CYPRESS CY7C09279, CY7C09289, CY7C09379, CY7C09389 User Manual

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CY7C09279/89 CY7C09379/89
32K/64K x16/18
Synchronous Dual Port Static RAM
Features
• True dual-ported memory cells which allow simulta­neous access of the same memory location
• Six Flow-Through/Pipelined devices
—32K x 16/18 organization (CY7C09279/379) —64K x 16/18 organization (CY7C09289/389)
• Three Modes
—Flow-Through —Pipelined —Burst
• Pipelined output mode on both ports allows fast 100­MHz cycle tim e
• 0.35-micron CMOS for optimum speed/power
• High-speed clock to data access 6.5 (max.)
[1]
/7.5/9/12 ns
• Low operating power —Active = 195 mA (typical)
—Standby = 0.05 mA (typical)
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally —Shorten cycle times —Minimize bus noise —Supported in Flow-Through and Pipelined modes
• Dual Chip Enables for easy depth expansion
• Upper and Lower Byte Controls for Bus Matching
• Automatic power-down
• Commercial and Industrial temperature ranges
• Available in 100-pin TQFP
• Pin-compatible and functi onally equivalent to IDT70927
and IDT709279
Logic Block Diagram
R/W
L
UB
L
CE
0L
CE
1L
LB
L
OE
L
FT/Pipe I/O
I/O0L–I/O A0L–A
CLK ADS CNTEN CNTRST
L
[2]
–I/O
8/9L
15/17L
[3]
7/8L
[4] [4]
14/15L
L
L
L
L
8/9
8/9
15/16
1 0
0/1
1b
0b 1a 0a
0/1
ba
Counter/
Address
Register
Decode
I/O
Control
True Dual-Ported
RAM Array
I/O
Control
0/1
1b
0b1a0a
ba
Counter/
Address
Register
Decode
R/W
R
UB
R
CE
1 0
0/1
8/9
I/O
–I/O
8/9R
8/9
I/O0R–I/O
15/16
A0R–A
CNTRST
CE
LB
OE
FT/Pipe
[2]
15/17R
[3]
7/8R
14/15R
CLK
ADS
CNTEN
0R 1R
R R
R
R R R R
Notes:
1. See page 6 for Load Conditions. –I/O15 for x16 devices; I/O9–I/O17 for x18 devices.
2. I/O
8
3. I/O
–I/O7 for x16 devices. I/O0–I/O8 for x18 devices.
0
4. A
for 32K; A0–A15 for 64K devices.
0–A14
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600 Document #: 38-06040 Rev. ** Revised September 19, 2001
CY7C09279/89
CY7C09379/89
Functional Description
The CY7C09279/89 and CY7C09379/89 are high-speed syn­chronous CMOS 32K, an d 64K x 16 /18 dual-p ort static RAMs. Two po rts are prov ided, permitting i ndependent, s imultaneou s access for reads and writes to any loca tion in mem ory.
[5]
Reg­isters on control, address, a nd data li nes allow fo r minimal set­up and hold times. In pipelin ed output mode, data is registered for decreased cycle time. Clock to data valid t (pipelined). Flow-through mode can also be used to bypass
CD2
= 6.5 ns
[1]
the pipelined output register to eliminate access latency. In flow-through mode da ta will be avail able t address is clocked into the device. Pipelined output or flow­through mode is selected via the FT
/PIPE pin.
= 15 ns after the
CD1
Each port contains a bu rst co un ter on the i nput a ddress re gis­ter. The internal write pulse width is independent of the LOW­to-HIGH transition of the cl ock si gn al. The internal write puls e is self-timed to allow the shortest possible cycle times.
Pin Configurations
100-Pin TQFP (Top View)
A8L
A7L
A6L
A5L
A4L
CNTRSTL
[7]
FT/PIPEL
A10L A11L A12L A13L A14L
A15L
UBL CE0L CE1L
VCC
R/WL
OEL
GND I/O15L I/O14L I/O13L I/O12L I/O11L I/O10L
A9L
NC NC
LBL
A3L
A1L
A2L
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
24 25
CY7C09289 (64K x 16) CY7C09279 (32K x 16)
3332313029282726
CLKL
CNTENL
A0L
92 91 90 848587 868889 83 82 81 7678 77798093949596979899100
34 35 36 424139 403837 43 44 45 5048 494746
A HIGH on CE down the internal circ uitry to reduce the static power consump-
or LOW on CE1 for one clock cycl e will po wer
0
tion. The use of multiple Chip Enables allows easier banking of multiple chips for depth expansion configurations. In the pipelined mode, one c ycl e is req uired wi th CE HIGH to reactivate the outputs.
LOW and CE
0
Counter enable input s are provided to s tall the operation of the address input and uti lize the internal address generated b y the internal counter for fast interleaved memory applications. A ports burst counter is loaded with the ports Address Strobe
). When the ports Count Enable (CNTEN) is asserted,
(ADS the address counter will increment on each LOW-to-HIGH transition of that ports clock signal. This will read/write one word from/into each successive address location until CNTEN is deasserted. The counter can address the entire memory array and will loop back to the start. Counter Reset (CNTRST is used to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack (TQFP) packages.
