Cypress Semiconductor PALC22V10D-25JI, PALC22V10D-25KMB, PALC22V10D-25LMB, PALC22V10D-25PC, PALC22V10D-25PI Datasheet

For new designs, please refer to the PALCE22V10

PALC22V10D

Flash Erasable, Reprogrammable CMOS PAL® Device

Features

• Advanced second-generation PAL architecture

•Low power
—90 mA max. commercial ( 10 ns)
—130 mA max. com me rcial (7.5 n s)

• CMOS Flash EPROM technolog y for electric al erasabil-

ity and reprogrammabilit y

• Variable product terms
—2 x(8 through 16) product terms

• User-programmable macrocell
—Output polarity control
—Individually selectable for registered or combinato-

rial operation

• Up to 22 input terms and 10 outputs

• DIP, LCC, and PLCC available
—7.5 ns commercial ver sion

5 ns t

CO

5 ns t

S

7.5 ns t
133-MHz state machine

—10 ns military and industrial ver sions

6 ns t
6 ns t
10 ns t
110-MHz state machine

—15-ns comme rc ia l an d m ilitary

versions

—25-ns comme rc ia l an d m ilitary

versions

• High reliability
—Proven Flash EPROM technology

100% programming and functional testing

PD

CO
S

PD

Functional Description

The Cypress PALC22V10D is a CMOS Flash Erasable sec­ond-generation programmable array logic device. It is imple­mented with the familiar sum-of-products (AND-OR) logic
structure and the programmable macrocell.

The PALC22V10D is e x e cuted in a 24- pin 300- mil mol ded DIP,
a 300-mil cerDIP, a 28-lead square ceramic leadless chip car­rier , a 28-le ad square pl astic leaded chi p carrier, and provides
up to 22 in puts and 10 output s. The 2 2V10D can b e electrical ly

erased and repr ogr ammed. The prog r ammab le m acroc ell pro­vides the capability of defining the archit ecture of each output
individually. Each of the 10 potential outputs may be specified
as “registered” or “combin atorial. ” P o larit y of each out put ma y
also be individually selected, allowing complete flexibility of
output configuration. Further configurability is provided
through “array” configurable “output enable” for each pot ential
output. This feature allows the 10 outputs to be reconfigured
as inputs on an individual basis , or alternatel y used as a com­bination I/O controlled by the prog rammable array.

PALC22V10D features a variable product term architecture.
There are 5 pair s of pr oduct t erm sums beg innin g at 8 pr oduc t
terms per output and incrementing by 2 to 16 product terms
per output. By providing this variable structure, the PAL C
22V10D is optimized to t he configurations found in a majority
of applications without creating devices that burden the prod­uct term structures with unusab le product terms and low er per­formance.

Additional features of the Cypress PALC22V10D include a
synchronous prese t and an asynchron ous r eset pro duct term.
These product terms are common to all macrocells, eliminat­ing the need to dedicate standard product terms for initial iza­tion function s. T he devi ce autom atically resets upo n powe r-up .

The PALC22V10D, featuring programmable macrocells and
variabl e product terms, provides a device with the flexibility to
implement logic funct ions in the 500- to 800-gate-array com­plexity. Since each of the 10 output pins may be individually
configured as i nputs on a tempo rary or permanent basi s, func ­tions requiring up to 21 inputs and only a single output and
down to 12 inputs and 10 outputs are possible. The 10 poten­tial outputs are enabled using product terms. Any output pin
may be permanently selected as an output or arbitrarily en­abled as an output and an input through the selective use of
individual product terms associated with each output. Each of
these outputs is achie v ed through an indivi dual progr ammabl e
macrocell. These macrocells are programmable to prov ide a
combinatorial or registe red in verting or non-in ve rting output. In
a registered mode of ope ration, the out put of the regist er is fed
back into t he array, providing current status information to the
array. This information is available for establishing the next re­sult in applicat ions such as control stat e machines. In a com­binatorial confi guration, the combinatorial output or, if the out­put is disabled, the signal present on the I/O pin is made
available to the arr ay. The flexibility provided by both program ­mable product t erm control of the output s and variab le produc t
terms allows a significan t gain i n functi onal densi ty throu gh the
use of programmable logic.

Along with this increase in functional density, the Cypress
PALC22V10D provides l ower-p ower oper ation t hrough the use
of CMOS technology, and increased testability with Flash re­programmabili ty.

PAL is a registered trademark of Advanced Micro Devices

Cypress Semiconductor Corporation

• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
July 1991 - Revised October 1995

LogicBlockDiagram(PDIP/CDIP)

V

SS

IIIIIIIIIICP/I

1110987 65432112

8

Reset

10 12 14 16 16 14 12 10 8

PROGRAMMABLE

AND ARRAY

(132 X 44)

