Cypress CY7C1426BV18, CY7C1415BV18, CY7C1413BV18, CY7C1411BV18 User Manual

36-Mbit QDR™-II SRAM 4-Word

Burst Architecture

CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Features

Configurations

■ Separate independent read and write data ports ❐ Supports concurrent transactions

■ 300 MHz clock for high bandwidth

■ 4-word burst for reducing address bus frequency

■ Double Data Rate (DDR) interfaces on both read and write ports

(data transferred at 600 MHz) at 300 MHz

■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

■ Single multiplexed address input bus latches address inputs

for both read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR-II operates with 1.5 cycle read latency when DLL is

enabled

■ Operates as a QDR-I device with 1 cycle read latency in DLL

off mode

■ Available in x 8, x 9, x 18, and x 36 configurations

■ Full data coherency, providing most current data

■ Core V

■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ Variable drive HSTL output buffers

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

= 1.8 (±0.1V); IO V

= 1.4V to V

DDQ

CY7C1411BV18 – 4M x 8 CY7C1426BV18 – 4M x 9 CY7C1413BV18 – 2M x 18 CY7C1415BV18 – 1M x 36

Functional Description

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support the read operations and the write port has dedicated data inputs to support the write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1411BV18), 9-bit words (CY7C1426BV18), 18-bit words (CY7C1413BV18), or 36-bit words (CY7C1415BV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K

), memory bandwidth is maximized while simplifying

and C system design by eliminating bus “turn-arounds.”

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K registers controlled by the C or C

input clocks. All data outputs pass through output

(or K or K in a single clock domain) input clocks. Writes are conducted with on chip synchronous self-timed write circuitry.

and C

Selection Guide

Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit

Maximum Operating Frequency 300 278 250 200 167 MHz Maximum Operating Current x8 885 815 745 620 535 mA

x9 900 830 760 620 535 x18 940 865 790 655 565 x36 1040 950 870 715 615

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-07037 Rev. *D Revised June 16, 2008

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Logic Block Diagram (CY7C1411BV18)

1M x 8 Array

CLK

(19:0)

Gen.

Control

Logic

Address Register

[7:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

NWS

[1:0]

REF

Write Add. Decode

Write

Reg

(20:0)

DOFF

[7:0]

Write

Reg

Write

Reg

Write

Reg

1M x 8 Array

CLK

(19:0)

Gen.

Control

Logic

Address Register

[8:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

BWS

[0]

REF

Write Add. Decode

Write

Reg

(19:0)

DOFF

[8:0]

Write

Reg

Write

Reg

Write

Reg

1M x 9 Array

Logic Block Diagram (CY7C1426BV18)

Document Number: 001-07037 Rev. *D Page 2 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Logic Block Diagram (CY7C1413BV18)

CLK

(18:0)

Gen.

Control

Logic

Address Register

[17:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

BWS

[1:0]

REF

Write Add. Decode

Write

Reg

(18:0)

DOFF

[17:0]

Write

Reg

Write

Reg

Write

Reg

512K x 18 Array

256K x 36 Array

CLK

(17:0)

Gen.

Control

Logic

Address Register

[35:0]

Read Add. Decode

Read Data Reg.

RPS

WPS

Control

Logic

Address Register

Reg.

144

BWS

[3:0]

REF

Write Add. Decode

Write

Reg

(17:0)

256K x 36 Array

DOFF

[35:0]

Write

Reg

Write

Reg

Write

Reg

Logic Block Diagram (CY7C1415BV18)

Document Number: 001-07037 Rev. *D Page 3 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Pin Configuration

Note

1. NC/72M, NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.

The pin configuration for CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1411BV18 (4M x 8)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/72M A WPS NWS

B NC NC NC A NC/288M K NWS C NC NC NC V D NC D4 NC V E NC NC Q4 V F NC NC NC V

G NC D5 Q5 V

H DOFF V

REF

DDQ

J NC NC NC V K NC NC NC V L NC Q6 D6 V

M NC NC NC V

N NC D7 NC V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC NC D3

AAAVSSNC NC NC

P NC NC Q7 A A C A A NC NC NC R TDO TCK A A A C AAATMSTDI

K NC/144M RPS AACQ

ANCNCQ3

DDQ

[1]

