Cypress Semiconductor CY7C1316BV18, CY7C1318BV18, CY7C1320BV18, CY7C1916BV18 Specification Sheet

18-Mbit DDR-II SRAM 2-Word

Burst Architecture

CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18

Features

Functional Description

■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

■ 300 MHz clock for high bandwidth

■ 2-word burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) at 300 MHz

■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Synchronous internally self-timed writes

■ 1.8V core power supply with HSTL inputs and outputs

■ Variable drive HSTL output buffers

■ Expanded HSTL output voltage (1.4V–V

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

DD

)

Configurations

CY7C1316BV18 – 2M x 8
CY7C1916BV18 – 2M x 9
CY7C1318BV18 – 1M x 18
CY7C1320BV18 – 512K x 36

The CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and
CY7C1320BV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a one-bit burst counter. Addresses for read and write are latched
on alternate rising edges of the input (K) clock. Write data is
registered on the rising edges of both K and K
driven on the rising edges of C and C
edge of K and K
is associated with two 8-bit words in the case of CY7C1316BV18
and two 9-bit words in the case of CY7C1916BV18 that burst
sequentially into or out of the device. The burst counter always
starts with a ‘0’ internally in the case of CY7C1316BV18 and
CY7C1916BV18. For CY7C1318BV18 and CY7C1320BV18,
the burst counter takes in the least significant bit of the external
address and bursts two 18-bit words (in the case of
CY7C1318BV18) of two 36-bit words (in the case of
CY7C1320BV18) sequentially into or out of the device.

Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs, D) are tightly matched to the two
output echo clocks CQ/CQ
separately from each individual DDR SRAM in the system
design. Output data clocks (C/C) enable maximum system
clocking and data synchronization flexibility.

All synchronous inputs pass through input registers controlled by
the K or K
registers controlled by the C or C
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.

if C/C are not provided. Each address location

, eliminating the need to capture data

input clocks. All data outputs pass through output

if provided, or on the rising

(or K or K in a single clock

. Read data is

Selection Guide

Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit

Maximum Operating Frequency 300 278 250 200 167 MHz
Maximum Operating Current x8 815 775 705 575 490 mA

x9 820 780 710 580 490 mA
x18 855 805 730 600 510 mA
x36 930 855 775 635 540 mA

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 38-05621 Rev. *D Revised June 2, 2008

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CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18

Logic Block Diagram (CY7C1316BV18)

Write
Reg

Write
Reg

CLK

A

(19:0)

Gen.

K

K

Control

Logic

Address

Register

Read Add. Decode

Read Data Reg.

R/W

Output

Logic

Reg.

Reg.

Reg.

8

16

8

NWS

[1:0]

V

REF

Write Add. Decode

8

20

C

C

8

LD

Control

R/W

DOFF

1M x 8 Array

1M x 8 Array

8

DQ

[7:0]

8

CQ
CQ

Write
Reg

Write
Reg

CLK

A

(19:0)

Gen.

K

K

Control

Logic

Address
Register

Read Add. Decode

Read Data Reg.

R/W

Output

Logic

Reg.

Reg.

Reg.

9

18

9

BWS

[0]

V

REF

Write Add. Decode

9

20

C

C

9

LD

Control

R/W

DOFF

1M x 9 Array

1M x 9 Array

9

DQ

[8:0]

9

CQ
CQ

Logic Block Diagram (CY7C1916BV18)

Document Number: 38-05621 Rev. *D Page 2 of 31

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CY7C1318BV18, CY7C1320BV18

Logic Block Diagram (CY7C1318BV18)

Write
Reg

Write
Reg

CLK

A

(19:0)

Gen.

K

K

Control

Logic

Address

Register

Read Add. Decode

Read Data Reg.

R/W

Output

Logic

Reg.

Reg.

Reg.

18

36

18

BWS

[1:0]

V

REF

Write Add. Decode

18

20

C

C

18

LD

Control

Burst

Logic

A0

A

(19:1)

R/W

DOFF

512K x 18 Array

512K x 18 Array

19

18

DQ

[17:0]

18

CQ
CQ

Write
Reg

Write
Reg

CLK

A

(18:0)

Gen.

K

K

Control

Logic

Address

Register

Read Add. Decode

Read Data Reg.

R/W

Output

Logic

Reg.

Reg.

Reg.

36

72

36

BWS

[3:0]

V

REF

Write Add. Decode

36

19

C

C

36

LD

Control

Burst
Logic

A0

A

(18:1)

R/W

DOFF

256K x 36 Array

256K x 36 Array

18

36

DQ

[35:0]

36

CQ
CQ

Logic Block Diagram (CY7C1320BV18)

Document Number: 38-05621 Rev. *D Page 3 of 31

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CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18

Pin Configuration

Note

1. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.

The pin configuration for CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and CY7C1320BV18 follow.

165-Ball FBGA (13 x 15 x 1.4 mm) Pinout

CY7C1316BV18 (2M x 8)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/72M A R/W NWS

1

B NC NC NC A NC/288M K NWS
C NC NC NC V
D NC NC NC V
E NC NC DQ4 V
F NC NC NC V
G NC NC DQ5 V
H DOFF V

REF

V

DDQ

V

J NC NC NC V
K NC NC NC V
L NC DQ6 NC V
M NC NC NC V
N NC NC NC V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

AAAVSSNC NC NC

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC NC

P NC NC DQ7 A A C A A NC NC NC
R TDO TCK A A A C AAATMSTDI

K NC/144M LD A NC/36M CQ

0

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

ANCNCDQ3

V

SS

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

SS

[1]

NC NC NC
NC NC DQ2
NC NC NC
NC NC NC

V

DDQ

V

REF

NC DQ1 NC
NC NC NC
NC NC DQ0
NC NC NC

ZQ

CY7C1916BV18 (2M x 9)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/72M A R/W NC K NC/144M LD A NC/36M CQ
B NC NC NC A NC/288M K BWS
C NC NC NC V
D NC NC NC V
E NC NC DQ4 V
F NC NC NC V
G NC NC DQ5 V
H DOFF V

REF

V

DDQ

V

J NC NC NC V
K NC NC NC V
L NC DQ6 NC V
M NC NC NC V
N NC NC NC V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

AAAVSSNC NC NC

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC NC

0

ANCNCDQ3

V
V
V
V
V
V
V

V

DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

V

SS

SS

NC NC NC
NC NC DQ2
NC NC NC
NC NC NC

V

DDQ

V

REF

NC DQ1 NC
NC NC NC
NC NC DQ0
NC NC NC

ZQ

P NC NC DQ7 A A C A A NC NC DQ8
R TDO TCK A A A C AAATMSTDI

Document Number: 38-05621 Rev. *D Page 4 of 31

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CY7C1318BV18, CY7C1320BV18

Pin Configuration (continued)

The pin configuration for CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and CY7C1320BV18 follow.

