Cypress Semiconductor CY7C1336H Specification Sheet

PRELIMINARY

s

A

Logic Block Di

CY7C1336H

2-Mbit (64K x 32) Flow-Through Sync SRAM

Features

• 64K x 32 common I/O

• 3.3V core power supply

• 3.3V I/O supply

• Fast clock-to-output times

• Provide high-performance 2-1-1-1 access rate

• User-selectable burst counter supporting Intel

• Separate processor and controller address strobes

• Synchronous self-timed write

• Asynchronous output enable

• Supports 3.3V I/O level

• Offered in JEDEC-standard lead-free 100-pin TQFP

• “ZZ” Sleep Mode option

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

— 6.5 ns (133-MHz version)
— 8.0 ns (100-MHz version)

Pentium

®

interleaved or linear burst sequences

package

agram

0, A1, A

MODE

ADV

CLK

ADSC
ADSP

BW

D

BW

C

BW

B

BW

A

BWE

GW
CE1

CE2
CE3

OE

ZZ

SLEEP

CONTROL

DQ

D

BYTE

BYTE

WRITE REGISTER

WRITE REGISTER

DQ

C

BYTE

WRITE REGISTER

DQ

B

BYTE

WRITE REGISTER

DQ

A

BYTE

WRITE REGISTER

ENABLE

REGISTER

ADDRESS
REGISTER

BURST

COUNTER

AND LOGIC

CLR

Functional Description

[1]

The CY7C1336H is a 64K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is

6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati­cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-trigg ered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE

), depth-expansion Chip Enables (CE2 and CE3), Burst

1

®

Control inputs (ADSC
(BW
inputs include the Output Enable (OE) and the ZZ pin.

, and BWE), and Global Write (GW). Asynchronous

[A:D]

, ADSP,

ADV), Write Enables

and

The CY7C1336H allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP
Address Strobe (ADSC

) inputs. Address advancement is

) or the cache Controller

controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of

clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC

) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV

).

The CY7C1336H operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.

A

[1:0]

Q1

Q0

DQ

D

BYTE

WRITE REGISTER

DQ

C

BYTE

WRITE REGISTER

DQ

B

BYTE

WRITE REGISTER

A

DQ

BYTE

WRITE REGISTER

MEMORY

ARRAY

SENSE
AMPS

OUTPUT
BUFFERS

INPUT

REGISTERS

DQ

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-00210 Rev. *A Revised February 6, 2006

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PRELIMINARY

CY7C1336H

Selection Guide

133 MHz 100 MHz Unit

Maximum Access Time 6.5 8.0 ns
Maximum Operating Current 225 205 mA
Maximum Standby Current

40 40 mA

Pin Configuration

100-pin TQFP Pinout

BYTE C

BYTE D

V
V

V
V

V
V

V
V

DQ
DQ

DDQ
SSQ

DQ
DQ
DQ
DQ

SSQ
DDQ

DQ
DQ

V
NC

V
DQ
DQ

DDQ

SSQ

DQ
DQ
DQ
DQ

SSQ

DDQ

DQ
DQ

NC

NC

DD

SS

NC

A

100

CE

CE1

99989796959493929190898887868584838281

2BWDBWC

A

1
2

C

3

C

4
5
6

C

7

C

8

C

9

C

10
11
12

C

13

C

14
15
16
17
18

D

19

D

20
21
22

D

23

D

24

D

25

D

26
27
28

D

29

D

30

3

A

CE

BWBBW

VDDV

CY7C1336H

SS

CLK

GW

BWE

OE

ADSC

ADSP

ADV

A

A

80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51

NC
DQ

DQ
V
V
DQ
DQ
DQ
DQ
V
V
DQ
DQ
V
NC
V

ZZ
DQ

DQ
V
V
DQ
DQ
DQ
DQ
V
V
DQ
DQ
NC

B

B
DDQ
SSQ

B

B

B

B
SSQ
DDQ

B

B
SS

DD

A

A
DDQ
SSQ

A

A

A

A
SSQ
DDQ

A

A

BYTE B

BYTE A

31323334353637383940414243444546474849

AAAAA1A

MODE

Document #: 001-00210 Rev. *A Page 2 of 15

50

0

NC/72M

NC/36M

SS

DD

V

V

NC/18M

NC/9M

AAAAA

A

NC/4M

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PRELIMINARY

CY7C1336H

Pin Definitions

Name I/O Description

A0, A1,
A

BWA,
BW

B

BWC,
BW

D

GW Input-

BWE Input-

CLK Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst

CE

1

CE

2

CE

3

OE Input-

ADV Input-

ADSP Input-

ADSC Input-

ZZ Input-

DQs I/O-

V

DD

V

SS

V

DDQ

V

SSQ

MODE Input-

NC No Connects. Not Internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and 1G are