NC NC NC NC D2 Q2 NC NC NC NC NC NC

DDQ

REF

NC Q1 D1 NC NC NC NC NC Q0 NC NC D0

CY7C1426BV18 (4M x 9)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/72M A WPS NC K NC/144M RPS AACQ B NC NC NC A NC/288M K BWS C NC NC NC V D NC D5 NC V E NC NC Q5 V F NC NC NC V

G NC D6 Q6 V

H DOFF V

REF

DDQ

J NC NC NC V K NC NC NC V L NC Q7 D7 V

M NC NC NC V

N NC D8 NC V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC NC D4

AAAVSSNC NC NC

ANCNCQ4

V V V V V V V

DDQ DDQ DDQ DDQ DDQ DDQ DDQ

NC NC NC NC D3 Q3 NC NC NC NC NC NC

DDQ

REF

NC Q2 D2 NC NC NC NC NC Q1 NC NC D1

P NC NC Q8 A A C A A NC D0 Q0 R TDO TCK A A A C AAATMSTDI

Document Number: 001-07037 Rev. *D Page 4 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Pin Configuration (continued)

The pin configuration for CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 follow.

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1413BV18 (2M x 18)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/144M A WPS BWS

B NC Q9 D9 A NC K BWS C NC NC D10 V D NC D11 Q10 V E NC NC Q11 V F NC Q12 D12 V

G NC D13 Q13 V

H DOFF V

REF

DDQ

J NC NC D14 V K NC NC Q14 V L NC Q15 D15 V

M NC NC D16 V

N NC D17 Q16 V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSNC Q7 D8

AAAVSSNC NC D1

P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C AAATMSTDI

K NC/288M RPS A NC/72M CQ

ANCNCQ8

DDQ

[1]

NC NC D7 NC D6 Q6 NC NC Q5 NC NC D5

DDQ

REF

NC Q4 D4 NC D3 Q3 NC NC Q2 NC Q1 D2

CY7C1415BV18 (1M x 36)

1 2 3 4 5 6 7 8 9 10 11

A CQ NC/288M NC/72M WPS BWS B Q27 Q18 D18 A BWS C D27 Q28 D19 V D D28 D20 Q19 V E Q29 D29 Q20 V F Q30 Q21 D21 V

G D30 D22 Q22 V

H DOFF V

REF

DDQ

J D31 Q31 D23 V K Q32 D32 Q23 V L Q33 Q24 D24 V

M D33 Q34 D25 V

N D34 D26 Q25 V

SS DDQ DDQ DDQ DDQ DDQ DDQ DDQ

ANCAVSSD16 Q7 D8

AAAVSSQ10 D9 D1

2 3

K BWS

RPS A NC/144M CQ

KBWS0AD17Q17Q8

V V V V V V V

DDQ DDQ DDQ DDQ DDQ DDQ DDQ

Q16 D15 D7 Q15 D6 Q6 D14 Q14 Q5 Q13 D13 D5

DDQ

REF

D12 Q4 D4 Q12 D3 Q3 D11 Q11 Q2 D10 Q1 D2

P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C AAATMSTDI

Document Number: 001-07037 Rev. *D Page 5 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Pin Definitions

Pin Name IO Pin Description

[x:0]

WPS Input-

NWS

BWS0,

BWS

A Input-

[x:0]

RPS Input-

C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C

K Input Clock Positive Input Clock In put. The rising edge of K is used to capture synchronous inputs to the device

Input-

Synchronous

Data Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. CY7C1411BV18 − D CY7C1426BV18 − D CY7C1413BV18 − D CY7C1415BV18 − D

[7:0] [8:0] [17:0] [35:0]

Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a

Synchronous

Input-

Synchronous

Input-

Synchronous

write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D

[x:0]

Nibble Write Select 0, 1 − Active LOW (CY7C1411BV18 Only). Sampled on the rising edge of the K and K

clocks

when write operations are active the current portion of the write operations. All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select ignores the corresponding nibble of data and it is not written into the device

. Used to select which nibble is written into the device

NWS

controls D

and NWS1 controls D

[3:0]

[7:4]

during

Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks when write operations are active. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1426BV18 − BWS CY7C1413BV18 − BWS0 controls D CY7C1415BV18 − BWS0 controls D D

[35:27].

