Cypress Semiconductor CY7C1511V18, CY7C1515V18, CY7C1513V18, CY7C1526V18 Specification Sheet

72-Mbit QDR™-II SRAM 4-Word

Burst Architecture

CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Features

Functional Description

■ Separate independent read and write data ports
❐ Supports concurrent transactions

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces on both read and write ports

(data transferred at 600 MHz) at 300 MHz

■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ Available in x8, x9, x18, and x36 configurations

■ Full data coherency, providing most current data

■ Core V

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

= 1.8 (± 0.1V); IO V

DD

= 1.4V to V

DDQ

DD

The CY7C1511V18, CY7C1526V18, CY7C1513V18, and
CY7C1515V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR-II archi­tecture has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus that exists with
common IO devices. Each port can be accessed through a
common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR-II read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with four 8-bit words
(CY7C1511V18), 9-bit words (CY7C1526V18), 18-bit words
(CY7C1513V18), or 36-bit words (CY7C1515V18) that burst
sequentially into or out of the device. Because data can be trans­ferred into and out of the device on every rising edge of both input
clocks (K and K

and C and C), memory bandwidth is maximized
while simplifying system design by eliminating bus
“turn-arounds”.

Depth expansion is accomplished with port selects, which
enables each port to operate independently.

All synchronous inputs pass through input registers controlled by
the K or K
registers controlled by the C or C

input clocks. All data outputs pass through output

(or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.

Configurations

CY7C1511V18 – 8M x 8
CY7C1526V18 – 8M x 9
CY7C1513V18 – 4M x 18
CY7C1515V18 – 2M x 36

Selection Guide

Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit

Maximum Operating Frequency 300 278 250 200 167 MHz
Maximum Operating Current x8 930 865 790 655 570 mA

x9 940 870 795 660 575
x18 1020 950 865 715 615
x36 1230 1140 1040 850 725

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 38-05363 Rev. *F Revised August 06, 2008

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Logic Block Diagram (CY7C1511V18)

2M x 8 Array

CLK

A

(20:0)

Gen.

K

K

Control

Logic

Address
Register

D

[7:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address
Register

Reg.

Reg.

Reg.

16

21

32

8

NWS

[1:0]

V

REF

Write Add. Decode

Write

Reg

16

A

(20:0)

21

8

CQ

CQ

DOFF

Q

[7:0]

8

8

8

Write

Reg

Write

Reg

Write

Reg

C

C

2M x 8 Array

2M x 8 Array

2M x 8 Array

8

CLK

A

(20:0)

Gen.

K

K

Control

Logic

Address
Register

D

[8:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address
Register

Reg.

Reg.

Reg.

18

21

36

9

BWS

[0]

V

REF

Write Add. Decode

Write

Reg

18

A

(20:0)

21

9

CQ

CQ

DOFF

Q

[8:0]

9

9

9

Write

Reg

Write

Reg

Write

Reg

C

C

2M x 9 Array

2M x 9 Array

2M x 9 Array

2M x 9 Array

9

Logic Block Diagram (CY7C1526V18)

Document Number: 38-05363 Rev. *F Page 2 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Logic Block Diagram (CY7C1513V18)

CLK

A

(19:0)

Gen.

K

K

Control

Logic

Address
Register

D

[17:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address
Register

Reg.

Reg.

Reg.

36

20

72

18

BWS

[1:0]

V

REF

Write Add. Decode

Write

Reg

36

A

(19:0)

20

18

CQ

CQ

DOFF

Q

[17:0]

18

18

18

Write

Reg

Write

Reg

Write

Reg

C

C

1M x 18 Array

1M x 18 Array

1M x 18 Array

1M x 18 Array

18

512K x 36 Array

CLK

A

(18:0)

Gen.

K

K

Control

Logic

Address
Register

D

[35:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address
Register

Reg.

Reg.

Reg.

72

19

144

36

BWS

[3:0]

V

REF

Write Add. Decode

Write

Reg

72

A

(18:0)

19

512K x 36 Array

512K x 36 Array

512K x 36 Array

36

CQ

CQ

DOFF

Q

[35:0]

36

36

36

Write

Reg

Write

Reg

Write

Reg

C

C

36

Logic Block Diagram (CY7C1515V18)

Document Number: 38-05363 Rev. *F Page 3 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Pin Configuration

Note

1. V

SS

/144M and VSS/288M are not connected to the die and can be tied to any voltage level.

The pin configuration for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1511V18 (8M x 8)

1 2 3 4 5 6 7 8 9 10 11

A CQ AAWPSNWS

1

B NC NC NC A NC/288M K NWS
C NC NC NC V
D NC D4 NC V
E NC NC Q4 V
F NC NC NC V

G NC D5 Q5 V

H DOFF V

REF

V

DDQ

V

J NC NC NC V
K NC NC NC V
L NC Q6 D6 V

M NC NC NC V

N NC D7 NC V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

ANCAVSSNC NC D3

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC NC

P NC NC Q7 A A C A A NC NC NC
R TDO TCK A A A C AAATMSTDI

K NC/144M RPS AACQ

0

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

ANCNCQ3

V

SS

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

SS

[1]

NC NC NC
NC D2 Q2
NC NC NC
NC NC NC

V

DDQ

V

REF

NC Q1 D1
NC NC NC
NC NC Q0
NC NC D0

ZQ

CY7C1526V18 (8M x 9)

1 2 3 4 5 6 7 8 9 10 11

A CQ AAWPSNC K NC/144M RPS AACQ
B NC NC NC A NC/288M K BWS
C NC NC NC V
D NC D5 NC V
E NC NC Q5 V
F NC NC NC V

G NC D6 Q6 V

H DOFF V

REF

V

DDQ

V

J NC NC NC V
K NC NC NC V
L NC Q7 D7 V

M NC NC NC V

N NC D8 NC V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

ANCAVSSNC NC D4

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC NC

0

ANCNCQ4

V
V
V
V
V
V
V

V

DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

V

SS

SS

NC NC NC
NC D3 Q3
NC NC NC
NC NC NC

V

DDQ

V

REF

NC Q2 D2
NC NC NC
NC NC Q1
NC NC D1

ZQ

P NC NC Q8 A A C A A NC D0 Q0
R TDO TCK A A A C AAATMSTDI

Document Number: 38-05363 Rev. *F Page 4 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Pin Configuration (continued)

The pin configuration for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1513V18 (4M x 18)

