—90 mA max. commercial (10 ns)
—130 mA max. commercial (5 ns)
• CMOS Flash EPROM technology f or electrical erasabil-
ity and reprogrammability
• Variable product terms
—2 x (8 through 16) product terms
• User-programmable macrocell
—Output polarity control
—Individually selectable for registered or combinato-
rial operation
• Up to 22 input terms and 10 outputs
• DIP, LCC, and PLCC available
—5 ns commercial version
4 ns t
CO
3 ns t
S
Logic Block Diagram (PDIP/CDIP)
V
SS
IIIIIIIIIICP/I
111098765432112
5 ns t
PD
181-MHz state machine
—10 ns military and industrial versions
7 ns t
CO
6 ns t
S
10 ns t
PD
110-M Hz state machine
—15-ns commercial, industrial, and military versions
—25-ns commercial, industrial, and military versions
• High reliability
—Proven Flash EPROM technology
—100% programming and functional testing
Functional Description
The Cypress PALCE22V10 is a CMOS Flash Erasable second-generation programmable array logic device. It is implemented with the familiar sum-of-products (AND-OR) logic
structure and the programmable macrocell.
The P ALCE22V10 is ex ecuted in a 24-pin 300 -mil molded DIP,
a 300-mil cerDIP, a 28-lead square ceramic leadl ess ch ip carrier, a 28-le ad sq uare pl astic lead ed chi p carri er, and provides
up to 22 inputs and 10 outputs . The P ALCE22V10 can be electrically erased and rep rogrammed. The pro grammable m acrocell provides the capab ility of defini ng the architect ure of each
output individually. Each of the 10 potential outputs may be
specified as “registered” or “combinatorial.” Polarity of each
output may also be individually selected, allowing complete
flexibility of outpu t config uration . Further co nfi gurabi lity is provided through “array” confi gurable “output enable” for ea ch potential output. This feature allows the 10 outputs to be reconfigured as inputs on an i ndivi dual ba sis, o r al ternate ly use d as
a combination I/O controlled by the programmable array.
PALCE22V10 features a variable product term architecture.
There are 5 pairs of pr oduct term sums beg inning at 8 product
terms per output and incrementing by 2 to 16 product terms
per output. By providing this variable structure, the PALCE
22V10 is optimized t o th e confi guratio ns fou nd in a majori ty of
applications without creating devices that burden the product
term structures with unusabl e product term s and lower performance.
Additional features of the Cypress PALCE22V10 include a
synchronous prese t and a n asy nchro nous r eset p roduct term.
These product terms are common to all macrocells, eliminating the need to dedicate standard product terms for initialization functions. The device automatically resets upon power-up.
The PALCE22V10, featuring programmable macrocells and
variable product terms , pro vid es a de vic e wi th the flexibility to
implement logic functions in the 500- to 800-gate-array complexity. Since each of the 10 output pins may be individually
configured as inputs on a tem porary or permanent bas is, func-
tions requiring up to 21 inputs and only a single output and
down to 12 inputs and 10 outputs are possible. The 10 potential outputs are enabled using product terms. Any output pin
may be permanently selected as an output or arbitrarily enabled as an output and an input through the selective use of
individual product terms associated with each o utp ut. Ea ch of
these outputs is ac hieved through an individual pro grammable
macrocell. These macrocells are programmable to provide a
combinatorial or regis tered inverting or non-in verting output. In
a registered mode of operat ion, the output of the regis ter is fed
back into the array, providing current status information to th e
array. This information is available for establishing the next
result in applicati ons such as control state machines. In a combinatorial configur ati on, the com bi na toria l output or, if th e ou tput is disabled, the sign al present on the I/O pi n is made available to the array. The flexibility provided by both
programmable produc t term control of the outputs and variable
product terms allows a significant gain in functional density
through the use of programmable logic.
Along with this increase in functional density, the Cypress
P ALCE22V10 provide s lower-power oper ation through t he use
of CMOS technology, and increased testability with Flash reprogrammability.
Configuration Table
Registered/Combinatorial
C
1
00Registered/Active LOW
01Registered/Active HIGH
10Combinatorial/Active LOW
11Combinatorial/Active HIGH
C
0
Configuration
Document #: 38-03027 Rev. **Page 2 of 13
Macrocell
PALCE22V10
AR
OUTPUT
SELECT
QD
MUX
CP
SP
INPUT/
FEEDBACK
MUX
S
1
C
1
C
0
Maximum Ratings
(Above which the useful life may be impaired. For us er guidelines, not tested.)
Storage Temperature .................................–65
Ambient Temperature with
Power Applied.............................................–55
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)...........................................–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State...............................................–0.5V to +7.0V
DC Input Voltage............................................–0.5V to +7.0V
Output Current into Outputs (LOW).............................16 mA
Note:
is the “instant on” case temperature.
1. T
A
°C to +150°C
°C to +125°C
Q
MACROCELL
SS
10
CE22V10–4
DC Programming Voltage.............................................12.5V
Latch-Up Current.....................................................>200 mA
Commercial0°C to +75°C 5V ±5%
Industrial–40°C to +85°C5V ±10%
[1]
Military
Ambient
Temperature
V
–55°C to +125°C 5V ±10%
CC
Document #: 38-03027 Rev. **Page 3 of 13
PALCE22V10
]
Electrical Characteristics Over the Operating Range
ParameterDescriptionTest ConditionsMin.Max.Unit
V
V
V
V
I
IX
I
OZ
I
SC
I
CC1
I
CC2
OH
OL
IH
IL
[4]
[6]
Output HIGH VoltageVCC = Min.,
VIN = VIH or V
Output LOW VoltageVCC = Min.,
= VIH or V
V
IN
Input HIGH LevelGuaranteed Inp ut Logical HIGH V oltage for All Inputs
Input LOW LevelGuaranteed Input Logical LOW Voltage for All Inputs
Input Leakage CurrentVSS < VIN < VCC, VCC = Max.–1010µA
Output Leakage CurrentVCC = Max., VSS < V
Output Short Circuit Current VCC = Max., V
Standby Power Supply
Current
VCC = Max.,
= GND,
V
IN
Outputs Open in
Unprogrammed
Device
Operating Power Supply
Current
VCC = Max., VIL =
= 3V,
0V, V
IH
Output Open, Device Programmed
as a 10-Bit
Counter,
f = 25 MHz
NMinimum Reprogramm ing Cycle sNormal Programming Conditions100Cycles
Notes:
2. See the last page of this specificat io n for Gro up A subgroup testing information.
3. These are absolute values with respect to device ground. All overshoots due to system or tester noise are included.
(Min.) is equal to -3.0V for pulse durations less than 20 ns.
4. V
IL
5. Not more than one output shou ld be test ed at a time. Dura tion of the short circui t should not be more than one se cond. V
caused by tester ground degrad ation.
6. Tested initially and after any design or process changes that may affect these parameters.
= 0.5V has been chosen to a void test problems
OUT
Document #: 38-03027 Rev. **Page 4 of 13
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