
°C
°C/W
MTNK3N3 CYStek Product Specification
Spec. No. : C447N3
CYStech Electronics Corp.
Issued Date : 2010.08.18
Revised Date :
Page No. : 2/6
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
V
R
20 - - V VGS=0, ID=100μA
DSS
0.5 - 1.0 V VDS=VGS, ID=250μA
GS(th)
±
I
- -
GSS
I
- - 500 nA VDS=20V, VGS=0
DSS
DS(ON)
- 1.7 3 VGS=4.5V, ID=100mA
- 3.5 6
1
μA
Ω
VGS=±8V, VDS=0
VGS=1.8V, ID=20mA
GFS 100 - - mS VDS=5V, ID=100mA
Dynamic
C
- 23 50
iss
C
- 7.7 25
oss
C
- 5.8 5
rss
pF VDS=10V, VGS=0, f=1MHz
Source-Drain Diode
*VSD - - 1 V VGS=0V, IS=10mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking
MTNK3N3
(Pb-free)
Typical Characteristics
Typical Output Characteristics
0.7
5V
Drain C urrent - ID(A)
0.6
0.5
0.4
0.3
0.2
0.1
SOT-23
4.5V
4.0V
3.5V
3V
2.5V
2.0V
1.8V
VGS= 1.5V
3000 pcs / Tape & Reel K3
Typical Transfer Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Drain Current -ID(A)
0.1
VDS= 3V
0
01234
Drain-Source Volta ge -VDS(V)
0
0123456
Gate-Source Voltage-VGS(V)
MTNK3N3 CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date :
Page No. : 3/6
10
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Source-Drain Voltage-VSD(V)
0.2
0.1
350
Static Drain-Source On-State resistance vs Drain Current
VGS=1.8V
VGS= 4.5V
1
0.001 0.01 0.1 1
Drain Current-ID(A)
Reverse Drain Current vs Source-Drain Voltage
1
00.10.20.30
Reverse Drain Current -IDR(A)
Power Derating Curve
.4
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
7
6
5
4
3
2
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
1
0
024681
ID=100mA
ID=20mA
0
Gate-Source Voltage-VGS(V)
Capacitance vs Drain-to-Source Voltage
100
Ciss
C
10
Capacitance---(pF)
1
0.1 1 10 100
Drain-Source Voltage -VDS(V)
oss
Crss
300
250
200
150
100
Power Dissipation---PD(mW)
50
0
0 50 100 150 200
Ambient Temperature---TA(℃)
MTNK3N3 CYStek Product Specification
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