Cypress Semiconductor CY62256LL-70ZC, CY62256LL-70SNI, CY62256LL-70SNC, CY62256LL-70PC, CY62256LL-55ZRC Datasheet
...
32Kx8 Static RAM
f
ax id: 1068
CY62256
Cypress Semiconductor Corporation
• 3901 North First Street • San Jose • CA 95134 • 408-943-2600
March 1996 – Revised November 26
,
1997
Features
• 4.5V–5.5V Operation
• Low active po wer (70 ns, LL version)
—275 mW (max.)
• Low standb y po wer (70 ns, LL version)
—
28 µW (max.)
• 55, 70 ns access time
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automat ic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The CY62256 is a hig h-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE
) and active LOW
output enab le ( OE
) and three-state dri vers . This dev ice has an
automatic power-down feature, reducing the power consum ption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
600-mil PDIP packa ges.
An active LOW write enable signal (WE
) controls the writ-
ing/reading oper ation of t he memory. When CE
and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O7) is written into the m emory locat ion a ddre ssed b y
the address present on the address pins (A
0
through A14).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE
and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/out put pins rem ain in a high- impedance state unle ss
the chip is selected, outputs are enabled, and write enable
(WE
) is HIGH.
LogicBlockDiagram
Pin
Configurations
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUTBUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
SOIC/DIP
12
13
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
WE
V
CC
A
4
A
3
A
2
A
1
I/O
7
I/O
6
I/O
5
I/O
4
A
14
A
5
I/O
0
I/O
1
I/O
2
CE
OE
A
0
I/O
3
512x512
ARRA
Y
I/O
7
I/O
6
I/O
5
I/O
4
A
10
A13A11A
12
A
1
A
14
C62256–1
C62256–2
A
0
22
23
24
25
26
27
28
1
2
5
10
11
15
14
13
12
16
19
18
17
3
4
20
21
7
6
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
0
CE
I/O
7
I/O
6
I/O
5
GND
I/O
2
I/O
1
I/O
4
I/O
0
A
14
A
10
A
11
A
13
A
12
C62256–3
I/O
3
22
23
24
25
26
27
28
1
2
5
10
11
15
14
13
12
16
19
18
17
3
4
20
21
7
6
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
0
CE
I/O
7
I/O
6
I/O
5
GND
I/O
2
I/O
1
I/O
4
I/O
0
A
14
A
10
A
11
A
13
A
12
C62256–4
I/O
3
TSOP I
Top View
(not to scale)
TSOP I
Top View
(not to scale)
Reverse Pinout
CY62256
2
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .....................................−65°C to +150°C
Ambient Temper ature with
Power Applied...................................................0°C to +70°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14).................................................−0.5V to +7.0V
DC V oltage Applied to Outputs
in High Z State
[1]
....................................... −0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
.................................... −0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current........... ....................... .......... ........ >200 mA
Operating Range
Range Ambient Temperature V
CC
Commercial 0°C to +70°C 5V ± 10%
Industrial –40°C to +85°C 5V ± 10%
Electrical Characteristics
Over the Operati ng Range
Parameter Description Test Conditions
CY62256−55 CY62256−70
UnitMin. Typ
[2]
Max. Min. Typ
[2]
Max.
V
OH
Output HIGH Voltage VCC = Min., IOH = −1.0 mA 2.4 2.4 V
V
OL
Output LOW Voltage VCC = Min., IOL = 2.1 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+0.5V
2.2 V
CC
+0.5V
V
V
IL
Input LOW Voltage
−0.5
0.8
−0.5
0.8 V
I
IX
Input Load Current GND < VI < V
CC
−0.5
+0.5
−0.5
+0.5
µA
I
OZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
−0.5
+0.5
−0.5
+0.5
µA
I
CC
VCC Operating Supply
Current
VCC = Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
28 55 28 55 mA
L 25 50 25 50 mA
LL 25 50 25 50 mA
I
SB1
Automatic CE
Po wer-Down Current—
TTL Inputs
Max. VCC, CE > VIH,
V
IN
> VIH or
V
IN
< VIL, f = f
MAX
0.5 2 0.5 2 mA
L 0.4 0.6 0.4 0.6 mA
LL 0.3 0.5 0.3 0.5 mA
I
SB2
Automatic CE
Po wer-Down Current—
CMOS Inputs
Max. VCC,
CE
> VCC − 0.3V
V
IN
> VCC − 0.3V
or V
IN
< 0.3V , f = 0
1 5 1 5 mA
L 2 50 2 50
µA
LL 0.1 5 0.1 5
µA
Indust’l Temp Range LL 0. 1 10 0.1 10
µA
Shaded area contains preliminary information.