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device

controls D

[8:0]

and BWS1 controls D

[8:0]

, BWS1 controls D

[8:0]

[17:9].

, BWS2 controls D

[17:9]

and BWS3 controls

[26:18]

Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These

Synchronous

address inputs are multiplexed for both read and write operations. Internally, the device is organized as 4M x 8 (4 arrays each of 1M x 8) for CY7C141 1BV18, 4M x 9 (4 arrays each of 1M x 9) for CY7C1426BV18, 2M x 18 (4 arrays each of 512K x 18) for CY7C1413BV18 and 1M x 36 (4 arrays each of 256K x 36) for CY7C1415BV18. Therefore, only 20 address inputs are needed to access the entire memory array of CY7C1411BV18 and CY7C1426BV18, 19 address inputs for CY7C1413BV18 and 18 address inputs for CY7C1415BV18. These inputs are ignored when the appropriate port is deselected.

Outputs-

Synchronous

Data Output Signals. These pins drive out the requested data when the read operation is active. Valid data is driven out on the rising edge of the C and C single clock mode. On deselecting the read port, Q CY7C1411BV18 − Q CY7C1426BV18 − Q CY7C1413BV18 − Q CY7C1415BV18 − Q

[7:0]

[8:0] [17:0] [35:0]

clocks during read operations or K and K, when in

are automatically tri-stated.

[x:0]

Read Port Select − Active LOW . Sampled on the rising edge of positive input clock (K). When active, a

Synchronous

read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tri-stated following the next rising edge of the C clock. Each read access consists of a burst of four sequential transfers.

to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See application example for further details.

Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from

the device. C and C

can be used together to deskew the flight times of various devices on the board back

to the controller. See application example for further details.

and to drive out data through Q edge of K.

when in single clock mode. All accesses are initiated on the rising

[x:0]

Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and

to drive out data through Q

when in single clock mode.

[x:0]

Document Number: 001-07037 Rev. *D Page 6 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Pin Definitions (continued)

Pin Name IO Pin Description

CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC timing table.

ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

DOFF

TDO Output TDO for JTAG. TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/72M N/A Not Connected to the Die. Can be tied to any voltage level.

NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level.

REF

DDQ

Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock

Input DLL Turn Off − Active LOW . Connecting this pin to ground turns off the DLL inside the device. The

Input-

Reference

Power Supply Power Supply Inputs to the Core of the Device.

Ground Ground for the Device.

Power Supply Power Supply Inputs for the Outputs of the Device.

for output data (C for the echo clocks are shown in the AC timing table.

impedance. CQ, CQ, and Q between ZQ and ground. Alternatively, this pin can be connected directly to V minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

timings in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in QDR-I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR-I timing.

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points.

) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings

output impedance are set to 0.2 x RQ, where RQ is a resistor connected

[x:0]

, which enables the

DDQ

Document Number: 001-07037 Rev. *D Page 7 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

Functional Overview

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18 and CY7C1415BV18 are synchronous pipelined burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II completely eliminates the need to turn-around the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1411BV18, four 9-bit data transfers in the case of CY7C1426BV18, four 18-bit data transfers in the case of CY7C1413BV18, and four 36-bit transfers data in the case of CY7C1415BV18 in two clock cycles.

This device operates with a read latency of one and half cycles when DOFF connected to V read latency of one clock cycle.

Accesses for both ports are initiated on the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K enced to the output clocks (C and C clock mode).

All synchronous data inputs (D controlled by the input clocks (K and K outputs (Q rising edge of the output clocks (C and C single clock mode).

All synchronous control (RPS through input registers controlled by the rising edge of the input clocks (K and K).

CY7C1413BV18 is described in the following sections. The same basic descriptions apply to CY7C1411BV18, CY7C1426BV18, and CY7C1415BV18.