1 2 3 4 5 6 7 8 9 10 11

A CQ
B NC Q9 D9 A NC K BWS
C NC NC D10 V
D NC D11 Q10 V
E NC NC Q11 V
F NC Q12 D12 V

G NC D13 Q13 V

H DOFF V

J NC NC D14 V
K NC NC Q14 V
L NC Q15 D15 V

M NC NC D16 V

N NC D17 Q16 V
P NC NC Q17 A A C A A NC D0 Q0
R TDO TCK A A A C AAATMSTDI

VSS/144M

REF

AWPSBWS

SS

SS
DDQ
DDQ
DDQ

V

DDQ

V

DDQ
DDQ
DDQ
DDQ

SS

SS

1

K NC/288M RPS AACQ

0

ANCNCQ8

ANCAVSSNC Q7 D8

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V
V
V
V
V
V
V

V

DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

V

SS

SS

AAAVSSNC NC D1

[1]

NC NC D7
NC D6 Q6
NC NC Q5
NC NC D5

V

DDQ

V

REF

NC Q4 D4
NC D3 Q3
NC NC Q2
NC Q1 D2

ZQ

CY7C1515V18 (2M x 36)

1 2 3 4 5 6 7 8 9 10 11

A CQ

VSS/288M

AWPSBWS

B Q27 Q18 D18 A BWS
C D27 Q28 D19 V
D D28 D20 Q19 V
E Q29 D29 Q20 V
F Q30 Q21 D21 V

G D30 D22 Q22 V

H DOFF V

REF

V

DDQ

V

J D31 Q31 D23 V
K Q32 D32 Q23 V
L Q33 Q24 D24 V

M D33 Q34 D25 V

N D34 D26 Q25 V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

ANCAVSSD16 Q7 D8

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSQ10 D9 D1

2
3

K BWS
KBWS0AD17Q17Q8

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

1

RPS A

V

SS

V

DDQ

V

DDQ

V

DDQ

V
V
V
V

DDQ
DDQ
DDQ
DDQ

V

SS

V

Q16 D15 D7
Q15 D6 Q6
D14 Q14 Q5
Q13 D13 D5

DDQ

D12 Q4 D4
Q12 D3 Q3
D11 Q11 Q2
D10 Q1 D2

VSS/144M

V

REF

CQ

ZQ

P Q35 D35 Q26 A A C A A Q9 D0 Q0
R TDO TCK A A A C AAATMSTDI

Document Number: 38-05363 Rev. *F Page 5 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Pin Definitions

Pin Name IO Pin Description

D

[x:0]

WPS Input-

NWS

,

0

NWS

,

1

BWS0,

,

BWS

1

BWS

,

2

BWS

3

A Input-

Q

[x:0]

RPS Input-

C Input Clock Positive Input Clock for Output data. C is used in conjunction with C

C

K Input Clock Positive Input Clock In put. The rising edge of K is used to capture synchronous inputs to the device

K

Input-

Synchronous

Data Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
CY7C1511V18 − D
CY7C1526V18 − D
CY7C1513V18 − D
CY7C1515V18 − D

[7:0]
[8:0]
[17:0]
[35:0]

Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a

Synchronous

Input-

Synchronous

Input-

Synchronous

write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D
Nibble Write Select 0, 1 − Active LOW (CY7C151 1V18 Only). Sampled on the rising edge of the K and

K

clocks

when write operations are active
the current portion of the write operations.
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device

. Used to select which nibble is written into the device

NWS

controls D

0

and NWS1 controls D

[3:0]

[7:4]

.

.

during

Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks when
write operations are active. Used to select which byte is written into the device during the current portion
of the write operations. Bytes not written remain unaltered.
CY7C1526V18 − BWS
CY7C1513V18 − BWS0 controls D
CY7C1515V18 − BWS0 controls D
BWS

controls D

2

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device

controls D

0

and BWS3 controls D

[26:18]

[8:0]

and BWS1 controls D

[8:0]

, BWS1 controls D

[8:0]

[35:27].

[17:9]

[17:9].

,

.

Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These

Synchronous

address inputs are multiplexed for both read and write operations. Internally, the device is organized as
8M x 8 (4 arrays each of 2M x 8) for CY7C1511V18, 8M x 9 (4 arrays each of 2M x 9) for CY7C1526V18,
4M x 18 (4 arrays each of 1M x 18) for CY7C1513V18 and 2M x 36 (4 arrays each of 512K x 36) for
CY7C1515V18. Therefore, only 21 address inputs are needed to access the entire memory array of
CY7C1511V18 and CY7C1526V18, 20 address inputs for CY7C1513V18 and 19 address inputs for
CY7C1515V18. These inputs are ignored when the appropriate port is deselected.

Outputs-

Synchronous

Data Output Signals. These pins drive out the requested data when the read operation is active. Valid
data is driven out on the rising edge of the C and C
single clock mode. On deselecting the read port, Q
CY7C1511V18 − Q
CY7C1526V18 − Q
CY7C1513V18 − Q
CY7C1515V18 − Q

[7:0]

[8:0]
[17:0]
[35:0]

clocks during read operations, or K and K when in

are automatically tri-stated.

[x:0]

Read Port Select − Active LOW . Sampled on the rising edge of positive input clock (K). When active, a

Synchronous

read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tri-stated following the next rising edge of
the C clock. Each read access consists of a burst of four sequential transfers.

to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See Application Example on page 10 for further details.

Input Clock Negative Input Clock for Output data. C is used in conjunction with C to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See Application Example on page 10 for further details.

and to drive out data through Q
edge of K.

when in single clock mode. All accesses are initiated on the rising

[x:0]

Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and

to drive out data through Q

when in single clock mode.

[x:0]

[x:0]

.

Document Number: 38-05363 Rev. *F Page 6 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Pin Definitions (continued)

Pin Name IO Pin Description

CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks are shown in the Switching Characteristics on page 24.

CQ

ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

DOFF

TDO Output TDO for JTAG.
TCK Input TCK Pin for JTAG.
TDI Input TDI Pin for JTAG.
TMS Input TMS Pin for JTAG.
NC N/A Not Connected to the Die. Can be tied to any voltage level.

V

/144M N/A Address expansion for 144M. Can be tied to any voltage level.

SS

V

/288M N/A Address expansion for 288M. Can be tied to any voltage level.

SS

V

REF

V

DD

V

SS

V

DDQ

Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

for output data (C

) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings

for the echo clocks are shown in the Switching Characteristics on page 24.

impedance. CQ, CQ, and Q
between ZQ and ground. Alternatively, this pin can be connected directly to V
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

output impedance are set to 0.2 x RQ, where RQ is a resistor connected

[x:0]

, which enables the

DDQ

Input DLL Turn Off − Active LOW . Connecting this pin to ground turns off the DLL inside the device. The

timings in the DLL turned off operation differs from those listed in this data sheet.

Input-

Reference

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.

