CYStech BTA1759N3 User Manual

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CYStech Electronics Corp.

High Voltage PNP Epitaxial Planar Transistor

Spec. No. : C309N3
Issued Date : 2003.05.09

Revised Date : 2004.04.02
Page No. : 1/4

BTA1759N3

Description

• High breakdown voltage. (BV

• Low saturation voltage, typical V

• Wide SOA (safe operation area).

• Complementary to BTC4505N3.

=-400V)

CEO

CE(sat)

=-0.2V at Ic/IB =-20mA/-2mA.

Symbol Outline

BTA1759N3

B：Base
C：Collector
E：Emitter

SOT-23

Absolute Maximum Ratings

Parameter Symbol Limits Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current IC -300 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150

BTA1759N3 CYStek Product Specification

(Ta=25°C)

CBO

-400 V

CEO

-400 V

EBO

-7 V

°C
°C

Spec. No. : C309N3

CYStech Electronics Corp.

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

(Ta=25°C)

Issued Date : 2003.05.09

Revised Date : 2004.04.02
Page No. : 2/4

BV
BV
BV

*V
*V

-400 - - V IC=-50µA

CBO

-400 - - V IC=-1mA

CEO

-7 - - V IE=-50µA

EBO

I

- - -10 µA VCB=-400V

CBO

I

- - -20 nA

CER

I

- - -10 µA VEB=-6V

EBO

- -0.08 -0.5 V IC=-20mA, IB=-2mA

CE(sat)

- - -1.2 V IC=-20mA, IB=-2mA

BE(sat)

*hFE 100 - 270 - VCE=-10V, IC=-10mA

fT - 12 - MHz VCE=-10V, IC=-10mA, f=5MHz

Cob - 13 - pF VCB=-10V, IE=0A, f=1MHz

VCE=-300V, REB=4kΩ

*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

BTA1759N3 CYStek Product Specification