CYStech BCR1002A3 Schematic [ru]

CYStech Electronics Corp.

PNPN Epitaxial Planar SCR

Spec. No. : C700A3
Issued Date : 2008.02.22
Revised Date :2012.10.16
Page No. : 1/6

BCR1002A3

Descriptions

The BCR1002A3 is designed for high volume consumer applications such as temperature, light, and speed
control; process and remote control, and warning systems where reliability of operation is important.

Features

• Practical level triggering and holding characteristics

• On state current rating of 0.35A

• Sensitive gate allows triggering by microcontrollers and other logic circuits

• Pb-free package

RMS

Symbol Outline

BCR1002A3

G：Gate
A：Anode
K：Cathode

Ordering Information

Device Package Shipping

BCR1002A3-0-TB-G

BCR1002A3-0-BK-G

(Pb-free lead plating and halogen-free package)

(Pb-free lead plating and halogen-free package)

TO-92

TO-92

TO-92

K G A

2000 pcs / tape & box

1000 pcs / bag; 10 bags/box,

10 boxes/carton

BCR1002A3 CYStek Product Specification

CYStech Electronics Corp.

Absolute Maximum Ratings (TJ=25°C)

Parameter Symbol Limits Unit

Spec. No. : C700A3
Issued Date : 2008.02.22
Revised Date :2012.10.16
Page No. : 2/6

Peak Repetitive Off-State Voltage @TJ=-40℃ to 125℃, RGK=1KΩ
On-State Current @TC=80℃
Average On-State Current @ TC=80℃

VDRM 140 V

IT(RMS) 350 mA

IT(AV) 220 mA
Peak Non-repetitive Surge Current, half cycle, sine wave, 60Hz ITSM 4 A
Circuit Fusing Consideration (t=8.3ms) I²t 0.2 A²s
Reverse Peak Gate Voltage @TA=25℃, Pulse Width≤1μs
Forward Peak Gate Current @TA=25℃, Pulse Width≤1μs
Forward Average Gate Power @ TA=25℃, t=8.3ms
Thermal Resistance, Junction to Ambient RθJA 200
Thermal Resistance, Junction to Case RθJC 75
Junction Temperature Tj -40~+125
Storage Temperature Tstg -40~+150
Lead Solder Temperature(<1/16” from case, 10secs max) TL 260

Note : Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional

operation above the recommended operating conditions is not implied. Extended exposure to stresses above the
recommended operating conditions may affect device reliability.

V

DRM can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however , positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltage shall not be tested with
a constant current source such that the voltage ratings of the device are exceeded.

VGRM 8 V

IGM 500 mA

PG(AV) 100 mW

°C/W
°C/W

°C
°C
°C

Characteristics

(Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

I

- - 100 μA

DRM

I

- - 10 μA

DRM

VD=140V, RGK=1KΩ, TC=125℃
VD=140V, RGK=1KΩ, TC=25℃

*VTM - - 1.5 V ITM=200mA

IGT - - 100

IH - - 5

μA

mA

VD=7V, RL=100Ω
VD=7V, RGK=1KΩ

IL - - 6 mA VD=7V, IG=200μA

VGT - - 0.8 V

dV/dt 25 - - V/μs

VD=7V, RL=100Ω
VD=35V, RGK=1KΩ

dI/dt 30 - - A/μs IG=10mA, dIG/dt=100mA/μs, PW=10μs

*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

BCR1002A3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics

Spec. No. : C700A3
Issued Date : 2008.02.22
Revised Date :2012.10.16
Page No. : 3/6

Gate Trigger Current vs Junction Temperature

70

60

A)

μ

(

GT

50

40

30

20

Gate Trigger Current---I

10

0

-50 -25 0 25 50 75 100 125

JunctionTemperature---T

(℃)

J

Holding Current vs Junction Temperature

10

(mA)

H

Gate Trigger Voltage vs Junction Temperature

1

0.9

(V)

0.8

GT

0.7

0.6

0.5

0.4

0.3

0.2

Gate Trigger Voltage---V

0.1

0

-50-250 255075100125
Junction Temperature---T

(°C)

J

Latching Current vs Junction Temperature

1000

A)

μ

(

L

1

Holding Current---I

0.1

-50 -25 0 25 50 75 100 125

Junction Temperature---T

(°C)

J

On-state Characteristics

1000

(mA)

T

100

Instantaneous On-state Current---I

TJ=125°C

TJ=25°C

TJ=-40°C

100

Latching Current---I

10

-50 -25 0 25 50 75 100 125

Junction Temperature---T

(°C)

J

10

00.40.81.21.62

Instantaneous On-state Voltage---V

T

(V)

BCR1002A3 CYStek Product Specification