Power Supply Power Supply Inputs to the Core of the Device.

Ground Ground for the Device.

Power Supply Power Supply Inputs for the Outputs of the Device.

Document Number: 38-05363 Rev. *F Page 7 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Functional Overview

The CY7C1511V18, CY7C1526V18, CY7C1513V18,
CY7C1515V18 are synchronous pipelined Burst SRAMs with a
read port and a write port. The read port is dedicated to read
operations and the write port is dedicated to write operations.
Data flows into the SRAM through the write port and flows out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR-II completely
eliminates the need to turn-around the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1511V18, four 9-bit data transfers in the case of
CY7C1526V18, four 18-bit data transfers in the case of
CY7C1513V18, and four 36-bit data transfers in the case of
CY7C1515V18 in two clock cycles.

Accesses for both ports are initiated on the positive input clock
(K). All synchronous input timing is referenced from the rising
edge of the input clocks (K and K
enced to the output clocks (C and C
clock mode).

All synchronous data inputs (D
controlled by the input clocks (K and K). All synchronous data
outputs (Q

) pass through output registers controlled by the

[x:0]

rising edge of the output clocks (C and C, or K and K when in
single clock mode).

All synchronous control (RPS
through input registers controlled by the rising edge of the input
clocks (K and K

).

CY7C1513V18 is described in the following sections. The same
basic descriptions apply to CY7C1511V18, CY7C1526V18 and
CY7C1515V18.

Read Operations

The CY7C1513V18 is organized internally as four arrays of 1M
x 18. Accesses are completed in a burst of four sequential 18-bit
data words. Read operations are initiated by asserting RPS
active at the rising edge of the positive input clock (K). The
address presented to the address inputs is stored in the read
address register. Following the next K clock rise, the corre­sponding lowest order 18-bit word of data is driven onto the

using C as the output timing reference. On the subse-

Q

[17:0]

quent rising edge of C, the next 18-bit data word is driven onto
the Q
have been driven out onto Q

0.45 ns from the rising edge of the output clock (C or C
when in single clock mode). T o maintain the internal logic, each

K
read access must be allowed to complete. Each read access
consists of four 18-bit data words and takes two clock cycles to
complete. Therefore, read accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second read request. Read accesses can
be initiated on every other K clock rise. Doing so pipelines the

. This process continues until all four 18-bit data words

[17:0]

) and all output timing is refer-

, or K and K when in single

) pass through input registers

[x:0]

, WPS, BWS

. The requested data is valid

[17:0]

) inputs pass

[x:0]

, or K or

data flow such that data is transferred out of the device on every
rising edge of the output clocks (C and C

, or K and K when in

single clock mode).
When the read port is deselected, the CY7C1513V18 first

completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the positive output clock (C). This enables for a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D
the lower 18-bit write data register, provided BWS

is latched and stored into

[17:0]

[1:0]

are both
asserted active. On the subsequent rising edge of the negative
input clock (K

) the information presented to D

into the write data register, provided BWS

[1:0]

is also stored

[17:0]

are both asserted
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Write accesses can
be initiated on every other rising edge of the positive input clock
(K). Doing so pipelines the data flow such that 18 bits of data can
be transferred into the device on every rising edge of the input
clocks (K and K

).

When deselected, the write port ignores all inputs after the
pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1513V18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS

, which are sampled with each set of 18-bit data words.

BWS

1

and

0

Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.

Single Clock Mode

The CY7C1511V18 can be used with a single clock that controls
both the input and output registers. In this mode the device
recognizes only a single pair of input clocks (K and K
both the input and output registers. This operation is identical to
the operation if the device had zero skew between the K/K

clocks. All timing parameters remain the same in this mode.

C/C
To use this mode of operation, the user must tie C and C
at power on. This function is a strap option and not alterable
during device operation.

) that control

and

HIGH

Document Number: 38-05363 Rev. *F Page 8 of 32

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Concurrent Transactions

The read and write ports on the CY7C1513V18 operates
completely independently of one another. As each port latches
the address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. If the ports access the same location when a read follows a
write in successive clock cycles, the SRAM delivers the most
recent information associated with the specified address
location. This includes forwarding data from a write cycle that
was initiated on the previous K clock rise.

Read access and write access must be scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port takes priority (as read operations cannot be
initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port takes priority (as write operations
cannot be initiated on consecutive cycles). Therefore, asserting
both port selects active from a deselected state results in alter­nating read or write operations being initiated, with the first
access being a read.

Depth Expansion

The CY7C1513V18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM, the allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.

to allow the SRAM to adjust its output

SS

, with V

=1.5V. The

DDQ

Echo Clocks

Echo clocks are provided on the QDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR-II. CQ is referenced with respect to C and CQ
with respect to C. These are free-running clocks and are
synchronized to the output clock of the QDR-II. In the single clock
mode, CQ is generated with respect to K and CQ
with respect to K. The timing for the echo clocks is shown in the

Switching Characteristics on page 24.

is referenced

is generated

DLL

These chips use a DLL that is designed to function between 120
MHz and the specified maximum clock frequency. During power
up, when the DOFF is tied HIGH, the DLL is locked after 1024
cycles of stable clock. The DLL can also be reset by slowing or
stopping the input clocks K and K
However, it is not necessary to reset the DLL to lock to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented. The DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note AN5062, DLL Considerations in

QDRII/DDRII/QDRII+/DDRII+.

for a minimum of 30 ns.

Document Number: 38-05363 Rev. *F Page 9 of 32

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CY7C1513V18, CY7C1515V18

Application Example

R = 250ohms

Vt

R

R = 250ohms

Vt

Vt

R

Vt = Vddq/2

R = 50ohms

R

CC#

D
A

SRAM #4

R
P
S
#

W

P
S
#

B

W

S
#

K

ZQ

CQ/CQ#

Q

K#

CC#

D
A

K

SRAM #1

R
P
S
#

W

P
S
#

B

W

S
#

ZQ

CQ/CQ#

Q

K#

BUS

MASTER

(CPU

or

ASIC)

DATA IN

DATA OUT

Address

RPS#
WPS#
BWS#

Source K

Source K#

Delayed K

Delayed K#

CLKIN/CLKIN#

Notes

2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,

↑represents rising edge.

3. Device powers up deselected with the outputs in a tri-state condition.

4. “A” represents address location latched by the devices when transact i on was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.

5. “t” represents the cycle at which a read/write operation is sta rted. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

6. Data inputs are registered at K and K

rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7. It is recommended that K = K

and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging

symmetrically.

8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.

Figure 1 shows four QDR-II used in an application.

Figure 1. Application Example

T ruth Table

The truth table for CY7C1511V18, CY7C1526V18, CY7C1513V18, and CY7C1515V18 follows.

