Cypress Semiconductor CY7C197-45VCT, CY7C197-45VC, CY7C197-15VCT, CY7C197-15VC, CY7C197-12VCT Datasheet

256Kx1 Static RAM

CY7C197

Cypress Semiconductor Corporation

• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
October 4, 1999

Features

• High speed
—12 ns

• CMOS for optimum speed/power

• Low active power
—880 mW

• Low standb y p ow er
—220 mW

• TTL-compatibl e inputs and outputs

• Automat ic power-down when deselected

Functional Description

The CY7C197 is a high-performance CMOS stati c RAM orga­nized as 256K words b y 1 bit. Easy memory ex pansion i s pro-

vided by an activ e LOW Chi p Enab le (CE

) and three-s tate driv­ers. The CY7C197 has an automatic power-down feature,
reducing the powe r consumption by 75% when desel ected.

Writing to the device is accomplished when the Chip Enable
(CE

) and Write Enab le (WE) input s are both LOW. Data on the

input pin (D

IN

) is written into the memory location spe cified on

the address pins (A

0

through A17).

Reading the device is accomplished by taking chip enable
(CE

) LOW while Write Enable (WE) remains HIGH. Under
these conditions the co ntents of the memory locat ion speci fied
on the address pins will appear on th e data outp ut (D

OUT

) pin.

The output pin stays in a high-impedance state when Chip
Enable (CE

) is HIGH or Write Enable (WE) is LOW.

The CY7C197 utilizes a die coat to insure alpha immunity.

WE

GND

28

LogicBlock Diagram Pin Configurations

1024 x256

ARRAY

A

1

A

2

A

3

A

4

A5A

6

A

7

A

8

COLUMN

DECODER

ROW DECODER

SENSE AMPS

POWER

DOWN

WE

CE

4
5
6
7
8
9
10

321 27

1314151617

26
25
24
23
22
21
20

1
2
3
4
5
6
7
8
9
10
11

14

15

16

20
19
18
17

21

24
23
22

Top View

DIP/SOJ

7C197

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

CE

V

CC

A

17

A

16

A

15

A

14

A

11

A

10

A

9

D

IN

A

13

A

12

D

OUT

11
12

19
18

A

2

V

CC

A

3

A

4

A

5

A

6

A

7

A

8

NC

A

9

GND

WE

7C197

Top View

LCC

12 13

INPUT BUFFER

DO

DI

A

0

A9A10A11A

12

A

17

A

16

A

15

A

14

A

13

CE

D

IN

A1A0A

17

NC

NCNC

D

OUT

A

16

A

15

A

14

A

11

A

10

A

13

A

12

C197-1

C197-2 C197-3

Selection Guid e

7C197-12 7C197-15 7C197-20 7C197-25 7C197-35 7C197-45

Maximum Access Time (ns) 12 15 20 25 35 45
Maximum Operating Curr ent (mA) 150 140 135 95 95
Maximum Standby Current (mA) 30 30 30 30 30 30

CY7C197

2

Maximum Ratings

(Above which the useful life may be impair ed. For user guide­lines, not tested.)

Storage Temperature .....................................−65

°

C to +150°C

Ambient Temperature with

Po wer Applied..................................................−55

°

C to +125°C

Supply Voltage to Ground Potential

(Pin 24 to Pin 12).................................................−0.5V to +7.0V

DC V oltage Applied to Outputs
in High Z State

[1]

....................................... −0.5V to V

CC

+ 0.5V

DC Input Voltage

[1]

.................................... −0. 5V to V

CC

+ 0.5V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage .......... ............ ............ ........ >2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current............. .. .......... .. .................... .. ... >200 mA

Operating Range

Range

Ambient

Temperature

V

CC

Commercial 0°C to +70°C 5V ± 10%

Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions

7C197-12 7C197-15

UnitMin. Max. Min. Max.

V

OH

Output HIGH Voltage VCC = Min., IOH = −4.0 mA 2.4 2.4 V

V

OL

Output LOW Voltage VCC = Min. IOL=12.0 mA 0.4 0.4 V

V

IH

Input HIGH Voltage 2.2 V

CC

+ 0.3V

2.2 V

CC

+0.3V

V

V

IL

Input LOW Voltage

[1]

−0.5 0.8 −0.5 0.8

V

I

IX

Input Load Current GND < VI < V

CC

−5+5−5+5µA

I

OZ

Output Leakage Current GND < VO < VCC, Output Disabled −5+5−5+5

µA

I

OS

Output Short
Circuit Current

[2]

VCC = Max., V

OUT

= GND −300 −300 mA

I

CC

VCC Oper ating
Supply Current

VCC = Max., I

OUT

= 0 mA,

f = f

MAX

= 1/t

RC

150 140 mA

I

SB1

Automati c C E Power-Down
Current—TTL Inputs

[3]

Max. VCC, CE > VIH, VIN > VIH or
V

IN

< VIL, f = f

MAX

30 30 mA

I

SB2

Automati c C E Power-Down
Current—CMOS Inputs

[3]

Max. VCC, CE > VCC − 0.3V,
V

IN

> VCC − 0.3V or VIN < 0.3V

10 10

mA

Notes:

1. V

(min.)