165-Ball FBGA (13 x 15 x 1.4 mm) Pinout

CY7C1318BV18 (1M x 18)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/72M A R/W BWS

1

B NC DQ9 NC A NC/288M K BWS
C NC NC NC V
D NC NC DQ10 V
E NC NC DQ11 V
F NC DQ12 NC V
G NC NC DQ13 V
H DOFF V

REF

V

DDQ

V

J NC NC NC V
K NC NC DQ14 V
L NC DQ15 NC V
M NC NC NC V
N NC NC DQ16 V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

AA0AVSSNC DQ7 NC

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC NC

P NC NC DQ17 A A C A A NC NC DQ0
R TDO TCK A A A C AAATMSTDI

K NC/144M LD A NC/36M CQ

0

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

ANCNCDQ8

V

SS

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

DDQ

V

SS

[1]

NC NC NC
NC NC DQ6
NC NC DQ5
NC NC NC

V

DDQ

V

REF

NC DQ4 NC
NC NC DQ3
NC NC DQ2
NC DQ1 NC

ZQ

CY7C1320BV18 (512K x 36)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/144M NC/36M R/W BWS
B NC DQ27 DQ18 A BWS
C NC NC DQ28 V
D NC DQ29 DQ19 V
E NC NC DQ20 V
F NC DQ30 DQ21 V
G NC DQ31 DQ22 V
H DOFF V

REF

V

DDQ

V

J NC NC DQ32 V
K NC NC DQ23 V
L NC DQ33 DQ24 V
M NC NC DQ34 V
N NC DQ35 DQ25 V

SS

SS
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

SS

SS

AA0AVSSNC DQ17 DQ7

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

AAAVSSNC NC DQ10

2
3

K BWS

LD A NC/72M CQ

1

KBWS0ANCNCDQ8

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V
V
V
V
V
V
V

V

DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ

V

SS

SS

NC NC DQ16
NC DQ15 DQ6
NC NC DQ5
NC NC DQ14

V

DDQ

V

REF

ZQ
NC DQ13 DQ4
NC DQ12 DQ3
NC NC DQ2
NC DQ11 DQ1

P NC NC DQ26 A A C A A NC DQ9 DQ0
R TDO TCK A A A C AAATMSTDI

Document Number: 38-05621 Rev. *D Page 5 of 31

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CY7C1318BV18, CY7C1320BV18

Pin Definitions

Pin Name IO Pin Description

DQ

[x:0]

LD Input-

NWS
NWS

BWS
BWS
BWS
BWS

A, A0 Input-

R/W Input-

C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C

C

K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

K

,

0
1

,

0

,

1

,

2
3

Input Output­Synchronous

Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write
operations. These pins drive out the requested data during a read operation. Valid data is driven out on
the rising edge of both the C and C
When read access is deselected, Q
CY7C1316BV18 − DQ
CY7C1916BV18 − DQ
CY7C1318BV18 − DQ
CY7C1320BV18 − DQ

[7:0]
[8:0]
[17:0]
[35:0]

clocks during read operations or K and K when in single clock mode.

are automatically tri-stated.

[x:0]

Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition

Synchronous

Input-

Synchronous

includes address and read/write direction. All transactions operate on a burst of 2 data.
Nibble Write Select 0, 1 − Active LOW (CY7C1316BV18 only). Sampled on the rising edge of the K

and K

clocks during write operations. Used to select which nibble is written into the device during the
current portion of the write operations. Nibbles not written remain unaltered.
NWS0 controls D

and NWS1 controls D

[3:0]

[7:4]

.

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.

Input-

Synchronous

Byte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during
write operations. Used to select which byte is written into the device during the current portion of the Write
operations. Bytes not written remain unaltered.
CY7C1916BV18 − BWS
CY7C1318BV18 − BWS0 controls D
CY7C1320BV18 − BWS0 controls D

.

D

[35:27]

controls D

0

[8:0]

and BWS1 controls D

[8:0]

, BWS1 controls D

[8:0]

[17:9].

, BWS2 controls D

[17:9]

and BWS3 controls

[26:18]

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.

Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the

Synchronous

device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1316BV18 and 2M x 9 (2 arrays each
of 1M x 9) for CY7C1916BV18, a single 1M x 18 array for CY7C1916BV18, and a single array of 512K x
36 for CY7C1318BV18.

CY7C1316BV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external
address inputs are needed to access the entire memory array.

CY7C1916BV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external
address inputs are needed to access the entire memory array.

CY7C1318BV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.
20 address inputs are needed to access the entire memory array.

CY7C1320BV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.
19 address inputs are needed to access the entire memory array. All the address inputs are ignored when
the appropriate port is deselected.

Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read when

Synchronous

R/W

is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times

around the edge of K.

to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See Application Example on page 9 for more information.

Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See Application Example on page 9 for more information.

and to drive out data through Q
edge of K.

when in single clock mode. All accesses are initiated on the rising

[x:0]

Input Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and

to drive out data through Q

when in single clock mode.

[x:0]

Document Number: 38-05621 Rev. *D Page 6 of 31

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CY7C1318BV18, CY7C1320BV18

Pin Definitions (continued)

Pin Name IO Pin Description

CQ Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

for output data (C) of the DDR-II. In single clock mode, CQ is generated with respect to K. The timing for
the echo clocks is shown in Switching Characteristics on page 23.

CQ

ZQ Input Output Impedance Matching Inpu t. This input is used to tune the device outputs to the system data bus

DOFF

TDO Output TDO for JTAG.
TCK Input TCK Pin for JTAG.
TDI Input TDI Pin for JTAG.
TMS Input TMS Pin for JTAG.
NC N/A Not Connected to the Die. Can be tied to any voltage level.
NC/36M N/A Not Connected to the Die. Can be tied to any voltage level.
NC/72M N/A Not Connected to the Die. Can be tied to any voltage level.
NC/144M N/A Not Connected to the Die. Can be tied to any voltage level.
NC/288M N/A Not Connected to the Die. Can be tied to any voltage level.
V

REF

V

DD

V

SS

V

DDQ

Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

Input DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing

Input-

Reference

Power Supply Power Supply Inputs to the Core of the Device.

Ground Ground for the Device.

