CYPRESS CY7C09079V, CY7C09089V, CY7C09099V, CY7C09179V, CY7C09189V User Manual

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查询CY7C91079V供应商
CY7C09079V/89V/99V
PRELIMINARY
• T rue Dual-P orted memory cell s which allow simulta­neous access of the same memory location
• 6 Flow-Through/Pipelined devices
—32K x 8/9 organizations (CY7C09079V/179V) —64K x 8/9 organizations (CY7C09089V/189V) —128K x 8/9 organizations (CY7C09099V/199V)
• 3 Modes
—Flow-Through —Pipelined —Burst
• Pipelined output mode on both ports allows fast 100-MHz operation
• 0.35-micron CMOS for optimum speed/power
v
Logic Block Diagram
R/W
L
OE
L
CY7C09179V/89V/99V
3.3V 32K/64K/128K x 8/9
Synchronous Dual-Port Static RAM
• High-speed clock to data access 6.5
[1, 2]
(max.)
• 3.3V low operating power —Active= 115 mA (typical) — Standby= 10 µA (typ ical)
• Fully synchronous interfa ce for easier operatio n
• Burst coun ters increment addresses internally —Shorten cycle times
—Minimize bus noise —Supported in Flow-Through and Pip eli ned m odes
• Dual Chip Enables f or easy depth expansion
• Automatic power-down
• Commercial and Industrial temper ature ranges
Available in 100-pin TQFP
/7.5
[2]
/9/12 ns
R/W
OE
R
R
CE
0L
CE
1L
FT/Pipe I/O0L–I/O
A CLK ADS CNTEN CNTRST
Notes:
1. Call for availability.
2. See page 6 for Load Conditions.
3. I/O
4. A
L
[3]
7/8L
[4]
0–A14/15/16L
L
L
L
–I/O7 for x8 devices; I/O0–I/O8 for x9 devices.
0
for 32K; A0–A15 for 64K; and A0–A16 for 128K devices.
0–A14
15/16/17
L
Counter/
Address
Register
Decode
1 0
0/1
1
0/1
1 0
0/1
1
0/1
8/9 8/9
0
I/O
Control
I/O
Control
0
Counter/
Address Register
True Dual-Ported
RAM Array
Decode
15/16/17
CE CE
FT/Pipe
I/O0R–I/O
[4]
A
0–A14/15/16R
CLK
ADS
CNTEN
CNTRST
0R 1R
R
[3]
7/8R
R R R R
For the most recent information, visit the Cypress web sit e at www.cypress.com
Cypress Semiconductor Corporation
3901 North First Street San Jose CA 95134 408-943-2600 September 23, 1999
CY7C09079V/89V/99V
PRELIMINARY
Functional Description
The CY7C09079V/89V/99V and CY7C09179V/89V/99V are high-speed synchronous CMOS 32K, 64K, and 128K x 8/9 dual-port static RAMs. Two ports are provided, permitting in­dependent, simultaneous access for reads and writes to any location in memory. lines allow for m ini m al set-up and hold times. In pipelin ed out­put mode, data is registered for decreased cycle time. Clock to data valid t can also be used to bypass the pipelined output register to eliminate access latency. In flow-through mode data will be available t
CD1
device. Pipelined output or flow-through mode is selected via the FT
/Pipe pin.
Each port contains a b urst co unter on t he input address regis­ter. The internal write pulse width is independent of the LOW-to-HIGH transi tion of the clock signal. The internal write pulse is self-t imed to allow the shortest possib le cycle times.
Pin Configurations
[5]
Registers on control, address , and data
CD2
= 6.5 ns
[1, 2]
(pipelined). Flow-thro ugh m ode
= 18 ns after the address is clocked into the
100-Pin TQFP
NCNCA6L
A5L
A4L
A3L
A1L
CNTENL
A0L
A2L
(Top View)
CY7C09179V/89V/99V
A HIGH on CE down the in ternal ci rcuitry to r educe the static power consump­tion. The use of multiple Chip Enables allows easier banking of multiple chips for depth expansion configurations. In the pipelined mode, one cycle is requir ed with CE HIGH to reactiv ate the outputs.
Counter enable inputs are pro vided to sta ll the oper ation of the address input an d utilize the internal address gener ated b y the internal counter for fast interleaved memory applications. A ports burst counter is loaded with the port’s Address Strobe (ADS
). When the ports Count Enable (CNTEN) is asserted, the address counter will increment on each LOW-to-HIGH transition of that port’s clock signal. This will read/write one word from/in to each su cces siv e address locat io n until CNTEN is deasserted. The counter can address the entire memory array and will loop bac k to the start. Counter Reset (CNT RST is used to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack (TQFP) packages.
