• True Dual-Ported memory cells which allow simultaneous reads of the same memory location
• 4K x 16 organization (CY7C024)
• 4K x 18 organization (CY7C0241)
• 8K x 16 organization (CY7C025)
• 8K x 18 organization (CY7C0251)
• 0.65-micron CMOS for optimum speed/power
• High-speed access: 15 ns
• Low operating power: I
• Fully asynchronous operation
• Automatic power-down
• Expandable data bus to 32/36 bits or more using
Master/Slave chip select when using more than one
device
• On-chip arbitration logic
• Semaphores included to permit software handshaking
between ports
•INT
flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Pin select for Master or Slave
• Available in 84-pin Lead (Pb)-free PLCC, 84-pin PLCC,
100-pin Lead (Pb)-free TQFP, and 100-pin TQFP
= 150 mA (typ.)
CC
Functional Description
The CY7C024/0241 and CY7C025/0251 are low-power
CMOS 4K x 16/18 and 8K x 16/18 dual-port static RAMs.
Various arbitration schemes are included on the CY7C024/
0241 and CY7C025/0251 to handle situations when multiple
processors access the same piece of data. Two ports are
provided, permitting independent, asynchronous access for
reads and writes to any location in memory. The CY7C024/
0241 and CY7C025/0251 can be utilized as standalone
16-/18-bit dual-port static RAMs or multiple devices can be
combined in order to function as a 32-/36-bit or wider master/
slave dual-port static RAM. An M/S
menting 32-/36-bit or wider memory applications without the
need for separate master and slave devices or additional
discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and
dual-port video/graphics memory.
Each port has independent control pins: Chip Enable (CE
Read or Write Enable (R/W
flags are provided on each port (BUSY
signals that the port is trying to access the same location
currently being accessed by the other port. The Interrupt Flag
(INT) permits communication between ports or systems by
means of a mail box. The semaphores are used to pass a flag,
or token, from one port to the other to indicate that a shared
resource is in use. The semaphore logic is comprised of eight
shared latches. Only one side can control the latch
(semaphore) at any time. Control of a semaphore indicates
that a shared resource is in use. An automatic power-down
feature is controlled independently on each port by a chip
select (CE
The CY7C024/0241 and CY7C025/0251 are available in
84-pin Lead (Pb)-free PLCCs, 84-pin PLCCs (CY7C024 and
CY7C025 only), 100-pin Lead (Pb)-free Thin Quad Plastic
Flatplack (TQFP) and 100-pin Thin Quad Plastic Flatpack.
) pin.
pin is provided for imple-
), and Output Enable (OE). Two
and INT). BUSY
),
Cypress Semiconductor Corporation•3901 North First Street•San Jose, CA 95134•408-943-2600
Document #: 38-06035 Rev. *C Revised November 11, 2004
Logic Block Diagram
CY7C024/0241
CY7C025/0251
L
L
L
OE
L
R/W
UB
LB
OE
R
R
R
CE
R
R
(CY7C025/0251) A
Pin Configurations
Notes:
is an output in master mode and an input in slave mode.
1. BUSY
–I/O8 on the CY7C0241/0251.
2. I/O
0
–I/O17 on the CY7C0241/0251.
3. I/O
9
on the CY7C025/0251.
4. A
12L
on the CY7C025/0251.
