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CYStech Electronics Corp.
Low V
CE(SAT)
PNP Epitaxial Planar Transistor
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/4
BTA1300A3
Description
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier
applications.
Features
• High DC current gain and excellent hFE linearity.
HFE(1)=140—600(VCE=-1V,IC=-0.5A)
HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A)
• Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).
Symbol
BTA1300A3
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCES -20 V
Collector-Emitter Voltage VCEO -10 V
Emitter-Base Voltage VEBO -6 V
Collector Current(DC) IC -2
Collector Current(Pulsed)(
Power Dissipation Pd 750 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.
BTA1300A3 CYStek Product Specification
Note 1)
(Ta=25°C)
ICP -5
A
°C
°C

Spec. No. : C816A3
CYStech Electronics Corp.
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -20 - - V IC=-50uA
BVCEO -10 - - V IC=-10mA
BVEBO -6 - - V IE=-1mA
ICBO - - -0.1 uA VCB=-20V
IEBO - - -0.1 uA VEB=-6V
*VCE(sat) - - -0.5 V IC=-2A, IB=-50mA
*VBE(on) - - -1.5 V VCE=-1V, IC=-2A
*hFE 1 140 - 600 - VCE=-1V, IC=-500mA
*hFE 2 60 120 - VCE=-1V, IC=-4A
fT - 140 - MHz VCE=-1V, IE=500mA, f=100MHz
Cob - 50 - pF VCB=-10V, IE=0A,f=1MHz
(Ta=25°C)
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Issued Date : 2003.04.15
Revised Date :
Page No. : 2/4
Classification Of hFE
Rank Y GR BL
Range 140~280 200~400 300~600
BTA1300A3 CYStek Product Specification