Power Supply Power Supply Inputs for the Outputs of the Device.

for output data (C
the echo clocks is shown in Switching Characteristics on page 23.

impedance. CQ, CQ, and Q
between ZQ and ground. Alternatively, this pin can be connected directly to V
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

in the DLL turned off operation is different from that listed in this data sheet.

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.

) of the DDR-II. In single clock mode, CQ is generated with respect to K. The timing for

output impedance are set to 0.2 x RQ, where RQ is a resistor connected

[x:0]

, which enables the

DDQ

Document Number: 38-05621 Rev. *D Page 7 of 31

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CY7C1318BV18, CY7C1320BV18

Functional Overview

The CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and
CY7C1320BV18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface.

Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing is
referenced to the rising edge of the output clocks (C/C
when in single clock mode).

All synchronous data inputs (D
controlled by the rising edge of the input clocks (K and K
synchronous data outputs (Q
controlled by the rising edge of the output clocks (C/C

) pass through input registers

[x:0]

) pass through output registers

[x:0]

when in single-clock mode).
All synchronous control (R/W, LD, BWS

input registers controlled by the rising edge of the input clock (K).

) inputs pass through

[0:X]

CY7C1318BV18 is described in the following sections. The
same basic descriptions apply to CY7C1316BV18,
CY7C1916BV18, and CY7C1320BV18.

, or K/K

). All

, or K/K

mation presented to D
register , provided BWS
of data are then written into the memory array at the specified

is also stored into the write data

[17:0]

are both asserted active. The 36 bits

[1:0]

location. Write accesses can be initiated on every rising edge of
the positive input clock (K). This pipelines the data flow such that
18 bits of data can be transferred into the device on every rising
edge of the input clocks (K and K

).

When Write access is deselected, the device ignores all inputs
after the pending write operations are completed.

Byte Write Operations

Byte write operations are supported by the CY7C1318BV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS

, which are sampled with each set of 18-bit data words.

1

Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read/modify/write operations to a byte write operation.

Read Operations

The CY7C1318BV18 is organized internally as a single array of
1M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W

HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to address inputs is stored in
the read address register and the least significant bit of the
address is presented to the burst counter. The burst counter
increments the address in a linear fashion. Following the next K
clock rise, the corresponding 18-bit word of data from this
address location is driven onto Q
timing reference. On the subsequent rising edge of C the next

, using C as the output

[17:0]

18-bit data word from the address location generated by the
burst counter is driven onto Q

0.45 ns from the rising edge of the output clock (C or C

when in single clock mode, 200 MHz and 250 MHz device). To

K

. The requested data is valid

[17:0]

, or K and

maintain the internal logic, each read access must be allowed to
complete. Read accesses can be initiated on every rising edge
of the positive input clock (K).

The CY7C1318BV18 first completes the pending read transac­tions, when read access is deselected. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the positive output clock (C). This enables a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register and the least significant bit of the address is
presented to the burst counter. The burst counter increments the
address in a linear fashion. On the following K clock rise the data
presented to D
data register, provided BWS
subsequent rising edge of the negative input cl ock (K

is latched and stored into the 18-bit write

[17:0]

are both asserted active. On the

[1:0]

) the infor-

Single Clock Mode

The CY7C1318BV18 can be used with a single clock that
controls both the input and output registers. In this mode the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K
in this mode. T o use this mode of operation, tie C and C

and C/C clocks. All timing parameters remain the same

HIGH at
power on. This function is a strap option and not alterable during
device operation.

DDR Operation

The CY7C1318BV18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
double data rate mode of operation. The CY7C1318BV18
requires a single No Operation (NOP) cycle during transition
from a read to a write cycle. At higher frequencies, some appli­cations may require a second NOP cycle to avoid contention.

If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information must be stored
because the SRAM cannot perform the last word write to the
array without conflicting with the read. The data stays in this
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a posted write.

If a read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.

Depth Expansion

Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.

Document Number: 38-05621 Rev. *D Page 8 of 31

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CY7C1318BV18, CY7C1320BV18

Programmable Impedance

Vterm = 0.75V

Vterm = 0.75V

R = 50ohms

R = 250ohms

LD# C C#R/W#

DQ
A

K

LD# C C#R/W#

DQ
A

K

SRAM#1

SRAM#2

R = 250ohms

BUS

MASTER

(CPU

or

ASIC)

DQ

Addresses

Cycle Start#

R/W#
Return CLK
Source CLK

Return CLK#

Source CLK#
Echo Clock1/Echo Clock#1
Echo Clock2/Echo Clock#2

ZQ

CQ/CQ#

K#

ZQ

CQ/CQ#

K#

An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω
output impedance is adjusted every 1024 cycles at power up to
account for drifts in supply voltage and temperature.

to enable the SRAM to adjust its output

SS

, with V

=1.5V. The

DDQ

Echo Clocks

Echo clocks are provided on the DDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
DDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C

. These are free running clocks and are synchro-

nized to the output clock of the DDR-II. In the single clock mode,

Application Example

Figure 1 shows two DDR-II used in an application.

Figure 1. Application Example

CQ is generated with respect to K and CQ
respect to K

. The timing for the echo clocks is shown in Switching

is generated with

Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power up, when the DOFF
DLL is locked after 1024 cycles of stable clock. The DLL can also
be reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary to reset the DLL
to lock it to the desired frequency. The DLL automatically locks
1024 clock cycles after a stable clock is presented. The DLL may
be disabled by applying ground to the DOFF
refer to the application note AN5062, DLL Considerations in

QDRII/DDRII/QDRII+/DDRII+.

is tied HIGH, the

pin. For information

Document Number: 38-05621 Rev. *D Page 9 of 31

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CY7C1318BV18, CY7C1320BV18

Truth Table

Notes

2. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑

represents rising edge.

3. Device powers up deselected with the outputs in a tri-state condition.

4. On CY7C1318BV18 and CY7C1320BV18, “A1” represents address location latched by th e devices when t ransact ion was initiated and “ A2” represent s the addr esses
sequence in the burst. On CY7C1316BV18 and CY7C1916BV18, “A1” represents A + ‘0’ and “A2” represents A + ‘1’.

5. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.

6. Data inputs are registered at K and K

rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7. It is recommended that K = K

and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging

symmetrically.

8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS

0

, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on

different portions of a write cycle, as long as the setup and hold requirements are achieved.

The truth table for the CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and CY7C1320BV18 follows.

Operation K LD R/W DQ DQ

Write Cycle:

L-H L L D(A1) at K(t + 1) ↑ D(A2) at K
Load address; wait one cycle;
input write data on consecutive K and K

Read Cycle:

rising edges.