5. A
12R
[3]
I/O8L–I/O
15L
[2]
I/O0L–I/O
7L
[1][1]
BUSY
L
12L
A
11L
A
0L
R/W
L
SEM
INT
L
L
7L6L5L4L3L
I/O
I/O
I/O
ADDRESS
DECODER
I/O
CONTROL
MEMORY
ARRAY
CE
L
OE
L
UB
L
LB
L
2L
I/O
I/O
I/O
GND
INTERRUPT
SEMAPHORE
ARBITRATION
M/S
84-Pin PLCC
Top View
L
0L
1L
CC
V
OE
I/O
I/O
R/W
L
1234567891011
I/O
12
8L
I/O
13
9L
14
I/O
10L
15
I/O
11L
16
I/O
12L
17
I/O
13L
18
GND
19
I/O
14L
20
I/O
V
GND
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
I/O
I/O
15L
CC
21
CC
22
23
0R
24
1R
25
2R
26
27
3R
28
4R
29
5R
6R
30
31
7R
32
8R
9R
10R
I/O
I/O
14R
11R
12R
13R
I/O
I/O
I/O
I/O
GND
15R
I/O
CY7C024/5
42414039383736353433
R
R
OE
R/W
GND
R
CE
SEM
I/O
CONTROL
ADDRESS
DECODER
CE
R
OE
R
UB
R
LB
R
L
L
L
[4]
L
CE
SEM
UB
10L
11L
AAA
9L
75767778798081828384
74
73
72
71
70
69
68
67
NC
LB
66
65
64
63
62
61
60
59
58
57
56
55
54
46454443
47
R
R
R
[5]
LB
UB
A
NC
535251504948
7R
9R
8R
10R
11R
A
A
A
A
[3]
–
I/O8RI/O
15R
[2]
–
I/O
I/O
0R
7R
BUSY
R
(CY7C025/0251)
A
12R
A
11R
A
0R
R/W
R
SEM
R
INT
R
8L
A
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
GND
M/S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
Document #: 38-06035 Rev. *CPage 2 of 21
Pin Configurations (continued)
I/O9LI/O8LI/O7LI/O6LI/O5LI/O4LI/O3LI/O
2L
GND
I/O1LI/O
100-Pin TQFP
Top View
L
L
L
0L
CC
SEM
OE
V
R/W
CE
CY7C024/0241
CY7C025/0251
[4]
L
L
UBLLB
NC
11LA10L
A
A9LA8LA7LA
6L
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
NC
NC
NC
NC
10L
11L
12L
13L
GND
14L
15L
V
GND
V
NC
NC
NC
NC
100 99 979896
1
2
3
4
5
6
7
8
9
10
11
CC
0R
1R
2R
CC
3R
4R
5R
6R
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28302931 32353436 37 3833
I/O7RI/O8RI/O
10L
I/O9LI/O7LI/O6LI/O5LI/O4LI/O3LI/O
I/O
95 94
9R
10R
11R
12R
13R
I/O
I/O
I/O
I/O
2L
9091
14R
15R
GND
I/O
I/O
100-Pin TQFP
GND
I/O1LI/O
89 8886878593 9284
CY7C024/5
4039
R
R
RCERUBRLBR
Œ
GND
R/W
SEM
Top View
L
L
L
0L
CC
OE
SEM
V
R/W
83 82 81 80 79 78 7 7 76
4241
43 44 45 46 47 48 49 50
[5]
11RA10R
A9RA8RA7RA6RA
A
NC
[4]
L
L
11LA10L
NC
CE
UBLLB
A
A9LA8LA7LA
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
5R
6L
NC
NC
NC
NC
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
BUSY
GND
M/S
BUSY
INT
A
0R
A
1R
A
2R
A
3R
A
4R
NC
NC
NC
NC
L
L
R
R
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
V
GND
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
I/O
NC
NC
17L
11L
12L
13L
14L
15L
16L
17R
NC
NC
100 99 979896
95 94
1
2
8L
3
4
5
6
7
8
9
10
11
CC
0R
1R
2R
CC
3R
4R
5R
6R
8R
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28302931 32353436 37 3833
7R
I/O
I/O
9R
10R
11R
12R
13R
I/O
14R
I/O
I/O
I/O
I/O
15R
GND
I/O
89 8886878593 9284
9091
CY7C0241/0251
39
R
R
16R
OE
GND
R/W
I/O
83 82 81 80 79 78 7 7 76
4241
40
43 44 45 46 47 48
RCERUBRLBR
SEM
[
NC
11RA10R
A
49 50
A9RA8RA7RA6RA
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
5R
NC
NC
NC
NC
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
BUSY
GND
M/S
BUSY
INT
A
0R
A
1R
A
2R
A
3R
A
4R
NC
NC
NC
NC
L
L
R
R
Document #: 38-06035 Rev. *CPage 3 of 21
CY7C024/0241
CY7C025/0251
Pin Definitions
Left PortRight PortDescription
CE
L
R/W
L
OE
L
A
0L–A11/ 12L
I/O
–I/O
0L
15/17L
SEM
SEM
L
UB
L
LB
L
INT
L
BUSY
L
M/S
V
CC
GNDGround
Selection Guide
Maximum Access Time (ns)15253555
Typical Operating Current (mA)190170160150
Typical Standby Current for I
CE
R
R/W
R
OE
R
A0R–A
11/ 12R