Input-

Synchronous

Address Inputs used to select one of the 64K address locations. Sampled at the rising edge of the
CLK if ADSP

or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A

counter.

Input-

Synchronous

Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM.
Sampled on the rising edge of CLK.

Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global

Synchronous

Write is conducted (ALL bytes are written, regardless of the values on BW
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be

Synchronous

Input-

Synchronous

Input-

Synchronous

Input-

Synchronous

asserted LOW to conduct a Byte Write.

counter when ADV

is asserted LOW, during a burst operation.

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2
and CE
new external address is loaded.

to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a

3

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1
and CE

to select/deselect the device. CE

3

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE
and CE2 to select/deselect the device. CE3 is sampled only when a new external address is loaded.

Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW,

Asynchronous

the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data
pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state.

Advance Input signal, sampled on the rising edge of CL K. When asserted, it automatically incre-

Synchronous

ments the address in a burst cycle.
Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted

Synchronous

LOW, addresses presented to the device are captured in the address registers. A
into the burst counter. When ADSP
ignored when CE

is deasserted HIGH

1

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When ass erted

Synchronous

LOW, addresses presented to the device are captured in the address registers. A
into the burst counter. When ADSP

ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical “sleep”

Asynchronous

condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating.
ZZ pin has an internal pull-down.

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the

Synchronous

rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the
addresses presented during the previous clock rise of the Read cycle. The direction of the pins is
controlled by OE

. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed

in a tri-state condition.

Power

Power supply inputs to the core of the device.

Supply

Ground Ground for the core of the device.

I/O Power

Power supply for the I/O circuitry.

Supply

I/O Ground Ground for the I/O circuitry.

Selects Burst Order . When tied to GND selects linear burst sequence. When tied to VDD or left floating

Static

selects interleaved burst sequence. This is a strap pin and should remain static during device operation.
Mode Pin has an internal pull-up.

address expansion pins and are not internally connected to the die.

feed the 2-bit

[1:0]

and BWE).

[A:D]

is sampled only when a new external address is loaded.

2

are also loaded

and ADSC are both asserted, only ADSP is recognized. ASDP is

and ADSC are both asserted, only ADSP is recognized.

[1:0]

are also loaded

[1:0]

1

Document #: 001-00210 Rev. *A Page 3 of 15

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PRELIMINARY

CY7C1336H

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access d elay from
the clock rise (t

The CY7C1336H supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486™
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is
user-selectable, and is determined by sampling the MODE
input. Accesses can be initiated with either the Processor
Address Strobe (ADSP

). Address advancement through the burst sequence is

(ADSC
controlled by the ADV
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.

Byte Write operations are qualified with the Byte Write Enable
(BW

) and Byte Write Select (BW

E

Enable (GW
all four bytes. All Writes are simplified with on-chip
synchronous self-timed write circuitry.

Three synchronous Chip Selects (CE
asynchronous Output Enable (OE
selection and output tri-state control. ADSP
is HIGH.

Single Read Accesses

A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE
asserted active, and (2) ADSP
the access is initiated by ADSC
deasserted during this first cycle). The address presented to
the address inputs is latched into the address register and the
burst counter/control logic and presented to the memory core.
If the OE input is asserted LOW, the requested data will be
available at the data outputs a maximum to t
rise. ADSP

is ignored if CE1 is HIGH.

