• T rue Dual-P orted memory cell s which allow simultaneous access of the same memory location
• 6 Flow-Through/Pipelined devices
—32K x 8/9 organizations (CY7C09079V/179V)
—64K x 8/9 organizations (CY7C09089V/189V)
—128K x 8/9 organizations (CY7C09099V/199V)
• 3 Modes
—Flow-Through
—Pipelined
—Burst
• Pipelined output mode on both ports allows fast
100-MHz operation
• 0.35-micron CMOS for optimum speed/power
v
Logic Block Diagram
R/W
L
OE
L
CY7C09179V/89V/99V
3.3V 32K/64K/128K x 8/9
Synchronous Dual-Port Static RAM
• High-speed clock to data access 6.5
[1, 2]
(max.)
• 3.3V low operating power
—Active= 115 mA (typical)
— Standby= 10 µA (typ ical)
• Fully synchronous interfa ce for easier operatio n
• Burst coun ters increment addresses internally
—Shorten cycle times
—Minimize bus noise
—Supported in Flow-Through and Pip eli ned m odes
• Dual Chip Enables f or easy depth expansion
• Automatic power-down
• Commercial and Industrial temper ature ranges
Available in 100-pin TQFP
•
/7.5
[2]
/9/12 ns
R/W
OE
R
R
CE
0L
CE
1L
FT/Pipe
I/O0L–I/O
A
CLK
ADS
CNTEN
CNTRST
Notes:
1. Call for availability.
2. See page 6 for Load Conditions.
3. I/O
4. A
L
[3]
7/8L
[4]
0–A14/15/16L
L
L
L
–I/O7 for x8 devices; I/O0–I/O8 for x9 devices.
0
for 32K; A0–A15 for 64K; and A0–A16 for 128K devices.
0–A14
15/16/17
L
Counter/
Address
Register
Decode
1
0
0/1
1
0/1
1
0
0/1
1
0/1
8/98/9
0
I/O
Control
I/O
Control
0
Counter/
Address
Register
True Dual-Ported
RAM Array
Decode
15/16/17
CE
CE
FT/Pipe
I/O0R–I/O
[4]
A
0–A14/15/16R
CLK
ADS
CNTEN
CNTRST
0R
1R
R
[3]
7/8R
R
R
R
R
For the most recent information, visit the Cypress web sit e at www.cypress.com
Cypress Semiconductor Corporation
•3901 North First Street•San Jose•CA 95134•408-943-2600
September 23, 1999
CY7C09079V/89V/99V
PRELIMINARY
Functional Description
The CY7C09079V/89V/99V and CY7C09179V/89V/99V are
high-speed synchronous CMOS 32K, 64K, and 128K x 8/9
dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any
location in memory.
lines allow for m ini m al set-up and hold times. In pipelin ed output mode, data is registered for decreased cycle time. Clock
to data valid t
can also be used to bypass the pipelined output register to
eliminate access latency. In flow-through mode data will be
available t
CD1
device. Pipelined output or flow-through mode is selected via
the FT
/Pipe pin.
Each port contains a b urst co unter on t he input address register. The internal write pulse width is independent of the
LOW-to-HIGH transi tion of the clock signal. The internal write
pulse is self-t imed to allow the shortest possib le cycle times.
Pin Configurations
[5]
Registers on control, address , and data
CD2
= 6.5 ns
[1, 2]
(pipelined). Flow-thro ugh m ode
= 18 ns after the address is clocked into the
100-Pin TQFP
NCNCA6L
A5L
A4L
A3L
A1L
CNTENL
A0L
A2L
(Top View)
CY7C09179V/89V/99V
A HIGH on CE
down the in ternal ci rcuitry to r educe the static power consumption. The use of multiple Chip Enables allows easier banking
of multiple chips for depth expansion configurations. In the
pipelined mode, one cycle is requir ed with CE
HIGH to reactiv ate the outputs.