Capacitance
[3]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance TA = 25°C, f = 1 MHz,
V
CC
= 5.0V
6 pF
C
OUT
Output Capacitance 8 pF
Note:
1. V
IL
(min.) = −2.0V for pulse durations of less than 20 ns.
2. Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions
(T
A
= 25°C, VCC). Parameters are guaranteed by design and characterization, and not 100% tested.
3. Tested initially and after any design or process changes that may affect these parameters.
CY62256
3
AC Test Loads and Waveforms
3.0V
5V
OUTPUT
R1 1800
Ω
R2
990
Ω
100pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
<5ns
<5ns
5V
OUTPUT
R1 1800
Ω
R2
990
Ω
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT 1.77V
Equivalent to: THÉ VENIN EQUIVA LENT
ALL INPUT PULSES
C62256–5
C62256–6
639
Ω
Data Retention Characteristics
Parameter Description Conditions
[4]
Min. Typ.
[2]
Max. Unit
V
DR
VCC for Da ta Reten tion VCC = 3.0V,
CE
> VCC − 0.3 V,
V
IN
> VCC − 0.3V or
V
IN
< 0.3 V
2.0 V
I
CCDR
Data Retention Current L 2 50
µA
LL 0.1 5
µA
LL Indust’l 0.1 10
µA
t
CDR
[3]
Chip Deselect to Data
Retention Time
0 ns
t
R
[3]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Note:
4. No input may exceed V
CC
+0.5V.
C62256–7
3.0V3.0V
t
CDR
VDR> 2V
DATA RETENTION MODE
t
R
CE
V
CC
CY62256
4
Switching C h aracteri sti cs
Over the Operating Range
[5]
Parameter Description
CY62256−55 CY62256−70
UnitMin. Max. Min. Max.
READ CYCLE
t
RC
Read Cycle Time 55 70 ns
t
AA
Address to Data Valid 55 70 ns
t
OHA
Data Hold from Address Change 5 5 ns
t
ACE
CE LOW to Data Valid 55 70 ns
t
DOE
OE LOW to Data Valid 25 35 ns
t
LZOE
OE LOW to Low Z
[6]
5 5 ns
t
HZOE
OE HIGH to High Z
[6, 7]
20 25 ns
t
LZCE
CE LOW to Low Z
[6]
5 5 ns
t
HZCE
CE HIGH to High Z
[6, 7]
20 25 ns
t
PU
CE LOW to Power-Up 0 0 ns
t
PD
CE HIGH to Power-Do wn 55 70 ns
WRITE CYCL E
[8, 9]
t
WC
Write Cycle Time 55 70 ns
t
SCE
CE LOW to Write End 45 60 ns
t
AW
Address Set-Up to Write End 45 60 ns
t
HA
Address Hold from Write End 0 0 ns
t
SA
Address Set-Up to Write Start 0 0 ns
t
PWE
WE Pulse Width 40 50 ns
t
SD
Data Set-Up to Write End 25 30 ns
t
HD
Data Hold from Write End 0 0 ns
t
HZWE
WE LOW to High Z
[6, 7]
20 25 ns
t
LZWE
WE HIGH to Low Z
[6]
5 5 ns
Shaded area contains preliminary information.
Switching Waveform s
Notes:
5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL/IOH
and 100-pF load capac itance .
6. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less tha n t
LZWE
for any gi ven d e vice .
7. t
HZOE
, t
HZCE
, and t
HZWE
are specified wi th CL = 5 pF as in part (b) of A C Test Loads. T rans ition i s measur ed ±500 mV from steady-stat e v oltage .
8. The internal write time of the memory is defined by the overlap of CE
LOW and WE LO W . Both signa ls must be LO W to initi ate a write and eithe r signal can t erminate
a write by go ing HIGH. The data input s et-up an d hold t im ing shoul d be ref e renced to the rising edge of th e sig nal that terminates the write.
9. The minimum write cycle time for write cycle #3 (WE contr oll ed, OE LOW) is the sum of t
HZWE
and t
SD
10. Device is continuously selected. OE, CE = VIL.
11. WE
is HIGH for read c ycle .
ADDRESS
DATA OUT PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
C62256–8
Read Cycle No. 1
[10,11]
Loading...