Single Write Accesses Initiated by ADSP

This access is initiated when the following conditions are
satisfied at clock rise: (1) CE
active, and (2) ADSP
presented are loaded into the address register and the burst
inputs (GW

, BWE, and BW
clock cycle. If the Write inputs are asserted active (see Write
Cycle Descriptions table for appropriate states that indicate a
Write) on the next clock rise, the appropriate data will be
latched and written into the device. Byte Writes are allowed.
During Byte Writes, BW
DQ

, BWC controls DQC, and BWD controls DQD. All I/Os are

B

tri-stated during a Byte Write. Since this is a common I/O
device, the asynchronous OE
and the I/Os must be tri-stated prior to the presentation of data
to DQs. As a safety precaution, the data lines are tri -stated
once a Write cycle is detected, regardless of the state of OE

Single Write Accesses Initiated by ADSC

This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE
active, (2) ADSC
HIGH, and (4) the Write input signals (GW

) is 6.5 ns (133-MHz device).

CDV

) or the Controller Address Strobe

input. A two-bit on-chip wraparound

) inputs. A Global Write

) overrides all Byte Write inputs and writes data to

[A:D]

, CE2, CE3) and an

1

) provide for easy bank

is ignored if CE

, CE2, and CE3 are all

1

or ADSC is asserted LOW (if

, the write inputs must be

after clock

CDV

, CE2, CE3 are all asserted

1

is asserted LOW. The addresses

) are ignored during this first

[A:D]

controls DQA and BWB controls

A

input signal must be deasserted

, CE2, and CE3 are all asserted

is asserted LOW, (3) ADSP is deasserted

1

, BWE, and BW

[A:D]

indicate a write access. ADSC

is ignored if ADSP is active

LOW.
The addresses presented are loaded into the address register

and the burst counter/control logic and delivered to the
memory core. The information presented to DQ
written into the specified address location. Byte Writes are
allowed. During Byte Writes, BW

, BWC controls DQC, and BWD controls DQD. All I/Os are

DQ

B

tri-stated when a Write is detected, even a Byte Write. Since

controls DQA, BWB controls

A

this is a common I/O device, the asynchronous OE
must be deasserted and the I/Os must be tri-stated prior to the
presentation of data to DQs. As a safety precaution, the data
lines are tri-stated once a Write cycle is detected, regardless
of the state of OE.

Burst Sequences

The CY7C1336H provides an on-chip two-bit wraparound
burst counter inside the SRAM. The burst counter is fed by
A

, and can follow either a linear or interleaved burst order.

[1:0]

The burst order is determined by the state of the MODE input.
A LOW on MODE will select a linear burst sequence. A HIGH
on MODE will select an interleaved burst order. Leaving
MODE unconnected will cause the device to default to a inter­leaved burst sequence.

Sleep Mode

1

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE
inactive for the duration of t
LOW.

s, ADSP, and ADSC must remain

after the ZZ input returns

ZZREC

Interleaved Burst Address Table
(MODE = Floating or V

First

Address

A1, A0

00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00

Second

Address

A1, A0

DD

)

Third

Address

A1, A0

Linear Burst Address Table (MODE = GND)

First

Address

A1, A

0

00 01 10 11

.

01 10 11 00
10 11 00 01
11 00 01 10

)

Second

Address

A1, A

0

Third

Address

A1, A

0

will be

[D:A]

input signal

Fourth

Address

A1, A0

Fourth

Address

A1, A

0

Document #: 001-00210 Rev. *A Page 4 of 15

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PRELIMINARY

CY7C1336H

ZZ Mode Electrical Characteristics

Parameter Description T est Conditions Min. Max. Unit

I

DDZZ

t

ZZS

t

ZZREC

t

ZZI

t

RZZI

Truth Table

Sleep mode standby current ZZ > VDD – 0.2V 40 mA
Device operation to ZZ ZZ > VDD – 0.2V 2t
ZZ recovery time ZZ < 0.2V 2t

CYC

ZZ Active to sleep current This parameter is sampled 2t

CYC

CYC

ZZ Inactive to exit sleep current This parameter is sampled 0 ns

[2, 3, 4, 5, 6]