= −2.0V for pulse durations of less than 20 ns.

2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.

CY7C197

3

Electrical Characteristics

Over the Operating Range (conti nued)

Parameter Description T est Condi tions

7C197-20

7C197-25, 35, 45

UnitMin. Max. Min. Max.

V

OH

Output HIGH Voltage VCC = Min., IOH = −4.0 mA 2.4 2.4 V

V

OL

Output LOW Voltage VCC = Min. IOL= 12.0mA 0.4 0.4 V

V

IH

Input HIGH Voltage 2.2 V

CC

+ 0.3V

2.2 V

CC

+ 0.3V

V

V

IL

Input LOW Voltage

[1]

−0.5

0.8

−0.5

0.8 V

I

IX

Input Load Current GND < VI < V

CC

−5

+5

−5

+5

µA

I

OZ

Output Leakage Current GND < VO < VCC, Output Disabled

−5

+5

−5

+5

µA

I

OS

Output Short
Circuit Current

[2]

VCC = Max., V

OUT

= GND

−300 −300

mA

I

CC

VCC Oper ating
Supply Current

VCC = Max., I

OUT

= 0 mA,

f = f

MAX

= 1/t

RC

135 95 mA

I

SB1

Automatic CE Power Do wn
Current—TTL Inputs

[3]

Max. VCC, CE > VIH, VIN > VIH or
V

IN

< VIL, f = f

MAX

30 30 mA

I

SB2

Automatic CE Power -Down
Current—CMOS Inputs

[3]

Max. VCC, CE > VCC − 0.3V,
V

IN

> VCC − 0.3V or VIN < 0.3V

15 15 mA

Capacitance

[4]

Parameter Description Test Conditions Max. Unit

C

IN

Input Capacitance TA = 25°C, f = 1 MHz,

V

CC

= 5.0V

8 pF

C

OUT

Output Capacitance 10 pF

AC Test Loads and Waveforms

[5]

Notes:

4. Tested initially and after any design or process changes that may affect these parameters.

5. t

r

= < 3 ns for the -12 and -15 speeds. tr = < 5 ns for the -20 and slower speeds.

R2
255

Ω

(255ΩMIL)

R1 329

Ω

3.0V

5V

OUTPUT

R1 329

Ω

R2
202

Ω

(255ΩMIL)

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

<t

r

<t

r

5V

OUTPUT

5pF

INCLUDING

JIG AND

SCOPE

(a) (b)

OUTPUT 1.90V

Equivalent to: THÉ VENIN EQUIVALENT

Commercial

ALL INPUT PULSES

C197-4

C197-5

125

Ω

CY7C197

4

Switching Characteristics

Over the Operating Range

[6]

Parameter Description

7C197-12

7C197-15 7C197-20 7C197-25 7C197-35 7C197-45

UnitMin. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.

READ CYCLE

t

RC

Read Cycle Time 12 15 20 25 35 45 ns

t

AA

Address to
Data Val id

12 15 20 25 35 45 ns

t

OHA

Output Hold from
Address Change

3 3 3 3 3 3 ns

t

ACE

CE LOW to
Data Val id

12 15 20 25 35 45 ns

t

LZCE

CE LOW to
Low Z

[7]

3 3 3 3 3 3 ns

t

HZCE

CE HIGH to
High Z

[7, 8]

5 7 0 9 0 11 0 15 0 15 ns

t

PU

CE LOW to
Power-Up

0 0 0 0 0 0 ns

t

PD

CE HIGH to
Power-Down

12 15 20 20 25 30 ns

WRITE CYCLE

[9]

t

WC

Wri te Cycl e T im e 12 15 20 25 35 45 ns

t

SCE

CE LOW to
Write End

9 10 15 20 30 40 ns

t

AW

Address Set-Up to
Write End

9 10 15 20 30 40 ns

t

HA

Address Hold from
Write End

0 0 0 0 0 0 ns

t

SA

Address Set-Up to
Write Start

0 0 0 0 0 0 ns

t

PWE

WE Pulse Widt h 8 9 15 20 25 30 ns

t

SD

Data Set-Up to
Write End

8 9 10 15 17 20 ns

t

HD

Data Hold from
Write End

0 0 0 0 0 0 ns

t

LZWE

WE HIGH to
Low Z

[7]

2 2 3 3 3 3 ns

t

HZWE

WE LOW to
High Z

[7,8]

7 7 0 10 0 11 0 15 0 15 ns

Notes:

6. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of

1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I

OL/IOH

and 30-pF load capacitance.

7. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

and t

HZWE

is less than t

LZWE

for any given device.

8. t

HZCE

and t

HZWE

are specified with CL = 5 pF as in part (b) in AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage.

9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.

CY7C197

5

Switching Wavefor ms

Notes:

10. WE

is HIGH for read cycle.