I/O0R–I/O
R
UB
R
LB
R
INT
R
BUSY
R
15/17R
Chip Enable
Read/Write Enable
Output Enable
Address
Data Bus Input/Output
Semaphore Enable
Upper Byte Select
Lower Byte Select
Interrupt Flag
Busy Flag
Master or Slave Select
Power
7C024/0241–15
7C025/0251–15
(mA)50403020
SB1
7C024/0241–25
7C025/0251–25
7C024/0241–35
7C025/0251–35
7C024/0241–55
7C025/0251–55
Architecture
The CY7C024/0241 and CY7C025/0251 consist of an array of
4K words of 16/18 bits each and 8K words of 16/18 bits each
of dual-port RAM cells, I/O and address lines, and control
signals (CE
, OE, R/W). These control pins permit independent
access for reads or writes to any location in memory. To handle
simultaneous writes/reads to the same location, a BUSY
provided on each port. Two interrupt (INT
) pins can be utilized
for port-to-port communication. Two semaphore (SEM
pin is
) control
pins are used for allocating shared resources. With the M/S
pin, the CY7C024/0241 and CY7C025/0251 can function as a
master (BUSY
pins are outputs) or as a slave (BUSY pins are
inputs). The CY7C024/0241 and CY7C025/0251 have an
automatic power-down feature controlled by CE
provided with its own output enable control (OE
. Each port is
), which allows
data to be read from the device.
Functional Description
Write Operation
Data must be set up for a duration of t
of R/W
in order to guarantee a valid write. A write operation is
controlled by either the R/W
pin (see Write Cycle No. 1
waveform) or the CE pin (see Write Cycle No. 2 waveform).
Required inputs for non-contention operations are summarized in Ta b l e 1.
If a location is being written to by one port and the opposite
port attempts to read that location, a port-to-port flowthrough
delay must occur before the data is read on the output;
otherwise the data read is not deterministic. Data will be valid
on the port t
after the data is presented on the other port.
DDD
before the rising edge
SD
Read Operation
When reading the device, the user must assert both the OE
and CE pins. Data will be available t
OE
is asserted. If the user of the CY7C024/0241 or
after CE or t
ACE
DOE
after
CY7C025/0251 wishes to access a semaphore flag, then the
SEM pin must be asserted instead of the CE pin, and OE must
also be asserted.
Interrupts
The upper two memory locations may be used for message
passing. The highest memory location (FFF for the
CY7C024/0241, 1FFF for the CY7C025/0251) is the mailbox
for the right port and the second-highest memory location
(FFE for the CY7C024/0241, 1FFE for the CY7C025/0251) is
the mailbox for the left port. When one port writes to the other
port’s mailbox, an interrupt is generated to the owner. The
interrupt is reset when the owner reads the contents of the
mailbox. The message is user defined.
Each port can read the other port’s mailbox without resetting
the interrupt. The active state of the BUSY
signal (to a port)
prevents the port from setting the interrupt to the winning port.
Also, an active BUSY
to a port prevents that port from reading
its own mailbox and thus resetting the interrupt to it.
If your application does not require message passing, do not
connect the interrupt pin to the processor’s interrupt request
input pin.
The operation of the interrupts and their interaction with Busy
are summarized in Table 2.