Operation K RPS WPS DQ DQ DQ DQ

Write Cycle:

L-H H

[8]L [9]

D(A) at K(t + 1)↑ D(A + 1) at K(t + 1)↑ D(A + 2) at K(t + 2)↑ D(A + 3) at K(t + 2)↑
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.

Read Cycle:

L-H L

[9]

XQ(A) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑ Q(A + 2) at C(t + 2)↑ Q(A + 3) at C(t + 3)↑
Load address on the rising
edge of K; wait one and a
half cycle; read data on
two consecutive C

and C

rising edges.
NOP: No Operation L-H H H D = X

Standby: Clock Stopped Stopped X X Previous State Previous State Previous State Previous State

Document Number: 38-05363 Rev. *F Page 10 of 32

Q = High-Z

D = X
Q = High-Z

[2, 3, 4, 5, 6, 7]

D = X
Q = High-Z

D = X
Q = High-Z

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Write Cycle Descriptions

Note

10.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS

0

, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on

different portions of a write cycle, as long as the setup and hold requirements are achieved.

The write cycle description table for CY7C1511V18 and CY7C1513V18 follows.

[2, 10]

BWS0/
NWS

0

BWS1/

NWS

K

1

K

Comments

L L L–H – During the data portion of a write sequence:

CY7C1511V18 − bot h nibbles (D
CY7C1513V18 − both bytes (D

) are written into the device.

[7:0]

) are written into the device.

[17:0]

L L – L-H During the data portion of a write sequence :

CY7C1511V18 − bot h nibbles (D
CY7C1513V18 − both bytes (D

) are written into the device.

[7:0]

) are written into the device.

[17:0]

L H L–H – During the data portion of a write sequence :

CY7C1511V18 − only the lower nibble (D
CY7C1513V18 − only the lower byte (D

) is written into the device, D

[3:0]

) is written into the device, D

[8:0]

L H – L–H During the data portion of a write sequence :

CY7C1511V18 − only the lower nibble (D
CY7C1513V18 − only the lower byte (D

) is written into the device, D

[3:0]

) is written into the device, D

[8:0]

H L L–H – During the data portion of a write sequence :

CY7C1511V18 − only the upper nibble (D
CY7C1513V18 − only the upper byte (D

) is written into the device, D

[7:4]

) is written into the device, D

[17:9]

H L – L–H During the data portion of a write sequence :

CY7C1511V18 − only the upper nibble (D
CY7C1513V18 − only the upper byte (D

) is written into the device, D

[7:4]

) is written into the device, D

[17:9]

H H L–H – No da ta is written into the devices during this portion of a write operation.
H H – L–H No data is written into the devices during this portion of a write operation.

Write Cycle Descriptions

The write cycle description table for CY7C1526V18 follows.

[2, 10]

remains unaltered.

[7:4]

remains unaltered.

[17:9]

remains unaltered.

[7:4]

remains unaltered.

[17:9]

remains unaltered.

[3:0]

remains unaltered.

[8:0]

remains unaltered.

[3:0]

remains unaltered.

[8:0]

BWS

L L–H – During the Data portion of a write sequence, the single byte (D
L – L–H During the Data portion of a write sequence, the single byte (D

K K Comments

0

[8:0]
[8:0]

H L–H – No data is written into the device during this portion of a write operation.
H – L–H No data is written into the device during this portion of a write operation.

) is written into the device.
) is written into the device.

Document Number: 38-05363 Rev. *F Page 11 of 32

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CY7C1513V18, CY7C1515V18

Write Cycle Descriptions

The write cycle description table for CY7C1515V18 follows.

[2, 10]

BWS0BWS1BWS2BWS

LLLLL–H–During the Data portion of a write sequence, all four bytes (D

LLLL–L–HDuring the Data portion of a write sequence, all four bytes (D

K K Comments

3

the device.

the device.

) are written into

[35:0]

) are written into

[35:0]

L H H H L–H – During the Data portion of a write sequence, only the lower byte (D

into the device. D

remains unaltered.

[35:9]

L H H H – L–H During the Data portion of a write sequence, only the lower byte (D

into the device. D

H L H H L–H – During the Data portion of a write sequence, only the byte (D

the device. D

[8:0]

H L H H – L–H During the Data portion of a write sequence, only the byte (D

the device. D

[8:0]

H H L H L–H – During the Data portion of a write sequence, only the byte (D

the device. D

[17:0]

H H L H – L–H During the Data portion of a write sequence, only the byte (D

the device. D

[17:0]

H H H L L–H – During the Data portion of a write sequence, only the byte (D

the device. D

[26:0]

H H H L – L–H During the Data portion of a write sequence, only the byte (D

the device. D

[26:0]

remains unaltered.

[35:9]

and D

and D

and D

and D

remains unaltered.

[35:18]

remains unaltered.

[35:18]

remains unaltered.

[35:27]

remains unaltered.

[35:27]

remains unaltered.

remains unaltered.

) is written into

[17:9]

) is written into

[17:9]

) is written into

[26:18]

) is written into

[26:18]

) is written into

[35:27]

) is written into

[35:27]

HHHHL–H–No data is written into the device during this portion of a write operation.

) is written

[8:0]

) is written

[8:0]

HHHH–L–HNo data is written into the device during this portion of a write operation.

Document Number: 38-05363 Rev. *F Page 12 of 32

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CY7C1513V18, CY7C1515V18

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA p ackage. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disab le the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are inter­nally pulled up and may be unconnected. They may alternatively
be connected to V
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select (TMS)

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter­nally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State

Diagram on page 15. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.

Test Data-Out (TDO)

The TDO output pin is used to serially clock data out from th e
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 18).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of th e
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.

through a pull up resistor. TDO must be left

DD

Instruction Register

Three-bit instructions can be serially loaded into the instructi on
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 16. Upon power up, the instruction register i s loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.

When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.

Bypass Register

To save time when se rially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V
the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of th e input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.

The Boundary Scan Order on page 19 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 18.

SS

) when

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction

Codes on page 18. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in this section in detail.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

Document Number: 38-05363 Rev. *F Page 13 of 32

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CY7C1513V18, CY7C1515V18

IDCODE

The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.

SAMPLE Z

The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.

The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.

To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (t
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK

After the data is captured, it is possible to shift out the data by
putting the T AP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.

and tCH). The SRAM clock input might not be captured

CS

captured in the boundary scan register.

PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.

The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.

BYPASS

When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.

EXTEST

The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.

EXTEST OUTPUT BUS TRI-ST ATE

IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.

The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.

This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset HIGH to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.

