CYPRESS CY7C109B, CY7C1009B User Manual
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CY7C109B
CY7C1009B
128K x 8 Static RAM
Features
put Enable (OE
), and three-state drivers. W riting to th e device
is accomplished by taking Chip Enable One (CE
• High speed
—t
= 12 ns
AA
• Low active power
—495 mW (max. 12 ns)
• Low CMOS standby power
—55 mW (max.) 4 mW
• 2.0V Data Retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansio n with CE
, CE2, and OE options
1
Functional Description
Enable (WE
HIGH. Data on the eight I/O pins (I/O
written into the location specified on the address pins (A
through A16).
Reading from the device is accomplished by taking Chip Enable One (CE
Write Enable (WE
these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operat ion (CE
) inputs LOW and Chip Enable Two (CE2) input
through I/O7) is then
0
) and Output Enable (OE) LOW while forcing
1
) and Chip Enable Two (CE2) HIGH. Under
through I/O7) are placed in a
0
LOW, CE2 HIGH, and WE LOW).
1
The CY7C109B is av ailable in stan dard 400-mil-wide SOJ and
The CY7C109B / CY7C1009B is a high-performance CMOS
static RAM organiz ed as 1 31,072 words by 8 bits . Easy mem ory expansion is provided by an active LOW Chip Enable
), an active HIGH Chip Enable (CE2), an active LOW Out-
(CE
1
32-pin TSOP type I packages. The CY7C1009B is available in
a 300-mil-wide SOJ package. The CY7C1009B and
CY7C109B are functionally equivalent in all other respects.
Logic Block Diagram Pin Configurations
SOJ
Top View
CE
CE
WE
OE
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
109B–1
0
1
2
A
1
11
3
4
5
6
7
CE
V
A
WE
A
NC
A
A
A
2
A
9
3
A
8
4
13
5
6
2
7
15
8
CC
9
10
16
11
14
12
12
A
13
7
A
14
6
15
A
5
16
A
4
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
A
1
2
ROW DECODER
7
8
512x256x8
ARRAY
COLUMN
DECODER
11
10
12
9
A
A
A
SENSE AMPS
POWER
DOWN
14
15
16
A
A
A
A13A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
(not to scale)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP I
Top View
32
31
30
CE
29
28
27
26
25
24
23
A
22
CE
I/O
21
I/O
20
I/O
19
I/O
18
I/O
17
V
A
WE
A
A
A
A
OE
CC
15
13
8
9
11
10
2
1
7
6
5
4
3
109B–2
) and Write
1
32
OE
31
A
30
CE
29
I/O
28
I/O
27
I/O
26
I/O
25
I/O
24
GND
23
I/O
22
I/O
I/O
21
A
20
A
19
18
A
A
17
109B–3
0
1
10
7
6
5
4
3
2
1
0
0
1
2
3
Selection Guide
7C109B-12
7C1009B-12
Maximum Access Time (ns) 12 15 20 25 35
Maximum Operating Current (mA) 90 80 75 70 60
Maximum CMOS Standby Current (mA) 10 10 10 10 10
Maximum CMOS Standby Current (mA)
Low Power Version 2 2 2 - -
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05038 Rev. ** Revised August 24, 2001
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
7C109B-25
7C1009B-25
7C109B-35
7C1009B-35
CY7C109B
CY7C1009B
Maximum Ratings
(Above which the useful life may be im pai red. For user guidelines, not tested.)
Static Discharge Voltage...........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
[1]
DC Input Voltage
to Relative GND
CC
....................................–0.5V to VCC + 0.5V
[1]
................................–0.5V to VCC + 0.5V
[1]
....–0.5V to +7.0V
Operating Range
Range
Temperature
Commercial 0°C to +70°C 5V ± 10%
Industrial −40°C to +85°C 5V ± 10%
Ambient
[2]
V
CC
Current into Outputs (LOW).........................................20 mA
Electrical Characteristics Ov er the Op erat ing Range
7C109B-12
7C1009B-12
Parameter Description Min. Max. Min. Max. Unit
V
V
V
V
I
IX
I
OZ
I
OS
I
CC
I
SB1
OH
OL
IH
IL
Output HIGH Voltage VCC = Min.,
Output LOW Voltage VCC = Min.,
Input HIGH V olt age 2.2 V
Input LOW Vo ltag e
[1]
Input Load Current GND < VI < V
Output Leakage
Current
Output Short
Circuit Current
[3]
VCC Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
I
SB2
Automatic CE
Power-Down Current
—CMOS Inputs
Notes:
(min.) = –2.0V for pulse durations of l ess t han 20 ns .
1. V
IL
2. T
is the case temper atu re.