11. Device is continuously selected, CE = VIL.

Read Cycle No.1

ADDRESS

DATA OUT PREVIOUS DA TA VAL ID

DATA VALID

t

RC

t

AA

t

OHA

C197-6

[10, 11]

Read Cycle No. 2

50%

50%

DATA VALID

t

RC

t

ACE

t

LZCE

t

PU

DATA OUT

HIGH IMPEDANCE

IMPEDANCE

ICC
ISB

t

HZCE

t

PD

CE

HIGH

V

CC

SUPPLY

CURRENT

C197-7

[10]

Write Cycle No.1

(WE

Controlled)

t

WC

DATA VALID

DATA UNDEFINED

HIGH IMPEDANCE

t

SCE

t

AW

t

SA

t

PWE

t

HA

t

HD

t

HZWE

t

LZWE

t

SD

CE

WE

DATA IN

DATA OUT

ADDRESS

C197-8

[9]

CY7C197

6

Note:

12. If CE

goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.

Switching Wavefor ms

(continue d)

Write Cycle No. 2 (CEControlled)

t

WC

DATA VALID

HIGH IMPEDANCE

t

SCE

t

AW

t

SA

t

PWE

t

HA

t

HD

t

SD

ADDRESS

CE

WE

DATA IN

DATA OUT

C197-9

[9, 12 ]

CY7C197

7

Typical DC and AC Characteristics

1.2

1.4

1.0

0.6

0.4

0.2

4.0 4.5 5.0 5.5 6.0

1.6

1.4

1.2

1.0

0.8

−

55 25 125

-55 25 125

1.2

1.0

0.8

NORMALIZED t

AA

120
100

80
60
40
20

0.0 1.0 2.0 3.0 4.0

OUTPUT SOURCE CURRENT (mA)

SUPPLY VOLTAGE(V)

NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE

NORMALIZEDACCESS TIME
vs.AMBIENT TEMPERATURE

AMBIENT TEMPERATURE(°C)

NORMALIZED SUPPLY

CURRENT

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE(°C)

OUTPUT VOLTAGE(V)

OUTPUT SOURCECURRENT
vs. OUTPUT

VOLTAGE

0.0

0.8

1.4

1.1

1.0

0.9

4.0 4.5 5.0 5.5 6.0

NORMALIZED t

SUPPLY VOLTAGE(V)

NORMALIZED ACCESSTIME
vs.SUPPLY

VOLTAGE

120

140

100

60
40

20

0.01.02.03.04.0

OUTPUT SINK CURRENT (mA)

0

80

OUTPUT VOLTAGE(V)

OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE

0.6

0.4

0.2

0.0

NORMALIZED I , I

CC SB

NORMA LIZED I , I

CC SB

I

SB

I

CC

I

CC

VCC=5.0V

V

CC

=5.0V

T

A

=25°C

V

CC

=5.0V

T

A

=25°C

I

SB

TA=25°C

0.6

0.8

0

AA

1.3

1.2

V

IN

=5.0V

T

A

=25°C

1.4

V

CC

=5.0V

VIN=5.0V

3.0

2.5

2.0

1.5

1.0

0.5

0.0 1.0 2.0 3.0 4.0

NORMALIZED I

PO

SUPPLY VOLTAGE (V)

TYPICAL POWER-ON CURRENT

vs. SUPPLY

VOLTAGE

30.0

25.0

20.0

15.0

10.0

5.0

0 200 400 600 800

DELTA t (ns)

AA

CAPACITANCE (pF)

TYPICAL ACCESS

TIME

CHANGE

vs. OUTPUT LOADING

1.25

1.00

0.75

10 20 30 40

NORMALIZED I

CC

CYCLE FREQUENCY (MHz)

NORMALIZED

I

CC

vs. CYCLE TIME

0.0

5.0

0.0
1000

0.50

V

CC

=4.5V

T

A

=25°C

V

CC

=5.0V

T

A

=25°C

V

IN

=0.5V

CY7C197

8

Document #: 38−00078−M

CY7C19 7 Truth Table

CE WE Input/Output Mode

H X High Z Deselect/Power-Down

L H Data Out Read
L L Data In Write

Ordering Information

Speed

(ns) Ordering Code

Package

Name Pac kage Type

Operating

Range

12 CY7C197-12PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-12VC V13 24-Lead Molded SOJ

15 CY7C197-15PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-15VC V13 24-Lead Molded SOJ

20 CY7C197-20PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-20VC V13 24-Lead Molded SOJ

25 CY7C197-25PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-25VC V13 24-Lead Molded SOJ

35 CY7C197-35PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-35VC V13 24-Lead Molded SOJ

45 CY7C197-45PC P13 24-Lead (300-Mil) Molded DIP Commercial

CY7C197-45VC V13 24-Lead Molded SOJ

Package Diagrams

51-85013-A

24-Lead(300-Mil)MoldedDIP P13/P13A

24-Lead (300-Mil) Molded SOJ V13

51-85030-A