Cypress CY7C1563V18, CY7C1565V18, CY7C1561V18, CY7C1576V18 User Manual

72-Mbit QDR™-II+ SRAM 4-Word Burst

Architecture (2.5 Cycle Read Latency)

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Features

Note

1. The QDR consortium specification for V

DDQ

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to VDD.

Configurations

■ Separate independent read and write data ports ❐ Supports concurrent transactions

■ 400 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces on both read and write ports

(data transferred at 800 MHz) at 400 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ Available in x8, x9, x18, and x36 configurations

■ Full data coherency, providing most current data

■ Core V

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

= 1.8V ± 0.1V; IO V

= 1.4V to V

DDQ

[1]

With Read Cycle Latency of 2.5 cycles:

CY7C1561V18 – 8M x 8 CY7C1576V18 – 8M x 9 CY7C1563V18 – 4M x 18 CY7C1565V18 – 2M x 36

Functional Description

The CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture. Similar to QDR-II architecture, QDR-II+ SRAMs consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common IO devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1561V18), 9-bit words (CY7C1576V18), 18-bit words (CY7C1563V18), or 36-bit words (CY7C1565V18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K fying system design by eliminating bus “turn-arounds”.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K registers controlled by the K or K conducted with on-chip synchronous self-timed write circuitry.

), memory bandwidth is maximized while simpli-

input clocks. All data outputs pass through output

input clocks. Writes are

Selection Guide

Maximum Operating Frequency 400 375 333 300 MHz Maximum Operating Current x8 1400 1300 1200 1100 mA

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-05384 Rev. *F Revised March 6, 2008

Description 400 MHz 375 MHz 333 MHz 300 MHz Unit

x9 1400 1300 1200 1100 x18 1400 1300 1200 1100 x36 1400 1300 1200 1100

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Logic Block Diagram (CY7C1561V18)

2M x 8 Array

CLK

(20:0)

Gen.

Control

Logic

Address Register

[7:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

NWS

[1:0]

REF

Write Add. Decode

Write

Reg

(20:0)

2M x 8 Array

DOFF

[7:0]

QVLD

Write

Reg

Write

Reg

Write

Reg

2M x 9 Array

CLK

(20:0)

Gen.

Control

Logic

Address Register

[8:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

BWS

[0]

REF

Write Add. Decode

Write

Reg

(20:0)

2M x 9 Array

DOFF

[8:0]

QVLD

Write

Reg

Write

Reg

Write

Reg

Logic Block Diagram (CY7C1576V18)

Document Number: 001-05384 Rev. *F Page 2 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Logic Block Diagram (CY7C1563V18)

1M x 18 Array

CLK

(19:0)

Gen.

Control

Logic

Address Register

[17:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address

Reg.

BWS

[1:0]

REF

Write Add. Decode

Write

Reg

(19:0)

1M x 18 Array

DOFF

[17:0]

QVLD

Write

Reg

Write

Reg

Write

Reg

512K x 36 Array

CLK

(18:0)

Gen.

Control

Logic

Address Register

[35:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

144

BWS

[3:0]

REF

Write Add. Decode

Write

Reg

(18:0)

512K x 36 Array

DOFF

[35:0]

QVLD

Write

Reg

Write

Reg

Write

Reg

Logic Block Diagram (CY7C1565V18)

Document Number: 001-05384 Rev. *F Page 3 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Pin Configuration

Note

2. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.

The pin configuration for CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1561V18 (8M x 8)

1 2 3 4 5 6 7 8 9 10 11

A CQ AAWPSNWS

B NC NC NC A NC/288M K NWS C NC NC NC V D NC D4 NC V E NC NC Q4 V F NC NC NC V G NC D5 Q5 V H DOFF V

REF

DDQ

J NC NC NC V K NC NC NC V L NC Q6 D6 V M NC NC NC V N NC D7 NC V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC NC D3

AAAVSSNC NC NC

P NC NC Q7 A A QVLD A A NC NC NC R TDOTCKAAANCAAATMSTDI

K NC/144M RPS AACQ

ANCNCQ3

DDQ

[2]

