CYPRESS CY7C09079V, CY7C09089V, CY7C09099V, CY7C09179V, CY7C09189V, CY7C09199V User Manual
Specifications and Main Features
Frequently Asked Questions
User Manual
1
查询CY7C91079V供应商
CY7C09079V/89V/99V
PRELIMINARY
Features
• T rue Dual-P orted memory cell s which allow simultaneous access of the same memory location
• 6 Flow-Through/Pipelined devices
—32K x 8/9 organizations (CY7C09079V/179V)
—64K x 8/9 organizations (CY7C09089V/189V)
—128K x 8/9 organizations (CY7C09099V/199V)
• 3 Modes
—Flow-Through
—Pipelined
—Burst
• Pipelined output mode on both ports allows fast
100-MHz operation
• 0.35-micron CMOS for optimum speed/power
v
Logic Block Diagram
R/W
L
OE
L
CY7C09179V/89V/99V
3.3V 32K/64K/128K x 8/9
Synchronous Dual-Port Static RAM
• High-speed clock to data access 6.5
[1, 2]
(max.)
• 3.3V low operating power
—Active= 115 mA (typical)
— Standby= 10 µA (typ ical)
• Fully synchronous interfa ce for easier operatio n
• Burst coun ters increment addresses internally
—Shorten cycle times
—Minimize bus noise
—Supported in Flow-Through and Pip eli ned m odes
• Dual Chip Enables f or easy depth expansion
• Automatic power-down
• Commercial and Industrial temper ature ranges
Available in 100-pin TQFP
•
/7.5
[2]
/9/12 ns
R/W
OE
R
R
CE
0L
CE
1L
FT/Pipe
I/O0L–I/O
A
CLK
ADS
CNTEN
CNTRST
Notes:
1. Call for availability.
2. See page 6 for Load Conditions.
3. I/O
4. A
L
[3]
7/8L
[4]
0–A14/15/16L
L
L
L
–I/O7 for x8 devices; I/O0–I/O8 for x9 devices.
0
for 32K; A0–A15 for 64K; and A0–A16 for 128K devices.
0–A14
15/16/17
L
Counter/
Address
Register
Decode
1
0
0/1
1
0/1
1
0
0/1
1
0/1
8/98/9
0
I/O
Control
I/O
Control
0
Counter/
Address
Register
True Dual-Ported
RAM Array
Decode
15/16/17
CE
CE
FT/Pipe
I/O0R–I/O
[4]
A
0–A14/15/16R
CLK
ADS
CNTEN
CNTRST
0R
1R
R
[3]
7/8R
R
R
R
R
For the most recent information, visit the Cypress web sit e at www.cypress.com
Cypress Semiconductor Corporation
•3901 North First Street•San Jose•CA 95134•408-943-2600
September 23, 1999
CY7C09079V/89V/99V
PRELIMINARY
Functional Description
The CY7C09079V/89V/99V and CY7C09179V/89V/99V are
high-speed synchronous CMOS 32K, 64K, and 128K x 8/9
dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any
location in memory.
lines allow for m ini m al set-up and hold times. In pipelin ed output mode, data is registered for decreased cycle time. Clock
to data valid t
can also be used to bypass the pipelined output register to
eliminate access latency. In flow-through mode data will be
available t
CD1
device. Pipelined output or flow-through mode is selected via
the FT
/Pipe pin.
Each port contains a b urst co unter on t he input address register. The internal write pulse width is independent of the
LOW-to-HIGH transi tion of the clock signal. The internal write
pulse is self-t imed to allow the shortest possib le cycle times.
Pin Configurations
[5]
Registers on control, address , and data
CD2
= 6.5 ns
[1, 2]
(pipelined). Flow-thro ugh m ode
= 18 ns after the address is clocked into the
100-Pin TQFP
NCNCA6L
A5L
A4L
A3L
A1L
CNTENL
A0L
A2L
(Top View)
CY7C09179V/89V/99V
A HIGH on CE
down the in ternal ci rcuitry to r educe the static power consumption. The use of multiple Chip Enables allows easier banking
of multiple chips for depth expansion configurations. In the
pipelined mode, one cycle is requir ed with CE
HIGH to reactiv ate the outputs.
Counter enable inputs are pro vided to sta ll the oper ation of the
address input an d utilize the internal address gener ated b y the
internal counter for fast interleaved memory applications. A
port’s burst counter is loaded with the port’s Address Strobe
(ADS
). When the port’s Count Enable (CNTEN) is asserted,
the address counter will increment on each LOW-to-HIGH
transition of that port’s clock signal. This will read/write one
word from/in to each su cces siv e address locat io n until CNTEN
is deasserted. The counter can address the entire memory
array and will loop bac k to the start. Counter Reset (CNT RST
is used to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack
(TQFP) packages.
Address Inputs (A0–A14 for 32K; A0–A15 for 64K; and A0–A16 for 128K devices).
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to
access the part using an e xternally supplied address. Asserting this signal LOW al so loads the
burst counter wit h the address present on the addr ess pins.