Document #: 38-06035 Rev. *CPage 4 of 21
CY7C024/0241
CY7C025/0251
Busy
The CY7C024/0241 and CY7C025/0251 provide on-chip
arbitration to resolve simultaneous memory location access
(contention). If both ports’ CE
match occurs within t
determine which port has access. If t
will definitely gain permission to the location, but which one is
not predictable. BUSY will be asserted t
match or t
after CE is taken LOW.
BLC
s are asserted and an address
of each other, the busy logic will
PS
is violated, one port
PS
after an address
BLA
Master/Slave
A M/S
pin is provided in order to expand the word width by
configuring the device as either a master or a slave. The BUSY
output of the master is connected to the BUSY input of the
slave. This will allow the device to interface to a master device
with no external components. Writing to slave devices must be
delayed until after the BUSY
Otherwise, the slave chip may begin a write cycle during a
input has settled (t
BLC
or t
BLA
contention situation.When tied HIGH, the M/S pin allows the
device to be used as a master and, therefore, the BUSY
is an output. BUSY
can then be used to send the arbitration
line
outcome to a slave.
Semaphore Operation
The CY7C024/0241 and CY7C025/0251 provide eight
semaphore latches, which are separate from the dual-port
memory locations. Semaphores are used to reserve resources
that are shared between the two ports.The state of the
semaphore indicates that a resource is in use. For example, if
the left port wants to request a given resource, it sets a latch
by writing a zero to a semaphore location. The left port then
verifies its success in setting the latch by reading it. After
writing to the semaphore, SEM
or OE must be deasserted for
tSOP before attempting to read the semaphore. The
semaphore value will be available t
SWRD
+ t
DOE
after the rising
Table 1. Non-Contending Read/Write
edge of the semaphore write. If the left port was successful
(reads a zero), it assumes control of the shared resource,
otherwise (reads a one) it assumes the right port has control
and continues to poll the semaphore. When the right side has
relinquished control of the semaphore (by writing a one), the
left side will succeed in gaining control of the semaphore. If the
left side no longer requires the semaphore, a one is written to
cancel its request.
Semaphores are accessed by asserting SEM
LOW. The SEM
pin functions as a chip select for the semaphore latches (CE
must remain HIGH during SEM LOW). A0–2 represents the
semaphore address. OE and R/W are used in the same
manner as a normal memory access. When writing or reading
a semaphore, the other address pins have no effect.
When writing to the semaphore, only I/O
written to the left port of an available semaphore, a one will
).
appear at the same semaphore address on the right port. That
is used. If a zero is
0
semaphore can now only be modified by the side showing zero
(the left port in this case). If the left port now relinquishes
control by writing a one to the semaphore, the semaphore will
be set to one for both sides. However, if the right port had
requested the semaphore (written a zero) while the left port
had control, the right port would immediately own the
semaphore as soon as the left port released it. Table 3 shows
sample semaphore operations.
When reading a semaphore, all sixteen/eighteen data lines
output the semaphore value. The read value is latched in an
output register to prevent the semaphore from changing state
during a write from the other port. If both ports attempt to
access the semaphore within t
semaphore will definitely be obtained by one side or the other,
of each other, the
SPS
but there is no guarantee which side will control the
semaphore.