NC NC NC NC D2 Q2 NC NC NC NC NC NC

DDQ

REF

NC Q1 D1 NC NC NC NC NC Q0 NC NC D0

CY7C1576V18 (8M x 9)

1 2 3 4 5 6 7 8 9 10 11

A CQ AAWPSNC K NC/144M RPS AACQ B NC NC NC A NC/288M K BWS C NC NC NC V D NC D5 NC V E NC NC Q5 V F NC NC NC V G NC D6 Q6 V H DOFF V

REF

DDQ

J NC NC NC V K NC NC NC V L NC Q7 D7 V M NC NC NC V N NC D8 NC V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC NC D4

AAAVSSNC NC NC

ANCNCQ4

V V V V V V V

DDQ DDQ DDQ DDQ DDQ DDQ DDQ

NC NC NC NC D3 Q3 NC NC NC NC NC NC

DDQ

REF

NC Q2 D2 NC NC NC NC NC Q1 NC NC D1

P NC NC Q8 A A QVLD A A NC D0 Q0 R TDOTCKAAANCAAATMSTDI

Document Number: 001-05384 Rev. *F Page 4 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Pin Configuration (continued)

The pin configuration for CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1563V18 (4M x 18)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/144M A WPS BWS

B NC Q9 D9 A NC K BWS C NC NC D10 V D NC D11 Q10 V E NC NC Q11 V F NC Q12 D12 V G NC D13 Q13 V H DOFF V

REF

DDQ

J NC NC D14 V K NC NC Q14 V L NC Q15 D15 V M NC NC D16 V N NC D17 Q16 V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC Q7 D8

AAAVSSNC NC D1

P NC NC Q17 A A QVLD A A NC D0 Q0 R TDOTCKAAANCAAATMSTDI

K NC/288M RPS AACQ

ANCNCQ8

DDQ

[2]

NC NC D7 NC D6 Q6 NC NC Q5 NC NC D5

DDQ

REF

NC Q4 D4 NC D3 Q3 NC NC Q2 NC Q1 D2

CY7C1565V18 (2M x 36)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/288M A WPS BWS B Q27 Q18 D18 A BWS C D27 Q28 D19 V D D28 D20 Q19 V E Q29 D29 Q20 V F Q30 Q21 D21 V G D30 D22 Q22 V H DOFF V

REF

DDQ

J D31 Q31 D23 V K Q32 D32 Q23 V L Q33 Q24 D24 V M D33 Q34 D25 V N D34 D26 Q25 V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSD16 Q7 D8

AAAVSSQ10 D9 D1

2 3

K BWS

RPS A NC/144M CQ

KBWS0AD17Q17Q8

V V V V V V V

DDQ DDQ DDQ DDQ DDQ DDQ DDQ

Q16 D15 D7 Q15 D6 Q6 D14 Q14 Q5 Q13 D13 D5

DDQ

REF

D12 Q4 D4 Q12 D3 Q3 D11 Q11 Q2 D10 Q1 D2

P Q35 D35 Q26 A A QVLD A A Q9 D0 Q0 R TDOTCKAAANCAAATMSTDI

Document Number: 001-05384 Rev. *F Page 5 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Pin Definitions

Pin Name IO Pin Description

[x:0]

Input-

Synchronous

WPS Input-

Synchronous

NWS NWS1,

BWS BWS BWS BWS

2 3

Input-

Synchronous

Input-

Synchronous

A Input-

Synchronous

[x:0]

Outputs-

Synchronous

RPS Input-

Synchronous

Data Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. CY7C1561V18 − D CY7C1576V18 − D

CY7C1563V18 − D CY7C1565V18 − D

[7:0] [8:0] [17:0] [35:0]

Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a write operation is initiated. Deasserting deselects the Write Port. Deselecting the write port ignores D

[x:0]

Nibble Write Select 0, 1− Active LOW (CY7C1561V18 Only). Sampled on the rising edge of the K and K

clocks when write operations are active. Used to select which nibble is written into the device during the current portion of the write operations. NWS All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

controls D

and NWS1 controls D

[3:0]

[7:4]

ignores the corresponding nibble of data and it is not written into the device. Byte Write Select 0, 1, 2, and 3 − Active LOW . Sampled on the rising edge of the K and K clocks when

write operations are active. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1576V18 − BWS CY7C1563V18 − BWS0 controls D CY7C1565V18 − BWS0 controls D BWS

controls D

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

controls D

and BWS3 controls D

[26:18]

[8:0]

and BWS1 controls D

[8:0]

, BWS1 controls D

[8:0]

[35:27].