ns
ns
ns

Cycle Description

Deselected Cycle,

Used CE1CE2CE3ZZ ADSP ADSC ADV WRITE OE CLK DQ

None H X X L X L X X X L-H Tri-State

Power-down

ADDRESS

Deselected Cycle,

None L L X L L X X X X L-H Tri-State

Power-down
Deselected Cycle,

None L X H L L X X X X L-H Tri-State

Power-down
Deselected Cycle,

None L L X L H L X X X L-H Tri-State

Power-down
Deselected Cycle,

None X X X L H L X X X L-H Tri-State

Power-down
Sleep Mode, Power-down None X X X H X X X X X X Tri-State
Read Cycle, Begin Burst External L H L L L X X X L L-H Q
Read Cycle, Begin Burst External L H L L L X X X H L-H Tri-State
Write Cycle, Begin Burst External L H L L H L X L X L-H D
Read Cycle, Begin Burst External L H L L H L X H L L-H Q
Read Cycle, Begin Burst External L H L L H L X H H L-H Tri-State
Read Cycle, Continue Burst Next X X X L H H L H L L-H Q
Read Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State
Read Cycle, Continue Burst Next H X X L X H L H L L-H Q
Read Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State
Write Cycle, Continue Burst Ne x t X X X L H H L L X L-H D
Write Cycle, Continue Burst Ne x t H X X L X H L L X L-H D
Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q
Read Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State
Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q
Read Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State
Write Cycle, Suspend Burst Current X X X L H H H L X L-H D
Write Cycle, Suspend Burst Current H X X L X H H L X L-H D

Notes:

2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.

3. WRITE

4. The DQ pins are controlled by the current cycle and the OE

5. The SRAM always initiates a Read cycle when ADSP

6. OE

= L when any one or more Byte Write Enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals

(BW

, BWB, BWC, BWD), BWE, GW = H.

A

after the ADSP
don't care for the remainder of the Write cycle.

is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Tri-State when OE

is inactive or when the device is deselected, and all data bits behave as output when OE

or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to tri-state. OE is a

signal. OE is asynchronous and is not sampled with the clock.

is asserted, regardless of the state of GW , BWE , or BW

is active (LOW).

. Writes may occur only on subsequent clocks

[A: D]

Document #: 001-00210 Rev. *A Page 5 of 15

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PRELIMINARY

CY7C1336H

Truth Table for Read/Write

Function GW BWE BW

[2, 3]

D

BW

C

BW

B

BW

A

Read HHXXXX
Read HLHHHH
Write Byte (A, DQP
Write Byte (B, DQP
Write Bytes (B, A, DQP
Write Byte (C, DQP
Write Bytes (C, A, DQP
Write Bytes (C, B, DQP
Write Bytes (C, B, A, DQP
Write Byte (D, DQP
Write Bytes (D, A, DQP
Write Bytes (D, B, DQP
Write Bytes (D, B, A, DQP
Write Bytes (D, B, DQP
Write Bytes (D, B, A, DQP
Write Bytes (D, C, A, DQP

) HLHHHL

A

)HLHHLH

B

, DQPB)HLHHLL

A

) HLHLHH

C

, DQPA) HLHLHL

C

, DQPB)HLHLLH

C

, DQPB, DQPA)HLHLLL

C

) HLLHHH

D

, DQPA)HLLHHL

D

, DQPA)HLLHLH

D

, DQPB, DQPA)H L L H L L

D

, DQPB) HLLLHH

D

, DQPC, DQPA)HLLLHL

D

, DQPB, DQPA)HLLLLH

D

Write All Bytes HLLLLL
Write All Bytes L XXXXX

Document #: 001-00210 Rev. *A Page 6 of 15

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PRELIMINARY

CY7C1336H

Maximum Ratings

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied..................................... ........–55°C to +125°C

Supply Voltage on V
DC Voltage Applied to Outputs

in Tri-State........................................ ...–0.5V to V

DC Input Voltage....................................–0.5V to V

Electrical Characteristics

Relative to GND........–0.5V to +4.6V

DD

DDQ

Over the Operating Range

DD

+ 0.5V
+ 0.5V

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage........................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... >200 mA

Operating Range

Range

Temperature

Commercial 0°C to +70°C 3.3V
Industrial –40°C to +85°C

[7, 8]

Ambient

]

V

DD

−5%/+10%

V

DDQ

3.3V –5%
to V

DD

Parameter Description Test Conditions Min. Max. Unit

V

DD

V

DDQ

V

OH

V

OL

V

IH

V

IL

I

X

I

OZ

I

DD

I

SB1

I

SB2

I

SB3

I

SB4

Notes:

7. Overshoot: V

8. T

Power-up

Power Supply Voltage 3.135 3.6 V
I/O Supply Voltage 3.135 3.6 V
Output HIGH Voltage for 3.3V I/O, I
Output LOW Voltage for 3.3V I/O, I

= –4.0 mA 2.4 V

OH

= 8.0 mA 0.4 V

OL

Input HIGH Voltage for 3.3V I/O 2.0 VDD + 0.3V V
Input LOW Voltage
Input Leakage Current

except ZZ and MODE
Input Current of MODE Input = V

Input Current of ZZ Input = V

Output Leakage Current GND ≤ VI ≤ V
V

Operating Supply

DD

Current
Automatic CE Power-Down

Current—TTL Inputs

Automatic CE Power-Down
Current—CMOS Inputs

Automatic CE Power-Down
Current—CMOS Inputs

Automatic CE Power-Down
Current—TTL Inputs

(AC) < VDD +1.5V (Pulse width less than t

IH

: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and V

[7]

for 3.3V I/O –0.3 0.8 V
GND ≤ VI ≤ V

Input = V

Input = V

V

= Max., I

DD

f = f

MAX

SS
DD
SS
DD

= 1/t

DDQ

, Output Disabled –5 5 µA

DDQ

= 0 mA,

OUT

CYC

Max. VDD, Device Deselected,
V

≥ VIH or VIN ≤ VIL, f = f

IN

inputs switching

MAX,

Max. VDD, Device Deselected,
V

≥ VDD – 0.3V or VIN ≤ 0.3V,

IN

f = 0, inputs static
Max. VDD, Device Deselected,

V

IN

f = f

≥ V

– 0.3V or VIN ≤ 0.3V,

DDQ

, inputs switching

MAX

Max. VDD, Device Deselected,
V

≥ V

IN

f = 0, inputs static

– 0.3V or VIN ≤ 0.3V,

DD

/2), undershoot: VIL(AC) > –2V (Pulse width less than t

CYC

7.5-ns cycle, 133 MHz 225 mA
10-ns cycle, 100 MHz 205 mA

7.5-ns cycle, 133 MHz 90 mA
10-ns cycle, 100 MHz 80 mA

All speeds 40 mA

7.5-ns cycle, 133 MHz 75 mA
10-ns cycle, 100 MHz 65 mA

All speeds 45 mA

CYC

< VDD.

DDQ

−55µA

–30 µA

5 µA

–5 µA

30 µA

/2).

Document #: 001-00210 Rev. *A Page 7 of 15

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PRELIMINARY

CY7C1336H

Capacitance

[9]

Parameter Description T est Conditions

C

IN

C

CLK

C

I/O

Thermal Resistance

Input Capacitance TA = 25°C, f = 1 MHz,

V

= 3.3V, V

Clock Input Capacitance 5 pF

DD

Input/Output Capacitance 5 pF

[9]

Parameter Description Test Conditions

Θ

JA

Thermal Resistance

Θ

JC

Thermal Resistance
(Junction to Ambient)

(Junction to Case)

Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51

AC Test Loads and Waveforms

3.3V I/O Test Load

OUTPUT

Z

= 50Ω

0

VL= 1.5V

(a)

R

= 50Ω

L

3.3V

OUTPUT

5pF

INCLUDING

JIG AND

SCOPE

R = 317Ω

R = 351Ω

(b)

DDQ

V

GND

= 3.3V

DDQ

≤ 1 ns

100 TQFP

Max. Unit

100 TQFP

Package Unit

30.32 °C/W

6.85 °C/W

ALL INPUT PULSES

10%

90%

5pF

90%

10%

≤ 1 ns

(c)

Note:

9. Tested initially and after any design or proc ess change that may affect these parameters.

Document #: 001-00210 Rev. *A Page 8 of 15

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PRELIMINARY

CY7C1336H

Switching Characteristics Over the Operating Range

[10, 1 1]

133 MHz 100 MHz

Parameter Description

t

POWER

VDD(Typical) to the First Access

[12]

1 1 ms

Clock

t

CYC

t

CH

t

CL

Clock Cycle Time 7.5 10 ns
Clock HIGH 2.5 4.0 ns
Clock LOW 2.5 4.0 ns

Output Times

t

CDV

t

DOH

t

CLZ

t

CHZ

t

OEV

t

OELZ

t

OEHZ

Data Output Valid after CLK Rise 6.5 8.0 ns
Data Output Hold after CLK Rise 2.0 2.0 ns
Clock to Low-Z
Clock to High-Z

