CYStech BTA1759M3 User Manual
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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309M3
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTA1759M3
Description
• High breakdown voltage. (BV
• Low saturation voltage, typically V
• Wide SOA (safe operation area).
• Complementary to BTC4505M3.
=-400V)
CEO
CE(sat)
= -0.07V at Ic/IB =-10mA/-1mA.
Symbol Outline
BTA1759M3
B：Base
C：Collector
E：Emitter
SOT-89
B C E
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current IC -300 mA
Power Dissipation Pd
Thermal Resistance, Junction to Ambient R
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Note : 1.When mounted on FR-4 PCB with area measuring 10×10×1 mm
(Ta=25°C)
CBO
-400 V
CEO
-400 V
EBO
-6 V
0.6 W
208
(Note 1)
(Note 2)
(Note 1)
(Note 2)
W
W
°C/W
°C/W
°C/W
°C
°C
θJA
1
2
125
62.5
2.When mounted on ceramic with area measuring 40×40×1 mm
BTA1759M3 CYStek Product Specification
Spec. No. : C309M3
Issued Date : 2003.06.30
Revised Date :
Page No. : 2/4
Characteristics
CYStech Electronics Corp.
(Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BV
BV
BV
V
*V
*V
*V
*h
*h
*h
CE(sat)
-400 - - V IC=-50µA
CBO
-400 - - V IC=-1mA
CEO
-6 - - V IE=-50µA
EBO
I
- - -10 µA VCB=-400V
CBO
I
- - -10 µA VEB=-6V
EBO
I
- - -10 µA VCB=-400V
CES
1 - - -0.2 V IC=-1mA, IB=-0.1mA
CE(sat)
CE(sat)
h
2 - - -0.3 V IC=-10mA, IB=-1mA
3 - - -0.6 V IC=-50mA, IB=-5mA
- - -0.9 V IC=-20mA, IB=-2mA
BE(sat)
1 50 - - - VCE=-10V, IC=-1mA
FE
2 56 - 270 - VCE=-10V, IC=-10mA
FE
3 50 - - - VCE=-10V, IC=-50mA
FE
4 40 - - - VCE=-10V, IC=-100mA
FE
Cob - - 6 pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank K P Q
Range 56~120 82~180 120~270
BTA1759M3 CYStek Product Specification
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