Counter enable inputs are pro vided to sta ll the oper ation of the
address input an d utilize the internal address gener ated b y the
internal counter for fast interleaved memory applications. A
port’s burst counter is loaded with the port’s Address Strobe
(ADS
). When the port’s Count Enable (CNTEN) is asserted,
the address counter will increment on each LOW-to-HIGH
transition of that port’s clock signal. This will read/write one
word from/in to each su cces siv e address locat io n until CNTEN
is deasserted. The counter can address the entire memory
array and will loop bac k to the start. Counter Reset (CNT RST
is used to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack
(TQFP) packages.
Address Inputs (A0–A14 for 32K; A0–A15 for 64K; and A0–A16 for 128K devices).
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to
access the part using an e xternally supplied address. Asserting this signal LOW al so loads the
burst counter wit h the address present on the addr ess pins.
Chip Enable Input. To select either the l eft or right port, both CE0 AND CE1 must be asserted to
1R
their active states (CE
≤ VIL and CE1 ≥ VIH).
0
Clock Signal. This input can be free running or strobed. Ma ximum clock input rate is f
Counter Enable In put. Asserting this signal LO W increments the bur st address counter of its
R
respectiv e port on eac h rising ed ge of CLK. CNTEN
LOW.
Counter Reset I nput. Ass erting this si gnal LO W reset s the bu rst addre ss counter of its respecti ve
R
por t to zer o. CNTRS T
Data Bus Input/Output (I/O0–I/O7 for x8 de vices; I/O0–I/O8 for x9 de vices).
8R
is not disabled by asserting ADS or CNTEN.
Output Enable Input. This signal must be asserted LO W to enab le the I/O data pin s during read
operations.
Read/Write Enable I nput. This signal i s asserted LOW t o write to the dua l port memory array. For
read operation s, assert this pin HIGH.
Flow-Through/ Pipelined Sele ct Input. For flow -through mod e operatio n, assert this pin LOW. For
R
pipelined mode operation, assert this pin HIGH.
Power Input.
CY7C09179V/89V/99V
.
MAX
is disab led i f ADS or CNTRST are asse rted
Maximum Ratings
(Abov e which the useful life may be impaired. For user guidelines, not tested.)
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to V
DC Input Voltage......................................–0.5V to V
°
C to +150°C
°
C to +125°C
+0.5V
CC
+0.5V
CC
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......... ............ .....................>2001V
Latch -U p Cu rre n t....... ......... ... ......... ... .......... .. .......... . >200mA
Operating Range
Ambient
Range
Commercial0°C to +70°C 3.3V ± 300 mV
Industrial–40
Temperature
°
C to +85°C 3.3V ± 300 mV
V
CC
4
CY7C09079V/89V/99V
Electrical Characteristics
ParameterDescription
V
V
V
V
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
OH
OL
IH
IL
Output HIGH Voltage (VCC=Min.,
I
= –4.0 mA)
OH
Output LOW Voltage (VCC=Min.,
I
= +4.0 mA)
OH
Input HIGH Voltage2.02.02.02.0V
Input LOW Voltage0.80.80.80.8V
Output Leakage Current–1010–1010–1010–1010µA
Operating Current
(V
=Max., I
CC
Outputs Disabled
Standby Current (Both
Ports TTL Level)
& CE
≥ VIH, f=f
R
Standby Current (One
Port TTL Level)
CE
≥ VIH, f=f
R
OUT
[11]
MAX
=0 mA)
[11]
MAX
Standby Current (Both
Ports CMOS Level)
CEL & CER ≥ VCC – 0.2V,
f=0
Standby Current (One
Port CMOS Level)
[11]
CEL | CER ≥ VIH, f=f
PRELIMINARY
CY7C09179V/89V/99V
Over the Operating Range
CY7C09079V/89V/99V
CY7C09179V/89V/99V
[1, 2]
-6
Min.
Typ.
Max.
[2]
-7
Min.
Typ.
Max.
-9-12
Min.
Typ.
Max.
Min.
2.42.42.42.4 V
0.40.40.40.4V
Com’l.175 320155 275135 225115 205 mA
Indust.185 295mA
Com’l.2595258520652050mA
CEL
Indust.3575mA
Com’l.115 175105 1659515085140 mA
CEL |
Indust.105 160mA
Com’l.10250102501025010250µA
[11]
Indust.10250µA
Com’l.105 135951258511575100 mA
Indust.95125mA
MAX
Typ.