[13, 14, 15]

[13, 14, 15]

0 0 ns

3.5 3.5 ns
OE LOW to Output Valid 3.5 3.5 ns
OE LOW to Output Low-Z
OE HIGH to Output High-Z

[13, 14, 15]

[13, 14, 15]

0 0 ns

3.5 3.5 ns

Set-up Times

t

AS

t

ADS

t

ADVS

t

WES

t

DS

t

CES

Address Set-up before CLK Rise 1.5 2.0 ns
ADSP, ADSC Set-up before CLK Rise 1.5 2.0 ns
ADV Set-up before CLK Rise 1.5 2.0 ns
GW, BWE, BW

Set-up before CLK Rise 1.5 2.0 ns

[A:D]

Data Input Set-up before CLK Rise 1.5 2.0 ns
Chip Enable Set-up 1.5 2.0 ns

Hold Times

t

AH

t

ADH

t

WEH

t

ADVH

t

DH

t

CEH

Notes:

10.Timing reference level is 1.5V when V

11.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

12.This part has a voltage regulator internally; t
can be initiated.

, t

13.t

CHZ

14.At any given voltage and temperature, t
data bus. These specifications do not imply a bus conten tion c ondi tion, b ut reflect p a rameters gu aran tee d over worst case u se r condi tio ns. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.

15.This parameter is sampled and not 100% tested.

Address Hold after CLK Rise 0.5 0.5 ns
ADSP, ADSC Hold after CLK Rise 0.5 0.5 ns
GW, BWE, BW

Hold after CLK Rise 0.5 0.5 ns

[A:D]

ADV Hold after CLK Rise 0.5 0.5 ns
Data Input Hold after CLK Rise 0.5 0.5 ns
Chip Enable Hold after CLK Rise 0.5 0.5 ns

= 3.3V.

DDQ

is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operat ion

POWER

CLZ,tOELZ

, and t

are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

OEHZ

is less than t

OEHZ

OELZ

and t

is less than t

CHZ

to eliminate bus contention between SRAMs when sharing the same

CLZ

UnitMin. Max. Min. Max.

Document #: 001-00210 Rev. *A Page 9 of 15

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Timing Diagrams

G

Read Cycle Timing

[16]

t

CYC

PRELIMINARY

CY7C1336H

CLK

ADSP

ADSC

ADDRESS

W, BWE,BW

[A:D]

CE

ADV

OE

Data Out (Q)

Note:

16.On this diagram, when CE

High-Z

t

t

CL

CH

t

t

ADH

ADS

t

t

ADH

ADS

t

t

AH

AS

t

CES

A1

t

CEH

t

WES

t

WEH

A2

t

ADVS

t

ADVH

Deselect Cycle

ADV suspends burst.

t

CDV

t

DOH

Q(A2) Q(A2 + 1) Q(A2 + 2)

Q(A2) Q(A2 + 1) Q(A2 + 2)Q(A2 + 3)

Burst wraps around
to its initial state

t

CLZ

t

OEV

t

CDV

t

OEHZ

Q(A1)

t

OELZ

Single READ BURST

READ

DON’T CARE

is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

UNDEFINED

t

CHZ

Document #: 001-00210 Rev. *A Page 10 of 15

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Timing Diagrams (continued)

D

Write Cycle Timing

[16, 17]

t

CYC

PRELIMINARY

CY7C1336H

ADSP

ADSC

ADDRESS

BWE,

BW

[A:D]

GW

CLK

CE

t

t

CL

CH

t

t

ADH

ADS

t

t

ADH

ADS

t

t

AH

AS

A1

A2 A3

Byte write signals are ignored for first cycle when
ADSP initiates burst.

t

t

CEH

CES

t

WES

t

WEH

ADSC extends burst.

t

ADS

t

ADH

t

WES

t

ADVS

t

WEH

t

ADVH

ADV

OE

Data in (D)

ata Out (Q)

Note:

17.