L-H L H Q(A1) at C(t + 1)↑ Q(A2) at C(t + 2) ↑
Load address; wait one and a half cycle;
read data on consecutive C

and C rising edges.
NOP: No Operation L-H H X High-Z High-Z
Standby: Clock Stopped Stopped X X Previous State Previous State

[2, 3, 4, 5, 6, 7]

(t + 1) ↑

Burst Address Table

(CY7C1318BV18, CY7C1320BV18)

First Address (External) Second Address (Internal)

X..X0 X..X1
X..X1 X..X0

Write Cycle Descriptions

The write cycle description table for CY7C1316BV18 and CY7C1318BV18 follows.

BWS0/

NWS

0

BWS1/

NWS

K

1

K

Comments

L L L–H – During the data portion of a write sequence:

CY7C1316BV18 − both nibbles (D
CY7C1318BV18 − both bytes (D

) are written into the device.

[7:0]

) are written into the device.

[17:0]

L L – L-H During the data portion of a write sequence:

CY7C1316BV18 − both nibbles (D
CY7C1318BV18 − both bytes (D

) are written into the device.

[7:0]

) are written into the device.

[17:0]

L H L–H – During the data portion of a write sequence:

CY7C1316BV18 − only the lower nibble (D
CY7C1318BV18 − only the lower byte (D

[3:0]

[8:0]

L H – L–H During the data portion of a write sequence:

CY7C1316BV18 − only the lower nibble (D
CY7C1318BV18 − only the lower byte (D

[3:0]

[8:0]

H L L–H – During the data portion of a write sequence:

CY7C1316BV18 − only the upper nibble (D
CY7C1318BV18 − only the upper byte (D

[7:4]

[17:9]

H L – L–H During the data portion of a write sequence:

CY7C1316BV18 − only the upper nibble (D
CY7C1318BV18 − only the upper byte (D

[7:4]

[17:9]

H H L–H – No data is written into the devices during this portion of a write operation.
H H – L–H No data is written into the devices during this portion of a write operation.

[2, 8]

) is written into the device, D

) is written into the device, D

) is written into the device, D

) is written into the device, D

) is written into the device, D

) is written into the device, D

) is written into the device, D

) is written into the device, D

remains unaltered.

[7:4]

remains unaltered.

[17:9]

remains unaltered.

[7:4]

remains unaltered.

[17:9]

remains unaltered.

[3:0]

remains unaltered.

[8:0]

remains unaltered.

[3:0]

remains unaltered.

[8:0]

Document Number: 38-05621 Rev. *D Page 10 of 31

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CY7C1318BV18, CY7C1320BV18

Write Cycle Descriptions

The write cycle description table for CY7C1916BV18 follows.

[2, 8]

BWS

L L–H – During the data portion of a write sequence, the single byte (D
L – L–H During the data portion of a write sequence, the single byte (D

K K Comments

0

) is written into the device.

[8:0]

) is written into the device.

[8:0]

H L–H – No data is written into the device during this portion of a write operation.
H – L–H No data is written into the device during this portion of a write operation.

Write Cycle Descriptions

The write cycle description table for CY7C1320BV18 follows.

BWS0BWS1BWS2BWS3K K Comments

LLLLL–H–During the data portion of a write sequence, all four bytes (D

the device.

LLLL–L–HDuring the data portion of a write sequence, all four bytes (D

the device.

L H H H L–H – During the data portion of a write sequence, only the lower byte (D

into the device. D

L H H H – L–H During the data portion of a write sequence, only the lower byte (D

into the device. D

H L H H L–H – During the data portion of a write sequence, only the byte (D

the device. D

H L H H – L–H During the data portion of a write sequence, only the byte (D

the device. D

H H L H L–H – During the data portion of a write sequence, only the byte (D

the device. D

H H L H – L–H During the data portion of a write sequence, only the byte (D

the device. D

H H H L L–H – During the data portion of a write sequence, only the byte (D

the device. D

H H H L – L–H During the data portion of a write sequence, only the byte (D

the device. D
HHHHL–H–No data is written into the device during this portion of a write operation.
HHHH–L–HNo data is written into the device during this portion of a write operation.

[2, 8]

[35:9]

[35:9]

and D

[8:0]

and D

[8:0]

and D

[17:0]

and D

[17:0]

remains unaltered.

[26:0]

remains unaltered.

[26:0]

remains unaltered.

remains unaltered.

remains unaltered.

[35:18]

remains unaltered.

[35:18]

remains unaltered.

[35:27]

remains unaltered.

[35:27]

[35:0]

[35:0]

[17:9]

[17:9]

[26:18]

[26:18]

[35:27]

[35:27]

) are written into

) are written into

) is written

[8:0]

) is written

[8:0]

) is written into

) is written into

) is written into

) is written into

) is written into

) is written into

Document Number: 38-05621 Rev. *D Page 11 of 31

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CY7C1318BV18, CY7C1320BV18

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA p ackage. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are inter­nally pulled up and may be unconnected. They may alternatively
be connected to V
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select (TMS)

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter­nally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State

Diagram on page 14. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.

Test Data-Out (TDO)

The TDO output pin is used to serially clock data out from th e
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of th e
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.

through a pull up resistor. TDO must be left

DD

Instruction Register

Three-bit instructions can be serially loaded into the instructi on
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 15. Upon power up, the instruction register i s loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.

When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V
the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of th e input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.

The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.

SS

) when

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction

Codes on page 17. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in detail below.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

Document Number: 38-05621 Rev. *D Page 12 of 31

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IDCODE

The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.

SAMPLE Z

The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.

The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.

To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (t
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK

After the data is captured, it is possible to shift out the data by
putting the T AP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.

and tCH). The SRAM clock input might not be captured

CS

captured in the boundary scan register.

PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.

The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.

BYPASS

When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.

EXTEST

The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.

EXTEST OUTPUT BUS TRI-ST ATE

IEEE Standard 1149.1 mandates that the T AP controller be able
to put the output bus into a tri-state mode.

The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.

This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is pre-set HIGH to enable
the output when the device is powered up, and also when the
T AP controller is in the Test-Logic-Reset state.

Reserved

These instructions are not implemented but are reserved for
future use. Do not use these instructions.

