Cypress Semiconductor CY7C107-15VCT, CY7C107-15VC, CY7C1007-15VC, CY7C1007-12VCT, CY7C1007-12VC Datasheet
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1M x 1 Static RAM
CY7C107
CY7C1007
Cypress Semiconductor Corporation
• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
December 1992 – Revised September 3, 1999
Features
• High speed
—t
AA
= 12 ns
• CMOS for optimum speed/power
• Low active power
—825 mW
• Low standb y p ow er
—275 mW
• 2.0V data retention (opti onal)
—
100 µW
• Automat ic power-down when deselected
• TTL-compatibl e inputs and outputs
Functional Description
The CY7C107 and CY7C1007 are high-performance CMOS
static RAMs organized as 1,048,576 words by 1 bit. Easy
memory expansion is p rovi ded by an activ e LO W Chip Enabl e
(CE
) and three-state drivers. Thes e devices hav e an automatic
power-down feature that reduces po wer co nsumpt ion b y mor e
than 65% when deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE
) and Write Enable ( WE) inputs LO W . Dat a on the inpu t pin
(D
IN
) is written into the memory location specified on the ad-
dress pins (A
0
through A19).
Reading from the devices is accomplished by taking Chip Enable (CE
) LOW while Write Enable ( WE) remains HIGH. Under
these conditions, the contents of the memory location specified by t he address pi ns will appear on the data output (D
OUT
)
pin.
The output pin (D
OUT
) is placed in a high-impedance state
when the device is deselected (CE
HIGH) or during a write
operation (CE
and WE LOW).
The CY7C107 is av ailab le in a standard 40 0-mil-wi de SOJ; the
CY7C1007 is available in a standard 300-mil-wide SOJ.
LogicBlock Diagram Pin Configuration
Top View
SOJ
512x2048
ARRA
Y
A
5
A
6
A
7
COLUMN
DECODER
ROW DECODER
SENSE AMPS
POWER
DOWN
WE
CE
INPUT BUFFER
D
OUT
D
IN
A
4
A
3
A
2
A
1
A
0
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
12
13
25
28
27
26
GND
A
11
A
12
A
13
A
14
WE
V
CC
A
9
A
10
CE
A
0
D
OUT
D
IN
A
8
A
7
A
6
A
2
A
1
A
4
NC
NC
A
15
A
16
A
8
A12A14A16A
15
A10A11A
13
A17A18A
19
A
17
A
18
A
19
A
5
A
3
A
9
107-1
107-2
Selection Guid e
7C107-12
7C1007-12
7C107-15
7C1007-15
7C107-20
7C1007-20
7C107-25
7C1007-25
7C107-35
Maximum Access Time (ns) 12 15 20 25 35
Maximum Operating
Current (mA)
150 135 125 120 110
Maximum Standb y
Current (mA)
50 40 30 30 25
CY7C107
CY7C1007
2
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .....................................−65°C to +1 5 0 °C
Ambient Temperature with
Po wer Applied..................................................−55°C to +125°C
Supply Voltage on V
CC
Relative to GND
[1]
.....−0.5V to +7.0V
DC V oltage Applied to Outputs
in High Z State
[1]
....................................... −0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
....................................−0.5V to V
CC
+ 0.5V
Curre n t in to Out p ut s (L OW ).......... ............................... 20 mA
Static Discharge Voltage .......... ............ ............ .........>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the “instant on” case temperature.
3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Operating Range
Range
Ambient
Temperature
[2]
V
CC
Commercial 0°C to +70°C 5V ± 10%
Industrial
−40°C to +85 °C
5V ± 10%
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
7C107-12
7C1007-12
7C107-15
7C1007-15
7C107-20
7C1007-20
Min. Max. Min. Max. Min. Max. Unit
V
OH
Output HIGH
Voltage
VCC = Min., IOH = −4.0 mA 2.4 2.4 2.4 V
V
OL
Output LOW
Voltage
VCC = Min., IOL = 8.0 mA 0.4 0.4 0.4 V
V
IH
Input HIGH
Voltage
2.2 VCC+
0.3
2.2 VCC+
0.3
2.2 VCC+
0.3
V
V
IL
Input LOW
Voltage
[1]
−0.3 0.8 −0.3 0.8 −0.3 0.8 V
I
IX
Input Load Current GND < VI < V
CC
−1+1−1+1−1+1µA
I
OZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5+5–5+5–5+5µA
I
OS
Output Short
Circuit Current
[3]
VCC = Max., V
OUT
= GND −300 −300 −300 mA
I
CC
VCC Operating
Supply Current
VCC = Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
150 135 125 mA
I
SB1
Automatic CE
Power-Down
Curr ent— TTL Inputs
Max. VCC, CE > VIH,
V
IN
>V
IH
or VIN < VIL,
f = f
MAX
50 40 30 mA
I
SB2
Automatic CE
Power-Down
Curr ent—
CMOS Inputs
Max. V
CC
,
CE
> VCC – 0.3V,
V
IN
> VCC – 0.3V or
V
IN
< 0.3V, f = 0
222mA
CY7C107
CY7C1007
3
Electrical Characteristics
Over the Operating Range (continued)
Parameter Description Test Conditions
7C107-25
7C1007-25 7C107-35
Min. Max. Min. Max. Unit
V
OH
Output HIGH
Voltage
VCC = Min., IOH = −4. 0 mA 2.4 2.4 V
V
OL
Output LO W Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 V
V
IL
Input LOW Voltage
[1]
−0.3 0.8 −0.3 0.8 V
I
IX
Input Load Current GND < VI < V
CC
−1+1−1+1µA
I
OZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
−5+5−5+5µA
I
OS
Output Short
Circuit Current
[3]
VCC = Max., V
OUT
= GND −300 −300 mA
I
CC
VCC Operating
Supply Current
VCC = Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
120 110 mA
I
SB1
Autom atic CE
Power-Down
Current—TTL Inputs
Max. VCC, CE > VIH,
V
IN
>VIH or VIN < VIL,
f = f
MAX
30 25 mA
I
SB2
Autom atic CE
Power-Down
Current—CMOS Inputs
Max. V
CC
,
CE
> VCC – 0.3V,
V
IN
> VCC – 0.3V or
V
IN
< 0.3V , f = 0
22mA
Capacitance
[4]
Parameter Description Test Conditions Max. Unit
C
IN
: A ddre sses Input Capacitance TA = 25°C, f = 1 MHz,
V
CC
= 5.0V
7pF
C
IN
: Controls 10 pF
C
OUT
Output Capacitance 10 pF
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
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