Cypress CY7C1019CV33 User Manual

CY7C1019CV33

128K x 8 Static RAM

Features

• Pin and function compatible with CY7C1019BV33

•High speed
—t

= 10 ns

AA

• CMOS for optimum speed/power

• Data retention at 2. 0V

• Center power/ground pinout

• Automatic power-down when deselected

• Easy memory expansion with CE

and OE options

• Available in Pb-free and non Pb-free 48-ball VFBGA,
32-pin TSOP II and 400-mil SOJ package

Functional Description

The CY7C1019CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE
active LOW Output Enable (OE

), and tri-state drivers. This

), an

Logic Block Diagram

device has an automatic power-down feature that significantly
reduces power consumption when deselected.

Writing to the device is accomplished by taking Chip Enable
(CE

) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
specified on the address pins (A

through I/O7) is then written into the location

0

through A16).

0

Reading from the device is accomplished by taking Chip
Enable (CE
Enable (WE

) and Output Enable (OE) LOW while forcing Write

) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.

The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE

LOW, and WE LOW).

The CY7C1019CV33 is available in Standard 48-ball FBGA,
32-pin TSOP II and 400-mil-wide SOJ packages

Pin

Configuration

SOJ/TSOP II

Top View

CE
WE

OE

A

1

0

A

1

2

A

3

CE

I/O
I/O

V
V

I/O
I/O

WE

A

CC

SS

A
A
A
A

2

4

3

5
6

0

7

1

8
9
10

2
3

11
12

4

13

5

14

6

15
16

7

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

0

1

2

3

4

5

6

7

INPUTBUFFER

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A
A

ROW DECODER

7
8

128K x 8

DECODER

9

10

A

A

ARRAY

COLUMN

12

A11A13A

SENSE AMPS

POWER

DOWN

14

15

16

A

A

A

32
31

30
29

28
27
26
25
24
23

22
21

20
19

18
17

A
A
A

A
OE

I/O
I/O

V
V
I/O
I/O

A
A

A
A

A

16
15
14

13

7
6

SS
CC

5
4

12
11

10
9

8

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05130 Rev. *F Revised August 3, 2006

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CY7C1019CV33

Pin Configuration

[1]

48-ball VFBGA

(Top View)

NC

I/O

I/O

V

V

I/O

I/O

NC

SS

CC

1

2

OE

NC

0

NC

1

NC

NC

NC

NC

2

NC

3

A

10

A

A

A

NC

A

A

A

4

A

A

A

A

NC

A

A

A

5

6

A

NC

7

6

CE

NC

NC

NC

I/O

WE

A

I/O

I/O

V

CC

V

I/O

4

A

NC

9

5

4

3

11

12

13

SS

A

B

7

C

6

D

E

F

5

G

8

H

3

2

1

0

14

15

16

Selection Guide

-10 -12 -15 Unit

Maximum Access Time 10 12 15 ns
Maximum Operating Current 80 75 70 mA
Maximum Standby Current 5 5 5 mA

Note:

1. NC pins are not connected on the die.

Document #: 38-05130 Rev. *F Page 2 of 10

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CY7C1019CV33

Maximum Ratings

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage on V
DC Voltage Applied to Outputs

in High-Z State

[2]

DC Input Voltage

to Relative GND

CC

....................................–0.5V to VCC + 0.5V

[2]

.................................–0.5V to VCC + 0.5V

[2]

....–0.5V to +4.6V

Electrical Characteristics Over the Operating Range

Parameter Description T e st Con dit ions

V

V

V
V
I
I

I

I

I

OH

OL

IH

IL
IX
OZ

CC

SB1

SB2

Output HIGH Voltage VCC = Min.,

= –4.0 mA

I

OH

Output LOW Voltage VCC = Min.,

I

= 8.0 mA

OL

Input HIGH Volt age 2.0 V
Input LOW Voltage
Input Leakage Current GND < VI < V
Output Leakage

Current
VCC Operating

Supply Current

Automatic CE
Power-down Current
—TTL Inputs

Automatic CE
Power-down Current
—CMOS Inputs

[2]

GND < VI < VCC,
Output Disabled

VCC = Max.,
I

= 0 mA,

OUT

f = f

MAX

Max. VCC, CE > V
VIN > VIH or

< VIL, f = f

V

IN

Max. V

CC

CE

> VCC – 0.3V,

V

> VCC – 0.3V,

IN

< 0.3V, f = 0

or V

IN

= 1/t

,

CC

RC

IH

MAX

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage............................................>2001V

(per MIL-STD-883, Method 3015)

Latch-up Current......................................................>200 mA

Operating Range

Range

Commercial 0°C to +70°C 3.3V ± 10%
Industrial –40°C to +85°C 3.3V ± 10%

–10 –12 –15

2.4 2.4 2.4 V

0.4 0.4 0.4 V

+ 0.3 2.0 V

CC

–0.3 0.8 –0.3 0.8 –0.3 0.8 V

–1 +1 –1 +1 –1 +1 µA
–1 +1 –1 +1 –1 +1 µA

80 75 70 mA

15 15 15 mA

555mA

Ambient

Temperature V

+ 0.3 2.0 VCC + 0.3 V

CC

CC

UnitMin. Max. Min. Max. Min. Max.

Capacitance

[3]

Parameter Description Test Conditions Max. Unit

C

IN

C

OUT

Notes:

(min.) = –2.0V for pulse durations of less than 20 ns.

2. V

IL

3. Tested initially and after any design or process ch anges that may affect these parameters.

Input Capacitance TA = 25°C, f = 1 MHz,

V

= 5.0V

Output Capacitance 8 pF

CC

8pF

Document #: 38-05130 Rev. *F Page 3 of 10

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