CYPRESS CY62256VN User Manual
CY62256VN
256K (32K x 8) Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automot ive-E: –40°C to 125°C
• Speed: 70 ns
• Low voltage range: 2.7V–3.6V
• Low active power and standby power
• Easy memory expansion with CE
and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in standard Pb-free and non Pb-free 28-lead
(300-mil) narrow SOIC, 28-lead TSOP-I and 28-lead
Reverse TSOP-I packages
Logic Block Diagram
Functional Description
[1]
The CY62256VN family is composed of two high-performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE
) and active LOW output enable (OE) and tri-state drivers.
These devices have an automatic power-down feature,
reducing the power consumption by over 99% when
deselected.
An active LOW write enable signal (WE
writing/reading operation of the memory. When CE
) controls the
and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
through I/O7) is written into the memory location
0
addressed by the address present on the address pins (A
through A14). Reading the device is accomplished by selecting
the device and enabling the outputs, CE
while WE
remains inactive or HIGH. Under these conditions,
and OE active LOW,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE
) is HIGH.
0
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
3
2
ROW DECODER
A
A
CE
WE
OE
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
32K x 8
ARRA
COLUMN
DECODER
14
A13A11A
A
Y
SENSE AMPS
POWER
DOWN
0
1
12
A
A
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06512 Rev. *A Revised August 3, 2006
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CY62256VN
Product Portfolio
Power Dissipation
VCC Range (V)
Product
Range Min. Typ.
[2]
Max. Typ.
CY62256VNLL Com’l 2.7 3.0 3.6 11 30 0.1 5
CY62256VNLL Ind’l 2.7 3.0 3.6 11 30 0.1 10
CY62256VNLL Automotive-A 2.7 3.0 3.6 11 30 0.1 10
CY62256VNLL Automotive-E 2.7 3.0 3.6 11 30 0.1 130
Pin Configurations
Narrow SOIC
Top View
Operating, ICC (mA) Standby, I
[2]
Max. Typ.
[2]
SB2
(µA)
Max.
A
A
A
A
A
A
10
A
11
A
12
A
13
A
14
I/O
I/O
I/O
GND
1
5
2
6
3
7
4
8
5
9
6
7
8
9
10
11
0
12
1
13
2
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
I/O
I/O
I/O
I/O
21
22
OE
A
23
1
A
24
2
A
25
3
A
26
4
27
WE
28
V
CC
A
1
5
A
2
6
3
A7
A
4
8
5
A
7
6
5
9
A
6
10
A
7
11
TSOP I
Top View
(not to scale)
A
0
20
CE
19
I/O
7
18
I/O
6
17
I/O
5
16
I/O
4
I/O
15
3
14
GND
13
I/O
2
12
I/O
1
11
I/O
0
10
A
14
9
A
13
8
A
12
A
A
V
WE
OE
A
A
A7
A
A
CC
A
A
A
A
11
10
9
8
6
5
4
3
2
1
4
3
Pin Definitions
Pin Number Type Description
1–10, 21, 23–26 Input A
1 1–13, 15–19 Input/Output I/O
27 Input/Control WE
20 Input/Control CE
22 Input/Control OE
outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins
14 Ground GND. Ground for the device
28 Power Supply V
Note:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
. Address Inputs
0–A14
–I/O7. Data lines. Used as input or output lines depending on operation
0
. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted
. When LOW, selects the chip. When HIGH, deselects the chip
. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
. Power supply for the device
CC
7
6
5
4
3
2
1
28
27
26
25
24
23
22
CC
TSOP I
Reverse Pinout
Top View
(not to scale)
= VCC Typ., TA = 25°C, and t
10
11
12
13
14
15
16
17
18
19
20
21
8
9
AA
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
= 70 ns.
