■ 64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
❐ High-endurance 100 trillion (10
❐ 151-year data retention (See the Data Retention and
14
) read/writes
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A (typ) active current at 100 kHz
❐ 4 A (typ) standby current
■ Voltage operation: V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
DD
2
C)
= 4.5 V to 5.5 V
2
C) EEPROM
The FM24C64B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24C64B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The FM24C64B
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM24C64B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24C64B provides substantial benefits to users of serial
2
C) EEPROM as a hardware drop-in replacement. The device
(I
specifications are guaranteed over an industrial temperature
range of –40 C to +85 C.
Cypress Semiconductor Corporation•198 Champion Court•San Jose, CA 95134-1709•408-943-2600
Document Number: 001-84454 Rev. *C Revised February 19, 2014
Cypress Developer Community .................................18
Technical Support .....................................................18
Document Number: 001-84454 Rev. *C Page 2 of 18
Page 3
FM24C64B
Pinout
WP
SCL
1
2
3
4
5
A0
8
7
6
V
DD
SDA
A1
Top View
not to scale
V
SS
A2
Figure 1. 8-pin SOIC pinout
Pin Definitions
Pin NameI/O TypeDescription
A2-A0InputDevice Select Address 2-0. These pins are used to select one of up to 8 devices of the same type on
the same I
sponding bits contained in the slave address. The address pins are pulled down internally.
SDAInput/Output Serial Data/Address. This is a bi-directional pin for the I
to be wire-AND'd with other devices on the I2C bus. The input buffer incorporates a Schmitt trigger for
noise immunity and the output driver includes slope control for falling edges. An external pull-up resistor
is required.
SCLInputSerial Clock. The serial clock pin for the I
edge, and into the device on the rising edge. The SCL inp ut also incorporates a Schmitt trigger in put
for noise immunity.
WPInputWrite Protect. When tied to V
WP is connected to ground, all addresses are write enabled. This pin is pulled down internally.
V
SS
V
DD
Power supply Ground for the device. Must be connected to the ground of the system.
Power supply Power supply input to the device.
2
C bus. To select the device, the address value on the three pins must match the corre-
2
C interface. It is open-drain and is intended
2
C interface. Data is clocked out of the device on the falling
, addresses in the entire memory map will be write-protected. When
DD
Document Number: 001-84454 Rev. *C Page 3 of 18
Page 4
FM24C64B
Overview
SDA
SCL
DD
0A0A0A
A1
A1
A1
LCSLCSLCS
SDA
ADSADS
PWPWPW
#0
#1
#7
A2
A2
A2
Microcontroller
V
DD
V
DD
V
R
Pmin
= (VDD - VOLmax) / I
OL
R
Pmax
= tr / (0.8473 * Cb)
The FM24C64B is a serial F-RAM memory. The memory array
is logically organized as 8,192 × 8 bits and is accessed using an
industry-standard I
F-RAM is similar to serial (I
between the FM24C64B and a serial (I
2
C interface. The functional operation of the
2
C) EEPROM. The major difference
2
C) EEPROM with the
same pinout is the F-RAM's superior wri te performance, high
endurance, and low power consumption.
Memory Architecture
When accessing the FM24C64B, the user addresses 8K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the I
protocol, which includes a slave address (to distinguish other
non-memory devices) and a two-byte address. The upper 3 bits
of the address range are 'don't care' values. The complete
address of 13 bits specifies each byte address uniquely.
The access time for the memory operation is essentially ze ro,
beyond the time needed for the serial protocol. That is, the
memory is read or written at the speed of the I
2
serial (I
C) EEPROM, it is not necessary to poll the device for a
2
C bus. Unlike a
ready condition because writes occur at bus speed. By the time
2
a new bus transaction can be shifted into the device, a write
operation is complete. This is explained in more detail in the
interface section.
I2C Interface
The FM24C64B employs a bi-directional I2C bus protocol using
few pins or board space. Figure 2 illustrates a typical system
configuration using the FM24C64B in a microcontroller-based
system. The industry standard I
but is described in this section.
By convention, any device that is sending data onto the bus is
the transmitter while the target device for this data is the receiver.