InputsOutputs
R/WOEUBLBSEMI/O0–I/O
[2]
7
I/O8–I/O
[3]
15
OperationCE
HXXXXHHigh ZHigh ZDeselected: Power-Down
XXXHHHHigh ZHigh ZDeselected: Power-Down
LLXLHHHigh ZData InWrite to Upper Byte Only
LLXHLHData InHigh ZWrite to Lower Byte Only
LLXLLHData InData InWrite to Both Bytes
LHLLHHHigh ZData OutRead Upper Byte Only
LHLHLHData OutHigh ZRead Lower Byte Only
LHLLLHData OutData OutRead Both Bytes
XXHXXXHigh ZHigh ZOutputs Disabled
HHLXXLData OutData OutRead Data in Semaphore Flag
XHLHHLData OutData OutRead Data in Semaphore Flag
HXXXLData InData InWrite D
XXHHLData InData InWrite D
into Semaphore Flag
IN0
into Semaphore Flag
IN0
LXXLXLNot Allowed
LXXXLLNot Allowed
Document #: 38-06035 Rev. *CPage 5 of 21
CY7C024/0241
CY7C025/0251
Table 2. Interrupt Operation Example (Assumes BUSYL=BUSYR=HIGH)
[6]
Left PortRight Port
Function
Set Right INTR FlagLLX(1)FFFXXXXXL
Reset Right INTR FlagXXXXXXLL(1)FFFH
Set Left INTL FlagXXXXL
Reset Left INT
FlagXLL(1)FFEH
L
R/WLCELOELA
0L–11L
INTLR/WRCEROERA
[7]
LLX(1)FFEX
[8]
XXX X X
0R–11R
INT
[8]
[7]
Table 3. Semaphore Operation Example
Function
0
–I/O
Left
15/17
I/O0–I/O
15/17
RightStatus
I/O
No action11Semaphore-free
Left port writes 0 to semaphore01Left Port has semaphore token
Right port writes 0 to semaphore01No change. Right side has no write access to semaphore.
Left port writes 1 to semaphore10Right port obtains semaphore token
Left port writes 0 to semaphore10No change. Left port has no write access to semaphore
Right port writes 1 to semaphore01Left port obtains semaphore token
Left port writes 1 to semaphore11Semaphore-free
Right port writes 0 to semaphore10Right port has semaphore token
Right port writes 1 to semaphore11Semaphore-free
Left port writes 0 to semaphore01Left port has semaphore token
Left port writes 1 to semaphore11Semaphore-free
Notes:
6. A
7. If BUSY
8. If BUSY
and A
0L–12L
=L, then no change.
R
=L, then no change.
L
, 1FFF/1FFE for the CY7C025.
0R–12R
R
Document #: 38-06035 Rev. *CPage 6 of 21
CY7C024/0241
CY7C025/0251
Maximum Ratings
[9]
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential............... –0.3V to +7.0V
DC Voltage Applied to Outputs
in High-Z State ............................................... –0.5V to +7.0V
Electrical Characteristics Over the Operating Range
ParameterDescriptionTest Conditions
V
V
V
V
I
I
I
I
I
I
I
OH
OL
IH
IL
IX
OZ
CC
SB1
SB2
SB3
SB4
Output HIGH VoltageVCC = Min., IOH = –4.0 mA2.42.4V
Output LOW VoltageVCC = Min., IOL = 4.0 mA0.40.4V
Input HIGH Voltage2.22.2V
Input LOW Voltage–0.70.8–0.70.8V
Input Leakage Current GND ≤ VI ≤ V
CC
Output Leakage Current Output Disabled,
GND ≤ V
Operating CurrentVCC = Max., I
Outputs Disabled
Standby Current
(Both Ports TTL Levels)
Standby Current
(One Port TTL Level)
Standby Current
(Both Ports CMOS
Levels)
Standby Current
(Both Ports CMOS
Levels)
CEL and CER ≥ VIH,
f = f
CEL or CER ≥ VIH,
f = f
Both Ports CE and CER ≥
V
CC
or V
One Port CE
CE
R
V
IN
Active Port Outputs, f = f
≤ V
O
CC
= 0 mA,
OUT
[11]
MAX
[11]
MAX
– 0.2V, VIN ≥ VCC – 0.2V
≤ 0.2V, f = 0
IN
≥ VCC – 0.2V,
[11]
or
L
≥ VCC – 0.2V or VIN ≤ 0.2V,
MAX
DC Input Voltage
[10]
........................................–0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Latch-up Current.................................................... > 200 mA
Operating Range
RangeAmbient TemperatureV
Commercial0°C to +70°C 5V ± 10%
Industrial–40°C to +85°C 5V ± 10%
7C024/0241–15
7C025/0251–15
7C024/0241–25
7C025/0251–25
–10+10–10+10µA
–10+10–10+10µA
Com’l190300170250mA
Ind200320170290
Com’l50704060mA
Ind507075
Com’l120180100150mA
Ind120180100170
Com’l315315mA
Ind315315
Com’l11016090130mA
Ind11016090150
[11]
CC
UnitMin. Typ. Max. Min. Typ. Max.
