256K x 36/512K x 18 Pipelined SRAM
CY7C1360A/GVT71256D36
CY7C1362A/GVT71512D18
PRELIMINARY
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
May 9, 2001
1CY7C1329
Features
• Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns
• Fast clock speed: 225, 200, 166, and 150 MHz
•Fast OE
access times: 2.5 ns, 3.0 ns, and 3.5 ns
• Optimal for depth expansion (one cycle chip deselect
to eliminate bus contention)
• 3.3V –5% and +10% power supply
• 3.3V or 2.5V I/O supply
• 5V tolerant inputs except I/Os
• Clamp diodes to V
SS
at all inputs and outputs
• Common data inputs and data outputs
• Byte Write Enable and Global Write contr ol
• Multiple chip enables for depth expansion:
three chip enables f or T A package ver sion and two chip
enables for B and T packa ge ver s ions
• Address pipeline capability
• Address, data, and control registers
• Internally self-timed Write Cycle
• Burst control pins (interleaved or linear burst sequence)
• Automatic po wer-down for portable applications
• JTAG boundary scan for B and T package version
• Low profile 11 9-bump, 14-mm x 22-mm PBGA (Ball Grid
Array) and 100-pin TQFP packages
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1360A/GVT71256D36 and CY7C1362A/
GVT71512D18 SRAMs in tegrate 262 ,144x36 and 524,28 8x18
SRAM cells with advanced synchronous peripheral circuitry
and a 2-bit counter for inter nal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining
Chip Enable (CE
), depth-expansion Chip Enables (CE2 and
CE2), burst control inpu ts (ADSC, ADSP, and ADV), Write Enables (BWa
, BWb, BWc, BWd , and BWE), and global write
(GW
). However, the CE2 chip enable input i s only available for
the TA package version.
Asynchronous inputs include the Output Enable (OE
) and
burst mode cont rol (MODE). Th e data outp uts (Q), enab led b y
OE
, are also asynchronous.
Addresses and chip enables are registered with either Address Status Processor (ADSP
) or Address Status Controller
(ADSC
) input pins. Subsequen t burst addresses can be inter-
nally generated as co ntrolled b y the Burst Advanc e Pin (AD V).
Address, data in puts, an d write contro ls are registere d on-chip
to initiate self-timed WRITE cycle. WRITE cycles can be one
to four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BWa
controls DQa. BWb controls DQb. BWc controls DQc. BWd
controls DQd. BWa, BW b, BWc, and BWd can be active only
with BWE
being LOW. GW being LOW causes all bytes to be
written. The x18 v ersion on ly has 18 data inpu ts/outputs (DQa
and DQb) along with BW a
and BWb (no BWc, BWd, DQc , and
DQd).
For the B a nd T pac kage v ers ions, four pins are used to imple-
ment JTAG test capabilitie s: Test Mode Select (TM S), Test Data-In (TDI), Test Clock (TCK), and Test Data-Out (TDO). The
JTAG circuitry is used to serially shift data to and from the
device. JTAG inputs use LVTTL/LVCMOS levels to shift data
during this testing mo de of oper ation . The TA pac kage v ersio n
does not offer the JTAG capability.
The CY7C1360A/GVT71256D36 and CY7C1362A/
GVT71512D18 operate from a +3.3V power supply. All inputs
and outputs are LVTTL compatible.
Selection Guide
7C1360A-225
71256D36-4.4
7C1362A-225
71512D18-4.4
7C1360A-200
71256D36-5
7C1362A-200
71512D18-5
7C1360A-166
71256D36-6
7C1362A-166
71512D18-6
7C1360A-150
71256D36-6.7
7C1362A-150
71512D18-6.7
Maximum Access Time (ns) 2.5 3.0 3.5 3.5
Maximum Operating Current (mA) Commercial 570 510 425 380
Maximum CMOS Standby Curren t (mA) 10 10 10 10