Max.
Units
Capacitance
ParameterDescriptionTe st Condi tionsMax.Unit
C
IN
C
OUT
Note:
11. CE
and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 ≤ VIL and CE1 ≥ VIH).
L
Input CapacitanceTA = 25°C, f = 1 MHz,
V
= 3.3V
Output Capacitance10pF
CC
10pF
5
CY7C09079V/89V/99V
PRELIMINARY
AC Test Loads
3.3V
R1= 590
OUTPUT
pF
C= 30
R2= 435
(a) Normal Load(Load 1)
AC Test Loads (Applicable to -6 and -7 only)
Z0 = 50
Ω
OUTPUT
C
R = 50
Ω
Ω
Ω
VTH=1.4V
OUTPUT
C=
30 pF
(b) Thévenin Equivalent (Load 1)
[12]
R
TH
=250
Ω
3.0V
GND
V
TH
≤
=1.4V
10%
3ns
CY7C09179V/89V/99V
3.3V
R1= 590
OUTPUT
C= 5pF
(c)Three-State Delay(Load 2)
(Used for t
CKLZ
including scope and jig)
ALL INPUTPULSES
90%
90%
, t
OLZ
10%
R2= 435
, & t
3
ns
≤
Ω
Ω
OHZ
(a) Load 1 (-6 and -7 only)
(ns) for al l -7 access times
∆
0.60
0.50
0.40
0.30
0.20
0.1 0
0.00
1 01 520253035
Capacitance (pF)
(b) Load Derating Curve
Note:
12. Test Conditions: C = 10 pF.
6
CY7C09079V/89V/99V
PRELIMINARY
Switching Characteristics
ParameterDescription
f
MAX1
f
MAX2
t
CYC1
t
CYC2
t
CH1
t
CL1
t
CH2
t
CL2
t
R
t
F
t
SA
t
HA
t
SC
t
HC
t
SW
t
HW
t
SD
t
HD
t
SAD
t
HAD
t
SCN
t
HCN
t
SRST
t
HRST
t
OE
[13,14]
t
OLZ
[13,14]
t
OHZ
t
CD1
t
CD2
t
DC
[13,14]
t
CKHZ
[13,14]
t
CKLZ
Port to Port Delays
t
CWDD
t
CCS
Notes:
13. Test conditions used are Load 2.
14. This parameter is guaranteed by design, but it is not production tested.
f
Flow-Through53454033MHz
Max
f
Pipelined100836750MHz
Max
Clock Cycle Ti m e - Flo w -Through19222530ns
Clock Cycle Ti me - Pipelined10121520ns
Clock HIGH Time - Flow -Through6 .57.51212ns
Clock LOW Time - Flow-Through6.57.51212ns
Clock HIGH Time - Pipeli ned4568ns
Clock LOW Time - Pi pelined4568ns
Clock Rise Time3333ns
Clock Fall Time3333ns
Addr ess Set-Up Time3. 5444ns
Address Hold Time0011ns
Chip Enable Set-Up Time3.5444ns
Chip Enable Hold Time0011ns
R/W Set-Up Time3.5444ns
R/W Hold Time0011ns
Input Data Set-Up Time3.5444ns
Input Data Hold Time0011ns
ADS Set-Up Time3.5444ns
ADS Hold Time0011ns
CNTEN Set-Up Time3.54.555ns
CNTEN Hold Time0011ns
CNTRST Set-Up Time3.5444ns
CNTRST Hold Time0011ns
Output Enable to Data Valid891012ns
OE to Low Z2222ns
OE to High Z17171717ns
Clock to Data Valid - Flow-Through15182025ns
Clock to Data Valid - Pipelined6.57.5912ns
Data Output Hold After Clock HIGH2222ns
Clock HIGH to Output High Z29292929ns
Clock HIGH to Output Low Z2222ns
Write Port Cloc k HIGH to Read Data Dela y30354040ns
Clock to Clock Set-Up Time9101515ns
Over the Operating Range
-6
[1, 2]
Min.