Electrical Characteristics Over the Operating Range
7C024/0241–35
7C025/0251–35
ParameterDescriptionTest Conditions
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Notes:
9. The voltage on any input or sI/O pin cannot exceed the power pin during power-up
10. Pulse width < 20 ns.
11. f
MAX
standby I
Output HIGH VoltageVCC = Min., IOH = –4.0 mA2.42.4V
Output LOW VoltageVCC = Min., IOL = 4.0 mA0.40.4V
Input HIGH Voltage2.22.2V
Input LOW Voltage–0.70.8–0.70.8V
Input Leakage CurrentGND ≤ VI ≤ V
Output Leakage Current Output Disabled, GND ≤ VO ≤ V
= 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level
.
SB3
CC
CC
–10+10–10+10µA
–10+10–10+10µA
Document #: 38-06035 Rev. *CPage 7 of 21
7C024/0241–55
7C025/0251–55
UnitMin. Typ. Max. Min. Typ. Max.
Electrical Characteristics Over the Operating Range (continued)
ParameterDescriptionTest Conditions
I
I
I
I
I
CC
SB1
SB2
SB3
SB4
Operating CurrentVCC = Max., I
Outputs Disabled
Standby Current
(Both Ports TTL Levels)
Standby Current
(One Port TTL Level)
Standby Current
(Both Ports CMOS
Levels)
Standby Current
(Both Ports CMOS
Levels)
CEL and CER ≥ VIH,
f = f
CEL or CER ≥ VIH,
f = f
MAX
MAX
[11]
[11]
Both Ports CE and CER ≥
V
– 0.2V, VIN ≥ VCC – 0.2V
CC
≤ 0.2V, f = 0
or V
IN
One Port CE
CE
≥ VCC – 0.2V,
R
V
≥ VCC – 0.2V or VIN ≤ 0.2V,
IN
Active Port Outputs, f = f
L
OUT
or
= 0 mA,
[11]
MAX
[11]
CY7C024/0241
CY7C025/0251
7C024/0241–35
7C025/0251–35
Com’l160230150230mA
Ind160260150260
Com’l30502050mA
Ind30652065
Com’l8513575135mA
Ind8515075150
Com’l315315mA
Ind315315
Com’l8012070120mA
Ind8013570135
7C024/0241–55
7C025/0251–55
UnitMin. Typ. Max. Min. Typ. Max.
Capacitance
[12]
ParameterDescriptionTest ConditionsMax.Unit
C
C
IN
OUT
Input CapacitanceTA = 25×C, f = 1 MHz,
Output Capacitance10pF
AC Test Loads and Waveforms
5V
R1 = 893Ω
OUTPUT
C= 30
pF
(a) Normal Load (Load 1)
OUTPUT
Load (Load 2)
R2 = 347Ω
C = 30 pF
V
= 5.0V
CC
R
OUTPUT
C= 30pF
TH
(b) Thévenin Equivalent (Load 1)
ALL INPUTPULSES
3.0V
GND
≤
10%
3ns
90%
= 250Ω
V
90%
TH
10%
=1.4V
ns
3
≤
10pF
OUTPUT
C= 5pF
(c) Three-State Delay (Load
5V
R1 = 893Ω
R2 = 347Ω
3)
Note:
12. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-06035 Rev. *CPage 8 of 21
CY7C024/0241
CY7C025/0251
Switching Characteristics Over the Operating Range
7C024/0241–15
7C025/0251–15
ParameterDescription
[13]
7C024/0241–25
7C025/0251–25
7C024/0241–35
7C025/0251–35
7C024/0241–55
7C025/0251–55
UnitMin.Max.Min.Max.Min.Max.Min.Max.