Full width Write can be initiated by either GW

High-Z

t

OEHZ

BURST READ BURST WRITE

t

t

DH

DS

D(A1)

D(A2) D(A2 + 1) D(A2 + 1)

Single WRITE

DON’T CARE UNDEFINED

LOW; or by GW HIGH, BWE LOW and BW

ADV suspends burst.

D(A2 + 2)

LOW.

[A:D]

D(A3) D(A3 + 1) D(A3 + 2)D(A2 + 3)

Extended BURST WRITE

Document #: 001-00210 Rev. *A Page 11 of 15

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Timing Diagrams (continued)

t

Read/Write Timing

[16, 18, 19]

CYC

PRELIMINARY

CY7C1336H

CLK

ADSP

ADSC

ADDRESS

BWE, BW[A:D]

CE

ADV

OE

Data In (D)

Data Out (Q)

t

t

CL

CH

t

t

ADH

ADS

t

t

AH

AS

t

CES

A2

t

CEH

A1 A5 A6

High-Z

Q(A1)

Q(A2)

A3 A4

t

OEHZ

t

WES

t

DS

D(A3)

t

WEH

t

DH

t

OELZ

t

CDV

Q(A4) Q(A4+1) Q(A4+2) Q(A4+3)

D(A5) D(A6)

Notes:

18.The data bus (Q) remains in High-Z following a Write cycle unless an ADSP

is HIGH.

19.GW

Document #: 001-00210 Rev. *A Page 12 of 15

Single WRITE

BURST READBack-to-Back READs

DON’T CARE UNDEFINED

, ADSC, or ADV cycle is performed.

Back-to-Back

WRITEs

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Timing Diagrams (continued)

A

CLK

[20, 21]

ZZ Mode Timing

PRELIMINARY

t

ZZ

CY7C1336H

t

ZZREC

I

SUPPLY

LL INPUTS

(except ZZ)

Outputs (Q)

ZZ

t

ZZI

I

DDZZ

High-Z

t

RZZI

DESELECT or READ Only

DON’T CARE

Notes:

20.Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.

21.DQs are in High-Z when exiting ZZ sleep mode.

Document #: 001-00210 Rev. *A Page 13 of 15

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Ordering Information

PRELIMINARY

CY7C1336H

Speed

(MHz) Ordering Code

133

CY7C1336H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial

Package

Diagram Package Type

CY7C1336H-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial

100

CY7C1336H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial
CY7C1336H-100AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial

Please contact your local Cypress sales representative for availability of these part s.

Package Diagram

100-pin TQFP (14 x 20 x 1.4 mm) (51-85050)

16.00±0.20

14.00±0.10

20.00±0.10

22.00±0.20

100

1

30

31 50

81

80

51

0.30±0.08

0.65
TYP.

12°±1°

(8X)

1.40±0.05

0.20 MAX.

Operating

Range

SEE DETAIL

A

1.60 MAX.

GAUGE PLANE

R 0.08 MIN.

0.20 MAX.

0.25

0°-7°

0.60±0.15

1.00 REF.

0° MIN.

0.20 MIN.

R 0.08 MIN.

0.20 MAX.

DETAIL

0.10

51-85050-*B

STAND-OFF

0.05 MIN.

0.15 MAX.

SEATING PLANE

NOTE:

1. JEDEC STD REF MS-026

2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH

MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE

BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH

3. DIMENSIONS IN MILLIMETERS

A

Pentium is a registered trademark, and i486 is a trademark, of Intel Corporation. All product an d company names mentioned in
this document may be the trademarks of their respective holders.

Document #: 001-00210 Rev. *A Page 14 of 15

© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change withou t n oti ce. C ypr ess S emi con duct or Corpo ration assu mes no resp onsib ility for the u se
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

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PRELIMINARY

CY7C1336H

Document History Page

Document Title: CY7C1336H 2-Mbit (64K x 32) Flow-Through Sync SRAM
Document Number: 001-00210

REV. ECN NO. Issue Date

** 347377 See ECN PCI New Data Sheet

*A 428408 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from

Orig. of

Change Description of Change

“3901 North First Street” to “198 Champion Court”
Changed Three-State to Tri-State.
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table.
Modified test condition from V
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Replaced Package Diagram of 51-85050 from *A to *B

IH

< V

DD to VIH

< V

DD

Document #: 001-00210 Rev. *A Page 15 of 15

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