Cypress Semiconductor PALCE22V10-25PC, PALCE22V10-25PI, PALCE22V10-5PC, PALCE22V10-7JC, PALCE22V10-7PC Datasheet

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22V10
PALCE22V10
Flash Erasable,
Reprogrammable CMOS PAL® Device
Features
—90 mA max. commercial (10 ns) —130 mA max. commercial (5 ns)
CMOS Flash EPROM technology f or electrical erasabil-
ity and reprogrammability
Variable product terms
2 x (8 through 16) product terms
User-programmable macrocell
Output polarity controlIndividually selectable for registered or combinato-
rial operation
Up to 22 input terms and 10 outputs
DIP, LCC, and PLCC available
5 ns commercial version
4 ns t
CO
3 ns t
S
Logic Block Diagram (PDIP/CDIP)
V
SS
IIIIIIIIIICP/I
11 10 9 8 7 6 5 4 3 2 112
5 ns t
PD
181-MHz state machine
10 ns military and industrial versions
7 ns t
CO
6 ns t
S
10 ns t
PD
110-M Hz state machine
15-ns commercial, industrial, and military versions25-ns commercial, industrial, and military versions
High reliability
Proven Flash EPROM technology100% programming and functional testing
Functional Description
The Cypress PALCE22V10 is a CMOS Flash Erasable sec­ond-generation programmable array logic device. It is imple­mented with the familiar sum-of-products (AND-OR) logic structure and the programmable macrocell.
PROGRAMMABLE
AND ARRAY
I/O
25 24 23 22 21 20 19
I/O
(132X 44)
I/O
5
1
I/O
2
I/O
3
I/O
4
N/C I/O
5
I/O
6
I/O
7
8
CE22V10–2
I/O
4
NC
5
I
6
I
7
I
8 9
I
10
I
11
I
I/O
3
PLCC
Top View
CC
NC
I9I
CP/IVI/O
4 3 2 2827 261
121314 1516 1718
I
I
I
SS
NC
V
I/O
I/O
2
0
1
I/O
25 24 23 22 21 20 19
8
I/O
I/O
2
I/O
3
I/O
4
N/C I/O
5
I/O
6
I/O
7
CE22V10–3
I/O
1
I/O
0
8
Reset
Macrocell
13 14 15 16 17 18 19 20 21 22 23 24
I I/O
9
Pin Configuration
10 12 14 16 16 14 12 10 8
Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell
I/O
8
NC
I/O
I I I
I I I
7
LCC
Top View
I9I
CP/IVI/O
4 3 2 282726 5 6 7 8 9 10 11
12131415161718
I
I
SS
V
I/O
1
NC
NC
6
0
CC
I
I/O
PAL is a registered trademark of Advanced Micro Devices.
Preset
V
CE22V10–1
CC
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600 Document #: 38-03027 Rev. ** Revised September 1996
PALCE22V10
Selection Guide
tPD ns tS ns tCO ns ICC mA
Generic Part Number
PALCE22V10-5 5 3 4 130 PALCE22V10-7 7.5 5 5 130 PALCE22V10-10 10 10 6 6 7 7 90 150 PALCE22V10-15 15 15 10 10 8 8 90 120 PALCE22V10-25 25 25 15 15 15 15 90 120
Com’l Mil/Ind Com’l Mil/Ind Com’l Mil/Ind Com’l Mil/Ind
Functional Description (continued)
The P ALCE22V10 is ex ecuted in a 24-pin 300 -mil molded DIP, a 300-mil cerDIP, a 28-lead square ceramic leadl ess ch ip car­rier, a 28-le ad sq uare pl astic lead ed chi p carri er, and provides up to 22 inputs and 10 outputs . The P ALCE22V10 can be elec­trically erased and rep rogrammed. The pro grammable m acro­cell provides the capab ility of defini ng the architect ure of each output individually. Each of the 10 potential outputs may be specified as “registered or combinatorial. Polarity of each output may also be individually selected, allowing complete flexibility of outpu t config uration . Further co nfi gurabi lity is pro­vided through “array” confi gurable output enable for ea ch po­tential output. This feature allows the 10 outputs to be recon­figured as inputs on an i ndivi dual ba sis, o r al ternate ly use d as a combination I/O controlled by the programmable array.
PALCE22V10 features a variable product term architecture. There are 5 pairs of pr oduct term sums beg inning at 8 product terms per output and incrementing by 2 to 16 product terms per output. By providing this variable structure, the PALCE 22V10 is optimized t o th e confi guratio ns fou nd in a majori ty of applications without creating devices that burden the product term structures with unusabl e product term s and lower perfor­mance.
Additional features of the Cypress PALCE22V10 include a synchronous prese t and a n asy nchro nous r eset p roduct term. These product terms are common to all macrocells, eliminat­ing the need to dedicate standard product terms for initializa­tion functions. The device automatically resets upon pow­er-up.
