CYStech BTA1721N3 User Manual

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CYStech Electronics Corp.

General Purpose PNP Epitaxial Planar Transistor

Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2005.06.01
Page No. : 1/5

BTA1721N3

Description

• High breakdown voltage.

• Low collector output capacitance.

• Ideal for chroma circuit.

• Pb-free package

Symbol Outline

BTA1721N3

B：Base
C：Collector

SOT-23

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150

°C
°C

BTA1721N3 CYStek Product Specification

Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2005.06.01
Page No. : 2/5

Characteristics

CYStech Electronics Corp.

(Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BV
BV
BV

*V
*V

-300 - - V IC=-100µA

CBO

-300 - - V IC=-1mA

CEO

-5 - - V IE=-100µA

EBO

I

- - -0.25 µA VCB=-200V

CBO

I

- - -0.1 µA VEB=-3V

EBO

- - -0.5 V IC=-20mA, IB=-2mA

CE(sat)

- - -0.9 V IC=-20mA, IB=-2mA

BE(sat)

*hFE 25 - - - VCE=-10V, IC=-1mA
*hFE 52 - 270 - VCE=-10V, IC=-10mA
*hFE 25 - - - VCE=-10V, IC=-30mA

fT 50 - - MHz VCE=-20V, IC=-10mA, f=100MHz

Cob - - 6 pF VCB=-20V, f=1MHz

*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

Classification Of hFE

Rank K P Q

Range 52~120 82~180 120~270

Ordering Information

Device Package Shipping Marking

BTA1721N3

SOT-23

(Pb-free)

Characteristic Curves

Current Gain vs Collector Current

1000

HFE

100

Current Gain---

10

0.1 1 10 100

Collector Current---IC(mA)

3000 pcs / Tape & Reel 2D

HFE@VCE=10V

10000

1000

100

Saturation Voltage---(mV)

10

Saturation Voltage vs Collector Current

VCE(SAT)@IC=10IB

0.1 1 10 100

Collector Current---IC(mA)

BTA1721N3 CYStek Product Specification