The device that is controlling the bus is the master. The master
C
is responsible for generating the clock signal for all operations.
Any device on the bus that is being controlled i s a slave. The
FM24C64B is always a slave device.
The bus protocol is controlled by transition states in the SDA and
SCL signals. There are four conditions including START, STOP,
data bit, or acknowledge. Figure 3 and Figure 4 illustrates the
signal conditions that specify the four states. Detailed timing
diagrams are shown in the electrical specifications section.
2
C bus is familiar to many users
2
C) nvSRAM
Figure 2. System Configuration using Serial (I
STOP Condition (P)
A STOP condition is indicated when th e bu s ma ste r dri v e s SDA
from LOW to HIGH while the SCL signal is HIGH. All operations
using the FM24C64B should end with a STOP condition. If an
operation is in progress when a STOP is asserted, the operation
will be aborted. The master must have control of SDA in order to
assert a STOP condition.
START Condition (S)
A STAR T condition is indicated when the bus master drives SDA
from HIGH to LOW while the SCL signal is HIGH. All commands
should be preceded by a START condition. An operation in
progress can be aborted by asserting a START condition at any
time. Aborting an operation using the STAR T condition will ready
the FM24C64B for a new operation.
If during operation the power supply drops below the specified
V
to performing another operation.
minimum, the system should issue a START condition prior
DD
Document Number: 001-84454 Rev. *C Page 4 of 18
Page 5
FM24C64B
Figure 3. START and STOP Conditions
full pagewidth
SDA
SCL
P
STOP Condition
SDA
SCL
S
START Condition
handbook, full pagewidth
S
or
P
SDA
S
P
SCL
STOP or
START
condition
S
START
condition
234 - 89
ACK
9
ACK
78
12
MSB
Acknowledgement
signal from slave
Byte complete
Acknowledgement
signal from receiver
1
handbook, full pagewidth
S
START
Condition
9821
Clock pulse for
acknowledgement
No Acknowledge
Acknowledge
DATA OUTPUT
BY MASTER
DATA OUTPUT
BY SLAVE
SCL FROM
MASTER
Figure 4. Data Transfer on the I2C Bus
Data/Address Transfer
All data transfers (including addresses) take place while the SCL
signal is HIGH. Except under the three conditions described
above, the SDA signal should not change while SCL is HIGH.
Acknowledge / No-acknowledge
The acknowledge takes place after the 8th data bit has been
transferred in any transaction. During this state the transmitter
should release the SDA bus to allow the receiver to drive it. The
receiver drives the SDA signal LOW to acknowledge receipt of
the byte. If the receiver does not drive SDA LOW, the condition
is a no-acknowledge and the operation is aborted.
The receiver would fail to acknowledge for two distinct reasons.
First is that a byte transfer fails. In this case, the no-acknowledge
ceases the current operation so that the device can be
addressed again. This allows the last byte to be recovered in the
event of a communication error.
Second and most common, the receiver does not acknowledge
to deliberately end an operation. For example, during a read
operation, the FM24C64B will continue to place data onto the
bus as long as the receiver sends acknowledges (and clocks).
When a read operation is complete and no more data is needed,
the receiver must not acknowledge the last byte. If the receiver
acknowledges the last byte, this will cause the FM24C64B to
attempt to drive the bus on the next clock while the master is
sending a new command such as STOP.
Figure 5. Acknowledge on the I2C Bus
Document Number: 001-84454 Rev. *C Page 5 of 18
Page 6
FM24C64B
Slave Device Address
handbook, halfpage
R/W
LSBMSB
Slave ID
10
1
0
A2A0A1
Device Select
SASlave Address 0Address MSBAData ByteA P
By Master
By F-RAM
StartAddress & Data
Stop
Acknowledge
Address LSBA
The first byte that the FM24C64B expects after a START
condition is the slave address. As shown in Figure 6, the slave
address contains the device type or slave ID, the device select
address bits, and a bit that specifies if the transaction is a read
or a write.
Bits 7-4 are the device type (slave ID) and should be set to 1010b
for the FM24C64B. These bits allow other function types to
reside on the I
2
C bus within an identical address range. Bits 3-1
are the device select address bits. They must match the corresponding value on the external address pins to select the device.