A
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Test Conditions
= –4.0 mA
I
OH
= 8.0 mA
I
OL
CC
GND < VI < VCC,
Output Disabled
VCC = Max.,
= GND
V
OUT
VCC = Max.,
I
= 0 mA,
OUT
f = f
MAX
= 1/t
RC
Max. VCC, CE1 > V
or CE2 < VIL,
> VIH or
V
IN
< VIL, f = f
V
IN
MAX
Max. VCC,
> VCC – 0.3V,
CE
1
or CE2 < 0.3V,
> VCC – 0.3V,
V
IN
< 0.3V, f = 0
or V
IN
2.4 2.4 V
0.4 0.4 V
CC
+ 0.3
–0.3 0.8 –0.3 0.8 V
–1+1–1+1µA
–5+5–5+5µA
–300 –300 mA
90 80 mA
IH
45 40 mA
10 10 mA
L2 2mA
7C109B-15
7C1009B-15
2.2 V
CC
+ 0.3
V
Document #: 38-05038 Rev. ** Page 2 of 12
Electrical Characteristics Ov er the Op erat ing Range (continued)
CY7C109B
CY7C1009B
7C109B-20
7C1009B-20
7C109B-25
7C1009B-25
7C109B-35
7C1009B-35
Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Unit
V
V
V
V
I
IX
I
OZ
I
OS
I
CC
I
SB1
I
SB2
OH
OL
IH
IL
Output HIGH Voltage VCC = Min.,
= –4.0 mA
I
OH
Output LOW Voltage VCC = Min.,
= 8.0 mA
I
OL
Input HIGH Voltage 2.2 V
[3]
[1]
GND < VI < VCC,
Output Disabled
VCC = Max.,
V
OUT
VCC = Max.,
I
OUT
f = f
Max. V
or CE2 < VIL,
> VIH or
V
IN
< VIL, f = f
V
IN
Max. VCC,
CE
1
or CE
> VCC – 0.3V,
V
IN
or V
CC
= GND
= 1/t
, CE1 > V
CC
RC
MAX
= 0 mA,
MAX
> VCC – 0.3V,
< 0.3V,
2
< 0.3V, f = 0
IN
IH
L2——mA
Input LOW Voltage
Input Load Current GND < VI < V
Output Leakage
Current
Output Short
Circuit Current
VCC Operating
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
2.4 2.4 2.4 V
0.4 0.4 0.4 V
CC
+ 0.3
2.2 V
+ 0.3
CC
2.2 V
CC
+ 0.3
–0.3 0.8 –0.3 0.8 –0.3 0.8 V
–1+1–1+1–1+1µA
–5+5–5+5–5+5µA
–300 –300 –300 mA
75 70 60 mA
30 30 25 mA
10 10 10 mA
V
Capacitance
[4]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Input Capacitance TA = 25°C, f = 1 MHz,
= 5.0V
V
Output Capacitance 8 pF
CC
9pF
AC Test Loads and Waveforms
ALL INPUT PULSES
90%
10%
(b)
R1 480Ω
10B9–4
R2
255
Ω
Ω
(a)
THÉ
R1 480
167Ω
R2
255
OUTPUT
Ω
5V
INCLUDING
JIG AND
SCOPE
1.73V
5 pF
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to: VENIN EQUIVALENT
OUTPUT
Note:
4. Tested initially and after any design or process changes that may affect these parameters.
3.0V
GND
≤ 3 ns ≤ 3 ns
90%
10%
109B–5
Document #: 38-05038 Rev. ** Page 3 of 12
CY7C109B
CY7C1009B
Switching Characteristics
[5]
Over the Oper ating R ange
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
Parameter Description Min. Max. Min. Max. Unit
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
WRITE CYCLE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL/IOH
6. t
HZOE
7. At any given temperature and voltage condition, t
8. The internal write time of the memory is defined by the overlap of CE
the transition of any of th ese signals can termi nate the write. The input data s et-up and hold timing shou ld be referenced to the lead ing edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 3 (WE
Read Cycle Time 12 15 ns
Address to Data Valid 12 15 ns
Data Hold from Address Change 3 3 ns
CE1 LOW to Data Valid, CE2 HIGH to Data
12 15 ns
Valid
OE LOW to Data Valid 6 7 ns
OE LOW to Low Z 0 0 ns
OE HIGH to High Z
CE1 LOW to Low Z, CE2 HIGH to Low Z
CE1 HIGH to High Z, CE2 LOW to High Z
CE1 LOW to Power-Up, CE2 HIGH to
[6, 7]
[7]
[6, 7]
67ns
33ns
67ns
00ns
Power-Up
CE1 HIGH to Power-Down, CE2 LOW to
12 15 ns
Power-Down
[8]
Write Cycle Time
[9]
12 15 ns
CE1 LOW to Write End, CE2 HIGH to Write End 10 12 ns
Address Set-Up to Write End 10 12 ns
Address Hold from Write End 0 0 ns
Address Set-Up to Write Start 0 0 ns
WE Pulse Width 10 12 ns
Data Set-Up to Write End 7 8 ns
Data Hold from Write End 0 0 ns
WE HIGH to Low Z
WE LOW to High Z
and 30-pF load capacitance.
, t
HZCE
, and t
are specified with a lo ad cap acita nce of 5 pF as in pa rt (b) of AC Test Loads. Transiti on is mea sured ±500 mV fro m stea dy-st ate vo ltage.
HZWE
[7]
[6, 7]
is less than t
HZCE
controlled, OE LOW) is the sum of t
, t
LZCE
HZOE
LOW, CE2 HIGH, and WE LO W. C E1 and WE must be LOW a nd CE2 HIGH to initiate a write, and
1
33ns
67ns
is less than t
LZOE
, and t
HZWE
is less than t
HZWE
and tSD.
for any given device.
LZWE
Document #: 38-05038 Rev. ** Page 4 of 12
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