CYStech BSS123N3 Schematic [ru]
CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 1/7
BVDSS 100V
BSS123N3
Description
The BSS123N3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Pb-free package
Symbol Outline
BSS123N3 SOT-23
ID 1.7A
RDSON(max)
450mΩ
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings
Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Continuous ID
Pulsed I
(Ta=25°C)
VGSS
DP
P
D
TCH
Tstg
±20 V
1.7 A
6.8 *1 A
1.38 *2 W
+150
-55~+150
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
BSS123N3 CYStek Product Specification
Spec. No. : C580N3
CYStech Electronics Corp.
Issued Date : 2011.09.16
Revised Date :
Page No. : 2/7
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance, Junction-to-Ambient Rth,ja 90
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 350°C/W when mounted on minimum copper pad.
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
V
R
Dynamic
td
td
Source-Drain Diode
*VSD - - 1.2 V VGS=0V, ISD=1A
100 - - V VGS=0, ID=10μA
DSS*
1 - 2.5 V VDS=VGS, ID=250μA
GS(th)
I
- - ±100 nA VGS=±20V, VDS=0
GSS
I
- - 1 μA VDS=100V, VGS=0
DSS
- 290 400 ID=700mA, VGS=10V
DS(ON)*
- 310 450 ID=400mA, VGS=4V
- 260 400 ID=170mA, VGS=10V
- 280 400
mΩ
ID=170mA, VGS=4V
GFS 0.08 1 - S VDS=10V, ID=170mA
C
- 512 -
iss
C
- 15 -
oss
C
- 11 -
rss
- 3.1 -
(ON)
tr - 1.2 -
- 9.7 -
(OFF)
pF VDS=25V, VGS=0, f=1MHz
ns
VDD=30V, ID=1.7A, VGS=10V, R
tf - 1.4 -
Qg - 3.6 -
Qgs - 1.8 -
nC VDD=30V, ID=1.7A, VGS=10V
Qgd - 0.6 -
*IS - - 1.7
*ISM - - 6.8
A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
GEN
=6Ω
Ordering Information
Device Package Shipping Marking
BSS123N3
SOT-23
(Pb-free)
3000 pcs / Tape & Reel SA
BSS123N3 CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 3/7
Typical Output Characteristics
8
10V
7
8V
7V
6
6V
4.5V
5
4V
4
3.5V
3
Drain Current - ID(A)
2
1
0
0123456
Drain-Source Voltage -VDS(V)
VGS= 3V
Breakdown Voltage -BVDSS(V)
Breakdown Voltage vs Junction Temperature
140
ID=250μA
130
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature-Tj(°C)
Static Drain-Source On-State
10000
1000
Resistance-RDS(on)(mΩ)
Static Drain-Source On-State resistance vs Drain Current
VGS= 3V
VGS= 2. 5V
VGS= 4. 5V
VGS= 10V
1.2
0.8
0.6
0.4
Source-Drain Voltage-VSD(V)
Reverse Drain Current vs Source-Drain Voltage
1
Tj=25°C
Tj=150°C
100
0.001 0.01 0.1 1
Drain Current-ID(A)
0.2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Reverse Drain Current -IDR(A)
Static Drain-Source On-State Resistance vs Gate-Source
Volta ge
1000
900
800
700
600
500
400
300
Resistance-RDS(ON)(mΩ)
Static Drain-Source On-State
200
100
0
024681
Gate-Source Voltage-VGS(V)
ID=700mA
ID=400mA
Static Drain-Source On-State
0
Drain-Source On-State Resistance vs Junction Tempearture
700
650
600
550
500
450
400
350
300
250
Resistance-RDS(ON)(mΩ)
200
150
100
VGS=10V, ID=700mA
VGS= 4V, ID=400mA
VGS=10V, ID=170mA
-60 -20 20 60 100 140 180
Junction Temperature-Tj(°C)
BSS123N3 CYStek Product Specification
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