CY7C09079V/89V/99V
CY7C09179V/89V/99V
[2]
-7
Min.
Max.
Max.
CY7C09179V/89V/99V
-9-12
Min.
Max.
Min.
Max.
Units
7
CY7C09079V/89V/99V
PRELIMINARY
Switching Waveforms
Read Cycle for Flow-Through Output (FT
CLK
CE
0
t
SC
CE
1
R/W
ADDRESS
DATA
OUT
Read Cycle for Pipelined Operation (FT/PIPE = VIH)
CLK
OE
t
t
SW
SA
(continued )
t
CH1
t
HC
t
HW
t
HA
A
n
t
CKLZ
t
CH2
t
CD1
t
CYC2
t
CYC1
/PIPE = VIL)
t
CL1
A
n+1
t
CL2
[15, 16, 17, 18]
t
DC
Q
n
[15, 16, 17, 18]
CY7C09179V/89V/99V
t
SC
A
n+2
Q
n+1
t
OHZ
t
OLZ
t
OE
t
HC
A
n+3
t
CKHZ
Q
n+2
t
DC
CE
0
CE
t
SC
1
t
HC
R/W
ADDRESS
DATA
OUT
t
SW
t
SA
t
HW
t
HA
A
n
1 Latency
t
CKLZ
A
n+1
t
CD2
OE
Notes:
15. OE
is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
= VIL, CNTEN and CNTRST = VIH.
16. ADS
17. The output is disabled (high-impedance state) by CE
18. Addresses do not have to be accessed sequentially since ADS
or CE1 = VIL following the next rising edge of the clock.
0=VIH
= VIL constantly loads the address on the rising edge of the CLK. Numbers are for reference only.
t
SC
A
n+2
t
DC
Q
n
Q
n+1
t
OHZ
t
HC
A
n+3
Q
n+2
t
OLZ
t
OE
8
CY7C09079V/89V/99V
PRELIMINARY
Switching Waveforms
Bank Select Pipelined Read
-
CLK
L
t
SA
ADDRESS
DATA
ADDRESS
DATA
Left Port Write to Flow-Through Right Port Read
(B1)
CE
0(B1)
OUT(B1)
(B2)
CE
0(B2)
OUT(B2)
t
SC
t
SA
t
SC
(continued )
[19, 20]
t
CH2
A
0
A
0
t
CYC2
t
HA
t
HC
t
HA
t
HC
t
CL2
A
1
t
CD2
A
1
A
2
t
SC
D
0
t
A
2
t
SC
[21, 22, 23, 24]
t
DC
HC
CY7C09179V/89V/99V
A
3
t
CD2
t
HC
t
CKHZ
D
1
t
DC
A
3
t
CD2
t
CKLZ
A
4
t
CD2
t
CKLZ
A
4
t
CKHZ
D
2
A
5
t
CKHZ
D
3
A
5
t
CD2
D
4
t
CKLZ
CLK
L
R/W
L
ADDRESS
ADDRESS
DATA
Notes:
19. In this depth expansion example, B1 represents Bank #1 and B2 is Bank #2; Each Bank consists of one Cypress dual-port device from this datasheet.
ADDRESS
20. OE
21. The same waveforms apply for a right port write to flow-through left port read.
22. CE
23. OE
24. It t
until t
L
DATA
INL
CLK
R
R/W
R
R
OUTR
(B1)
and ADS = VIL; CE
and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
0
= VIL for the right port, which is being read from. OE = VIH for the left port, which is being written to.
≤ maximum specified, then data from right port READ is not valid until the maximum specified for t
CCS
+ t
CCS
CD1
t
SW
t
SA
t
SD
= ADDRESS
. t
CWDD
(B2)
, CE
1(B1)
does not apply in this case.
MATCH
VALID
.
1(B2)
t
HW
t
HA
t
HD
t
CCS
t
CD1
t
SWtHW
t
SAtHA
MATCH
t
CWDD
t
DC
, R/W, CNTEN, and CNTRST = VIH.