Document Number: 38-05621 Rev. *D Page 13 of 31

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TAP Controller State Diagram

TEST-LOGIC
RESET

TEST-LOGIC/
IDLE

SELECT
DR-SCAN

CAPTURE-DR

SHIFT-DR

EXIT1-DR

PAUSE-DR

EXIT2-DR

UPDA TE-DR

1

0

1

1

0

1

0

1

0

0

0

1

1

1

0

1

0

1

0

0

0

1

0

1

1

0

1

0

0

1

1

0

SELECT
IR-SCAN

CAPTURE-IR

SHIFT-IR

EXIT1-IR

PAUSE-IR

EXIT2-IR

UPDA TE-IR

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

The state diagram for the TAP controller follows.

[9]

Document Number: 38-05621 Rev. *D Page 14 of 31

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TAP Controller Block Diagram

0

012..29

3031

Boundary Scan Register

Identification Register

012..

.

.106

012

Instruction Register

Bypass Register

Selection
Circuitry

Selection
Circuitry

TA P Controller

TDI

TDO

TCK
TMS

Notes

10.These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.

11.Overshoot: V

IH

(AC) < V

DDQ

+ 0.85V (Pulse width less than t

CYC

/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than t

CYC

/2).

12.All Voltage referenced to Ground.

TAP Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions Min Max Unit

V

OH1

V

OH2

V

OL1

V

OL2

V

IH

V

IL

I

X

Output HIGH Voltage I
Output HIGH Voltage I
Output LOW Voltage IOL = 2.0 mA 0.4 V
Output LOW Voltage IOL = 100 μA0.2V
Input HIGH Voltage 0.65VDDV
Input LOW Voltage –0.3 0.35V
Input and Output Load Current GND ≤ VI ≤ V

[10, 11, 12]

= −2.0 mA 1.4 V

OH

= −100 μA1.6 V

OH

DD

–5 5 μA

+ 0.3 V

DD

DD

V

Document Number: 38-05621 Rev. *D Page 15 of 31

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TAP AC Switching Characteristics

t

TL

t

TH

(a)

TDO

C

L

= 20 pF

Z

0

= 50

Ω

GND

0.9V

50

Ω

1.8V

0V

ALL INPUT PULSES

0.9V

Test Clock

Test Mode Select

TCK

TMS

Test Data In
TDI

Test Data Out

t

TCYC

t

TMSH

t

TMSS

t

TDIS

t

TDIH

t

TDOV

t

TDOX

TDO

Notes

13.t

CS

and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.

14.Test conditions are specified using the load in TAP AC Test Conditions. t

R/tF

= 1 ns.

Over the Operating Range

Parameter Description Min Max Unit

t

TCYC

t

TF

t

TH

t

TL

TCK Clock Cycle Time 50 ns
TCK Clock Frequency 20 MHz
TCK Clock HIGH 20 ns
TCK Clock LOW 20 ns

Setup Times

t

TMSS

t

TDIS

t

CS

TMS Setup to TCK Clock Rise 5 ns
TDI Setup to TCK Clock Rise 5 ns
Capture Setup to TCK Rise 5 ns

Hold Times

t

TMSH

t

TDIH

t

CH

TMS Hold after TCK Clock Rise 5 ns
TDI Hold after Clock Rise 5 ns
Capture Hold after Clock Rise 5 ns

Output Times

t

TDOV

t

TDOX

TCK Clock LOW to TDO Valid 10 ns
TCK Clock LOW to TDO Invalid 0 ns

[13, 14]

TAP Timing and Test Conditions

Figure 2 shows the TAP timing and test conditions.

Figure 2. TAP Timing and Test Conditions

[14]

Document Number: 38-05621 Rev. *D Page 16 of 31

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Identification Register Definitions

Instruction Field

Revision Number
(31:29)

Cypress Device ID
(28:12)

Cypress JEDEC ID
(11:1)

ID Register
Presence (0)

CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18

000 000 000 000 Version number.

11010100010000101 11010100010001101 11010100010010101 11010100010100101 Defines the type of

00000110100 00000110100 00000110100 00000110100 Allows unique

1111Indicates the

Value

Description

SRAM.

identification of
SRAM vendor.

presence of an ID
register.

Scan Register Sizes

Register Name Bit Size

Instruction 3
Bypass 1
ID 32
Boundary Scan 107

Instruction Codes

Instruction Code Description

EXTEST 000 Captures the input and output ring contents.
IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO.

This operation does not affect SRAM operation.

SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and

TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED 01 1 Do not use: This instruction is reserved for future use.
SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI

RESERVED 101 Do not use: This instruction is reserved for future use.
RESERVED 110 Do not use: This instruction is reserved for future use.
BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM

and TDO. Does not affect the SRAM operation.

operation.

Document Number: 38-05621 Rev. *D Page 17 of 31

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Boundary Scan Order

Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID

0 6R 27 11H 54 7B 81 3G
1 6P 28 10G 55 6B 82 2G
26N 299G 566A 831J
3 7P 30 11F 57 5B 84 2J
4 7N 31 11G 58 5A 85 3K
57R 329F 594A 863J
6 8R 33 10F 60 5C 87 2K
7 8P 34 11E 61 4B 88 1K
8 9R 35 10E 62 3A 89 2L

9 11P 36 10D 63 1H 90 3L
10 10P 37 9E 64 1A 91 1M
11 10N 38 10C 65 2B 92 1L
12 9P 39 11D 66 3B 93 3N
13 10M 40 9C 67 1C 94 3M
14 11N 41 9D 68 1B 95 1N
15 9M 42 11B 69 3D 96 2M
16 9N 43 11C 70 3C 97 3P
17 11L 44 9B 71 1D 98 2N
18 11M 45 10B 72 2C 99 2P
19 9L 46 11A 73 3E 100 1P
20 10L 47 Internal 74 2D 101 3R
21 11K 48 9A 75 2E 102 4R
22 10K 49 8B 76 1E 103 4P
23 9J 50 7C 77 2F 104 5P
24 9K 51 6C 78 3F 105 5N
25 10J 52 8A 79 1G 106 5R
26 11J 53 7A 80 1F

Document Number: 38-05621 Rev. *D Page 18 of 31

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CY7C1318BV18, CY7C1320BV18

Power Up Sequence in DDR-II SRAM

~

~

DDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.

Power Up Sequence

■ Apply power and drive DOFF either HIGH or LOW (all other

inputs can be HIGH or LOW).

❐ Apply V
❐ Apply V
❐ Drive DOFF HIGH.

■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024

cycles to lock the DLL.

before V

DD
DDQ

K

before V

.

DDQ

or at the same time as V

REF

.