GND
ADSR
ADSL
CLKR
CNTENR
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A9R A10R A11R A12R A13R A14R
[6][6]
A15R NC NC LBR UBR CE0R CE1R CNTRSTR GND R/WR OER FT/PIPER GND I/O15R I/O14R I/O13R I/O12R I/O11R I/O10R
1
)
[7]
VCC
I/O7L
I/O8L
Notes:
5. When writing simultaneously to the same location, the final value cannot be guaranteed.
6. This pin is NC for CY7C09279.
7. For CY7C09279, pin #18 connected to V through device.
I/O9L
is equivalent to an IDT x16 pipelined device; connecting pin #18 and #58 to GND is equivalent to an IDT x16 flow-
CC
I/O4L
I/O5L
I/O6L
GND
I/O2L
I/O3L
GND
I/O0L
I/O1L
I/O0R
I/01R
I/O4R
I/O2R
I/O3R
VCC
I/O7R
I/O6R
I/O5R
NC
I/O9R
I/O8R
Document #: 38-06040 Rev. ** Page 2 of 18
Pin Configurations (continued)
A8L
A7L
A6L
A9L A10L A11L A12L A13L A14L
A15L
LBL
UBL CE0L CE1L
CNTRSTL
R/WL
OEL
VCC
FT/PIPEL
I/O17L I/O16L
GND I/O15L I/O14L I/O13L 1/012L
I/O11L I/O10L
[8]
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
100-Pin TQFP (Top View)
A5L
A4L
A3L
A1L
A2L
CLKL
CNTENL
A0L
92 91 90 848587 868889 83 82 81 7678 77798093949596979899100
GND
ADSL
CY7C09389 (64K x 18) CY7C09379 (32K x 18)
34 35 36 424139 403837 43 44 45 5048 494746
3332313029282726
GND
CY7C09279/89
CY7C09379/89
CNTENR
CLKR
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A8R A9R A10R A11R A12R A13R A14R
[8]
A15R LBR UBR CE0R CE1R CNTRSTR R/WR GND OER FT/PIPER I/O17R GND I/O16R I/O15R I/O14R I/O13R I/O12R I/O11R
ADSR
I/O9L
I/O8L
VCC
I/O7L
I/O6L
I/O5L
I/O4L
I/O3L
I/O2L
GND
I/O1L
I/O0L
GND
I/O0R
I/01R
I/O2R
I/O3R
I/O4R
I/O5R
I/O6R
VCC
I/O7R
I/O8R
I/O9R
I/10R
Selection Guide
CY7C09279/89 CY7C09379/89
(MHz) (Pipelined) 100 83 67 50
f
MAX2
Max Access Time (ns)
[1]
-6
6.5 7.5 9 12
(Clock to Data, Pipelined) Typical Operating Current I Typical Standby Current for I
(Both Ports TTL Level) Typical Standby Current for I
(Both Ports CMOS Level)
Note:
8. This pin is NC for CY7C09379.
(mA) 250 235 215 195
CC
SB1
SB3
(mA)
(mA)
45 40 35 30
0.05 0.05 0.05 0.05
Document #: 38-06040 Rev. ** Page 3 of 18
CY7C09279/89 CY7C09379/89
-7
CY7C09279/89 CY7C09379/89
-9
CY7C09279/89 CY7C09379/89
-12
Pin Definitions
Left Port Right Port Description
A0L–A
15L
ADS
L
CE0L,CE
CLK
L
CNTEN
L
CNTRST
I/O0L–I/O LB
L
UB
L
OE
L
R/W
L
FT/PIPE
GND Ground Input. NC No Connect. V
CC
L
1L
L
17L
A0R–A
15R
ADS
R
CE0R,CE
CLK
R
CNTEN
CNTRST
I/O0R–I/O LB
R
UB
R
OE
R
R/W
R
FT/PIPE
Address Inputs (A0–A
for 32K, A0–A
14
for 64K devices).
15
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to access the part usin g an exter nally supplied address. Ass erting this s ignal LOW a lso loads t he burst counter with the address present on the address pins.
Chip Enable Input. To select either the left or right port, both CE0 AND CE1 must be asserted
1R
to their active states (CE0 VIL and CE1 VIH). Clock Signal. This input can be free running or strobed. Maximum clock input rate is f
R
Counter Enable Input. Asserting this signal LOW increments the burst address counter of its respective port on each risi ng edge of CLK. CNTEN LOW.
Counter Reset Input. As serting this s ignal LO W res ets th e burst a ddress counter of its respe c-
R
tive port to zero. CNTRST is not disabled by asserting ADS or CNTEN. Data Bus Input/Output (I/O0–I/O15 for x16 devices).
