CYStech MTN2306AN3 Schematic [ru]
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 1/ 8
MTN2306AN3
BVDSS 30V
ID 5.5A
Features
Low on-resistance
•
Low gate charge
•
Excellent thermal and electrical capabilities
•
Pb-free package
•
Equivalent Circuit Outline
MTN2306AN3
RDSON(TYP)
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.6A
SOT-23
D
25mΩ
27mΩ
30mΩ
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2) IDM 30 A
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3) Rth,ja 90
Operating Junction and Storage Temperature Tj, Tstg -55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
Symbol
ID 5.5 A
ID 4.4 A
P
D
Limits Unit
1.38 W
0.01
W/°C
°C/W
°C
MTN2306AN3 CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
BV
V
*R
Dynamic
*t
*t
Source-Drain Diode
30 - - V VGS=0, ID=250μA
DSS
/ΔTj - 0.1 -
DSS
0.5 0.8 1.2 V VDS=VGS, ID=250μA
GS(th)
V/°C Reference to 25°C, ID=1mA
GFS - 11 - S VDS=5V, ID=5A
I
- -
GSS
I
DSS
- - 1 μA VDS=25V, VGS=0
- - 25 μA VDS=20V, VGS=0, Tj=70°C
100
nA
VGS=±12V, VDS=0
±
- 25 30 VGS=10V, ID=5A
DS(ON)
- 27 35 VGS=4.5V, ID=5A
- 30 50
mΩ
VGS=2.5V, ID=2.6A
Ciss - 1021 1050
Coss - 44 -
pF VDS=25V, VGS=0, f=1MHz
Crss - 41 -
- 6 -
d(ON)
*tr - 20 -
- 20 -
d(OFF)
ns
VDS=15V, ID=5A, VGS=10V,
RG=3.3Ω, RD=3Ω
*tf - 3 -
*Qg - 9.7 -
*Qgs - 2.7 -
nC VDS=15V, ID=5A, VGS=4.5V
*Qgd - 4.1 -
*VSD - - 1.2 V VGS=0V, IS=1.2A
*trr - 14 - ns
*Qrr - 7 - nC
=5A, VGS=0V, dI/dt=100A/μs
I
S
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 2/ 8
Ordering Information
Device Package Shipping Marking
MTN2306AN3
SOT-23
(Pb-free)
3000 pcs / Tape & Reel 2306A
MTN2306AN3 CYStek Product Specification
CYStech Electronics Corp.
V=2V
Typical Characteristics
Typical Output Characteristics
30
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 3/ 8
Brekdown Voltage vs Ambient Temperature
46
3V,4V,5V,6V,7V,8V,9V,10V
20
, Drain Current(A)
10
D
I
0
012345678910
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=1.8V
VGS=2V
VGS=2.5V
100
Resistance(mΩ)
, Static Drain-Source On-State
DS(on)
R
VGS=4.5V
VGS=10V
10
0.01 0.1 1 10 100
, Drain Current(A)
I
D
44
42
40
(V)
DSS
38
BV
36
34
Drain-Source Breakdown Voltage
32
30
-75 -50 -25 0 25 50 75 100 125 150 175
ID=250μA,
=0V
V
GS
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
, Source-Drain Voltage(V)
SD
0.4
V
0.2
04812162
, Reverse Drain Current(A)
I
DR
0
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=5A
140
120
100
80
, Static Drain-Source On-
60
State Resistance(mΩ)
DS(on)
40
R
20
, Static Drain-Source On-State
DS(on)
R
0
024681
V
, Gate-Source Voltage(V)
GS
0
Drain-Source On-State Resistance vs Junction Tempearture
60
55
VGS=4.5V, ID=5A
50
45
VGS=2.5V, ID=2.6A
40
35
30
Resistance(mΩ)
25
20
VGS=10V, ID=5A
15
10
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
MTN2306AN3 CYStek Product Specification
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