Reserved

These instructions are not implemented but are reserved for
future use. Do not use these instructions.

Document Number: 38-05363 Rev. *F Page 14 of 32

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CY7C1513V18, CY7C1515V18

TAP Controller State Diagram

TEST-LOGIC
RESET

TEST-LOGIC/
IDLE

SELECT
DR-SCAN

CAPTURE-DR

SHIFT-DR

EXIT1-DR

PAUSE-DR

EXIT2-DR

UPDA TE-DR

1

0

1

1

0

1

0

1

0

0

0

1

1

1

0

1

0

1

0

0

0

1

0

1

1

0

1

0

0

1

1

0

SELECT
IR-SCAN

CAPTURE-IR

SHIFT-IR

EXIT1-IR

PAUSE-IR

EXIT2-IR

UPDA TE-IR

Note

11.The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

The state diagram for the TAP controller follows.

[11]

Document Number: 38-05363 Rev. *F Page 15 of 32

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CY7C1513V18, CY7C1515V18

TAP Controller Block Diagram

0

012..29

3031

Boundary Scan Register

Identification Register

012..

.

.108

012

Instruction Register

Bypass Register

Selection
Circuitry

Selection
Circuitry

TA P Controller

TDI

TDO

TCK
TMS

Notes

12.These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.

13.Overshoot: V

IH

(AC) < V

DDQ

+ 0.85V (Pulse width less than t

CYC

/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than t

CYC

/2).

14.All Voltage referenced to Ground.

TAP Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions Min Max Unit

V

OH1

V

OH2

V

OL1

V

OL2

V

IH

V

IL

I

X

Output HIGH Voltage I
Output HIGH Voltage I
Output LOW Voltage IOL = 2.0 mA 0.4 V
Output LOW Voltage IOL = 100 μA0.2V
Input HIGH Voltage 0.65VDDV
Input LOW Voltage –0.3 0.35V
Input and Output Load Current GND ≤ VI ≤ V

[12, 13, 14]

= −2.0 mA 1.4 V

OH

= −100 μA1.6 V

OH

DD

–5 5 μA

+ 0.3 V

DD

DD

V

Document Number: 38-05363 Rev. *F Page 16 of 32

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TAP AC Switching Characteristics

t

TL

t

TH

(a)

TDO

C

L

= 20 pF

Z

0

= 50

Ω

GND

0.9V

50

Ω

1.8V

0V

ALL INPUT PULSES

0.9V

Test Clock

Test Mode Select

TCK

TMS

Test Data In
TDI

Test Data Out

t

TCYC

t

TMSH

t

TMSS

t

TDIS

t

TDIH

t

TDOV

t

TDOX

TDO

Notes

15.t

CS

and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.

16.Test conditions are specified using the load in TAP AC Test Conditions. t

R/tF

= 1 ns.

Over the Operating Range

Parameter Description Min Max Unit

t

TCYC

t

TF

t

TH

t

TL

TCK Clock Cycle Time 50 ns
TCK Clock Frequency 20 MHz
TCK Clock HIGH 20 ns
TCK Clock LOW 20 ns

Setup Times

t

TMSS

t

TDIS

t

CS

TMS Setup to TCK Clock Rise 5 ns
TDI Setup to TCK Clock Rise 5 ns
Capture Setup to TCK Rise 5 ns

Hold Times

t

TMSH

t

TDIH

t

CH

TMS Hold after TCK Clock Rise 5 ns
TDI Hold after Clock Rise 5 ns
Capture Hold after Clock Rise 5 ns

Output Times

t

TDOV

t

TDOX

TCK Clock LOW to TDO Valid 10 ns
TCK Clock LOW to TDO Invalid 0 ns

[15, 16]

TAP Timing and Test Conditions

Figure 2 shows the TAP timing and test conditions.

Figure 2. TAP Timing and Test Conditions

[16]

Document Number: 38-05363 Rev. *F Page 17 of 32

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CY7C1513V18, CY7C1515V18

Identification Register Definitions

Instruction Field

Revision Number
(31:29)

Cypress Device ID
(28:12)

Cypress JEDEC ID
(11:1)

ID Register
Presence (0)

CY7C1511V18 CY7C1526V18 CY7C1513V18 CY7C1515V18

000 000 000 000 Version number.

11010011011000100 1 1010011011001 100 1101001101 1010100 11010011011100100 Defines the type of

00000110100 00000110100 00000110100 00000110100 Allows unique

1111Indicates the

Value

Description

SRAM.

identification of
SRAM vendor.

presence of an ID
register.

Scan Register Sizes

Register Name Bit Size

Instruction 3
Bypass 1
ID 32
Boundary Scan 109

Instruction Codes

Instruction Code Description

EXTEST 000 Captures the input and output ring contents.
IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO.

This operation does not affect SRAM operation.

SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and

TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED 011 Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI

RESERVED 101 Do Not Use: This instruction is reserved for future use.
RESERVED 110 Do Not Use: This instruction is reserved for future use.
BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM

and TDO. Does not affect the SRAM operation.

operation.

Document Number: 38-05363 Rev. *F Page 18 of 32

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CY7C1513V18, CY7C1515V18

Boundary Scan Order

Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID

0 6R 28 10G 56 6A 84 1J
16P299G575B852J
2 6N 30 11F 58 5A 86 3K
3 7P 31 11G 59 4A 87 3J
47N329F605C882K
5 7R 33 10F 61 4B 89 1K
6 8R 34 11E 62 3A 90 2L
7 8P 35 10E 63 2A 91 3L
8 9R 36 10D 64 1A 92 1M

9 11P 37 9E 65 2B 93 1L
10 10P 38 10C 66 3B 94 3N
11 10N 39 11D 67 1C 95 3M
12 9P 40 9C 68 1B 96 1N
13 10M 41 9D 69 3D 97 2M
14 11N 42 11B 70 3C 98 3P
15 9M 43 11C 71 1D 99 2N
16 9N 44 9B 72 2C 100 2P
17 11L 45 10B 73 3E 101 1P
18 11M 46 11A 74 2D 102 3R
19 9L 47 10A 75 2E 103 4R
20 10L 48 9A 76 1E 104 4P
21 11K 49 8B 77 2F 105 5P
22 10K 50 7C 78 3F 106 5N
23 9J 51 6C 79 1G 107 5R
24 9K 52 8A 80 1F 108 Internal
25 10J 53 7A 81 3G
26 11J 54 7B 82 2G
27 11H 55 6B 83 1H

Document Number: 38-05363 Rev. *F Page 19 of 32

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Power Up Sequence in QDR-II SRAM

~

~

QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.

Power Up Sequence

■ Apply power and drive DOFF either HIGH or LOW (All other

inputs can be HIGH or LOW).

