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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952J3
Features
• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103J3
Symbol Outline
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2004.09.17
Page No. : 1/4
BTA1952J3
TO-252
B:Base
C:Collector
B C E
E:Emitter
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current
Power Dissipation
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Note : *1. Single Pulse Pw=10ms
(Ta=25°C)
CBO
-100 V
CEO
-80 V
EBO
-5 V
C(DC)
I
-5
C(Pulse)
I
Pd(TA=25℃)
Pd(T
-10 *1
C
=25℃)
1
10
A
W
°
C
°
C
BTA1952J3 CYStek Product Specification
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CYStech Electronics Corp.
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
(Ta=25°C)
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2004.09.17
Page No. : 2/4
BV
BV
BV
*V
*V
*h
*h
-100 - - V IC=-50µA, IE=0
CBO
-80 - - V IC=-1mA, IB=0
CEO
-5 - - V IE=-50µA, IC=0
EBO
I
- - -10 µA VCB=-100V, IE=0
CBO
I
- - -10 µA VEB=-5V, IC=0
EBO
- -0.3 -1.0 V IC=-2A, IB=-0.2A
CE(sat)
- - -1.5 V IC=-2A, IB=-0.2A
BE(sat)
1 100 - - - VCE=-3V, IC=-0.5A
FE
2 120 - 390 - VCE=-2V, IC=-1A
FE
fT - 120 - MHz VCE=-5V, IC=-500mA, f=30MHz
Classification of h
Rank Q R
Range 120~270 180~390
FE
2
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTA1952J3 CYStek Product Specification