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
ABE
[14]
[15, 16, 17]
[15, 16, 17]
[15, 16, 17]
[15, 16, 17]
[17]
[17]
[14]
Read Cycle Time15253555ns
Address to Data Valid15253555ns
Output Hold From Address
33 33ns
Change
CE LOW to Data Valid15253555ns
OE LOW to Data Valid10132025ns
OE Low to Low Z3333ns
OE HIGH to High Z10152025ns
CE LOW to Low Z3333ns
CE HIGH to High Z10152025ns
CE LOW to Power-Up0000ns
CE HIGH to Power-Down15252555ns
Byte Enable Access Time15253555ns
Write Cycle
t
WC
[14]
t
SCE
t
AW
t
HA
[14]
t
SA
t
PWE
t
SD
t
HD
[16, 17]
t
HZWE
[16, 17]
t
LZWE
[18]
t
WDD
[18]
t
DDD
Notes:
13. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OI/IOH
14. To access RAM, CE
15. At any given temperature and voltage condition for any given device, t
16. Test conditions used are Load 3.
17. This parameter is guaranteed but not tested.
18. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
Write Cycle Time15253555ns
CE LOW to Write End12203035ns
Address Set-Up to Write End12203035ns
Address Hold From Write
00 00ns
End
Address Set-up to Write Start0000ns
Write Pulse Width12202535ns
Data Set-Up to Write End10151520ns
Data Hold From Write End0000ns
R/W LOW to High Z10152025ns
R/W HIGH to Low Z0000ns
Write Pulse to Data Delay30506070ns
Write Data Valid to Read
25353545ns
Data Valid
and 30-pF load capacitance.
=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
HZCE
is less than t
LZCE
and t
HZOE
is less than t
LZOE
.
SCE
time.
Document #: 38-06035 Rev. *CPage 9 of 21
CY7C024/0241
CY7C025/0251
Switching Characteristics Over the Operating Range (continued)
7C024/0241–15
7C025/0251–15
ParameterDescription
Busy Timing
t
BLA
t
BHA
t
BLC
t
BHC
t
PS
t
WB
t
WH
[20]
t
BDD
Interrupt Timing
t
INS
t
INR
[19]
BUSY LOW from Address
Match
BUSY HIGH from Address
Mismatch
BUSY LOW from CE LOW15202040ns
BUSY HIGH from CE HIGH15202035ns
Port Set-up for Priority5555ns
R/W HIGH after BUSY (Slave)0000ns
R/W HIGH after BUSY HIGH
13203040ns
(Slave)
BUSY HIGH to Data ValidNote 20Note 20Note 20Note 20ns
[19]
INT Set Time15202530ns
INT Reset Time15202530ns
Semaphore Timing
t
SOP
t
SWRD
t
SPS
t
SAA
SEM Flag Update Pulse (OE
or SEM
)
SEM Flag Write to Read Time5101015ns
SEM Flag Contention
Window
SEM Address Access Time15253555ns
10121520ns
5101015ns
Data Retention Mode
The CY7C024/0241 is designed with battery backup in mind.
Data retention voltage and supply current are guaranteed over
temperature. The following rules insure data retention:
1. Chip enable (CE
within V
2. CE
CC
must be kept between VCC – 0.2V and 70% of VCC
during the power-up and power-down transitions.
3. The RAM can begin operation >t
minimum operating voltage (4.5V).
Notes:
19. Test conditions used are Load 2.
20. t
is a calculated parameter and is the greater of t
BDD
21. CE
= VCC, Vin = GND to VCC, TA = 25°C. This parameter is guaranteed but not tested.
) must be held HIGH during data retention,
to VCC – 0.2V.
after VCC reaches the
RC
– t
WDD
(actual) or t
PWE
7C024/0241–25
7C025/0251–25
15202045ns
15202040ns
Timing
V
CC
CE
ParameterTest Conditions
ICC
DR1
– t
(actual).
DDD
SD
[13]
7C024/0241–35
7C025/0251–35
Data Retention Mode
4.5V
V
> 2.0V
CC
V
to VCC– 0.2V
CC
7C024/0241–55
7C025/0251–55
4.5V
[21]
t
RC
V
IH
Max.Unit
@ VCCDR = 2V1.5mA
UnitMin.Max.Min.Max.Min.Max.Min.Max.