❐ Apply V
❐ Apply V
❐ Drive DOFF HIGH.

■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024

cycles to lock the DLL.

before V

DD
DDQ

K

before V

.

DDQ

or at the same time as V

REF

.

REF

Figure 3. Power Up Waveforms

DLL Constraints

■ DLL uses K clock as its synchronizing input. The input must

have low phase jitter, which is specified as t

■ The DLL functions at frequencies down to 120 MHz.

■ If the input clock is unstable and the DLL is enabled, then the

DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. T o avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.

~

KC Var

.

K

~

Unstable Clock

> 1024 Stable clock

Start Normal
Operation

/

Clock Start

/

V

V

DDQDD

(Clock Starts after Stable)

/

V

V

DDQDD

DOFF

V

V

DD

DDQ

Stable (< +/- 0.1V DC per 50ns )

Fix High (or tie to V

DDQ

)

Document Number: 38-05363 Rev. *F Page 20 of 32

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Maximum Ratings

Notes

17.Power up: Assumes a linear ramp from 0V to V

DD

(min) within 200 ms. During this time V

IH

< V

DD

and V

DDQ

< VDD.

18.Output are impedance controlled. IOH = −(V

DDQ

/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

19.Output are impedance controlled. I

OL

= (V

DDQ

/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

20.V

REF

(min) = 0.68V or 0.46V

DDQ

, whichever is larger, V

REF

(max) = 0.95V or 0.54V

DDQ

, whichever is smaller.

21.The operation current is calculated with 50% read cycle and 50% write cycle.

Exceeding maximum ratings may impair the useful life of th e
device. These user guidelines are not tested.

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND........–0.5V to +2.9V

Supply Voltage on V

DC Applied to Outputs in High-Z ........–0.5V to V

DC Input Voltage

Relative to GND.......–0.5V to +V

DDQ

[13]

..............................–0.5V to VDD + 0.3V

DDQ

DD

+ 0.3V

Electrical Characteristics

Current into Outputs (LOW) ........................................20 mA

Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V

Latch-up Current ................................................... > 200 mA

Operating Range

Range

Temperature (TA) V

Commercial 0°C to +70°C 1.8 ± 0.1V 1.4V to
Industrial –40°C to +85°C

Ambient

DD

[17]

V

DDQ

V

DD

[17]

DC Electrical Characteristics

Over the Operating Range

[14]

Parameter Description Test Conditions Min Typ Max Unit

V

DD

V

DDQ

V

OH

V

OL

V

OH(LOW)

V

OL(LOW)

V

IH

V

IL

I

X

I

OZ

V

REF

[21]

I

DD

Power Supply Voltage 1.7 1.8 1.9 V
IO Supply Voltage 1.4 1.5 V
Output HIGH Voltage Note 18 V
Output LOW Voltage Note 19 V
Output HIGH Voltage I

= −0.1 mA, Nominal Impedance V

OH

Output LOW Voltage IOL = 0.1 mA, Nominal Impedance V
Input HIGH Voltage V

/2 – 0.12 V

DDQ

/2 – 0.12 V

DDQ

– 0.2 V

DDQ

SS

+ 0.1 V

REF

Input LOW Voltage –0.3 V
Input Leakage Current GND ≤ VI ≤ V
Output Leakage Current GND ≤ VI ≤ V
Input Reference Voltage
VDD Operating Supply V

[20]

Typical Value = 0.75V 0.68 0.75 0.95 V

= Max,

DD

I

= 0 mA,

OUT

f = f

MAX

= 1/t

DDQ

Output Disabled −5 5 μA

DDQ,

300MHz (x8) 930 mA

(x9) 940

CYC

(x18) 1020

−5 5 μA

DD

/2 + 0.12 V

DDQ

/2 + 0.12 V

DDQ

DDQ

0.2 V
+ 0.3 V

DDQ

– 0.1 V

REF

(x36) 1230

278MHz (x8) 865 mA

(x9) 870
(x18) 950
(x36) 1140

250MHz (x8) 790 mA

(x9) 795
(x18) 865
(x36) 1040

V

V

Document Number: 38-05363 Rev. *F Page 21 of 32

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Electrical Characteristics (continued)

DC Electrical Characteristics

Over the Operating Range

[14]

Parameter Description Test Conditions Min Typ Max Unit

[21]

I

DD

VDD Operating Supply V

DD

I

OUT

f = f

= Max,

= 0 mA,

= 1/t

MAX

CYC

200MHz (x8) 655 mA

(x9) 660
(x18) 715
(x36) 850

167MHz (x8) 570 mA

(x9) 575
(x18) 615
(x36) 725

I

SB1

Automatic Power down
Current

Max VDD,
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = f
Static

MAX

= 1/t

CYC,

Inputs

300MHz (x8) 400 mA

(x9) 400
(x18) 400
(x36) 400

278MHz (x8) 390 mA

(x9) 390
(x18) 390
(x36) 390

250MHz (x8) 380 mA

(x9) 380
(x18) 380
(x36) 380

200MHz (x8) 360 mA

(x9) 360
(x18) 360
(x36) 360

167MHz (x8) 340 mA

(x9) 340
(x18) 340
(x36) 340

AC Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions Min Typ Max Unit

V

IH

V

IL

Input HIGH Voltage V
Input LOW Voltage – – V

Document Number: 38-05363 Rev. *F Page 22 of 32

[13]

+ 0.2 – – V

REF

– 0.2 V

REF

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CY7C1511V18, CY7C1526V18

CY7C1513V18, CY7C1515V18

Capacitance

1.25V

0.25V

R = 50Ω

5pF

INCLUDING

JIG AND

SCOPE

ALL INPUT PULSES

Device

R

L

= 50Ω

Z

0

= 50Ω

V

REF

= 0.75V

V

REF

= 0.75V

[22]

0.75V

Under
Test

0.75V

Device
Under
Test

OUTPUT

0.75V

V

REF

V

REF

OUTPUT

ZQ

ZQ

(a)

Slew Rate = 2 V/ns

RQ =
250

Ω

(b)

RQ =
250

Ω

Note

22.Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V

DDQ

= 1.5V, input

pulse levels of 0.25V to 1.25V, and output loading of the specified I

OL/IOH

and load capacitance shown in (a) of AC Test Loads and Waveforms.

Tested initia lly and after any design or process change that may affect these parameters.

Parameter Description Test Conditions Max Unit

C

Input Capacitance TA = 25°C, f = 1 MHz, VDD = 1.8V, V

IN

C

CLK

C

O

Clock Input Capacitance 8.5 pF
Output Capacitance 6pF

= 1.5V 5.5 pF

DDQ

Thermal Resistance

Tested initia lly and after any design or process change that may affect these parameters.