Up to eight FM24C64B devices can reside on the same I
2
C bus
by assigning a different address to each. Bit 0 is the read/write
bit (R/W
). R/W = ‘1’ indicates a read operation and R/W = ‘0’
indicates a write operation.
Figure 6. Memory Slave Device Address
Addressing Overview
After the FM24C64B (as receiver) acknowledges the slave
address, the master can place the memory address on the bus
for a write operation. The address requires two bytes. The
complete 13-bit address is latched internally. Each access
causes the latched address value to be incremented automati cally. The current address is the value that is held in the latch;
either a newly written value or the address following the last
access. The current address will be held for as long as power
remains or until a new value is written. Reads always use the
current address. A random read address can be loaded by
beginning a write operation as explained below.
After transmission of each data byte, just prior to the
acknowledge, the FM24C64B increments the internal address
latch. This allows the next sequential byte to be accessed with
no additional addressing. After the last address (1FFFh) is
reached, the address latch will roll over to 0000h. There is no
limit to the number of bytes that can be accessed with a sin gle
read or write operation.
Data Transfer
After the address bytes have been transmitted, data transfer
between the bus master and the FM24C64B can begin. F or a
read operation the FM24C64B will place 8 data bits on the bus
then wait for an acknowledge from the master. If the
acknowledge occurs, the FM24C64B will transfer the next
sequential byte. If the acknowledge is not sent, the FM24C64B
will end the read operation. For a write operation, the FM24C64B
will accept 8 data bits from the master then send an
acknowledge. All data transfer occurs MSB (most significant bit)
first.
Memory Operation
The FM24C64B is designed to operate in a manner very similar
to other I
result from the higher performance write capability of F-RAM
technology. These improvements result in some differences
between the FM24C64B and a similar configuration EEPROM
during writes. The complete operation for both writes and reads
is explained below.
Write Operation
All writes begin with a slave address, then a memory address.
The bus master indicates a write operation by setting the LSB of
the slave address (R/W bit) to a '0'. After addressing, the bus
master sends each byte of data to the memory and the memory
generates an acknowledge condition. Any number of sequential
bytes may be written. If the end of the address range is reached
internally, the address counter will wrap from 1FFFh to 0000h.
Unlike other nonvolatile memory technologies, there is no
effective write delay with F-RAM. Since the read and write
access times of the underlying memory are the same, the user
experiences no delay through the bus. The entire memory cycle
occurs in less time than a single bus clock. Therefore, any
operation including read or write can occur immediately following
a write. Acknowledge polling, a technique used with EEPROMs
to determine if a write is complete is unnecessary and will always
return a ready condition.
Internally, an actual memory write occurs after the 8th data bit is
transferred. It will be complete before the acknowledge is sent.
Therefore, if the user desires to abort a write without altering the
memory contents, this should be done using START or STOP
condition prior to the 8th data bit. The FM24C64B uses no page
buffering.
The memory array can be write-protected using the WP pin.
Setting the WP pin to a HIGH condition (V
all addresses. The FM24C64B will not acknowledge data bytes
that are written to protected addresses. In addition, the address
counter will not increment if writes are attempted to these
addresses. Setting WP to a LOW state (V
protect. WP is pulled down internally.
Figure 7 and Figure 8 below illustrate a single-byte and
multiple-byte write cycles.
2
C interface memory products. The major differences
) will write-protect
DD
) will disable the write
SS
Document Number: 001-84454 Rev. *C Page 6 of 18
Figure 7. Single-Byte Write
Page 7
FM24C64B
Figure 8. Multi-Byte Write
SASlave Address 0Address MSBAData ByteAP
By Master
By F-RAM
Start
Address & Data
Stop
Acknowledge
Address LSBAData ByteA
SASlave Address 1Data Byte1 P
By Master
By F-RAM
StartAddress
Stop
Acknowledge
No
Acknowledge
Data
SASlave Address 1Data Byte1 P
By Master
By F-RAM
StartAddress
Stop
Acknowledge
No
Acknowledge
Data
Data ByteA
Acknowledge
Read Operation
There are two basic types of read operations. They are current
address read and selective address read. In a current address
read, the FM24C64B uses the internal address latch to supply
the address. In a selective read, the user performs a procedure
to set the address to a specific value.
