• True dual-ported memory cells which allow
simultaneous reads of the same memory location
• 16K x 8 organizat ion (CY7C006)
• 16K x 9 organizat ion (CY7C016)
• 0.65-micron CMOS for optim um speed/power
• High-speed access: 15 ns
• Low op e rating pow er: I
= 140 mA (typ.)
CC
• Fully asy nchronous operation
• Automatic power-down
• TTL compatible
• Expandab le dat a bus to 16/18 bits or more using
Master/Slave chip select when using more than one
device
• Busy arbitration scheme provided
• Semaphores i ncluded to per mit software hand shaking
between ports
flag for port-to-port communication
•INT
• Available in 68-pin PLCC (7C006), 64-pin (7C006) and
80-pin (7 C016) TQFP
• Pin compatible and functional equivalent to
IDT7006/IDT7016
Functional Description
The CY7C006 and CY7C016 are high-speed CMOS 16K x 8
and 16K x 9 dual-port static RAMs. Various arbitration
CY7C006
CY7C016
16K x 8/9 Dual-Port Static RAM
with Sem, Int, Busy
schemes are included on the CY7C006/016 to handle situations when mul tiple processors access t he same pi ece of d ata.
Two ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory.
The CY7C006/016 can be utilized as a standalone
128-/144-Kbit dual-port static RAM or multiple devices can be
combined in order to function as a 16-/18-bit or wider master/slave dual-port static RAM. An M/S
plementing 16-/18-bit or wider memory applications without
the need for separate master and slave devices or additional
discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/grap hics memory.
Each port has independent control pins: Chip Enable (CE
Read or Write Enable (R/W
flags, BUSY
and INT, are provided on each port. BUSY signals
), and Output Enable (OE). Two
that the port is trying to access the same location currently
being accessed by t he other port. The Int errupt fla g (INT
mits communication between ports or systems b y means of a
mail box. The semaphores are used to pass a flag, or token,
from one port to the other to indica te that a shared r esource i s
in use. The semaphore logic is comprised of eight shared
latches. Only one side can control the latch (semaphore) at
any time. Control of a semaphore indicates that a shared resource is in use. An automatic power-down feature is controlled independently on each port by a Chip Enable (CE
or SEM
pin.
The CY7C006 and CY7C016 are available in 68-pin PLCC
(CY7C006), 64-pin (CY7C006) TQFP, and 80-pin (CY7C016) TQFP.
pin is provided for im-
),
) per-
) pin
R/W
CE
OE
I/O
I/O
BUSY
A
A
13L
L
L
L
8L
7L
0L
[1,2]
L
0L
SEM
L
[2]
INT
L
Logic Block Diagram
(7C016)I/O
Notes:
1. BUSY
2. Interrupt: push-pull output and requires no pull-up resistor.
is an output in master mode and an input in slave mode.
ADDRESS
DECODER
CE
OE
R/W
I/O
CONTROL
L
L
L
MEMORY
ARRAY
INTERRUPT
SEMAPHORE
ARBITRATION
M/S
I/O
CONTROL
ADDRESS
DECODER
CE
R
OE
R
R/W
R
SEM
INT
R
[2]
R
R/W
R
CE
R
OE
R
I/O8R(7C016)
I/O
7R
I/O
0R
[1,2]
BUSY
R
A
13R
A
0R
C006-1
Cypress Semiconductor Corporation
•3901 North First Street•San Jose•CA 95134•408-943-2600
December 22, 1999
Data Bus Input/Output
Address Lines
Chi p E nable
Output Enable
R
R
Read/Write Enable
Semaphore Enable. When asserted LOW, allows access to eight sema-
phores. The three least significant bits of the address lines will dete rmine
which semaphore to write or read. The I/O
semaphore. Semaph ores are requested by writi ng a 0 into the respective
location.
Interrupt Flag. INTL is set when right port writes location 3FFE and is
cleared when left port reads loc ation 3FFE. I NT
location 3FFF and is clear ed when right port reads location 3FFF.
R
Busy Flag
Power
pin is used when writing to a
0
is set when left port writes
R
3
CY7C006
CY7C016
Selection G uide
7C006-15
7C016-15
Maximum Access Time (ns)15253555
Maximum Operating
260220210200
Current (mA)
Maximum Standby
Current for I
SB1
(mA)
70605040
7C006-25
7C016-25
7C006-35
7C016-35
7C006-55
7C016-55
Maximum Ratings
(Abov e which the useful lif e m ay be impaired. For user guidelines, not tested.)
Storage Temperature .............. ...................–65°C to +1 5 0°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential...............–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State............................................... –0.5V to +7.0V
[4]
DC Input Voltage
Electrical Characteristics
......................................... –0.5V to +7.0V
Over the Operating Range
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ......................... .. ............... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current............. ............ ............ ............ ... >200 mA
Operating Range
Range
Commercial0°C to +70°C 5V ± 10%
Industrial–40°C to +85°C 5V ± 10%
7C006-15
7C016-15
Ambient
TemperatureV
7C006-25
7C016-25
CC
ParameterDescriptionT est ConditionsMin. Typ. Max. Min. Typ. Max. Unit
2.22.2V
Input LOW Voltage0.80.8V
Input Leakage CurrentGND ≤ VI ≤ V
CC
Output Leakage Current Outputs Disabled, GND ≤ VO ≤ V
Operating CurrentVCC = Max., I
Outputs Disabled
Standby Current
(Both Ports TTL Levels)
Standby Current
(One Port TTL Level)
Standby Current
(Both Ports CMOS
Levels)
Standby Current
(One Port CMOS Level)
= 1/tRC = All inputs c ycling at f = 1/tRC (except output enab le) . f = 0 mea ns no add ress or contr ol lines change . T his appl ies onl y to inpu ts at C MOS le v el s tandby I