Parameter Description Test Conditions

Θ

JA

Θ

JC

Thermal Resistance
(Junction to Ambient)

Thermal Resistance
(Junction to Case)

Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.

Figure 4. AC Test Loads and Waveforms

165 FBGA

Package

16.3 °C/W

2.1 °C/W

Unit

Document Number: 38-05363 Rev. *F Page 23 of 32

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Switching Characteristics

Notes

23.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires th e input timings of the freque ncy range in which it is being
operated and outputs data with the output timings of that fre quency range.

24.This part has a voltage regulator internally; t

POWER

is the time that the power must be supplied above VDD minimum initially before a read or write operation can be

initiated.

25.For D0 data signal on CY7C1526V18 device, t

SD

is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies.

Over the Operating Range

[22, 23]

Cypress

Parameter

t

POWER

t

CYC

t

KH

t

KL

t

KHKH

t

KHCH

Setup Times

t

SA

t

SC

t

SCDDR

[25]

t

SD

Hold Times

t

HA

t

HC

Consortium

Parameter

t

KHKH

t

KHKL

t

KLKH

t

KHKH

t

KHCH

t

AVKH

t

IVKH

t

IVKH

t

DVKH

t

KHAX

t

KHIX

Description

Unit

Min Max Min Max Min Max Min Max Min Max

300 MHz 278 MHz 250 MHz 200 MHz 167 MHz

VDD(Typical) to the First Access

[24]

11111ms

K Clock and C Clock Cycle Time 3.3 8.4 3.6 8.4 4.0 8.4 5.0 8.4 6.0 8.4 ns
Input Clock (K/K; C/C) HIGH
Input Clock (K/K; C/C) LOW

K Clock Rise to K Clock Rise and C
to C

Rise (rising edge to rising edge)

K/K Clock Rise to C/C Clock Rise

1.32 – 1.4 – 1.6 – 2.0 – 2.4 – ns

1.32 – 1.4 – 1.6 – 2.0 – 2.4 – ns

1.49 – 1.6 – 1.8 – 2.2 – 2.7 – ns

01.4501.5501.802.202.7ns

(rising edge to rising edge)

Address Setup to K Clock Rise 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns
Control Setup to K Clock Rise

, WPS)

(RPS
Double Data Rate Control Setup to

Clock (K/K
(BWS

D

[X:0]

) Rise

, BWS1, BWS2, BWS3)

0

Setup to Clock (K/K) Rise

Address Hold after K Clock Rise
Control Hold after K Clock Rise

, WPS)

(RPS

0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns

0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns

t

HCDDR

t

HD

Document Number: 38-05363 Rev. *F Page 24 of 32

t

KHIX

t

KHDX

Double Data Rate Control Hold after
Clock (K/K
(BWS

D

[X:0]

) Rise

, BWS1, BWS2, BWS3)

0

Hold after Clock (K/K) Rise

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

[+] Feedback

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CY7C1513V18, CY7C1515V18

Switching Characteristics (continued)

Notes

26.t

CHZ

, t

CLZ

, are specified with a load capacitance of 5 pF as in ( b) of AC T est Loads and W aveforms on page 23. Tran sition is measured ± 100 mV from steady-state volt age.

27.At any voltage and temperature t

CHZ

is less than t

CLZ

and t

CHZ

less than tCO.

Over the Operating Range

[22, 23]

Cypress

Parameter

Consortium

Parameter

Output Times

t

CO

t

DOH

t

CCQO

t

CQOH

t

CQD

t

CQDOHtCQHQX

t

CHZ

t

CLZ

t

CHQV

t

CHQX

t

CHCQV

t

CHCQX

t

CQHQV

t

CHQZ

t

CHQX1

DLL Timing

t

KC Var

t

KC lock

t

KC ResettKC Reset

t

KC Var

t

KC lock

Description

Unit

Min Max Min Max Min Max Min Max Min Max

300 MHz 278 MHz 250 MHz 200 MHz 167 MHz

C/C Clock Rise (or K/K in single

– 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns

clock mode) to Data Valid
Data Output Hold after Output C/C

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Clock Rise (Active to Active)
C/C Clock Rise to Echo Clock Valid
Echo Clock Hold after C/C Clock

– 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Rise
Echo Clock High to Data Valid 0.27 0.27 0.30 0.35 0.40 ns
Echo Clock High to Data Invalid –0.27 – –0.27 – –0.30 – –0.35 – –0.40 – ns

Clock (C/C) Rise to High-Z
(Active to High-Z)

[26, 27]

Clock (C/C) Rise to Low-Z

[26, 27]

– 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Clock Phase Jitter – 0.20 – 0.20 – 0.20 – 0.20 – 0.20 ns
DLL Lock Time (K, C) 1024 – 1024 – 1024 – 1024 – 1024 – Cycles
K Static to DLL Reset 30 30 30 30 30 ns

Document Number: 38-05363 Rev. *F Page 25 of 32

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Switching Waveforms

Notes

28.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

29.Outputs are disabled (High-Z) one clock cycle after a NOP.

30.In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwar ded immediately as read results. This note
applies to the whole diagram.

Figure 5. Read/Write/Deselect Sequence

[28, 29, 30]

RPS

WPS

NOP

1

READ

2

READWRITE WRITE

345

NOP

6

7

K

t

KH

t

KL

t

CYC

t

KHKH

K

t

t

A

t

D

Q

t

KHCH

HC

SC

A0 A1

t

SA

HA

t

KHCH

t

CLZ

tt

A2

t

HD

t

SD

D10 D11

Q00

Q01 Q02

t

CO

t

DOH

A3

t

SD

D12

HCSC

t

HD

Q03

t

CQDOH

D30 D31

Q20

Q21

t

CQD

D32

Q22

t

D33

Q23

CHZ

D13

C

t

CYC

t

KHKH

t

KH

t

KL

C

t

t

CQOH

CCQO

CQ

t

t

CQOH

CCQO

CQ

DON’T CARE UNDEFINED

Document Number: 38-05363 Rev. *F Page 26 of 32

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Ordering Information

Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

300 CY7C1511V18-300BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial

CY7C1526V18-300BZC
CY7C1513V18-300BZC
CY7C1515V18-300BZC
CY7C1511V18-300BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-300BZXC
CY7C1513V18-300BZXC
CY7C1515V18-300BZXC
CY7C1511V18-300BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial
CY7C1526V18-300BZI
CY7C1513V18-300BZI
CY7C1515V18-300BZI
CY7C1511V18-300BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-300BZXI
CY7C1513V18-300BZXI
CY7C1515V18-300BZXI