[17:9]

[17:9].

ignores the corresponding byte of data and it is not written into the device. Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These

address inputs are multiplexed for both read and write operations. Internally, the device is organized as 8M x 8 (4 arrays each of 2M x 8) for CY7C1561V18, 8M x 9 (4 arrays each of 2M x 9) for CY7C1576V18, 4M x 18 (4 arrays each of 1M x 18) for CY7C1563V18 and 2M x 36 (4 arrays each of 512K x 36) for CY7C1565V18. Therefore, only 21 address inputs are needed to access the entire memory array of CY7C1561V18 and CY7C1576V18, 20 address inputs for CY7C1563V18, and 19 address inputs for CY7C1565V18. These inputs are ignored when the appropriate port is deselected.

Data Output Signals. These pins drive out the requested data during a read operation. Valid data is driven out on the rising edge of both the K and K port, Q CY7C1561V18 − Q CY7C1576V18 − Q CY7C1563V18 − Q CY7C1565V18 − Q

are automatically tri-stated.

[x:0]

[7:0] [8:0] [17:0] [35:0]

clocks during read operations. On deselecting the read

Read Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active, a read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tri-stated following the next rising edge of the K

clock. Each read access consists of a burst of four sequential transfers.

QVLD Valid output

Valid Outp ut Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ

indicator

K Input-

Clock

InputClock

Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q

. All accesses are initiated on the risin g ed ge of K.

[x:0]

Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q

[x:0]

CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock

(K) of the QDR-II+. The timings for the echo clocks are shown in the Switching Characteristics on page 23.

Echo Clock Synchronous Echo Clock Outputs . This is a free running clock and is synchronized to the input clock

) of the QDR-II+. The timings for the echo clocks are shown in the Switching Characteristics on page 23.

Document Number: 001-05384 Rev. *F Page 6 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Pin Definitions (continued)

Pin Name IO Pin Description

ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

impedance. CQ, CQ between ZQ and ground. Alternately, this pin can be connected directly to V minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

DOFF Input DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device.The timings

in the DLL turned off operation are different from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in QDR-I mode when the DLL is turned off. In this mode, the device can b e operated at a frequency o f up to 167 MHz with QDR-I timing.

TDO Output TDO for JTAG. TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level.

NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level.

and Q

output impedance are set to 0.2 x RQ, where RQ is a resistor connected

[x:0]

, which enables the

DDQ

V V V

REF

DD SS DDQ

Input-

Reference

Power Supply Power Supply Inputs to the Core of the Device.

Ground Ground for the Device.

Power Supply Power Supply Inputs for the Outputs of the Device.

Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs as well as AC measurement points.

Document Number: 001-05384 Rev. *F Page 7 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Functional Overview

The CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II+ completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1561V18, four 9-bit data transfers in the case of CY7C1576V18, four 18-bit data transfers in the case of CY7C1563V18, and four 36-bit data transfers in the case of CY7C1565V18, in two clock cycles.

Accesses for both ports are initiated on the positive input clock (K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K

All synchronous data inputs (D registers controlled by the input clocks (K and K synchronous data outputs (Q registers controlled by the rising edge of the input clocks (K and

[x:0]

) outputs pass through output

[x:0]

K) as well. All synchronous control (RPS

, WPS, NWS pass through input registers controlled by the rising edge of the input clocks (K and K

CY7C1563V18 is described in the following sections. The same basic descriptions apply to CY7C1561V18, CY7C1576V18, and CY7C1565V18.

