Cypress Semiconductor CY7C185A-45DMB, CY7C185A-35DMB, CY7C185A-25DMB, CY7C185A-20DMB Datasheet
8K x 8 Static RAM
CY7C185A
Cypress Semiconductor Corporation
• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
October 4, 1999
Features
• High speed
—20 ns
• CMOS for optimum speed/power
• Low active power
—743 mW
• Low standb y Pow e r
—220 mW
• TTL-compatibl e inputs and outputs
• Easy memory expansion wi th CE
1
, CE2 and OE feature s
• Automat ic power-down when deselected
Functional Description
The CY7C185A is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is
provided b y an acti ve LO W Chip Enab le (CE
1
), an activ e HIGH
Chip En able (CE
2
), an active LOW Output Enable (OE), and
three-state driv ers. The dev ice has an automatic power-down
feature (CE
1
), reducing the power consumption by over 70%
when deselected. The CY7C185A is in the standard
300-mil-wide DIP package and leadless chip carrier.
Writing to the device is accomplished when the Chip Enable
one (CE
1
) and Write Enable (WE) inputs are both LOW, and
the Chip Enable two (CE
2
) input is HIGH.
Data on the ei ght I/ O pins (I/ O
0
through I/ O7) is written into the
memory location specified on the address pins (A
0
through
A
12
).
Reading the device is accomplished by taking Chip Enable
one (CE
1
) and Output Enable (OE) LOW, while taking Write
Enable (WE
) and Chip Enable two (CE2) HIGH. Under these
conditions, the contents of the memory location specified on
the address pins will appear on the I/O pins.
The I/O pins remain in a hig h-impeda nce stat e when Chip Enable one (CE
1
) or Output Enable (OE) is HI GH, or W r ite En-
able (WE
) or Chip Enable two (CE2) is LOW.
A die coat is used to ensure alpha immunity.
28
Logic Block Diagram
Pin Configurations
C185A–1
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
10
A
9
A11A
12
I/O
0
4
5
6
7
8
9
10
321 27
1314151617
26
25
24
23
22
21
20
11
12
19
18
A
6
V
CC
NC
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
GND
Top View
LCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
WE
I/O3I/O
4
I/O
2
I/O
5
A5A
4
8K x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
ROW DECODER
SENSE AMPS
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
DIP
C185A–2
C185A–3
I/O
1
Selection Guid e
[1]
7C185A–20 7C185A–25 7C185A–35 7C185A–45
Maximum Access Time (ns) 20 25 35 45
Maximum Opera ting Current (mA) Military 135 125 125 125
Maximum Standby Current (mA) Military 40/20 40/20 30/20 30/20
Note:
1. For commercial specifications, see the CY7C185 data sheet.
CY7C185A
2
Maximum Ratings
(Above which the useful life may be impaired. For use r gui delines, not tested.)
Storage Temperature ......................... .. .......–65°C to +150°C
Ambient Temperature with
Power Applied.............................................. –55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pi n 14 ) ........ ... .. .............................. –0.5V to +7.0V
DC V oltage Applied to Outputs
in High Z State
[2]
.....................................................–0.5V to + 7. 0 V
DC Input Voltage
[2]
................................................. –0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......... ............ ............ ........ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current............. .. .......... .. .......... .......... .. ... >200 mA
Operating Range
Range
Ambient
Temperature
[3]
V
CC
Military
[4]
–55°C to +125°C 5V ± 10%
Electrical Characteristics
Ove r th e Op er ati ng Rang e
[4]
7C185A–20
Parameter Description Te st Condi tions Min. Max. Unit
V
OH
Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 V
V
OL
Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
V
V
IL
Input LOW Voltage
[2]
–0.5 0.8 V
I
IX
Input Load Current GND ≤ VI ≤ V
CC
–10 +10
µA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
CC
, Output Disabled –10 +10
µA
I
OS
Output Short Circuit Current
[5]
VCC = Max., V
OUT
= GND –300 mA
I
CC
V
CC
Operating Supply Current VCC = Max. I
OUT
= 0 mA Military 135 mA
I
SB1
Automati c CE1 Power-Down
Current
Max. VCC, CE1 ≥ V
IH,
Min. Duty Cycle = 100%
Military 40 mA
I
SB2
Automati c CE1 Power-Down
Current
Max. VCC, CE1 ≥ V
CC
–0.3V
V
IN
≥ V
CC
–0.3Vor V
IN
≥ 0.3V
Military 20 mA
Electrical Characteristics
Ove r th e Op er ati ng Rang e
[4]
(continued)
7C185A–25 7C185A–35, 45
Parameter Description T est Condi tions Min. Max. Min. Max. Unit
V
OH
Outp ut HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 2.4 V
V
OL
Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
2.2 V
CC
V
V
IL
Input LOW Voltage
[2]
–0.5 0. 8 –0.5 0.8 V
I
IX
Input Load Current GND ≤ VI ≤ V
CC
–10 +10 –10 +10
µA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
CC
, Output Disabled –10 +10 –10 +10
µA
I
OS
Output Short
Circuit Current
[5]
VCC = Max., V
OUT
= GND –300 –300 mA
I
CC
V
CC
Oper ati ng Su pp ly
Current
VCC = Max., I
OUT
= 0 mA Military 125 125 mA
I
SB1
Auto mati c C E
1
Power-Down Current
Max. VCC, CE1 ≥ V
IH,
Min. Dut y Cyc le=100%
Military 40 30 mA
I
SB2
Auto mati c C E
1
Power-Down Current
Max. VCC, CE1 ≥ V
CC
–0.3V
V
IN
≥ V
CC
–0.3V or V
IN
≥ 0.3V
Military 20 20 mA
Notes:
2. V
IL
(min.) = – 3.0V for pulse durations less than 30 ns.
3. TA is the case temperature.
4. See the last page of this specification for Group A subgroup testing information.
5. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
CY7C185A
3
Capacitance
[6]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance TA = 25°C, f = 1 MHz,
V
CC
= 5.0V
10 pF
C
OUT
Output Capacitance 10 pF
Note:
6. Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
3.0V
5V
OUTPUT
R1 481
Ω
R2
255
Ω
30pF
GND
90%
90%
10%
≤
5ns
≤
5
ns
5V
OUTPUT
R2
255
Ω
5
pF
(a) (b)
OUTPUT 1.73V
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
R1 481
Ω
10%
Equivalentto: THÉVENIN EQUIVALENT
C185A–4 C185A–5
ALL INPUT PULSES
167
Ω
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