CYStech MTN7002ZHN3 Schematic [ru]
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode MOSFET
MTN7002ZHN3
Description
The MTN7002ZHN3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 1/7
Symbol Outline
MTN7002ZHN3
D
G
S
G：Gate
S：Source
D：Drain
SOT-23
D
S
G
MTN7002ZHN3 CYStek Product Specification
Spec. No. : C320N3
CYStech Electronics Corp.
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage
Drain Current
Drain Reverse Current
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
Continuous ID
Pulsed I
Continuous IDR
Pulsed IDRP
VGSS
DP
P
D
TCH
Tstg
±20 V
300 mA
800 *1 mA
300 mA
800 *1 mA
350 *2 mW
1550 *3 V
+150
-55~+150
°C
°C
Thermal Characteristics
Parameter Symbol Value Unit
Thermal Resistance, Junction to Ambient RθJA 357 *2
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
°C/W
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BV
V
60 - - V VGS=0, ID=10μA
DSS*
1 1.2 2.5 V VDS=VGS, ID=250μA
GS(th)
I
- - ±10 μA VGS=±20V, VDS=0
GSS
I
- - 1 μA VDS=60V, VGS=0
DSS
- 1.5 2.5 ID=100mA, VGS=10V
R
DS(ON)*
- 1.9 3 ID=100mA, VGS=4.5V
- 3.3 6
Ω
ID=10mA, VGS=2.5V
GFS 100 240 - mS VDS=10V, ID=100mA
C
- 30.6 -
iss
C
- 5.5 -
oss
C
- 4 -
rss
pF VDS=10V, VGS=0, f=1MHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking
MTN7002ZHN3
MTN7002ZHN3 CYStek Product Specification
SOT-23
(Pb-free)
3000 pcs / Tape & Reel 702
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2011.08.03
Page No. : 3/7
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
Drain Current - ID(A)
0.4
0.2
0.0
024681012
Drain-Source Voltage -VDS(V)
10V
3.5V
2.5V
VGS=2V
3V
6V
4.5V
4V
1.4
1.2
1
0.8
0.6
0.4
Drain Current -ID(A)
0.2
0
024681012
Typical Transfer Characteristics
VDS= 10V
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State resistance vs Drain Current
10
1.2
Reverse Drain Current vs Source-Drain Voltage
1
Tj=25°C
VGS= 2. 5V
VGS= 4. 5V
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
VGS=10V
1
0.001 0.01 0.1 1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Volta ge
7
6
5
4
3
2
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
1
ID=100mA
0.8
Tj=125°C
0.6
0.4
Source-Drain Voltage-VSD(V)
0.2
0 0.2 0.4 0.6 0.8 1
Drain-Source On-State Resistance vs Junction Tempearture
7
6
5
4
3
2
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
1
Reverse Drain Current -IDR(A)
VGS=10V, ID=100mA
0
024681
Gate-Source Voltage-VGS(V)
0
0
-60 -20 20 60 100 140 180
Junction Temperature-Tj(°C)
MTN7002ZHN3 CYStek Product Specification
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