Current Address & Sequential Read
As mentioned above the FM24C64B uses an internal latch to
supply the address for a read operation. A current address read
uses the existing value in the address latch as a starting place
for the read operation. The system reads from the address
immediately following that of the last operation.
To perform a cu rrent address read, the bus master supplies a
slave address with the LSB set to a '1'. This indicates that a read
operation is requested. After receiving the complete slave
address, the FM24C64B will begin shifting out data from the
current address on the next clock. The current address is the
value held in the internal address latch.
Beginning with the current address, the bus master can read any
number of bytes. Thus, a sequential read is simply a current
Figure 9. Current Address Read
address read with multiple byte transfers. After each byte the
internal address counter will be incremented.
Note Each time the bus master acknowledges a byte, this
indicates that the FM24C64B should read out the next sequential
byte.
There are four ways to properly terminate a read operation.
Failing to properly terminate the read will most likely create a bus
contention as the FM24C64B attempts to read out additional
data onto the bus. The four valid methods are:
1. The bus master issues a no-acknowledge in the 9th clock
cycle and a STOP in the 10th clock cycle. This is illustrated in
the diagrams below. This is preferred.
2. The bus master issues a no-acknowledge in the 9th clock
cycle and a START in the 10th.
3. The bus master issues a STOP in the 9th clock cycle.
4. The bus master issues a START in the 9th clock cycle.
If the internal address reaches 1FFFh, it will wrap around to
0000h on the next read cycle. Figure 9 and Figure 10 below show
the proper operation for current address reads.
Figure 10. Sequential Read
Document Number: 001-84454 Rev. *C Page 7 of 18
Page 8
FM24C64B
Selective (Random) Read
SASlave Address 1Data Byte1 P
By Master
By F-RAM
StartAddress
Stop
No
Acknowledge
Data
SASlave Address 0Address MSBA
Start
Address
Acknowledge
Address LSBA
There is a simple technique that allows a user to select a random
address location as the starting point for a read operation. This
involves using the first three bytes of a write operation to set the
internal address followed by subsequent read operations.
To perform a selective read, the bus master sends out the slave
address with the LSB (R/W) set to 0. This specifies a write
Figure 11. Selective (Random) Read
operation. According to the write protocol, the bus master then
sends the address bytes that are loaded into the internal address
latch. After the FM24C64B acknowledges the address, the bus
master issues a START condition. This simultaneously aborts
the write operation and allows the read command to be issued
with the slave address LSB set to a '1'. The operation is now a
current address read.
Endurance
The FM24C64B internally operates with a read and restore
mechanism. Therefore, endurance cycles are applied for each
read or write cycle. The memory architecture is based on an
array of rows and columns. Each read or write access causes an
endurance cycle for an entire row. In the FM24C64B, a row is 64
bits wide. Every 8-byte boundary marks the beginning of a new
row. Endurance can be optimized by ensuring frequently
accessed data is located in different rows. Regardless, FRAM
read and write endurance is effectively unlimited at the 1MHz I
2
speed. Even at 3000 accesses per second to the same
segment, 10 years time will elapse before 1 trillion endurance
cycles occur.
C
Document Number: 001-84454 Rev. *C Page 8 of 18
Page 9
FM24C64B
Maximum Ratings
Notes
1. Typical values are at 25 °C, V
DD
= V
DD
(typ). Not 100% tested.
2. The input pull-down circuit is strong (40 k) when the input voltage is below V
IL
and weak (1 M) when the input voltage is above VIH.