The PALCE22V10, featuring programmable macrocells and variable product terms , pro vid es a de vic e wi th the flexibility to implement logic functions in the 500- to 800-gate-array com­plexity. Since each of the 10 output pins may be individually configured as inputs on a tem porary or permanent bas is, func-
tions requiring up to 21 inputs and only a single output and down to 12 inputs and 10 outputs are possible. The 10 poten­tial outputs are enabled using product terms. Any output pin may be permanently selected as an output or arbitrarily en­abled as an output and an input through the selective use of individual product terms associated with each o utp ut. Ea ch of these outputs is ac hieved through an individual pro grammable macrocell. These macrocells are programmable to provide a combinatorial or regis tered inverting or non-in verting output. In a registered mode of operat ion, the output of the regis ter is fed back into the array, providing current status information to th e array. This information is available for establishing the next result in applicati ons such as control state machines. In a com­binatorial configur ati on, the com bi na toria l output or, if th e ou t­put is disabled, the sign al present on the I/O pi n is made avail­able to the array. The flexibility provided by both programmable produc t term control of the outputs and variable product terms allows a significant gain in functional density through the use of programmable logic.
Along with this increase in functional density, the Cypress P ALCE22V10 provide s lower-power oper ation through t he use of CMOS technology, and increased testability with Flash re­programmability.
Configuration Table
Registered/Combinatorial
C
1
0 0 Registered/Active LOW 0 1 Registered/Active HIGH 1 0 Combinatorial/Active LOW 1 1 Combinatorial/Active HIGH
C
0
Configuration
Document #: 38-03027 Rev. ** Page 2 of 13
Macrocell
PALCE22V10
AR
OUTPUT
SELECT
QD
MUX
CP
SP
INPUT/
FEEDBACK
MUX
S
1
C
1
C
0
Maximum Ratings
(Above which the useful life may be impaired. For us er guide­lines, not tested.)
Storage Temperature .................................–65
Ambient Temperature with
Power Applied.............................................–55
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)...........................................–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State...............................................–0.5V to +7.0V
DC Input Voltage............................................–0.5V to +7.0V
Output Current into Outputs (LOW).............................16 mA
Note:
is the instant on case temperature.
1. T
A
°C to +150°C °C to +125°C
Q
MACROCELL
SS
10
CE22V10–4
DC Programming Voltage.............................................12.5V
Latch-Up Current.....................................................>200 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) .............................>2001V
Operating Range
Range
Commercial 0°C to +75°C 5V ±5% Industrial –40°C to +85°C 5V ±10%
[1]
Military
Ambient
Temperature
V
55°C to +125°C 5V ±10%
CC
Document #: 38-03027 Rev. ** Page 3 of 13
PALCE22V10
]
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
V
V V I
IX
I
OZ
I
SC
I
CC1
I
CC2
OH
OL
IH IL
[4]
[6]
Output HIGH Voltage VCC = Min.,
VIN = VIH or V
Output LOW Voltage VCC = Min.,
= VIH or V
V
IN
Input HIGH Level Guaranteed Inp ut Logical HIGH V oltage for All Inputs Input LOW Level Guaranteed Input Logical LOW Voltage for All Inputs Input Leakage Current VSS < VIN < VCC, VCC = Max. –10 10 µA Output Leakage Current VCC = Max., VSS < V Output Short Circuit Current VCC = Max., V Standby Power Supply
Current
VCC = Max.,
= GND,
V
IN
Outputs Open in Unprogrammed Device
Operating Power Supply Current
VCC = Max., VIL =
= 3V,
0V, V
IH
Output Open, De­vice Programmed as a 10-Bit Counter, f = 25 MHz
[2]
IOH = –3.2 mA Com’l 2.4 V
IL
IOH = –2 mA Mil/Ind IOL = 16 mA Com’l 0.5 V
IL
IOL = 12 mA Mil/Ind
OUT
OUT
= 0.5V
< V
[5,6]
[3] [3]
CC
2.0 V
0.5 0.8 V
40 40 µA30 130 mA
10, 15, 25 ns Com’l 90 mA 5, 7.5 ns 130 mA 15, 25 ns Mil/Ind 120 mA 10 ns 120 mA 10, 15, 25 ns Com’l 110 mA 5, 7.5 ns Com’l 140 mA 15, 25 ns Mil/Ind 130 mA 10 ns Mil/Ind 130 mA
Capacitance
[6]
Parameter Description Test Conditions Min. Max. Unit
C
IN
C
OUT
]
Endurance Characteristics
Input Capacitance VIN = 2.0V @ f = 1 MHz 10 pF Output Capacitance V
[6]
= 2.0V @ f = 1 MHz 10 pF
OUT
Parameter Description Test Conditions Min. Max. Unit
N Minimum Reprogramm ing Cycle s Normal Programming Conditions 100 Cycles
Notes:
2. See the last page of this specificat io n for Gro up A subgroup testing information.
3. These are absolute values with respect to device ground. All overshoots due to system or tester noise are included. (Min.) is equal to -3.0V for pulse durations less than 20 ns.
4. V
IL
5. Not more than one output shou ld be test ed at a time. Dura tion of the short circui t should not be more than one se cond. V
caused by tester ground degrad ation.
6. Tested initially and after any design or process changes that may affect these parameters.
= 0.5V has been chosen to a void test problems
OUT
Document #: 38-03027 Rev. ** Page 4 of 13
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