NO
MATCH
NO
MATCH
t
CD1
VALIDVALID
t
DC
. If t
CWDD
>maximum specified, then data is not valid
CCS
9
CY7C09079V/89V/99V
PRELIMINARY
t
A
n
(continued )
t
CYC2
CH2
t
HC
t
HW
t
HA
t
CL2
A
n+1
t
CD2
Switching Waveforms
Pipelined Read-to-Write-to-Read (OE = VIL)
CLK
CE
0
t
SC
CE
1
R/W
t
SW
ADDRESS
t
SA
DATA
IN
DATA
OUT
[18, 25, 26 , 27]
t
SW
Q
n
CY7C09179V/89V/99V
t
HW
A
n+2
t
CKHZ
A
n+2
tSDt
D
n+2
HD
A
n+3
t
CKLZ
A
n+4
t
CD2
Q
n+3
Pipelined Read-to-Write-to-Read (OE Controlled)
t
CYC2
t
t
t
HC
HW
HA
t
CL2
A
n+1
t
CD2
Q
t
OHZ
CLK
CE
CE
R/W
ADDRESS
DATA
DATA
OUT
t
CH2
0
t
SC
1
t
SW
A
n
t
SA
IN
[18, 25, 26, 27 ]
t
t
HW
SW
A
n+2
tSDt
D
n+2
n
NO OPERATIONWRITEREADREAD
HD
A
n+3
D
n+3
A
n+4
t
CKLZ
A
n+5
t
CD2
Q
n+4
OE
READREADWRITE
Notes:
25. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
26. CE
and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.
0
27. During “No Operation”, data in memory at the selected address may be corrupted and should be re-written to ensure data integrity.
10
CY7C09079V/89V/99V
PRELIMINARY
t
CH1
A
n
t
CD1
t
CH1
(continued )
t
CYC1
t
CL1
t
HC
t
HW
t
HA
Q
n
t
t
CYC1
t
CL1
DC
A
n+1
t
READ
[16, 18, 25, 26, 27]
CD1
t
CKHZ
Switching Waveforms
Flow-Through Read-to-Write- to- R ead (OE = VIL)
CLK
CE
0
t
SC
CE
1
R/W
t
SW
ADDRESS
t
SA
DATA
IN
DATA
OUT
Flow-Through Read-to-Write- to- R ead (OE Controlled)
A
n+2
Q
n+1
NO
OPERATION
[16, 19, 25, 26, 27]
t
t
SW
SD
CY7C09179V/89V/99V
t
HW
A
n+2
t
D
n+2
WRITEREAD
HD
A
n+3
t
CD1
t
CKLZ
A
n+4
t
CD1
Q
n+3
t
DC
CLK
CE
CE
R/W
ADDRESS
DATA
DATA
OUT
OE
0
t
SC
1
t
SW
A
t
SA
IN
t
HC
t
SW
t
HW
n
t
HA
t
CD1
A
n+1
t
t
DC
Q
n
SD
t
OHZ
A
n+2
D
n+2
READ
t
HW
A
n+3
t
HD
D
n+3
A
n+4
t
WRITEREAD
OE
t
t
CKLZ
CD1
A
n+5
t
CD1
Q
n+4
t
DC
11
CY7C09079V/89V/99V
PRELIMINARY
t
CYC2
t
CH2
t
n
t
HAD
t
HCN
READ
EXTERNAL
ADDRESS
(continued )
t
CL2
HA
Q
t
CD2
x
t
DC
READ WITH COUNTER
Switching Waveforms
Pipelined Read with Address Counter Advance
CLK
t
SA
ADDRESS
ADS
CNTEN
DATA
OUT
t
SAD
t
SCN
A
Q
x-1
[28]
CY7C09179V/89V/99V
t
SAD
t
SCN
Q
n
Q
t
HAD
t
HCN
n+1
COUNTER HOLD
Q
n+2
READ WITH COUNTER
Q
n+3
Flow-Through Read with Address Counter Advance
t
CYC1
ADDRESS
CNTEN
DATA
Note:
28. CE
t
CH1
CLK
t
SA
A
n
t
SAD
ADS
t
SCN
OUT
Q
x
t
DC
EXTERNAL
ADDRESS
and OE = VIL; CE1, R/W and CNTRST = VIH.