Document #: 38-06035 Rev. *CPage 10 of 21
Switching Waveforms
Read Cycle No. 1 (Either Port Address Access)
ADDRESS
t
AA
t
OHA
DATA OUT
[22, 23, 24]
CY7C024/0241
CY7C025/0251
t
RC
t
OHA
DATA VALIDPREVIOUS DATA VALID
Read Cycle No. 2 (Either Port CE/OE Access)
CE and
LB
or UB
OE
DATA OUT
t
I
CURRENT
I
CC
SB
Read Cycle No. 3 (Either Port)
ADDRESS
UB or LB
[22, 24, 25, 25, 26]
PU
t
AA
t
LZCE
[22, 25, 26]
t
LZOE
t
LZCE
t
ABE
t
t
ACE
RC
t
DOE
t
HZCE
DATA VALID
t
PD
t
OHA
t
HZOE
t
HZCE
CE
t
LZCE
t
ACE
t
HZCE
DATA OUT
Notes:
is HIGH for read cycles
22. R/W
23. Device is continuously selected CE
24. OE
= VIL.
25. Address valid prior to or coincident with CE
26. To access RAM, CE
= VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL.
= VIL and UB or LB = VIL. This waveform cannot be used for semaphore reads.
transition LOW.
Document #: 38-06035 Rev. *CPage 11 of 21
Switching Waveforms (continued)
CY7C024/0241
CY7C025/0251
Write Cycle No. 1: R/W Controlled Timing
ADDRESS
OE
[31,32]
CE
t
SA
R/W
DATA OUT
NOTE 34
DATA IN
Write Cycle No. 2: CE Controlled Timing
ADDRESS
[27, 28,29, 30]
t
t
AW
[33]
t
HZWE
[27, 28, 29,35]
t
WC
WC
t
PWE
[30]
[33]
t
HZOE
t
HA
t
LZWE
NOTE 34
t
SD
t
HD
t
AW
[31,32]
CE
t
SA
t
SCE
t
HA
R/W
t
SD
t
HD
DATA IN
Notes:
must be HIGH during all address transitions.
27. R/W
28. A write occurs during the overlap (t
29. t
is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
HA
is LOW during a R/W-controlled write cycle, the write pulse width must be the larger of t
30. If OE
placed on the bus for the required t
the specified t
31. To access RAM, CE
32. To access upper byte, CE
To access lower byte, CE
33. Transition is measured ±500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
34. During this period, the I/O pins are in the output state, and input signals must not be applied.
35. If the CE
.
PWE
= VIL, SEM = VIH.
= VIL, UB = VIL, SEM = VIH.
= VIL, LB = VIL, SEM = VIH.
or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
or t
SCE
SD
) of a LOW CE or SEM and a LOW UB or LB.
PWE
or (t
. If OE is HIGH during an R/W-controlled write cycle, this requirement does not apply and the write pulse can be as short as
PWE
+ tSD) to allow the I/O drivers to turn off and data to be
HZWE
Document #: 38-06035 Rev. *CPage 12 of 21
Switching Waveforms (continued)
Semaphore Read After Write Timing, Either Side
A0–A
SEM
I/O
R/W
2
0
t
SA
VALID ADRESSVALID ADRESS
t
AW
t
SCE
t
SD
DATAINVAL ID
t
PWE
CY7C024/0241
CY7C025/0251
[36]
VAL ID
t
OHA
t
AA
t
t
HA
t
SOP
t
HD
ACE
DATA
OUT
OE
WRITE CYCLEREAD CYCLE
Timing Diagram of Semaphore Contention
A0L–A
2L
R/W
L
SEM
L
A0R–A
2R
R/W
R
SEM
R
[37, 38, 39]
MATCH
t
SPS
MATCH
t
SWRD
t
SOP
t
DOE
Notes:
= HIGH for the duration of the above timing (both write and read cycle).