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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C306A3
Issued Date : 2003.07.14
Revised Date : 2005.01.03
Page No. : 1 / 5
BTA733A3
Description
• The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
• High H
• Complementary to BTC945A3
• Pb-free package
and excellent linearity
FE
.
Symbol Outline
BTA733A3
B:Base
TO-92
C:Collector
E:Emitte
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Base Current IB -20 mA
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
°C/W
°C
°C
BTA733A3 CYStek Product Specification
Spec. No. : C306A3
CYStech Electronics Corp.
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
(Ta=25°C)
Issued Date : 2003.07.14
Revised Date : 2005.01.03
Page No. : 2 / 5
BV
*V
Classification Of h
-50 - - V IC=-1mA
CEO
I
- - -0.1 µA VCB=-60V
CBO
I
- - -0.1 µA VEB=-5V
EBO
- - -0.3 V IC=-100mA, IB=-10mA
CE(sat)
V
-0.58 - -0.68 V VCE=-6V, IC=-1mA
BE
h
135 - 600 - VCE=-6V, IC=-1mA
FE
fT 100 - - MHz VCE=-6V, IC=-10mA
Cob - - 6 pF VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
FE
Rank Q P K
Range 135~270 200~400 300~600
BTA733A3 CYStek Product Specification