Read Operations

The CY7C1563V18 is organized internally as four arrays of 1M x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to address inputs are stored in the read address register. Following the next two K sponding lowest order 18-bit word of data is driven onto the

using K as the output timing reference. On the su bse-

[17:0]

quent rising edge of K, the next 18-bit data word is driven onto the Q have been driven out onto Q

0.45 ns from the rising edge of the input clock (K or K maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the input clocks (K and K

When the read port is deselected, the CY7C1563V18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the negative input clock (K

. This process continues until all four 18-bit data words

[17:0]

. The requested data is valid

[17:0]

) inputs pass through input

). All

[x:0]

, BWS

[x:0]

) inputs

clock rise, the corre-

). To

). This enables for a

seamless transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D the lower 18-bit write data register, provided BWS asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D into the write data register, provided BWS active. This process continues for one more cycle until four 18-bit

is latched and stored into

[17:0]

[1:0]

is also stored

[17:0]

are both asserted

[1:0]

are both

words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1563V18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS

, which are sampled with each set of 18-bit data words.

BWS

Asserting the appropriate Byte Write Select input during the data

and

portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a Byte write operation.

Concurrent Transactions

The read and write ports on the CY7C1563V18 operates completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise.

Read access and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports are deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations cannot be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (since write operations cannot be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alternating read or write operations being initiated, with the first access being a read.

Document Number: 001-05384 Rev. *F Page 8 of 28

[+] Feedback [+] Feedback

CY7C1561V18, CY7C1576V18 CY7C1563V18, CY7C1565V18

Depth Expansion

The CY7C1563V18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed prior to the device being deselected.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V driver impedance. The value of RQ must be 5X the value of the

to allow the SRAM to adjust its output

intended line impedance driven by the SRAM, the allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω output impedance is adjusted every 1024 cycles upon power up

, with V

=1.5V. The

DDQ

to account for drifts in supply voltage and temperature.

Echo Clocks

Echo clocks are provided on the QDR-II+ to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR-II+. CQ is referenced with respect to K and CQ is referenced with respect to K

. These are free-running clocks and are synchronized to the input clock of the QDR-II+. The timing for the echo clocks are shown in Switching Characteristics on page 23.

Application Example

Valid Data Indicator (QVLD)

QVLD is provided on the QDR-II+ to simplify data capture on high speed systems. The QVLD is generated by the QDR-II+ device along with data output. This signal is also edge-aligned with the echo clock and follows the timing of any data pin. This signal is asserted half a cycle before valid data arrives.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in QDR-I mode (with 1.0 cycle latency and a longer access time ). For more information, refer to the application note, “DLL Considerations in QDRII/DDRII/QDRII+/DDRII+”. The DLL can also be reset by slowing or stopping the input clocks K and K minimum of 30ns. However, it is not necessary to reset the DLL to lock to the desired frequency. During Power up, when the DOFF

is tied HIGH, the DLL is locked after 2048 cycles of stable

clock.

for a

Figure 1 shows four QDR-II+ used in an application.

Figure 1. Application Example

SRAM #1

WPS

RPS

DATA OUT

BUS MASTER

(CPU or ASIC)

CLKIN/CLKIN

DATA IN

Address

RPS WPS BWS

Source K Source K

BWS

CQ/CQ

RQ = 250ohms

D A

SRAM #4

WPS

RPS

R = 50ohms, Vt = V /2

BWS

CQ/CQ

DDQ

RQ = 250ohms

Document Number: 001-05384 Rev. *F Page 9 of 28

[+] Feedback [+] Feedback

+ 19 hidden pages

Cypress CY7C1563V18, CY7C1565V18, CY7C1561V18, CY7C1576V18 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

Configurations

Functional Description

Selection Guide

Logic Block Diagram (CY7C1561V18)

Logic Block Diagram (CY7C1576V18)

Logic Block Diagram (CY7C1563V18)

Logic Block Diagram (CY7C1565V18)

Pin Configuration

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

Pin Definitions

Functional Overview

Read Operations

Write Operations

Byte Write Operations

Concurrent Transactions

Depth Expansion

Programmable Impedance

Echo Clocks

Application Example

Valid Data Indicator (QVLD)