CYStech BCR1002N3 Schematic [ru]
CYStech Electronics Corp.
PNPN Epitaxial Planar SCR
Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 1/6
BCR1002N3
Descriptions
The BCR1002N3 is designed for high volume consumer applications such as temperature, light, and speed
control; process and remote control, and warning systems where reliability of operation is important.
Features
• Practical level triggering and holding characteristics
• On state current rating of 0.2A
• Sensitive gate allows triggering by microcontrollers and other logic circuits
• Pb-free package
RMS
Symbol Outline
BCR1002N3
G：Gate
A：Anode
K：Cathode
SOT-23
A
G
K
BCR1002N3 CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TJ=25°C)
Parameter Symbol Limits Unit
Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 2/6
Peak Repetitive Off-State Voltage @TJ=-40℃ to 125℃,
V
GK=1KΩ
R
On-State Current @TC=80℃
Average On-State Current @ TC=80℃
Reverse Peak Gate Voltage @TA=25℃, Pulse Width≤1μs
Forward Peak Gate Current @TA=25℃, Pulse Width≤1μs
Forward Average Gate Power @ TA=25℃, t=8.3ms
Thermal Resistance, Junction to Ambient RθJA 556
Thermal Resistance, Junction to Case RθJC 208
Junction Temperature Tj -40~+125
Storage Temperature Tstg -40~+150
Note : Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional
operation above the recommended operating conditions is not implied. Extended exposure to stresses above the
recommended operating conditions may affect device reliability.
V
DRM can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however , positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltage shall not be tested with
a constant current source such that the voltage ratings of the device are exceeded.
DRM 140 V
IT(RMS) 350 mA
IT(AV) 220 mA
VGRM 8 V
IGM 500 mA
G(AV) 100 mW
P
°C/W
°C/W
°C
°C
Characteristics
(Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
I
- - 100 μA
DRM
I
- - 10 μA
DRM
VD=140V, RGK=1KΩ, TC=125℃
VD=140V, RGK=1KΩ, TC=25℃
*VTM - - 1.5 V ITM=200mA
IGT - - 100
IH - - 5
μA
mA
VD=7V, RL=100Ω
VD=7V, RGK=1KΩ
IL - - 6 mA VD=7V, IG=200μA
VGT - - 0.8 V
dV/dt 25 - - V/μs
VD=7V, RL=100Ω
VD=35V, RGK=1KΩ
dI/dt 30 - - A/μs IG=10mA, dIG/dt=100mA/μs, PW=10μs
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device Package Shipping Marking
BCR1002N3
SOT-23
(Pb-free)
3000 pcs / Tape & Box CR
BCR1002N3 CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 3/6
Gate Trigger Current vs Junction Temperature
70
60
A)
μ
(
GT
50
40
30
20
Gate Trigger Current---I
10
0
-50 -25 0 25 50 75 100 125
JunctionTemperature---T
(℃)
J
Holding Current vs Junction Temperature
10
(mA)
H
Gate Trigger Voltage vs Junction Temperature
1
0.9
(V)
0.8
GT
0.7
0.6
0.5
0.4
0.3
0.2
Gate Trigger Voltage---V
0.1
0
-50-250 255075100125
Junction Temperature---T
(°C)
J
Latching Current vs Junction Temperature
1000
A)
μ
(
L
1
Holding Current---I
0.1
-50 -25 0 25 50 75 100 125
Junction Temperature---T
(°C)
J
On-state Characteristics
1000
(mA)
T
100
Instantaneous On-state Current---I
TJ=125°C
TJ=25°C
TJ=-40°C
100
Latching Current---I
10
-50 -25 0 25 50 75 100 125
Junction Temperature---T
(°C)
J
10
00.40.81.21.62
Instantaneous On-state Voltage---V
T
(V)
BCR1002N3 CYStek Product Specification
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