Cypress Semiconductor CYM1836PZ-25C, CYM1836PZ-20C, CYM1836PZ-15C, CYM1836PM-45C, CYM1836PM-35C Datasheet
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CYM1836
128K x 32 Static RAM Module
Features
constructed from four 128K x 8 SRAMs in SOJ packages
mounted on an epoxy laminate board with pins. Four chip se-
• High-density 4-megabit SRAM module
• 32-bit standard footprint supports densities from 16K
x 32 through 1M x 32
• High-speed CMOS SRAMs
—Access time of 15 ns
• Low active power
—2.6W (max.) at 20 ns
• SMD technology
• TTL-compatible inputs and outputs
• Low profile
—Max. height of 0.57 in.
• Small PCB footprint
—0.78 sq. in.
• Av ailable in SIMM, ZIP f ormat. SIMM suitable for vertical
or angled sockets.
Functional Description
The CYM1836 is a high-performance 4-megabit static RAM
lects (CS
the four bytes. Reading or writing can be executed on individual bytes or any combination of multiple bytes through proper
use of selects.
Writing to each byte is accomplished when the appropriate
Chip Select (CS
LOW. Data on the input/ outp ut pi ns (I/O ) is wri tte n into the
memory location specifi ed on the ad dre ss pins (A
A
Reading the device is accomplished by taking the Chip Select
(CS
these conditions, the contents of the memory location
specified on the address pins will appear on the data input/output pins (I/O).
The data input/output pins stay at the high-impedance state
when write enable is LOW or the appropriate chip selects are
HIGH.
Two pins (PD
ory density in applications where alternate versions of the
JEDEC-standa rd mod ule s can be inte rcha nged .
module organized as 128K words by 32 bits. This module is
Logic Block Diagram Pin Configuration
−
PD
OPEN
0
−
PD
OPEN
−
A
A
0
16
OE
WE
CS
1
CS
2
CS
3
CS
4
1
17
128K x 8
SRAM
128K x 8
SRAM
128K x 8
SRAM
128K x 8
SRAM
I/O
4
I/O
4
I/O
4
I/O
4
1836–1
−
I/O
0
7
−
I/O
8
15
−
I/O
16
23
−
I/O
24
31
, CS2, CS3, CS4) are used to independently enable
1
) and Write Enable (WE) inputs are both
through
16
).
0
) LOW while Write Enable (WE) remains HIGH. Under
and PD1) are used to identify module mem-
0
ZIP/SIMM
Top View
GND
1
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
3
5
7
9
PD
I/O
I/O
I/O
I/O
A
A
A
I/O
I/O
I/O
I/O
GND
A
CS
CS
NC
OE
I/O
I/O
I/O
I/O
A
A
A
V
A
I/O
I/O
I/O
I/O
1836–2
1
8
9
10
11
0
1
2
12
13
14
15
15
2
4
24
25
26
27
3
4
5
CC
6
28
29
30
31
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
PD
I/O
I/O
I/O
I/O
V
CC
A
A
A
I/O
I/O
I/O
I/O
WE
A
CS
CS
A
GND
16
17
18
19
A
A
A
A
20
21
22
23
GND
0
0
1
2
3
7
8
9
4
5
6
7
14
1
3
16
10
11
12
13
Cypress Semiconductor Corporation
• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
February 15, 1999
CYM1836
Selection Guide
1836–15 1836–20 1836–25 1836–30 1836–35 1836–45
Maximum Access Time (ns) 15 20 25 30 35 45
Maximum Operating Current (mA) 760 480 480 480 480 480
Maximum Standby Current (mA) 180 100 100 100 100 100
Shaded area contains preliminary information.
Maximum Ratings
Operating Range
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................–55°C to +125°C
Commercial 0°C to +70°C 5V ± 10%
Ambient Temperature with
Po wer Applied...............................................–10°C to +85°C
Supply Voltage to Ground Potential...............–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State...............................................–0.5V to +7.0V
DC Input Voltage............................................–0.5V to +7.0V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
I
SB2
Shaded area contains preliminary information.
Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 2.4 V
Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 V
Input HIGH Voltage 2.2 V
Input LOW Voltage –0.5 0.8 –0.5 0.8 V
Input Load Current GND < VI < V
CC
Output Leakage Current GND < VO < VCC, Output Disabled –20 +20 –20 +20 µA
VCC Operating Supply Current VCC = Max., I
Automatic CS Power-Down
[1]
Current
Automatic CS Power-Down
[1]
Current
VCC = Max., CS > VIH,
Min. Duty Cycle = 100%
VCC = Max., CS > VCC – 0.2V,
> VCC – 0.2V or VIN < 0.2V
V
IN
= 0 mA, CS < V
OUT
Range
Ambient
Temperature V
1836–20, 25,
1836–15
CC
30, 35, 45
2.2 V
–20 +20 –20 +20 µA
IL
760 480 mA
180 100 mA
60 28 mA
CC
CC
UnitMin. Max. Min. Max.
V
Capacitance
[2]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Notes:
1. A pull-up resistor to V
2. Tested on a sample basis.
3. 20 pF on CS
CC
, 40 pF all others.
Input Capacitance
Output Capacitance 15 pF
on the CS input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
[3]
TA = 25°C, f = 1 MHz,
= 5.0V
V
CC
40/20 pF
2
AC Test Loads and Waveforms
CYM1836
Ω
5V
OUTPUT
INCLUDING
JIG AND
SCOPE
Equivalent to: THÉ VENIN EQUIVALENT
OUTPUT
R1 481
OUTPUT
R2
Ω
167
Ω
255
INCLUDING
JIG AND
SCOPE
1.73V
30 pF
(a) (b)
5V
5 pF
R1 481
Ω
R2
255
1836–3
3.0V
GND
Ω
< 5ns < 5 ns
ALL INPUT PULSES
90%
10%
90%
10%
1836–4
3
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