3. This parameter is guaranteed by design and is not tested.
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55 C to +125 C
Maximum junction temperature ...................................95 C
Supply voltage on V
Input voltage .......... –1.0 V to + 7.0 V and V
relative to VSS .........–1.0 V to +7.0 V
DD
< V
IN
DD
+ 1.0 V
DC voltage applied to outputs
in High-Z state ....................................–0.5 V to V
+ 0.5 V
DD
Transient voltage (< 20 ns) on
any pin to ground potential .................–2.0 V to V
+ 2.0 V
DD
Package power dissipation
capability (T
= 25 °C) .......................................... .. .....1.0 W
A
DC Electrical Characteristics
Surface mount lead soldering
temperature (10 seconds) .......................................+260 C
Electrostatic Discharge Voltage
Human Body Model
Charged Device Model
Machine Model
(AEC-Q100-002 Rev. E) ..................... 4 kV
(AEC-Q100-011 Rev. B) ............. 1.25 kV
(AEC-Q100-003 Rev. E) ............................200 V
Latch-up current .................................................... > 140 mA
* Exception: The "V
IN
< V
+ 1.0 V" restriction does not apply
DD
to the SCL and SDA inputs.
Operating Range
RangeAmbient Temperature (TA)V
Industrial–40 C to +85 C4.5 V to 5.5 V
DD
Over the Operating Range
ParameterDescriptionTest ConditionsMinTyp
V
I
I
I
DD
DD
SB
LI
Power supply4.55.05.5V
or
or
f
= 100 kHz––100A
SCL
f
= 400 kHz––200A
SCL
f
= 1 MHz––400A
SCL
–410A
–1–+1A
Average VDD currentSCL toggling
between
V
– 0.3 V and VSS,
DD
other inputs V
V
– 0.3 V.
DD
SS
Standby currentSCL = SDA = VDD. All
Input leakage current
other inputs V
V
Stop command
DD.
issued.
VSS < VIN < V
SS
DD
(Except WP and A2-A0)
Input leakage current
V
SS
< VIN < V
DD
–1–+100A
(for WP and A2-A0)
I
V
V
V
R
V
LO
IH
IL
OL
[2]
in
HYS
[3]
Output leakage current VSS < VIN < V
DD
Input HIGH voltage0.7 × V
–1–+1A
DD
Input LOW voltage – 0.3–0.3 × V
Output LOW voltageI
Input resistance (WP, A2-A0)For V
Input hysteresis0.05 × V
= 3 mA––0.4V
OL
For V
IN
IN
= V
= V
IL (Max)
IH (Min)
40––k
1––M
DD
[1]
MaxUnit
–VDD + 0.3V
V
DD
––V
Document Number: 001-84454 Rev. *C Page 9 of 18
Page 10
FM24C64B
Data Retention and Endurance
Note
4. This parameter is periodically sampled and not 100% tested.
ParameterDescriptionTest conditionMinMaxUnit
T
DR
Data retentionTA = 85 C10–Years
T
= 75 C38–
A
TA = 65 C151–
NV
C
EnduranceOver operating temperature10
14
–Cycles
Capacitance
Parameter
C
O
C
I
[4]
Output pin capacitance (SDA)TA = 25 C, f = 1 MHz, V
Input pin capacitance6pF
DescriptionTest ConditionsMaxUnit
= VDD(typ)8pF
DD
Thermal Resistance
Parameter
JA
JC
[4]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
DescriptionTest Conditions8-pin SOICUnit
Test conditions follow standard test methods
147C/W
and procedures for measuring thermal
impedance, per EIA / JESD51.
47C/W
Document Number: 001-84454 Rev. *C Page 10 of 18
Page 11
FM24C64B
AC Test Loads and Waveforms
5.5 V
OUTPUT
100 pF
1.7 k
AC Test Conditions
Figure 12. AC Test Loads and Waveforms
Input pulse levels .................................10% and 90% of V
Input rise and fall times .................................................10 ns
Input and output timing reference levels ................ 0.5 × V
5. Test condit ions assume signal transition t ime of 10 ns or l ess, timing reference level s of V
DD
/2, input pulse levels of 0 to VDD(typ), and output loading of the specified
I
OL
and load capacitance shown in Figure 12.
6. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to f
SCL
(max).
7. These parameters are guaranteed by design and are not tested.
Over the Operating Range
Alt.