278 CY7C1511V18-278BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial

CY7C1526V18-278BZC
CY7C1513V18-278BZC
CY7C1515V18-278BZC
CY7C1511V18-278BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-278BZXC
CY7C1513V18-278BZXC
CY7C1515V18-278BZXC
CY7C1511V18-278BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial
CY7C1526V18-278BZI
CY7C1513V18-278BZI
CY7C1515V18-278BZI
CY7C1511V18-278BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-278BZXI
CY7C1513V18-278BZXI
CY7C1515V18-278BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05363 Rev. *F Page 27 of 32

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Ordering Information (continued)

Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

250 CY7C1511V18-250BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial

CY7C1526V18-250BZC
CY7C1513V18-250BZC
CY7C1515V18-250BZC
CY7C1511V18-250BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-250BZXC
CY7C1513V18-250BZXC
CY7C1515V18-250BZXC
CY7C1511V18-250BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial
CY7C1526V18-250BZI
CY7C1513V18-250BZI
CY7C1515V18-250BZI
CY7C1511V18-250BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-250BZXI
CY7C1513V18-250BZXI
CY7C1515V18-250BZXI

200 CY7C1511V18-200BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial

CY7C1526V18-200BZC
CY7C1513V18-200BZC
CY7C1515V18-200BZC
CY7C1511V18-200BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-200BZXC
CY7C1513V18-200BZXC
CY7C1515V18-200BZXC
CY7C1511V18-200BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial
CY7C1526V18-200BZI
CY7C1513V18-200BZI
CY7C1515V18-200BZI
CY7C1511V18-200BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-200BZXI
CY7C1513V18-200BZXI
CY7C1515V18-200BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05363 Rev. *F Page 28 of 32

[+] Feedback

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CY7C1513V18, CY7C1515V18

Ordering Information (continued)

Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

167 CY7C1511V18-167BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial

CY7C1526V18-167BZC
CY7C1513V18-167BZC
CY7C1515V18-167BZC
CY7C1511V18-167BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-167BZXC
CY7C1513V18-167BZXC
CY7C1515V18-167BZXC
CY7C1511V18-167BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial
CY7C1526V18-167BZI
CY7C1513V18-167BZI
CY7C1515V18-167BZI
CY7C1511V18-167BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1526V18-167BZXI
CY7C1513V18-167BZXI
CY7C1515V18-167BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05363 Rev. *F Page 29 of 32

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Package Diagram

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51-85195-*A

Figure 6. 165-ball FBGA (15 x 17 x 1.4 mm), 51-85195

Document Number: 38-05363 Rev. *F Page 30 of 32

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CY7C1513V18, CY7C1515V18

Document History Page

Document Title: CY7C1511V18/CY7C1526V18/CY7C1513V18/CY7C1515V18, 72-Mbit QDR™-II SRAM 4-Word Burst Archi­tecture
Document Number: 38-05363

REV. ECN NO.

SUBMISSION

DATE

** 226981 See ECN DIM New Data Sheet

*A 257089 See ECN NJY Modified JT AG ID code for x9 option in the ID register definition on page 20 of

*B 319496 See ECN SYT Removed CY7C1526V18 from the title

*C 403231 See ECN NXR Converted from Preliminary to Final

*D 467290 See ECN NXR Modified the ZQ Definition from Alternately, this pin can be connected directly

ORIG. OF
CHANGE

DESCRIPTION OF CHANGE

the data sheet
Included thermal values
Modified capacitance values table: included capacitance values for x8, x18
and x36 options

Included 300-MHz Speed Bin
Added footnote #1 and accordingly edited the V
the Pin Definitions table

/144M And VSS/288M on

SS

Added Industrial temperature grade
Replaced TBDs for I
MHz speed grades

DD

and I

for 300 MHz, 250 MHz, 200 MHz and 167

SB1

Changed the CIN from 5 pF to 5.5 pF and CO from 7 pF to 8 pF in the
Capacitance Table
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 17
Removed the capacitance value column for the x9 option from Capacitance
Table
Added lead-free product information
Updated the Ordering Information by Shading and unshading as per avail­ability

Added CY7C1526V18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”

Changed C/C

Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #16, 17, 18 on page# 19
Changed the description of I
Current

from Input Load Current to Input Leakage

X

on page# 20
Modified the I
Modified test condition in Footnote #19 on page # 20 from V

< V

V

DDQ

Replaced Package Name column with Package Diagram in the Ordering

and ISB values

DD

DD

DDQ

< VDD to

Information table
Updated Ordering Information Table

to Alternately, this pin can be connected directly to V

to V

DD

Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
changed t
t

from 20 ns to 10 ns in TAP AC Switching Characteristics table

TDOV

Modified Power-Up waveform

from 100 ns to 50 ns, changed t

TCYC

, t

TMSS

TDIS

, tCS, t

TMSH

, t

TDIH

, t

from 10 ns to 5 ns and changed

CH

TH

DDQ

and t

DDQ

Relative to GND

to V

DDQ

from 40 ns to 20 ns,

TL

DD

Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Updated the Typo in the AC Switching Characteristics Table
Updated the Ordering Information Table

Document Number: 38-05363 Rev. *F Page 31 of 32

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Document History Page

Document Title: CY7C1511V18/CY7C1526V18/CY7C1513V18/CY7C1515V18, 72-Mbit QDR™-II SRAM 4-Word Burst Archi­tecture
Document Number: 38-05363

*E 2511080 See ECN VKN/AESA Updated Logic Block diagram

Updated Power-up sequence waveform and it’s description
Updated I
Added footnote #21 related to I
Changed Θ
Changed DLL minimum operating frequency from 80MHz to 120MHz
Changed t
Modified footnotes 23 and 30

specs

DD/ISB

spec from 16.2 to 16.3, Changed Θ

JA

max spec to 8.4ns for all speed bins

CYC

DD

spec from 2.3 to 2.1

JC

*F 2549270 08/06/08 PYRS Publish in External Web

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© Cypress Semiconductor Corporation, 2004-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
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assume any liability arising out of the ap plicati on or u se o f any pr oduct o r circui t descri bed h erein. Cypr ess does not aut horize it s product s for use a s critical compo nent s in life-support systems whe re
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Use may be limited by and subject to the applicable Cypress software license agreement.

Document Number: 38-05363 Rev. *F Revised August 06, 2008 Page 32 of 32

QDR RAMs and Quad Data Rate RA M s com pr i se a ne w fam i ly of pr od ucts developed by Cypress, Hitachi , IDT, NEC, and Samsung. All product and comp an y name s ment ione d in this d ocume nt a re
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