REF

Figure 3. Power Up Waveforms

DLL Constraints

■ DLL uses K clock as its synchronizing input. The input must

have low phase jitter, which is specified as t

■ The DLL functions at frequencies down to 120 MHz.

■ If the input clock is unstable and the DLL is enabled, then the

DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. T o avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.

~

KC Var

.

K

~

Unstable Clock

> 1024 Stable clock

Start Normal
Operation

/

Clock Start

/

V

V

DDQDD

(Clock Starts after Stable)

/

V

V

DDQDD

DOFF

V

V

DD

DDQ

Stable (< +/- 0.1V DC per 50ns )

Fix High (or tie to V

DDQ

)

Document Number: 38-05621 Rev. *D Page 19 of 31

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CY7C1318BV18, CY7C1320BV18

Maximum Ratings

Notes

15.Power up: assumes a linear ramp from 0V to V

DD

(min) within 200 ms. During this time V

IH

< V

DD

and V

DDQ

< VDD.

16.Outputs are impedance controlled. I

OH

= –(V

DDQ

/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

17.Outputs are impedance controlled. I

OL

= (V

DDQ

/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

18.V

REF

(min) = 0.68V or 0.46V

DDQ

, whichever is larger, V

REF

(max) = 0.95V or 0.54V

DDQ

, whichever is smaller.

19.The operation current is calculated with 50% read cycle and 50% write cycle.

Exceeding maximum ratings may impair the useful life of th e
device. These user guidelines are not tested.

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND........–0.5V to +2.9V

Supply Voltage on V

DC Applied to Outputs in High-Z.........–0.5V to V

DC Input Voltage

Relative to GND.......–0.5V to +V

DDQ

[11]

..............................–0.5V to VDD + 0.3V

DDQ

DD

+ 0.3V

Electrical Characteristics

Current into Outputs (LOW) ........................................20 mA

Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V

Latch up Current............................................... ...... >200 mA

Operating Range

Range

Temperature (TA) V

Commercial 0°C to +70°C 1.8 ± 0.1V 1.4V to V
Industrial –40°C to +85°C

Ambient

DD

[15]

V

DDQ

[15]

DD

DC Electrical Characteristics

Over the Operating Range

[12]

Parameter Description Test Conditions Min Typ Max Unit

V

DD

V

DDQ

V

OH

V

OL

V

OH(LOW)

V

OL(LOW)

V

IH

V

IL

I

X

I

OZ

V

REF

[19]

I

DD

Power Supply Voltage 1.7 1.8 1.9 V
IO Supply Voltage 1.4 1.5 V
Output HIGH Voltage Note 16 V
Output LOW Voltage Note 17 V
Output HIGH Voltage I

= −0.1 mA, Nominal Impedance V

OH

Output LOW Voltage IOL = 0.1 mA, Nominal Impedance V
Input HIGH Voltage V

/2 – 0.12 V

DDQ

/2 – 0.12 V

DDQ

– 0.2 V

DDQ

SS

+ 0.1 V

REF

Input LOW Voltage –0.3 V
Input Leakage Current GND ≤ VI ≤ V
Output Leakage Current GND ≤ VI ≤ V
Input Reference Voltage
VDD Operating Supply V

[18]

Typical Value = 0.75V 0.68 0.75 0.95 V

= Max,

DD

I

= 0 mA,

OUT

f = f

MAX

= 1/t

DDQ

Output Disabled −5 5 μA

DDQ,

300 MHz (x8) 815 mA

(x9) 820

CYC

(x18) 855

−5 5 μA

DD

/2 + 0.12 V

DDQ

/2 + 0.12 V

DDQ

DDQ

0.2 V
+ 0.3 V

DDQ

– 0.1 V

REF

(x36) 930

278 MHz (x8) 775 mA

(x9) 780
(x18) 805
(x36) 855

250 MHz (x8) 705 mA

(x9) 710
(x18) 730
(x36) 775

V

V

Document Number: 38-05621 Rev. *D Page 20 of 31

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Electrical Characteristics (continued)

DC Electrical Characteristics

Over the Operating Range

[12]

Parameter Description Test Conditions Min Typ Max Unit

[19]

I

DD

VDD Operating Supply V

DD

I

OUT

f = f

= Max,

= 0 mA,

= 1/t

MAX

CYC

200 MHz (x8) 575 mA

(x9) 580
(x18) 600
(x36) 635

167 MHz (x8) 490 mA

(x9) 490
(x18) 510
(x36) 540

I

SB1

Automatic Power Down
Current

Max VDD,
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = f
Inputs Static

MAX

= 1/t

CYC,

300 MHz (x8) 315 mA

(x9) 315
(x18) 325
(x36) 350

278 MHz (x8) 305 mA

(x9) 305
(x18) 315
(x36) 330

250 MHz (x8) 300 mA

(x9) 300
(x18) 300
(x36) 320

200 MHz (x8) 285 mA

(x9) 285
(x18) 290
(x36) 300

167 MHz (x8) 280 mA

(x9) 280
(x18) 285
(x36) 295

AC Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions Min Typ Max Unit

V

IH

V

IL

Input HIGH Voltage V
Input LOW Voltage – – V

Document Number: 38-05621 Rev. *D Page 21 of 31

[11]

+ 0.2 – – V

REF

– 0.2 V

REF

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CY7C1318BV18, CY7C1320BV18

Capacitance

1.25V

0.25V

R = 50Ω

5pF

INCLUDING

JIG AND

SCOPE

ALL INPUT PULSES

Device

R

L

= 50Ω

Z

0

= 50Ω

V

REF

= 0.75V

V

REF

= 0.75V

[20]

0.75V

Under
Test

0.75V

Device
Under
Test

OUTPUT

0.75V

V

REF

V

REF

OUTPUT

ZQ

ZQ

(a)

Slew Rate = 2 V/ns

RQ =
250

Ω

(b)

RQ =
250

Ω

Note

20.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V

REF

= 0.75V, RQ = 250Ω, V

DDQ

= 1.5V, input pulse

levels of 0.25V to 1.25V, and output loading of the specified I

OL/IOH

and load capacitance shown in (a) of AC Test Loads and Waveforms.

Tested initially and after any design or process change that may affect these parameters.

Parameter Description Test Conditions Max Unit

C

Input Capacitance TA = 25°C, f = 1 MHz, VDD = 1.8V, V

IN

C

CLK

C

O

Clock Input Capacitance 6 pF
Output Capacitance 7pF

= 1.5V 5 pF

DDQ

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter Description Test Conditions

Θ

JA

Θ

JC

Thermal Resistance
(Junction to Ambient)

Thermal Resistance
(Junction to Case)

Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.

