CYStech BTA1952E3 User Manual
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952E3
Features
• Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A
• Excellent DC current gain characteristics
• Wide SOA
Symbol Outline
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
BTA1952E3
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current
Base Current IB -1 A
Power Dissipation
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Note : *1. Single Pulse Pw=10ms
(Ta=25°C)
CBO
-100 V
CEO
-80 V
EBO
-5 V
IC(DC) -5
IC(Pulse) -8 *1
Pd(TA=25℃)
Pd(TC=25℃)
TO-220AB
B C E
2
40
A
W
°C
°C
BTA1952E3 CYStek Product Specification
CYStech Electronics Corp.
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
(Ta=25°C)
Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 2/4
BV
*V
*V
*V
*V
*h
*h
-80 - - V IC=-10mA, IB=0
CEO
I
- - -10 µA VCB=-100V, IE=0
CBO
I
- - -10 µA VEB=-5V, IC=0
EBO
- - -0.6 V IC=-1A, IB=-10mA
CE(sat)
- - -0.8 V IC=-3A, IB=-150mA
CE(sat)
- - -1.3 V IC=-4A, IB=-200mA
CE(sat)
- - -1.5 V IC=-3A, IB=-150mA
BE(sat)
1 100 - - - VCE=-3V, IC=-500mA
FE
2 120 - 390 - VCE=-2V, IC=-1A
FE
fT 10 - - MHz VCE=-4V, IC=-1A, f=1MHz
Classification of h
Rank Q R
Range 120~270 180~390
FE
2
Ordering Information
Device Package Shipping
BTA1952E3 TO-220AB Tube
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTA1952E3 CYStek Product Specification
Loading...