Document #: 001-06512 Rev. *A Page 2 of 12
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CY62256VN
Maximum Ratings
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Latch-up Current...................................... ... ........... > 200 mA
Operating Range
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)................................ .. ... .....–0.5V to + 4.6V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
[3]
....................................–0.5V to VCC + 0.5V
[3]
.................................–0.5V to VCC + 0.5V
CY62256VN Commercial 0°C to +70°C 2.7V to 3.6V
Output Current into Outputs (LOW).............................20 mA
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
I
SB2
Notes:
3. V
(min.) = –2.0V for pulse durations of less than 20 ns.
IL
is the “Instant-On” case temperature
4. T
A
Output HIGH Voltage IOH = −1.0 mA V
Output LOW Voltage IOL = 2.1 mA V
Input HIGH Voltage 2.2 V
Input Leakage Voltage –0.5 0.8 V
Input Leakage Current GND < VIN < V
Output Leakage Current GND < V
Disabled
VCC Operating Supply
Current
Automatic CE
Power down Current TTL Inputs
Automatic CE
Power-down CurrentCMOS Inputs
VCC = 3.6V, I
f = f
MAX
VCC = 3.6V, CE > VIH,
> VIH or VIN < VIL, f = f
V
IN
V
= 3.6V , CE > VCC – 0.3V
CC
V
> VCC – 0.3V or VIN <
IN
0.3V, f = 0
CC
< VCC, Output
IN
= 0 mA,
OUT
= 1/t
RC
MAX
Ambient
Device Range
T emperature
Industrial −40
Automotive-A −40
[4]
(TA)
°C to +85°C
°C to +85°C
V
CC
Automotive-E −40°C to +125°C
-70
[2]
= 2.7V 2.4 V
CC
= 2.7V 0.4 V
CC
Max.
+ 0.3V V
CC
UnitMin. Typ.
Com’l/Ind’l/Auto-A –1 +1 µA
Auto-E –10 +10 µA
Com’l/Ind’l/Auto-A –1 +1 µA
Auto-E –10 +10 µA
All Ranges 11 30 mA
All Ranges 100 300 µA
Com’l 0.1 5 µA
Ind’l/Auto-A 10
Auto-E 130
Document #: 001-06512 Rev. *A Page 3 of 12
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CY62256VN
Capacitance
[5]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Thermal Resistance
Input Capacitance TA = 25°C, f = 1 MHz,
V
= 3.0V
Output Capacitance 8 pF
[5]
CC
6pF
Parameter Description Test Conditions SOIC TSOPI RTSOPI Unit
Θ
JA
Θ
JC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
68.45 87.62 87.62 °C/W
26.94 23.73 23.73 °C/W
AC Test Loads and Waveforms
50 pF
SCOPE
R1
V
CC
<5ns
R
th
10%
R2
Equivalent to: THÉ VENINEQUIVALENT
OUTPUT V
GND
ALL INPUT PULSES
90%
th
90%
10%
<5ns
V
CC
OUTPUT
INCLUDING
JIG AND
Parameter Value Units
R1 1100 Ohms
R2 1500 Ohms
RTH 645 Ohms
VTH 1.750 Volts
Data Retention Characteristics (Over the Operating Range)
Parameter Description Conditions
V
DR
I
CCDR
t
CDR
[5]
t
R
[6]
VCC for Data Retention 1.4 V
Data Retention Current VCC = 1.4V,
CE
> VCC – 0.3V,
> VCC – 0.3V
V
IN
or V
< 0.3V
IN
Chip Deselect to Data
Retention Time
Operation Recovery Time t
Data Retention Waveform
DATA RETENTION MODE
V
CC
CE
t
CDR
VDR> 1.4V
[6]
Min. T yp.
[2]
Max. Unit
Com’l 0.1 3 µA
Ind’l/Auto-A 6
Auto-E 50
0ns
RC
1.8V1.8V
t
R
ns
Note:
5. Tested initially and after any design or proc ess changes that may affect these parameters.
6. No input may exceed V
CC
+ 0.3V.
Document #: 001-06512 Rev. *A Page 4 of 12
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