CYPRESS CY62256V User Manual

CY62256V
256K (32K x 8) Static RAM
Features
• Temperature Ranges — Commercial: 0°C to 70°C
— Automotive: –40°C to 125°C
• Speed: 70 ns and 100 ns
• Low voltage range: — CY62256V (2.7V–3.6V)
— CY62256V25 (2.3V–2.7V)
• Low active power and standby power
• Easy memory expansion with CE
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package available in a standard 450-mil-wide (300-mil
body width) 28-lead narrow SOIC, 28-lead TSOP-1, and reverse 28-lead TSOP-1 package
Logic Block Diagram
and OE features
Functional Description
[1]
The CY62256V family is composed of two high-performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE
) and active LOW output enable (OE) and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected.
An active LOW write enable signal (WE writing/reading operation of the memory. When CE
) controls the
and WE inputs are both LOW, data on the eight data input/output pins (I/O
through I/O7) is written into the memory location
0
addressed by the address present on the address pins (A through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE while WE
remains inactive or HIGH. Under these conditions,
and OE active LOW,
the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE
) is HIGH.
0
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4 3 2
ROW DECODER
A A
CE WE
OE
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
512 × 512
ARRA
COLUMN
DECODER
14
A13A11A
A
Y
SENSE AMPS
POWER
DOWN
0
1
12
A
A
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600 Document #: 38-05057 Rev. *D Revised June 28, 2004
CY62256V
Product Portfolio
Power Dissipation
Product
VCC Range (V) Speed
Range Min. Typ.
[2]
Max. (ns) Typ.
Operating, ICC (mA) Standby, I
[2]
Max. Typ.
[2]
SB2
(µA)
Max.
CY62256VLL Com’l / Ind’l 2.7 3.0 3.6 70 11 30 0.1 5 CY62256VLL Automotive 2.7 3.0 3.6 70 11 30 0.1 130 CY62256V25LL Com’l 2.3 2.5 2.7 100 9 15 0.1 4
Pin Configurations
Narrow SOIC
Top View
A A
A A
A
A A A A A
I/O I/O I/O
GND
10 11 12 13 14
1
5
2
6
3
7
4
8
5
9
6 7 8 9 10 11
0
12
1
13
2
14
28 27 26 25
24 23
22 21 20 19
18 17
16 15
V
CC
WE
A
4
A
3
A
2
A
1
OE A
0
CE I/O
I/O I/O I/O I/O
A
7
11
A
6
10
A
5
9
A
4
8
3
A
7
2
A
6
1
A
5
28
V
CC
27
WE
26
A
7 6
5 4
A A A
OE
4
25
3
24
2
23
1
22
TSOP I
Reverse Pinout
Top Vi e w
(not to scale)
8
A
12
9
A
13
A
10
14
11
I/O
0
12
I/O
1
13
I/O
2
14
GND
15
I/O
3
16
I/O
4
17
I/O
5
18
I/O
6
19
I/O
7
20
CE
21
A
0
OE
WE
V
A A
A A
A A
CC
A A
A A A
10 11
22 23
1
24
2
25
3
26
4
27 28 1
5 6
7
8 9
2 3 4 5 6 7
(not to scale)
3
Pin Definitions
Pin Number Type Description
1-10, 21, 23-26 Input A0-A14. Address Inputs 11-13, 15-19 Input/Output I/O 27 Input/Control WE
20 Input/Control CE 22 Input/Control OE
14 Ground GND. Ground for the device 28 Power Supply Vcc. Power supply for the device
Notes:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
-I/O7. Data lines. Used as input or output lines depending on operation
0
. When selected LOW, a WRITE is conducted. When selected HIGH, a READ
is conducted
. When LOW, selects the chip. When HIGH, deselects the chip
. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins
TSOP I
Top V iew
= VCC Typ., TA = 25°C, and t
CC
21
A
0
20
CE
19
I/O
7
18
I/O
6
17
I/O
5
16
I/O
4
I/O
15
3
14
GND
13
I/O
2
12
I/O
1
11
I/O
0
10
A
14
9
A
13
8
A
12
= 70 ns.
