Slim 300-mil or standard 600-mil packaging available
•
5V ±10% VCC, commercial and military
•
TTL-compatible I/O
•
Direct replacement for bipolar PROMs
•
Capable of withstanding >2001V static discharge
Functional Description
CY7C292A/CY7C293A
2K x 8 Reprogrammable PROM
identical, bu t are pac ka ged in 300 -mil (7C29 1A, 7C293A) an d
600-mil wide plastic and hermetic DIP packages (7C292A).
The CY7C293A has an automatic power down feature which
reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an
erasure window; when exposed to UV light the PROM is
erased and can then be reprogr ammed. The memo ry cells utilize prov en EPR OM floatin g-gate techno log y and b yte-wide intelligent programming algorithms.
The CY7C291A, CY7C292A, and CY7C293A are plug-in replacements for bipolar devices and offer the advantages of
lower power, reprogrammability, superior performance and
programming yield. The EPROM cell requires only 12.5V for
the supervoltage and low current requirements allow for gang
programming . The EPROM cells allow for each memory location to be tested 100%, as each location is written into , erased,
and repeatedly exercised prior to encapsulation. Each PROM
is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits.
A read is accomplished by placing an active LOW signal on
, and active HIGH signals on CS2 and CS3. The contents
CS
1
of the memory location addressed by the address line (A
) will become available on the output lines (O0 − O7).
A
10
−
0
The CY7C291A, CY7C2 92A, an d CY7C2 93A are high-pe rf ormance 2K-word b y 8-bit CMOS PR OMs . The y are functi onally
LogicBlock DiagramPin Configurations
A
CS
CS
CS
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
10
1
2
3
ROW
ADDRESS
ADDRESS
DECODER
COLUMN
ADDRESS
PROGRAM-
MABLE
ARRAY
POWER
DOWN
7C293A
MULTI-
PLEXER
O
7
O
6
O
5
O
4
O
3
O
2
O
1
O
0
C291A-1
GND
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
DIP
Top View
1
2
3
7C291A
7C292A
4
7C293A
5
6
7
8
9
10
1114
1213
24
23
22
21
20
19
18
17
16
15
C291A-2
V
A
A
A
CS
CS
CS
O
O
O
O
O
LCC/PLCC (Opaque Only)
Top View
CC
8
9
10
1
2
3
7
6
5
4
3
NC
5
7
A
A6A
321 27
4
A
5
4
A
6
7C291A
3
A
2
7
A
1
8
A
9
0
7C293A
10
O
11
0
1314151617
12
2
1
O
O
GND
Window available on
7C291A and7C293A
only.
NC
NC
9
CC
V
A8A
28
26
A
25
10
CS
24
1
CS
23
2
CS
3
22
21
NC
O
20
7
19
O
6
18
5
3
O4O
O
C291A-3
Cypress Semiconductor Corporation
•3901 North First Street•San Jose•CA 95134•408-943-2600
March 1986 – Revised May 1993
CY7C291A
CY7C292A/CY7C293A
Selection Guide
7C291A-25
7C292A-25
7C293A-25
7C291A-20
7C292A-20
7C293A-20
7C291AL-25
7C292AL-25
7C293AL-25
Maximum Access Time (ns)20253550
Maximum Operating
Current (mA)
StandardCommercial120909090
Military1209090
LCommercial606060
Standby Current (mA)
7C293A Only
Maximum Ratings
(Above wh ich the usefu l life may be impai red. F or us er guid e-
Commercial40303030
Military404040
Latch-Up Current.....................................................>200 mA
Operating Range
lines, not tested.)
Storage Temperature ......................................−65°C to+150°C
Ambient Temperature with
Po wer Applied...................................................−55°C to+125°C
Supply Voltage to Ground Potential...................−0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State......................................................−0.5V to+7.0V
DC Input Voltage .................................................−3.0V to +7.0V
DC Program Voltage.....................................................13.0V