CYPRESS CYM1730 User Manual
64K x 24 Static RAM Module
CYM1730
1CYM173 0
查询CYM1730供应商
Features
• High-density 1.5M SRAM module
• High-speed CMOS SRAMs
—Access time of 25 ns
• 56-pin, 0.5-inch-high ZIP package
• Low active power
—2.8W (max. for t
= 25 ns)
AA
• SMD technology
• TTL-compatible inputs and outputs
• Commercial temperature range
• Small PCB footprint
—1.05 sq. in.
Functional Description
The CYM1730 is a high-performance 1.5M static RAM module
organized as 64K words by 24 bi ts. This module is c onstructed
Logic Block D iagram
A
0–A14
A
15
CS
OE
WE
DECODER
1 OF 2
15
32K x 8
SRAM
32K x 8
SRAM
32K x 8
SRAM
using six 32K x 8 static RAMs in SOJ packages mounted onto
an epoxy laminate board with pins.
Writing to the device is accomplished when the chip select
(CS
) and write enable (WE) inputs are both LOW. Data on the
input/output pins (I/O
into the memory location specified on the address pins (A
through I/O23) of the device is writ ten
0
through A15).
Reading the device is accomplished by taking the chip select
) and output enable (OE) LOW while write enable (WE)
(CS
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the input/output pins.
The input/output pins remain in a high-impedance state unle ss
the module is selected, outputs are enabled, and write enable
is HIGH.
Pin Configuration
ZIP
Top View
V
CC
1
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
I/O
I/O
I/O
I/O
GND
A
0
A
2
A
4
A
6
CS
NC
I/O
I/O
I/O
I/O
GND
WE
A
8
A
10
A
12
A
14
GND
I/O
I/O
I/O
I/O
V
CC
1730-2
0
2
4
6
8
10
12
14
16
18
20
22
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
32K x 8
SRAM
32K x 8
SRAM
32K x 8
SRAM
8
8
8
I/O16–I/O
I/O8–I/O
–I/O
I/O
0
1730-1
V
CC
I/O
1
I/O
3
I/O
5
I/O
7
GND
A
1
A
3
A
23
5
A
7
NC
GND
I/O
9
I/O
11
I/O
13
I/O
15
NC
OE
A
15
7
A
A
A
GND
I/O
I/O
I/O
I/O
V
CC
9
11
13
15
17
19
21
23
0
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
July 1991 – Revised January 1995
CYM1730
Selection G uide
1730–25 1730–30 1730–35
Maximum Access Time (ns) 25 30 35
Maximum Operati ng Current (mA) 510 510 510
Maximum Standby Current (mA) 180 180 180
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
DC Input Voltage ................................. .......... –0.5V to +7.0V
lines, not tested.)
Storage Temperature .................................–55°C to +125°C
Ambient Temperature with
Power Applied...............................................–10°C to +85°C
Supply Voltage to Ground Potential............... –0.5V to +7.0V
Operating Range
Ambient
Range
Commercial 0°C to +70°C 5V ± 10%
Temperature
V
CC
DC Voltage Applied to Outputs
in High Z State ............................................... –0.5V to +7.0V
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
V
V
V
I
IX
I
OZ
I
CC
I
SB1
I
SB2
OH
OL
IH
IL
Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 V
Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 V
Input HIGH Voltage 2.2 VCC + 0.3 V
Input LOW Voltage –0.3 0.8 V
Input Load Current GND < VI < V
CC
Output Leakage Current GND < VO < VCC,
–20 +20 µA
–10 +10 µA
Output Disabled
VCC Operating Supply Current VCC = Max., I
Automatic CS Power-Down
[1]
Current
Automatic CS Power-Down
[1]
Current
Max. VCC, CS > VIH,
Min. Duty Cycle = 100%
Max. VCC, CS > VCC – 0.2V,
V
> VCC – 0.2V or VIN < 0.2V
IN
= 0 mA, CS < V
OUT
IL
510 mA
180 mA
180 mA
Capacitance
[2]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Notes:
1. A pull-up resistor to V
2. Tested on a sample basis.
Input Capacitance TA = 25°C, f = 1 MHz,
V
= 5.0V
Output Capacitance 20 pF
on the CS input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
CC
CC
50 pF
2
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