CLKL
GND
ADSR
CLKR
ADSL
CNTENR
or LOW on CE1 for one clock cy cle will power
0
0
A0R
A1R
A2R
A3R
A4R
A5R
A6RNCNC
LOW and CE
1
)
CNTRSTL
[8]
FT
A10L A11L A12L A13L A14L
[6]
A15L
[7]
A16L
CE CE1L
R/WL
/PIPEL
NC
NC A7L A8L A9L
VCC
NC
NC
NC
NC
OE
NC
NC
92 91 90 848587 868889 83 82 81 7678 77798093949596979899100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0L
L
17 18 19 20 21 22 23
24 25
CY7C09099V (128K x 8)
CY7C09089V (64K x 8) CY7C09079V (32K x 8)
34 35 36 424139 403837 43 44 45 5048 494746
3332313029282726
75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
NC NC A7R A8R A9R A10R A11R A12R A13R A14R
[6]
A15R
[7]
A16R GND NC NC NC NC
0R
CE CE1R CNTRST R/WR OER FT/PIPER GND NC
R
[8]
NC
GND
I/O7L
I/O4L
I/O5L
I/O6L
GND
I/O2L
I/O3L
VCC
GND
I/O0L
I/O1L
I/O0R
Notes:
5. When writing simultaneously to the same location, the final value cannot be guaranteed.
6. This pin is NC for CY7C09079V.
7. This pin is NC for CY7C09079V and CY7C09089V.
8. For CY7C09079V and CY7C09089V , pin #23 connected to V compatible with an IDT 5V x16 flow-through device.
is pin compatible with an IDT 5V x8 pipelined device; connecting pin #23 and #53 to GND is pin
CC
2
I/01R
NC
NC
VCC
I/O2R
I/O5R
I/O3R
I/O4R
NC
I/O7R
I/O6R
CY7C09079V/89V/99V
Pin Configurations
NC
NC A7L A8L A9L
A10L A11L A12L A13L A14L
[9]
A15L
A16L
VCC
NC
NC
NC
NC
CE0L CE1L
CNTRSTL
R/WL
OEL
FT/PIPEL
NC
NC
(continued)
NCNCA6L
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
PRELIMINARY
100-Pin TQFP
(Top View)
A5L
A4L
A3L
A1L
A2L
CLKL
CNTENL
A0L
92 91 90 848587 868889 83 82 81 7678 77798093949596979899100
GND
GND
ADSL
CY7C09199V (128K x 9)
CY7C09189V (64K x 9) CY7C09179V (32K x 9)
34 35 36 424139 403837 43 44 45 5048 494746
3332313029282726
CY7C09179V/89V/99V
CNTENR
ADSR
A0R
CLKR
A1R
A2R
A3R
A4R
A5R
A6R
NC
75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
NC NC A7R A8R A9R A10R A11R A12R A13R A14R
[9]
A15R
[10][10]
A16R GND NC NC NC NC CE0R CE1R CNTRSTR R/WR OER FT/PIPER GND NC
NC
VCC
GND
I/O7L
I/O8L
I/O4L
I/O5L
I/O6L
GND
I/O2L
I/O3L
I/O1L
GND
I/O0L
I/O0R
I/01R
VCC
I/O3R
I/O2R
I/O6R
I/O5R
I/O4R
NC
I/O8R
I/O7R
Selectio n Guide
CY7C09079V/89V/99V CY7C09179V/89V/99V
f
(MHz) (Pipel ined) 100 83 67 50
MAX2
Max. Access Time (ns)
[1, 2]
-6
6.5 7.5 9 12 (Clock to Data, Pipelined)
Typical Operating Current I
CC
(mA)
T ypical Standby Curren t for I Port s TTL Level)
(mA) (Both
SB1
T ypical Standby Curren t for I
(µA) (Both P orts
SB3
175 155 135 115
25 25 20 20
10 µA10 µA 10 µA10 µA
CMOS Level)
Notes:
9. This pin is NC for CY7C09179V.
10. This pin is NC for CY7C09179V and CY7C09189V.
CY7C09079V/89V/99V CY7C09179V/89V/99V
[2]
-7
3
CY7C09079V/89V/99V CY7C09179V/89V/99V
-9
CY7C09079V/89V/99V CY7C09179V/89V/99V
-12
CY7C09079V/89V/99V
PRELIMINARY
Pin Definitions
Left Port Right Port Description
A0L–A
16L
ADS
L
CE0L,CE
CLK
L
CNTEN
CNTRST
I/O0L–I/O OE
L
R/W
L
FT/PIPE
GND Ground Input. NC No Connect. V
CC
L
1L
L
8L
L
A0R–A
16R
ADS
R
CE0R,CE
CLK
R
CNTEN
CNTRST
I/O0R–I/O OE
R
R/W
R
FT/PIPE
Address Inputs (A0–A14 for 32K; A0–A15 for 64K; and A0–A16 for 128K devices). Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW to
access the part using an e xternally supplied address. Asserting this signal LOW al so loads the burst counter wit h the address present on the addr ess pins.
Chip Enable Input. To select either the l eft or right port, both CE0 AND CE1 must be asserted to
1R
their active states (CE
VIL and CE1 VIH).