AA
Document #: 38-05057 Rev. *D Page 2 of 13
CY62256V
Maximum Ratings
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guide­lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Latch-up Current.................................................... > 200 mA
Operating Range
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ...........................................–0.5V to +4.6V
DC Voltage Applied to Outputs in High-Z State
DC Input Voltage
[3]
....................................–0.5V to VCC + 0.5V
[3]
.................................–0.5V to VCC + 0.5V
Output Current into Outputs (LOW) .............................20 mA
Device Range
CY62256V Commercial 0°C to +70°C 2.7V to
CY62256V25 Commercial 0
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
V V V
V I
IX
I
OZ
I
CC
I
SB1
I
SB2
OH
OL
IH
IL
Output HIGH Voltage IOH = 1.0 mA V Output LOW Voltage IOL = 2.1 mA V Input HIGH Voltage 2.2 V
Input Leakage Voltage –0.5 0.8 V Input Leakage Current GND < VIN < V
Output Leakage Current GND < V
VCC Operating Supply Current
Automatic CE Power-down Current— TTL Inputs
Automatic CE Power-down Current— CMOS Inputs
VCC = 3.6V, I f = f
MAX
VCC = 3.6V, CE > VIH, V
> VIH or VIN < VIL, f = f
IN
V
= 3.6V, CE > VCC – 0.3V
CC
V
> VCC – 0.3V or VIN < 0.3V, f = 0
IN
CC
< VCC, Output Disabled Com’l, Ind’l –1 +1 µA
IN
= 0 mA,
OUT
= 1/t
RC
MAX
Ambient
Temperature
Industrial 40
Automotive 40
(TA)
+85
+125
[4]
°C to
°C
°C to
°C
V
CC
3.6V
°C to +70°C 2.3V to
2.7V
CY62256V-70
[2]
Max.
= 2.7V 2.4 V
CC
= 2.7V 0.4 V
CC
+0.3V
Com’l, Ind’l –1 +1 µA Automotive -10 +10 µA
Automotive -10 +10 µA All ranges 11 30 mA
All ranges 100 300 µA
Com’l 0.1 5 Ind’l 10 Automotive 130
CC
UnitMin. Typ.
V
Electrical Characteristics Over the Operating Range
CY62256V25-100
[2]
Parameter Description Test Conditions
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Notes:
3. V
(min.) = –2.0V for pulse durations of less than 20 ns.
IL
is the “Instant-On” case temperature
4. T
A
Output HIGH Voltage IOH =0.1 mA Vcc=2.3V 2 V Output LOW Voltage IOL = 0.1 mA Vcc= 2.3V 0.4 V Input HIGH Voltage 1.7 Vcc +
Input LOW Voltage –0.3 0.7 V Input Leakage Current GND < VIN < V Output Leakage Current GND < V
< VCC, Output Disabled –1 +1 µA
IN
CC
–1 +1 µA
Document #: 38-05057 Rev. *D Page 3 of 13
Max.
0.3V
UnitMin. Typ.
V
Electrical Characteristics Over the Operating Range (continued)
Parameter Description Test Conditions
I
CC
I
SB1
I
SB2
Capacitance
VCC Operating Supply Current VCC = 2.7V, I
Automatic CE Power-down Current— TTL Inputs
Automatic CE Power-down Current — CMOS Inputs
[5]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Input Capacitance TA = 25°C, f = 1 MHz, Output Capacitance 8 pF
AC Test Loads and Waveforms
V
CC
OUTPUT
INCLUDING
JIG AND
R1
50 pF
SCOPE
= 1/t
RC
V
= 2.7V, CE > VIH,
CC
> VIH or VIN < VIL, f = f
V
IN
V
= 2.7V, CE > VCC 0.3V
CC
> VCC – 0.3V or VIN < 0.3V, f = 0
V
IN
R2
Equivalent to: THÉ VENIN EQUIVALENT
OUTPUT V
V
OUT
CC
= 3.0V
= 0 mA, f = f
V
CC
<5ns
R
th
10%
GND
CY62256V
CY62256V25-100
[2]
Com’l, Ind’l 9 15 mA
MAX
Com’l, Ind’l 75 225 µA
MAX
Com’l 0.1 4 Ind’l 8
6pF
ALL INPUT PULSES
90%
th
90%
10%
<5ns
Max.
UnitMin. Typ.
Parameter 3.3V 2.5V Units
R1 1100 16600 Ohms
R2 1500 15400 Ohms RTH 645 8000 Ohms VTH 1.750 1.20 Volts
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05057 Rev. *D Page 4 of 13
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