PALC22V10D

Macrocell

13 14 15 16 17 18 19 20 21 22 23 24

I I/O

Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell Macrocell

9

I/O

8

I/O

7

I/O

6

I/O

5

I/O

4

I/O

3

I/O

2

I/O

1

I/O

0

PinConfiguration

PLCC

Top View

I9I

CP/I

4 3 2 2827 261

5
6
7
8
9
10
11

121314 1516 1718

I

I

SS

V

NC

NC

0

1

CC

V

I/O

I/O8

I/O

25

2

I/O

24

3

I/O

23

4

N/C

22

I/O

21

5

I/O

20

6

I/O

19

7

I

I/O

I/O

V10D–3

NC

I
I
I

I
I
I

LCC

Top View

I9I

CP/I

4 3 2 282726
5
6
7
8
9
10
11

12131415161718

I

I

SS

V

0

1

CC

V

I/O

I/O

NC

1

25

I/O

NC

2

24

I/O

3

23

I/O

4

22

N/C

21

I/O

5

20

I/O

6

19

I/O

7

I/O

V10D–2

8

I

I/O

NC

I
I
I

I
I
I

Configuration Table

Configuration Table

Registered/Combinatorial

C

1

0 0 Registered/Active LOW
0 1 Registered/Active HIGH

C

0

Configuration

C

1

1 0 Combinatorial/Active LOW
1 1 Combinatorial/Active HIGH

Registered/Combinatorial

C

0

Configuration

Preset

V

CC

V10D–1

2

Macrocell

AR

PALC22V10D

OUTPUT
SELECT

QD

MUX

CP

INPUT/

FEEDBACK

MUX

S

1

C

1

C

0

Q

SP

MACROCELL

SS

10

V10D–4

Maximum Ratings

(Abov e which the useful lif e ma y be impai red. F or user guide­lines, not tested.)

Storage Temperature .....................................−65

°

C to +150°C

Ambient Te mperature with

Power Applied..................................................−55

°

C to +125°C

Supply Voltage to Ground Potential

(Pin 24 to Pin 12).................................................−0.5V to +7.0V

DC Voltage Applied to Outp uts

in High Z State.....................................................−0.5V to +7.0V

DC Input Voltage............................................. -0.5V to +7.0V

Output C ur re n t in to O u tp u ts (LOW) ..... ................. .......16 mA

DC Programming Voltage .............................................12.5V

Electrical Characteristics

Over the Operating Range

Parameter Description T est Conditions Min. Max. Unit

V

OH

V

OL

V

IH

[2]

V

IL

I

IX

I

OZ

I

SC

Output HIGH Voltage VCC = Min.,

V

= VIH or V

IN

IL

Output LOW Voltage VCC = Min.,

V

= VIH or V

IN

IL

Input HIGH Level Guaranteed Input Logical HIGH Voltage for All Inputs
Input LOW Level Guaranteed Input Logical LOW Voltage for All Inputs
Input Leakage Current VSS < VIN < VCC, VCC = Max. -10 10
Output Leakage Current VCC = Max., VSS < V
Output Short Circuit Current VCC = Max., V

Latch-Up Current .....................................................>200 mA

Static Discharge Voltage

(per MIL-STD-883, Method 3015) .............. ............ ...>2001V

Operating Range

Ambient

Range

Commercial 0°C to +75°C 5V ±5%

[1]

Military
Industrial

Note:

1. T

is the “instant on” case temperature.

A

]]

[2]

IOH = -3.2 mA Com’l 2.4 V
IOH = -2 mA Mil/Ind
IOL = 16 mA Com’l 0.5 V
IOL = 12 mA Mil/Ind

< V

OUT

OUT

= 0.5V

CC

[5,6]

Temperature

−55°

C to +125°C 5V ±10%

−40°

C to +85°C 5V ±10%

[3]

[3]

2.0 V

-0.5 0.8 V

-40 40

-30 -90 mA

V

CC

µA
µA

3

PALC22V10D

Electrical Characteristics

Over the Operating Range

[2]

Parameter Description T est Conditions Min. Max. Unit

I

CC1

[6]

I

CC2

Notes:

2. See the last page of this specification for Group A subgroup testing information.

3. These are absolute values with respect to device ground. All overshoots due to system or tester noise are included.

4. V

IL

5. Not more than one output sho uld be t ested at a ti me. Du r ation of the short ci rcuit should not b e more tha n one sec ond. V
caused by tester g round deg r adation.

6. Tested initially and after any design or process changes that may affect these parameters.

Capacitance

Standby Power Supply
Current

VCC = Max.,
V

= GND,

IN

Outputs Open in
Unprogrammed De­vice

Operating Power Supply
Current

VCC = Max., VIL =
0V, V

= 3V,

IH

Output Open, De­vice Program m ed
as a 10-Bit Counter,
f = 25 MHz

(Min.) is equal to -3.0V for pulse durations less than 20 ns.

[6]

10, 15, 25 ns Com’l 90 mA

7.5 ns Com’l 130 mA
15, 25 ns Mil/Ind 120 mA
10 ns Mil/Ind 120 mA
10, 15, 25 ns Com’l 110 mA

7.5 ns Com’l 140 mA
15, 25 ns Mil/Ind 130 mA
10 ns Mil/Ind 130 mA

= 0.5V has been c hosen t o a void tes t prob l ems

OUT

Parameter Description T est Conditions Min. Max. Unit

C

IN

C

OUT

Endurance Characteristics

Input Capacitance VIN = 2.0V @ f = 1 MHz 10 pF
Output Capacitance V

= 2.0V @ f = 1 MHz 10 pF

OUT

[6]

Parameter Description Test Conditions Min. Max. Unit

N Minimum Reprogramming Cycles Normal Programming Conditions 100 Cycles

AC Test Loads and Waveforms

R1238

Ω

5V

OUTPUT

INCLUDING
JIG AND
SCOPE

(319ΩMIL)

C

L

R2170

Ω

(236ΩMIL)

5V

OUTPUT

INCLUDING
JIG AND
SCOPE

(a) (b)

3.0V

GND

<2ns <2ns

Equivalent to: THÉ VENIN EQUIVALENT(Commercial) Equivalent to: THÉ VENIN EQUIVALENT(Military)

99

OUTPUT

Ω

2.08V=V

thc

ALL INPUT PULSES

90%

10%

V10D–6

(319ΩMIL)

(d)

R1238

5pF

Ω

90%

OUTPUT

R2170

Ω

(236ΩMIL)

10%

V10D–5

OUTPUT

136

Ω

2.13V=V

(c)

C

L

thm

V10D–7

750
(1.2K
MIL)

Ω

Ω

4