0
t
t
HAD
t
HCN
t
CD1
READ
HA
t
CL1
Q
n
READ WITH COUNTER
[28]
t
SAD
t
SCN
Q
n+1
Q
n+2
COUN TER HOLD
t
HAD
t
HCN
READ
WITH
Q
n+3
COUNTER
12
CY7C09079V/89V/99V
PRELIMINARY
t
CH2
A
n
D
n
ADDRESS
(continued )
t
CYC2
t
CL2
t
HA
A
n
t
HAD
t
HCN
t
HD
D
n+1
WRIT E WITH
COUNTER
A
n+1
D
n+1
WRITE COUNTER
HOLD
D
n+2
Switching Waveforms
Write with Address Counter Advance (Flow-Through or Pipelined Outputs)
CLK
t
SA
ADDRESS
INTERNAL
ADDRESS
t
SAD
ADS
CNTEN
t
SCN
DATA
IN
t
SD
WRITE EXTERNAL
[29, 30]
CY7C09179V/89V/99V
A
n+2
D
n+3
WRITE WITH COUNTER
A
n+3
D
n+4
A
n+4
Notes:
29. CE
and R/W = VIL; CE1 and CNTRST = VIH.
0
30. The “Internal Addres s” is equal to the “External Address” when ADS
= VIL and equals the counter output when ADS = VIH.
13
CY7C09079V/89V/99V
Switching Waveforms
(continued )
Counter Reset (Pi p e lined Outputs)
t
CYC2
CLK
ADDRESS
INTERNAL
ADDRESS
R/W
ADS
CNTEN
CNTRST
t
SAD
t
SCN
t
SRST
t
CH2
A
X
t
HAD
t
HCN
t
HRST
t
CL2
t
PRELIMINARY
[18, 25, 31, 32 ]
01A
SWtHW
tSDt
HD
CY7C09179V/89V/99V
t
SAtHA
A
n
A
n+1
n
A
n+1
DATA
IN
DATA
OUT
COUNTER
RESET
Notes:
= VIL; CE1 = VIH.
31. CE
0
32. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset.
D
0
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
Q
0
READ
ADDRESS n
Q
1
Q
n
14
CY7C09079V/89V/99V
PRELIMINARY
Read/W rite and Enable Operation
[33, 34, 35]
CY7C09179V/89V/99V
InputsOutputs
OECLKCE
0
CE
1
R/WI/O
I/O
–
0
9
XHXXHigh-ZDeselected
XXLXHigh-ZDeselected
XLHLD
LLHHD
IN
OUT
Write
Read
HXLHXHigh-ZOutputs Disabl ed
Address Counter Control Operation
[33, 37, 38, 39]
Previous
Address
XXXXLD
A
XA
Address
n
XLXHD
CLKADSCNTEN CNTRSTI/OModeOperation
out(0)
out(n)
n
HHHD
out(n)
ResetCounter Reset to Address 0
LoadAddress Load into Counte r
HoldExternal Address Bloc ked—Counter
Disabled
XA
n
HLHD
out(n+1)
IncrementCounter Enabled—Internal Address
Generation
Operation
[36]
[36]
[36]
Notes:
33. “X” = “don’t care”, “H” = V
, CNTEN, CNTRST = “don’t care”.
34. ADS
35. OE is an asynchronous input signal.
36. When CE changes state in the pipelined mode, deselection and read happen in the following clock cycle.
37. CE0 and OE = VIL; CE1 and R/W = VIH.
38. Data shown for flow-through mode; pipelined mode output will be delayed by one cycle.
39. Counter operation is independent of CE
, “L” = VIL.
IH
and CE1.
0
15
CY7C09079V/89V/99V
PRELIMINARY
CY7C09179V/89V/99V
Ordering Information
32K x8 3.3V Synchronous Dual -Port SRAM
Speed (ns)Ordering CodePackage NamePack ag e TypeOperatingRange