Parameter
[6]
f
SCL
t
SU; STA
t
HD;STA
t
LOW
t
HIGH
t
SU;DAT
t
HD;DAT
t
DH
[7]
t
R
[7]
t
F
t
SU;STO
t
AA
t
BUF
t
SP
[5]
Parameter
t
SU;DATA
t
HD;DATA
t
r
t
f
t
VD;DATA
SCL clock frequency–0.1–0.4–1.0MHz
Start condition setup for repeated Start4.7–0.6–0.25–s
Start condition hold time4.0–0.6–0.25–s
Clock LOW period 4.7–1.3–0.6–s
Clock HIGH period 4.0–0.6–0.4–s
Data in setup 250–100–100–ns
Data in hold 0–0–0–ns
Data output hold (from SCL @ VIL)0–0–0–ns
Input rise time–1000–300–300ns
Input fall time–300–300–100ns
STOP condition setup4.0–0.6–0.25–s
SCL LOW to SDA Data Out Valid–3–0.9–0.55s
Bus free before new transmission4.7–1.3–0.5–s
Noise suppression time constant on SCL, SDA–50–50–50ns
DescriptionMinMaxMinMaxMinMaxUnit
Figure 13. Read Bus Timing Diagram
Figure 14. Write Bus Timing Diagram
Document Number: 001-84454 Rev. *C Page 12 of 18
Page 13
FM24C64B
Power Cycle Timing
SDA
~
~
t
PU
t
VRt
VF
V
DD
V
DD(min)
t
PD
V
DD(min)
I C START
2
I C STOP
2
Note
8. Slope measured at any point on the V
DD
waveform.
9. Guaranteed by design.
Over the Operating Range
ParameterDescriptionMinMaxUnit
t
PU
t
PD
t
VR
t
VF
[8, 9]
[8, 9]
Power-up VDD(min) to first access (START condition)10–ms
Last access (STOP condition) to power-down (VDD(min))0–µs
VDD power-up ramp rate30–µs/V
VDD power-down ramp rate30–µs/V
Figure 15. Power Cycle Timing
~
~
Document Number: 001-84454 Rev. *C Page 13 of 18
Page 14
FM24C64B
Ordering Information
Option:
Blank = Standard; T = Tape and Reel
Package Type: G = 8-pin SOIC
Die Revision = B
Density: 64 = 64-kbit
Voltage: C = 4.5 V to 5.5 V
I
ACKAcknowledge
CMOSComplementary Metal Oxide Semiconductor
EIAElectronic Industries Alliance
2
CInter-Integrated Circuit
I
I/OInput/Output
JEDECJoin t Electron De vices Engineering Council
LSBLeast Significant Bit
MSBMost Significant Bit
NACKNo Acknowledge
RoHSRestriction of Hazardous Substances
R/W
SCLSerial Clock Line
SDASerial Data Access
SOICSmall Outline Integrated Circuit
WPWrite Protect
Read/Write
Units of Measure
SymbolUnit of Measure
°Cdegree Celsius
Hzhertz
Kb1024 bit
kHzkilohertz
kkilohm
MHzmegahertz
Mmegaohm
Document Title: FM24C64B, 64-Kbit (8 K × 8) Serial (I2C) F-RAM
Document Number: 001-84454
Rev.ECN No.
**390220402/25/2013GVCHNew spec
*A399666905/13/2013GVCHAdded Appendix A - Errata for FM24C64B
*B404546906/30/2013GVCHAll errata items are fixed and the errata is removed
*C428341802/19/2014GVCHConverted to Cypress standard format
Submission
Date
Orig. of
Change
Description of Change
Changed endurance value from 10
Updated Maximum Ratings tabl e
- Removed Moisture Sensitivity Level (MSL)
- Added junction temperature and latch up current
Added Input leakage current (I
Updated Data Retention and Endurance table
Added Thermal Resistance table
Removed Package Marking Scheme (top mark)
Removed Ramtron revision history
Completing Sunset Review
12
to 1014 cycles
) for WP and A2-A0
LI
Document Number: 001-84454 Rev. *C Page 17 of 18
Page 18
FM24C64B
Sales, Solutions, and Legal Information
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Document Number: 001-84454 Rev. *C Revi sed February 19, 2014Page 18 of 18
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