0
Clock Signal. This input can be free running or strobed. Ma ximum clock input rate is f Counter Enable In put. Asserting this signal LO W increments the bur st address counter of its
R
respectiv e port on eac h rising ed ge of CLK. CNTEN LOW.
Counter Reset I nput. Ass erting this si gnal LO W reset s the bu rst addre ss counter of its respecti ve
R
por t to zer o. CNTRS T Data Bus Input/Output (I/O0–I/O7 for x8 de vices; I/O0–I/O8 for x9 de vices).
8R
is not disabled by asserting ADS or CNTEN.
Output Enable Input. This signal must be asserted LO W to enab le the I/O data pin s during read operations.
Read/Write Enable I nput. This signal i s asserted LOW t o write to the dua l port memory array. For read operation s, assert this pin HIGH.
Flow-Through/ Pipelined Sele ct Input. For flow -through mod e operatio n, assert this pin LOW. For
R
pipelined mode operation, assert this pin HIGH.
Power Input.
CY7C09179V/89V/99V
.
MAX
is disab led i f ADS or CNTRST are asse rted
Maximum Ratings
(Abov e which the useful life may be impaired. For user guide­lines, not tested.)
Storage Temperature................ .. ............ ... –65
Ambient Temperature with Power Applied..–55
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to V
DC Input Voltage......................................–0.5V to V
°
C to +150°C
°
C to +125°C
+0.5V
CC
+0.5V
CC
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......... ............ .....................>2001V
Latch -U p Cu rre n t....... ......... ... ......... ... .......... .. .......... . >200mA
Operating Range
Ambient
Range
Commercial 0°C to +70°C 3.3V ± 300 mV Industrial –40
Temperature
°
C to +85°C 3.3V ± 300 mV
V
CC
4
CY7C09079V/89V/99V
Electrical Characteristics
Parameter Description
V
V
V V I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
OH
OL
IH IL
Output HIGH Voltage (VCC=Min., I
= –4.0 mA)
OH
Output LOW Voltage (VCC=Min., I
= +4.0 mA)
OH
Input HIGH Voltage 2.0 2.0 2.0 2.0 V Input LOW Voltage 0.8 0.8 0.8 0.8 V Output Leakage Current –10 10 –10 10 –10 10 –10 10 µA Operating Current
(V
=Max., I
CC
Outputs Disabled Standby Current (Both
Ports TTL Level) & CE
VIH, f=f
R
Standby Current (One Port TTL Level) CE
VIH, f=f
R
OUT
[11]
MAX
=0 mA)
[11]
MAX
Standby Current (Both Ports CMOS Level) CEL & CER VCC – 0.2V, f=0
Standby Current (One Port CMOS Level)
[11]
CEL | CER VIH, f=f
PRELIMINARY
CY7C09179V/89V/99V
Over the Operating Range
CY7C09079V/89V/99V CY7C09179V/89V/99V
[1, 2]
-6
Min.
Typ.
Max.
[2]
-7
Min.
Typ.
Max.
-9 -12
Min.
Typ.
Max.
Min.
2.42.42.42.4 V
0.4 0.4 0.4 0.4 V
Coml. 175 320 155 275 135 225 115 205 mA
Indust. 185 295 mA
Coml. 25 95 25 85 20 65 20 50 mA
CEL
Indust. 35 75 mA
Coml. 115 175 105 165 95 150 85 140 mA
CEL |
Indust. 105 160 mA
Coml. 10 250 10 250 10 250 10 250 µA
[11]
Indust. 10 250 µA
Coml. 105 135 95 125 85 115 75 100 mA
Indust. 95 125 mA
MAX
Typ.
Max.
Units
Capacitance
Parameter Description Te st Condi tions Max. Unit
C
IN
C
OUT
Note:
11. CE
and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 ≤ VIL and CE1 ≥ VIH).
L
Input Capacitance TA = 25°C, f = 1 MHz,
V
= 3.3V
Output Capacitance 10 pF
CC
10 pF
5
CY7C09079V/89V/99V
PRELIMINARY
AC Test Loads
3.3V
R1= 590
OUTPUT
pF
C= 30
R2= 435
(a) Normal Load(Load 1)
AC Test Loads (Applicable to -6 and -7 only)
Z0 = 50
OUTPUT
C
R = 50
VTH=1.4V
OUTPUT
C=
30 pF
(b) Thévenin Equivalent (Load 1)
[12]
R
TH
=250
3.0V
GND
V
TH
=1.4V
10%
3ns
CY7C09179V/89V/99V
3.3V
R1= 590
OUTPUT
C= 5pF
(c)Three-State Delay(Load 2)
(Used for t
CKLZ
including scope and jig)
ALL INPUTPULSES
90%
90%
, t
OLZ
10%
R2= 435
, & t
3
ns
OHZ
(a) Load 1 (-6 and -7 only)
(ns) for al l -7 access times
0.60
0.50
0.40
0.30
0.20
0.1 0
0.00 1 0 1 5 20 25 30 35
Capacitance (pF)
(b) Load Derating Curve
Note:
12. Test Conditions: C = 10 pF.
6
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