17R
Lower Byte Select Input. Asserting this signal LOW enables read and write operations to the lower byte. (I/O
and OE signals must be asserted t o drive output data on the lowe r byte o f the da ta pins.
the LB
–I/O8 for x18, I/O0–I/O7 for x16) of the memory array . For read operations both
0
Upper Byte Select Input. Same function as LB, but to the upper byte (I/O Output Enable Input. This signa l must be asserted LOW to enable the I/O da ta pins during read
operations. Read/Write Enable Inp ut. Thi s s ign al is asserte d LO W to write t o the du al po rt me mo ry arra y.
For read operations, assert this pin HIGH. Flow-Through/Pipelined Select Input. For flow-through mode operation, assert this pin LOW.
R
For pipelined mode operation, assert this pin HIGH.
Power Input.
CY7C09279/89
CY7C09379/89
.
MAX
is disabled if ADS or CNTRST are asserted
8/9L
–I/O
15/17L
).
Maximum Ratings
(Above which the useful life may be im pai red. For user guide­lines, not tested.)
Storage Temperature................................. –65
Ambient Temperature with Power Applied..–55°C to +125°C
Supply Voltage to Ground Potential...............–0.3V to +7.0V
DC Voltage Applied to
Outputs in High Z State.................................–0.5V to +7.0V
DC Input Voltage............................................–0.5V to +7.0V
Note:
9. Industrial parts are available in CY7C09289 and Cy7C09389 only
°C to +150°C
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage ...........................................>1100V
Latch-Up Current.....................................................>200 mA
Operating Range
Range
Commercial 0°C to +70°C 5V ± 10% Industrial
[9]
Ambient
Temperature V
CC
–40°C to +85°C 5V ± 10%
Document #: 38-06040 Rev. ** Page 4 of 18
Electrical Characteristics Ov er the Op erat ing Range
[1]
-6
Parameter Description
V
V
V V I
OZ
I
CC
I
SB1
OH
OL
IH IL
Output HIGH Voltage
= Min., IOH= –4.0 mA)
(V
CC
Output LOW V o lta ge (VCC= Min., IOH= +4.0 mA)
Input HIGH Vo ltage 2.2 2.2 2.2 2.2 V Input LOW Voltage 0.8 0.8 0.8 0.8 V Output Leakage Current –10 10 –10 10 –10 10 –10 10 µA Operating Current
=Max.,
(V
CC
=0mA)
I
OUT
Outputs Disabled Standby Current (Both
Ports TTL Level)
[10]
CEL & CER VIH, f=f
MAX
I
SB2
Standby Current (One Port TTL Level)
[10]
CEL | CER VIH, f=f
MAX
I
SB3
I
SB4
Standby Current (Both Ports CMOS Level) CEL & CER V
0.2V, f = 0 Standby Current (One
Port CMOS Level)
CC
[10]
[10]
CEL | CER VIH, f=f
MAX
Coml. 250 450 235 420 215 360 195 300 mA Ind.
Coml. 45 115 40 105 35 95 30 85 mA Ind.
Coml. 175 235 160 220 145 205 125 190 mA Ind.
Coml. 0.05 0.5 0.05 0.5 0.05 0.5 0.05 0.5 mA Ind.
Coml. 160 200 145 185 130 170 110 150 mA Ind.
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
2.4 2.4 2.4 2.4 V
[9]
[9]
[9]
[9]
[9]
CY7C09279/89
CY7C09379/89
CY7C09279/89 CY7C09379/89
-7 -9 -12 Unit
0.4 0.4 0.4 0.4 V
245 410 mA
50 110 mA
160 220 mA
0.05 0.5 mA
145 185 mA
Capacitance
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Note:
and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 VIL and CE1 VIH).
10. CE
L
Document #: 38-06040 Rev. ** Page 5 of 18
Input Capacitance TA = 25°C, f = 1 MHz, Output Capacitance 10 pF
VCC = 5.0V
10 pF
AC Test Loads
OUTPUT
C= 30pF
(a) Normal Load (Load 1)
5V
R1 = 893
R2 = 347
CY7C09279/89
CY7C09379/89
5V
R
= 250
OUTPUT
C=
30 pF
(b) Thévenin Equivalent (Load1)
TH
V
TH
=1.4V
OUTPUT
C= 5pF
(c)Three-State Delay(Load 2)
(Used for t
CKLZ
, t
OLZ
including scope and jig)
R1 = 893
R2 = 347
, & t
OHZ
AC Test Loads (Applicable to -6 only)
Z0 = 50
R = 50
OUTPUT
C
(a) Load 1 (-6 only)
VTH=1.4V
0.60
0.50
0.40
0.30
0.20
[11]
3.0V
GND
3ns
ALL INPUTPULSES
10%
90%
90%
10%
ns
3
0.1 0
(ns) for all -12 access ti mes
0.00 1 0 1 5 20 25 30 35
Capacitance (pF)
(b) Load Derating Curve
Note:
11. Test Conditions: C = 10 pF.
Document #: 38-06040 Rev. ** Page 6 of 18
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