CYStech BTA1664M3 User Manual
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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1664M3
Features
• Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA
• Pb-free package
Symbol Outline
Spec. No. : C315M3
Issued Date : 2005.01.25
Revised Date : 2005.11.10
Page No. : 1/4
BTA1664M3
SOT-89
B：Base
C：Collector
B C E
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current(DC) IC -0.8 A
Collector Current(Pulse) ICP -2 *1 A
0.6
Power Dissipation Pd
1 *2
2 *3
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Note : *1 Single pulse, Pw=10ms
*2 When mounted on FR-4 PCB with area measuring 10×10×1 mm
*3
When mounted on ceramic with area measuring 40×40×1 mm
BTA1664M3 CYStek Product Specification
W
°C
°C
Spec. No. : C315M3
CYStech Electronics Corp.
Issued Date : 2005.01.25
Revised Date : 2005.11.10
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BV
BV
BV
*V
*V
-40 - - V IC=-50µA, IE=0
CBO
-25 - - V IC=-1mA, IB=0
CEO
-5 - - V IE=-50µA, IC=0
EBO
I
- - -100 nA VCB=-40V, IE=0
CBO
I
- - -100 nA VEB=-5V, IC=0
EBO
- -0.24 -0.4 V IC=-500mA, IB=-20mA
CE(sat)
-0.5 - -0.8 V VCE=-1V, IC=-10mA
BE(on)
*hFE 1 82 - 390 - VCE=-1V, IC=-100mA
*h
2 40 - - - VCE=-1V, IC=-700mA
FE
fT - 120 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - 19 - pF VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank P Q R
Range 82~180 120~270 180~390
Ordering Information
Device Package Shipping Marking
BTA1664M3
SOT-89
(Pb-free)
1000 pcs / Tape & Reel BA
BTA1664M3 CYStek Product Specification
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