Chip Enable Input. To select either the l eft or right port, both CE0 AND CE1 must be asserted to
1R
their active states (CE
≤ VIL and CE1 ≥ VIH).
0
Clock Signal. This input can be free running or strobed. Ma ximum clock input rate is f
Counter Enable In put. Asserting this signal LO W increments the bur st address counter of its
R
respectiv e port on eac h rising ed ge of CLK. CNTEN
LOW.
Counter Reset I nput. Ass erting this si gnal LO W reset s the bu rst addre ss counter of its respecti ve
R
por t to zer o. CNTRS T
Data Bus Input/Output (I/O0–I/O7 for x8 de vices; I/O0–I/O8 for x9 de vices).
8R
is not disabled by asserting ADS or CNTEN.
Output Enable Input. This signal must be asserted LO W to enab le the I/O data pin s during read
operations.
Read/Write Enable I nput. This signal i s asserted LOW t o write to the dua l port memory array. For
read operation s, assert this pin HIGH.
Flow-Through/ Pipelined Sele ct Input. For flow -through mod e operatio n, assert this pin LOW. For
R
pipelined mode operation, assert this pin HIGH.
Power Input.
CY7C09179V/89V/99V
.
MAX
is disab led i f ADS or CNTRST are asse rted
Maximum Ratings
(Abov e which the useful life may be impaired. For user guidelines, not tested.)
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to V
DC Input Voltage......................................–0.5V to V
°
C to +150°C
°
C to +125°C
+0.5V
CC
+0.5V
CC
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......... ............ .....................>2001V
Latch -U p Cu rre n t....... ......... ... ......... ... .......... .. .......... . >200mA
Operating Range
Ambient
Range
Commercial0°C to +70°C 3.3V ± 300 mV
Industrial–40
Temperature
°
C to +85°C 3.3V ± 300 mV
V
CC
4
CY7C09079V/89V/99V
Electrical Characteristics
ParameterDescription
V
V
V
V
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
OH
OL
IH
IL
Output HIGH Voltage (VCC=Min.,
I
= –4.0 mA)
OH
Output LOW Voltage (VCC=Min.,
I
= +4.0 mA)
OH
Input HIGH Voltage2.02.02.02.0V
Input LOW Voltage0.80.80.80.8V
Output Leakage Current–1010–1010–1010–1010µA
Operating Current
(V
=Max., I
CC
Outputs Disabled
Standby Current (Both
Ports TTL Level)
& CE
≥ VIH, f=f
R
Standby Current (One
Port TTL Level)
CE
≥ VIH, f=f
R
OUT
[11]
MAX
=0 mA)
[11]
MAX
Standby Current (Both
Ports CMOS Level)
CEL & CER ≥ VCC – 0.2V,
f=0
Standby Current (One
Port CMOS Level)
[11]
CEL | CER ≥ VIH, f=f
PRELIMINARY
CY7C09179V/89V/99V
Over the Operating Range
CY7C09079V/89V/99V
CY7C09179V/89V/99V
[1, 2]
-6
Min.
Typ.
Max.
[2]
-7
Min.
Typ.
Max.
-9-12
Min.
Typ.
Max.
Min.
2.42.42.42.4 V
0.40.40.40.4V
Com’l.175 320155 275135 225115 205 mA
Indust.185 295mA
Com’l.2595258520652050mA
CEL
Indust.3575mA
Com’l.115 175105 1659515085140 mA
CEL |
Indust.105 160mA
Com’l.10250102501025010250µA
[11]
Indust.10250µA
Com’l.105 135951258511575100 mA
Indust.95125mA
MAX
Typ.
Max.
Units
Capacitance
ParameterDescriptionTe st Condi tionsMax.Unit
C
IN
C
OUT
Note:
11. CE
and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 ≤ VIL and CE1 ≥ VIH).
L
Input CapacitanceTA = 25°C, f = 1 MHz,
V
= 3.3V
Output Capacitance10pF
CC
10pF
5
CY7C09079V/89V/99V
PRELIMINARY
AC Test Loads
3.3V
R1= 590
OUTPUT
pF
C= 30
R2= 435
(a) Normal Load(Load 1)
AC Test Loads (Applicable to -6 and -7 only)
Z0 = 50
Ω
OUTPUT
C
R = 50
Ω
Ω
Ω
VTH=1.4V
OUTPUT
C=
30 pF
(b) Thévenin Equivalent (Load 1)
[12]
R
TH
=250
Ω
3.0V
GND
V
TH
≤
=1.4V
10%
3ns
CY7C09179V/89V/99V
3.3V
R1= 590
OUTPUT
C= 5pF
(c)Three-State Delay(Load 2)
(Used for t
CKLZ
including scope and jig)
ALL INPUTPULSES
90%
90%
, t
OLZ
10%
R2= 435
, & t
3
ns
≤
Ω
Ω
OHZ
(a) Load 1 (-6 and -7 only)
(ns) for al l -7 access times
∆
0.60
0.50
0.40
0.30
0.20
0.1 0
0.00
1 01 520253035
Capacitance (pF)
(b) Load Derating Curve
Note:
12. Test Conditions: C = 10 pF.
6
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