How it Works
Cypress
Loading...
CY62157ESL
User Manual
12 pgs339.61 Kb0
Table of contents
Loading...

Cypress CY62157ESL User Manual

CY62157ESL MoBL
®
8-Mbit (512K x 16) Static RAM

Features

512K x 16
RAM Array
IO
0
–IO
7
ROW DECODER
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A11A12A
13
A
14
A
15
SENSE AMPS
DATA IN DRIVERS
OE
A
4
A
3
IO8–IO
15
WE
BLE
BHE
A
16
A
0
A
1
A
17
A
9
A
10
A
18
CE
Power Dow n
Circuit
BHE BLE
CE
■ Very high speed: 45 ns
■ Ultra low standby power ❐ Typical Standby current: 2 μA ❐ Maximum Standby current: 8 μA
■ Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz
■ Easy memory expansion with CE and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Available in Pb-free 44-pin TSOP II package

Functional Description

The CY62157ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL
®
) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device

Logic Block Diagram

into standby mode when deselected (CE BLE
are HIGH). The input or output pins (IO0 through IO15) are
HIGH or both BHE and
placed in a high impedance state when:
■ Deselected (CE
■ Outputs are disabled (OE HIGH)
■ Both Byte High Enable and Byte Low Enable are disabled
(BHE
, BLE HIGH)
■ Write operation is active (CE LOW and WE LOW)
To write to the device, take Chip Enable (CE (WE
) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO specified on the address pins (A Enable (BHE
HIGH)
) and Write Enable
through IO7) is written into the location
0
) is LOW, then data from IO pins (IO8 through IO15)
through A18). If Byte High
0
is written into the location specified on the address pins (A through A18).
To read from the device, take Chip Enable (CE Enable (OE Byte Low Enable (BLE
) LOW while forcing the Write Enable (WE) HIGH. If
) is LOW, then data from the memory location specified by the address pins appear on IO Byte High Enable (BHE appears on IO complete description of read and write modes.
to IO15. See the Truth Table on page 10 for a
8
) is LOW, then data from memory
) and Output
to IO7. If
0
For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
0
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document #: 001-43141 Rev. ** Revised January 04, 2008
[+] Feedback [+] Feedback
CY62157ESL MoBL
®

Pin Configuration

1 2 3 4 5 6 7 8 9
11
14
31
32
36 35 34 33
37
40 39 38
12 13
41
44 43 42
16
15
29
30
A
5
18
17
20
19
27
28
25
26
22
21
23
24
A
6
A
7
A
3
A
2
A
1
A
0
A
17
A
4
A
9
A
10
A
11
A
12
A
15
A
16
OE BHE BLE
CE
WE
IO
0
IO
1
IO
2
IO
3
IO
4
IO
5
IO
6
IO
7
IO
8
IO
9
IO
10
IO
11
IO
12
IO
13
IO
14
IO
15
V
CC
V
CC
V
SS
V
SS
10
A
18
A
14
A
8
A
13
Notes
1. Datasheet specifications are not guaranteed for V
CC
in the range of 3.6V to 4.5V.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3V, and VCC = 5V, TA = 25°C.
Figure 1. 44-Pin TSOP II (Top View)

Product Portfolio

Product Range VCC Range (V)
[1]
CY62157ESL Industrial 2.2V–3.6V and 4.5V–5.5V 45 1.8 3 18 25 2 8
Document #: 001-43141 Rev. ** Page 2 of 12
Speed
(ns)
Typ
Power Dissipation
Operating ICC, (mA)
f = 1MHz f = f
[2]
Max Typ
max
[2]
Max Typ
Standby, I
(μA)
[2]
SB2
Max
[+] Feedback [+] Feedback
CY62157ESL MoBL
®

Maximum Ratings

Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = VCC + 0.75V for pulse durations less than 20 ns.
5. Full Device AC operation assumes a 100 μs ramp time from 0 to V
CC
(min) and 200 μs wait time after VCC stabilization.
Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.
Storage Temperature.................................. –65°C to +150°C
Ambient Temperature with
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Latch up Current............................................... .......>200 mA

Operating Range

Power Applied ............................................–55°C to +125°C
Supply Voltage to Ground Potential..................–0.5V to 6.0V
DC Voltage Applied to Outputs in High-Z State
DC Input Voltage
[3, 4]
...........................................–0.5V to 6.0V
[3, 4]
........................................–0.5V to 6.0V

Electrical Characteristics

Over the Operating Range
Parameter Description Test Conditions
V
V
V
V
I
IX
I
OZ
I
CC
I
SB1
I
SB2
OH
OL
IH
IL
Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 V
2.7 <
VCC < 3.6 IOH = –1.0 mA 2.4
4.5 <
VCC < 5.5 IOH = –1.0 mA 2.4
Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 V
2.7 <
VCC < 3.6 IOL = 2.1mA 0.4
4.5 <
VCC < 5.5 IOL = 2.1mA 0.4
Input HIGH Voltage 2.2 < VCC < 2.7 1.8 V
2.7 <
VCC < 3.6 2.2 V
4.5 <
VCC < 5.5 2.2 V
Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.6 V
2.7 <
VCC < 3.6 –0.3 0.8
4.5 <
VCC < 5.5 –0.5 0.8
Input Leakage Current GND < VI < V
CC
Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 μA VCC Operating Supply
Current
f = f
= 1/t
max
RC
f = 1 MHz 1.8 3
VCC = V I
OUT
CMOS levels
Automatic CE Power down Current — CMOS Inputs
Automatic CE Power down Current — CMOS
CE
> V
− 0.2V, V
CC
f = f f = 0 (OE
CE f = 0, V
(Address and Data Only),
max
, BHE, BLE and WE),
> VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,
V
=
CC
CC(max)
>
V
IN
– 0.2V or V
CC
Inputs
Device Range
Ambient
Temperature
[5]
V
CC
CY62157ESL Industrial –40°C to +85°C 2.2V–3.6V,
and
4.5V–5.5V
45 ns
[2]
Max
+ 0.3 V
CC
+ 0.3
CC
+ 0.5
CC
UnitMin Typ
–1 +1 μA
CCmax
18 25 mA
= 0 mA,
< 0.2V,
IN
= V
V
CC
CC(max)
28μA
28μA
Document #: 001-43141 Rev. ** Page 3 of 12
[+] Feedback [+] Feedback
CY62157ESL MoBL
®

Capacitance

VCC V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
TH
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
C C
IN OUT
Input Capacitance TA = 25°C, f = 1 MHz, VCC = V
CC(typ)
10 pF
Output Capacitance 10 pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions TSOP II Unit
Θ
Θ
Thermal Resistance
JA
(Junction to Ambient) Thermal Resistance
JC
(Junction to Case)
Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit board
77 °C/W
13 °C/W

AC Test Loads and Waveforms

Parameters 2.5V 3.0V 5.0V Unit
R1 16667 1103 1800 Ω
R2 15385 1554 990 Ω R V
TH TH
8000 645 639 Ω
1.20 1.75 1.77 V
Document #: 001-43141 Rev. ** Page 4 of 12
[+] Feedback [+] Feedback
Loading...
+ 8 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use