Read Operations

The CY7C1413BV18 is organized internally as four arrays of 512K x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS address presented to address inputs are stored in the read address register. Following the next K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q

[17:0]

quent rising edge of C, the next 18-bit data word is driven onto the Q have been driven out onto Q

0.45 ns from the rising edge of the output clock (C or C K

when in single clock mode). T o maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every

pin is tied HIGH. When DOFF pin is set LOW or

then device behaves in QDR-I mode with a

) and all output timing is refer-

or K and K when in single

) pass through input registers

[x:0]

) pass through output registers controlled by the

[x:0]

, WPS, BWS

). All synchronous data

or K and K when in

) inputs pass

[x:0]

active at the rising edge of the positive input clock (K). The

using C as the output timing reference. On the subse-

. This process continues until all four 18-bit data words

[17:0]

. The requested data is valid

[17:0]

, or K or

rising edge of the output clocks (C and C

, or K and K when in

single clock mode). When the read port is deselected, the CY7C1413BV18 first

completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the positive output clock (C). This enables for a transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D the lower 18-bit write data register, provided BWS asserted active. On the subsequent rising edge of the negative input clock (K

), the information presented to D into the write data register, provided BWS active. This process continues for one more cycle until four 18-bit

is latched and stored into

[17:0]

[1:0]

is also stored

[17:0]

are both asserted

[1:0]

are both

words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Initiate write access on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data transfers into the device on every rising edge of the input clocks (K and K

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1413BV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS

, which are sampled with each set of 18-bit data words.

BWS

Asserting the appropriate Byte Write Select input during the data

and

portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation.

Single Clock Mode

The CY7C1411BV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clock (K and K

) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K

and C/C clocks. All timing parameters remains the same in this mode. To use this mode of operation, the user must tie C and C

HIGH at power on. This function is a strap option and not

alterable during device operation.

Concurrent Transactions

The read and write ports on the CY7C1413BV18 operates independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address loca tion. T his

Document Number: 001-07037 Rev. *D Page 8 of 30

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CY7C1411BV18, CY7C1426BV18

CY7C1413BV18, CY7C1415BV18

includes forwarding data from a write cycle that was initiated on

R = 250ohms

Vt = Vddq/2

R = 50ohms

CC#

D A

SRAM #4

R P S #

P S #

S #

CQ/CQ#

CC#

D A

SRAM #1

R P S #

P S #

S #

CQ/CQ#

BUS

MASTER

(CPU

ASIC)

DATA IN

DATA OUT

Address

RPS# WPS# BWS#

Source K

Source K#

Delayed K

Delayed K#

CLKIN/CLKIN#

the previous K clock rise. Read accesses and write access must be scheduled such that

one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports were deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations can not be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (as write operations can not be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alternating read or write operations being initiated, with the first access being a read.

Depth Expansion

The CY7C1413BV18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) completes prior to the device being deselected.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance

to allow the SRAM to adjust its output

of ±15% is between 175Ω and 350Ω output impedance is adjusted every 1024 cycles upon power up

, with V

=1.5V. The

DDQ

to account for drifts in supply voltage and temperature.

Echo Clocks

Echo clocks are provided on the QDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR-II. CQ is referenced with respect to C and CQ with respect to C

. These are free running clocks and are synchro-

is referenced

nized to the output clock of the QDR-II. In the single clock mode, CQ is generated with respect to K and CQ respect to K

. The timings for the echo clocks are shown in the

is generated with

Switching Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K a minimum of 30 ns. However, it is not necessary to reset the DLL to lock to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in QDR-I mode (with one cycle latency and a longer access time). For information refer to the application note “DLL Considerations in QDRII/DDRII”.

for

Application Example

Figure 1 shows four QDR-II used in an application.

Figure 1. Application Example

Document Number: 001-07037 Rev. *D Page 9 of 30

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Cypress CY7C1426BV18, CY7C1415BV18, CY7C1413BV18, CY7C1411BV18 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

Configurations

Functional Description

Selection Guide

Logic Block Diagram (CY7C1411BV18)

Logic Block Diagram (CY7C1426BV18)

Logic Block Diagram (CY7C1413BV18)

Logic Block Diagram (CY7C1415BV18)

Pin Configuration

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

Pin Definitions

Functional Overview

Read Operations

Write Operations

Byte Write Operations

Single Clock Mode

Concurrent Transactions

Depth Expansion

Programmable Impedance

Echo Clocks

Application Example