Figure 4. AC Test Loads and Waveforms

165 FBGA

Package

18.7 °C/W

4.5 °C/W

Unit

Document Number: 38-05621 Rev. *D Page 22 of 31

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Switching Characteristics

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires th e input timings of the freque ncy range in which it is being
operated and outputs data with the output timings of that fre quency range.

22.This part has an internal voltage regulator; t

POWER

is the time that the power is supplied above V

DD

minimum initially before a read or write operation can be initiated.

23.For DQ2 data signal on CY7C1916BV18 device, t

SD

is 0.5 ns for 200 MHz, 250 MHz, 278 MHz, and 300 MHz frequencies.

Over the Operating Range

[20, 21]

Cypress

Parameter

t

POWER

t

CYC

t

KH

t

KL

t

KHKH

t

KHCH

Consortium

Parameter

t

KHKH

t

KHKL

t

KLKH

t

KHKH

t

KHCH

Setup Times

t

SA

t

SC

t

SCDDRtIVKH

[23]

t

SD

t

AVKH

t

IVKH

t

DVKH

Hold Times

t

HA

t

HC

t

HCDDRtKHIX

t

HD

t

KHAX

t

KHIX

t

KHDX

Description

Unit

Min Max Min Max Min Max Min Max Min Max

300 MHz 278 MHz 250 MHz 200 MHz 167 MHz

VDD(Typical) to the First Access

[22]

1–1–1–1–1–ms
K Clock and C Clock Cycle Time 3.30 8.4 3.60 8.4 4.0 8.4 5.0 8.4 6.0 8.4 ns
Input Clock (K/K and C/C) HIGH 1.32 – 1.4 – 1.6 – 2.0 – 2.4 – ns
Input Clock (K/K and C/C) LOW 1.32 – 1.4 – 1.6 – 2.0 – 2.4 – ns
K Clock Rise to K Clock Rise and C

Rise (rising edge to rising edge)

to C
K/K Clock Rise to C/C Clock Rise

1.49 – 1.6 – 1.8 – 2.2 – 2.7 – ns

0.00 1.45 0.00 1.55 0.00 1.8 0.00 2.2 0.00 2.7 ns

(rising edge to rising edge)

Address Setup to K Clock Rise 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns
Control Setup to K Clock Rise

(LD

, R/W)

Double Data Rate Control Setup to
Clock (K/K
(BWS

D

[X:0]

) Rise

, BWS1, BWS2, BWS3)

0

Setup to Clock (K and K) Rise 0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

Address Hold after K Clock Rise 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns
Control Hold after K Clock Rise

(LD

, R/W)

Double Data Rate Control Hold after
Clock (K/K
(BWS

D

[X:0]

) Rise

, BWS1, BWS2, BWS3)

0

Hold after Clock (K/K) Rise 0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns

0.3 – 0.3 – 0.35 – 0.4 – 0.5 – ns

Document Number: 38-05621 Rev. *D Page 23 of 31

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Switching Characteristics (continued)

Notes

24.t

CHZ

, t

CLZ

are specified with a load capacitance of 5 pF as in (b) of AC T est Lo ads and Waveforms on p age 22. Transit ion is measured ±100 mV from steady-state voltage.

25.At any voltage and temperature t

CHZ

is less than t

CLZ

and t

CHZ

less than tCO.

Over the Operating Range

[20, 21]

Cypress

Parameter

Consortium

Parameter

Output Times

t

CO

t

DOH

t

CCQO

t

CQOH

t

CQD

t

CQDOHtCQHQX

t

CHZ

t

CLZ

t

CHQV

t

CHQX

t

CHCQV

t

CHCQX

t

CQHQV

t

CHQZ

t

CHQX1

DLL Timing

t

KC Var

t

KC lock

t

KC ResettKC Reset

t

KC Var

t

KC lock

Description

Unit

Min Max Min Max Min Max Min Max Min Max

300 MHz 278 MHz 250 MHz 200 MHz 167 MHz

C/C Clock Rise (or K/K in single

– 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns
clock mode) to Data Valid

Data Output Hold after Output C/C

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Clock Rise (Active to Active)
C/C Clock Rise to Echo Clock Valid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns
Echo Clock Hold after C/C Clock

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Rise
Echo Clock High to Data Valid – 0.27 – 0.27 – 0.30 – 0.35 – 0.40 ns
Echo Clock High to Data Invalid –0.27 – –0.27 – –0.30 – –0.35 – –0.40 – ns
Clock (C/C) Rise to High-Z

(Active to High-Z)

[24, 25]

Clock (C/C) Rise to Low-Z

[24, 25]

– 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns

–0.45 – –0.45 – –0.45 – –0.45 – –0.50 – ns

Clock Phase Jitter – 0.20 – 0.20 – 0.20 – 0.20 – 0.20 ns
DLL Lock Time (K, C) 1024 – 1024 – 1024 – 1024 – 1024 – Cycles
K Static to DLL Reset 30–30–30–30–30–ns

Document Number: 38-05621 Rev. *D Page 24 of 31

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Switching Waveforms

Notes

26.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.

27.Outputs are disabled (High-Z) one clock cycle after a NOP.

28.In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded imme diately as read resu lts. This note applies to t he whole diagram.

Figure 5. Read/Write/Deselect Sequence

[26, 27, 28]

R/W

DQ

LD

NOP

1

K

t

KH

K

A

C

t

KHCH

READ READREAD NOP NOP WRITEWRITE

2345678 910

A1

t

KHKH

t

CLZ

t

CO

Q00 Q11Q01 Q10

t

CQDOH

t

DOH

t

CQD

A2

t

CHZ

A3

t

HD

t

SD

D20

t

t

KH

KL

A4

t

SD

D21 D30

t

CYC

t

HD

t

D31

KHKH

Q40

t

t

t

SA

KL

SC

A0

t

HC

t

HA

t

CYC

t

KHCH

Q41

C#

t

CCQO

DON’T CARE

UNDEFINED

CQ

CQ#

t

CQOH

t

CCQO

t

CQOH

Document Number: 38-05621 Rev. *D Page 25 of 31

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Ordering Information

Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

300 CY7C1316BV18-300BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial

CY7C1916BV18-300BZC
CY7C1318BV18-300BZC
CY7C1320BV18-300BZC
CY7C1316BV18-300BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-300BZXC
CY7C1318BV18-300BZXC
CY7C1320BV18-300BZXC
CY7C1316BV18-300BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial
CY7C1916BV18-300BZI
CY7C1318BV18-300BZI
CY7C1320BV18-300BZI
CY7C1316BV18-300BZXI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-300BZXI
CY7C1318BV18-300BZXI
CY7C1320BV18-300BZXI

278 CY7C1316BV18-278BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial

CY7C1916BV18-278BZC
CY7C1318BV18-278BZC
CY7C1320BV18-278BZC
CY7C1316BV18-278BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-278BZXC
CY7C1318BV18-278BZXC
CY7C1320BV18-278BZXC
CY7C1316BV18-278BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial
CY7C1916BV18-278BZI
CY7C1318BV18-278BZI
CY7C1320BV18-278BZI
CY7C1316BV18-278BZXI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-278BZXI
CY7C1318BV18-278BZXI
CY7C1320BV18-278BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05621 Rev. *D Page 26 of 31

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Ordering Information (continued)

Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

250 CY7C1316BV18-250BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial

CY7C1916BV18-250BZC
CY7C1318BV18-250BZC
CY7C1320BV18-250BZC
CY7C1316BV18-250BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-250BZXC
CY7C1318BV18-250BZXC
CY7C1320BV18-250BZXC
CY7C1316BV18-250BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial
CY7C1916BV18-250BZI
CY7C1318BV18-250BZI
CY7C1320BV18-250BZI
CY7C1316BV18-250BZXI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-250BZXI
CY7C1318BV18-250BZXI
CY7C1320BV18-250BZXI

200 CY7C1316BV18-200BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial

CY7C1916BV18-200BZC
CY7C1318BV18-200BZC
CY7C1320BV18-200BZC
CY7C1316BV18-200BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-200BZXC
CY7C1318BV18-200BZXC
CY7C1320BV18-200BZXC
CY7C1316BV18-200BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial
CY7C1916BV18-200BZI
CY7C1318BV18-200BZI
CY7C1320BV18-200BZI
CY7C1316BV18-200BZXI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-200BZXI
CY7C1318BV18-200BZXI
CY7C1320BV18-200BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05621 Rev. *D Page 27 of 31

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Ordering Information (continued)

Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.

Speed

(MHz)

167 CY7C1316BV18-167BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial

CY7C1916BV18-167BZC
CY7C1318BV18-167BZC
CY7C1320BV18-167BZC
CY7C1316BV18-167BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-167BZXC
CY7C1318BV18-167BZXC
CY7C1320BV18-167BZXC
CY7C1316BV18-167BZI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Industrial
CY7C1916BV18-167BZI
CY7C1318BV18-167BZI
CY7C1320BV18-167BZI
CY7C1316BV18-167BZXI 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1916BV18-167BZXI
CY7C1318BV18-167BZXI
CY7C1320BV18-167BZXI

Ordering Code

Package
Diagram

Package Type

Operating

Range

Document Number: 38-05621 Rev. *D Page 28 of 31

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Package Diagram

A

1

PIN 1 CORNER

15.00±0.10

13.00±0.10

7.00

1.00

Ø0.50 (165X)

Ø0.25MCAB

Ø0.05 M C

B

A

0.15(4X)

0.35±0.06

SEATING PLANE

0.53±0.05

0.25 C

0.15 C

PIN 1 CORNER

TOP VIEW

BOTTOM VIEW

2345678910

10.00

14.00

B

C

D

E

F

G

H

J

K

L

M

N

11

1110986754321

P

R

P

R

K

M

N

L

J

H

G

F

E

D

C

B

A

A

15.00±0.10

13.00±0.10

B

C

1.00

5.00

0.36

-0.06

+0.14

1.40 MAX.

SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)

NOTES :

PACKAGE WEIGHT : 0.475g

JEDEC REFERENCE : MO-216 / DESIGN 4.6C

PACKAGE CODE : BB0AC

51-85180-*A

Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180

Document Number: 38-05621 Rev. *D Page 29 of 31

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Document History Page

Document Title: CY7C1316BV18/CY7C1916BV18/CY7C1318BV18/CY7C1320BV18, 18-Mbit DDR-II SRAM 2-Word Burst Ar­chitecture
Document Number: 38-05621

Rev. ECN No.

Submission

Date

** 252474 See ECN SYT New data sheet

*A 325581 See ECN SYT Removed CY7C1320BV18 from the title

*B 413997 See ECN NXR Converted from Preliminary to Final

*C 472384 See ECN NXR Modified the ZQ Definition from Alternately, this pin can be connected directly to V

Orig, of

Change

Description of Change

Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
Replaced the TBDs on the Thermal Characteristics Table to Θ

Θ

= 5.91°C/W

JC

Replaced TBDs in the Capacitance Table for the 165 FBGA Package

DD

and I

SB1

specs

= 28.51°C/W and

JA

Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per avail­ability

Added CY7C1916BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901

North First Street” to “198 Champion Court”
Changed C/C

Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
page# 20

from Input Load Current to Input Leakage Current on

X

Modified the IDD and ISB values
Modified test condition in Footnote #18 on page# 20 from V
V

< V

DDQ

Replaced Package Name column with Package Diagram in the Ordering

DD

DDQ

< VDD to

Information table
Updated Ordering Information Table

to Alternately, this pin can be connected directl y to V
Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
from 10 ns to 5 ns and changed t
Characteristics table

TH

and t

from 40 ns to 20 ns, changed t

TL

TDOV

from 20 ns to 10 ns in TAP AC Switching

DDQ

Relative to GND

DDQ

, t

TMSS

TDIS

DDQ

, tCS, t

to V

DD

TMSH

, t

TDIH

Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table

DD

, t

CH

Document Number: 38-05621 Rev. *D Page 30 of 31

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CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18

Document History Page

Document Title: CY7C1316BV18/CY7C1916BV18/CY7C1318BV18/CY7C1320BV18, 18-Mbit DDR-II SRAM 2-Word Burst Ar­chitecture
Document Number: 38-05621

*D 2511674 06/03/08 VKN/PYRS Updated Logic Block diagrams

Updated I
Added footnote# 19 related to I
Updated power up sequence waveform and its description

DD/ISB

specs

DD

Changed DLL minimum operating frequency from 80 MHz to 120 MHz
Changed Θ
Changed Θ
Changed t
Modified footnotes 21 and 28

spec from 28.51 to 18.7

JA

spec from 5.91 to 4.5

JC

maximum spec to 8.4 ns for all speed bins

CYC

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Document Number: 38-05621 Rev. *D Revised June 2, 2008 Page 31 of 31

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