Cypress CY62148ESL User Manual
CY62148ESL MoBL
®
4-Mbit (512K x 8) Static RAM
Features
A
0
IO
0
IO
7
IO
1
IO
2
IO
3
IO
4
IO
5
IO
6
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
SENSE AMPS
POWER
DOWN
CE
WE
OE
A
13
A
14
A
15
A16A
17
ROW DECODER
COLUMN DECODER
512K x 8
ARRAY
INPUT BUFFER
A
10
A
11
A
12
A
18
Logic Block Diagram
■
Very high speed: 55 ns
■
Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V
■
Ultra low standby power
❐
Typical standby current: 1 μA
❐
Maximum standby current: 7 μA
■
Ultra low active power
❐
Typical active current: 2 mA at f = 1 MHz
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Available in Pb-free 32-pin STSOP package
Functional Description
The CY62148ESL is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. Placing the device into standby mode reduces
power consumption by more than 99 percent when deselected
(CE
HIGH). The eight input and output pins (IO0 through IO7) are
placed in a high impedance state when the device is deselected
(CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE
LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
) inputs LOW. Data on the eight IO pins (IO0 through IO7) is
(WE
then written into the location specified on the add ress pins (A
through A18).
To read from the device, take Chip Enable (CE
Enable (OE
) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the IO pins.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
®
) in portable
) and Output
0
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document #: 001-50045 Rev. ** Revised January 21, 2009
[+] Feedback
CY62148ESL MoBL
®
Pin Configuration
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
A
11
A
9
A
8
A
13
A
17
A
15
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
WE
V
CC
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
A
0
A
1
A
2
A
3
A
10
OE
CE
1
IO
0
IO
1
IO
2
IO
3
IO
4
IO
5
IO
6
IO
7
GND
STSOP
Top View
(not to scale)
Notes
1. Data sheet specifications are not guaranteed for V
CC
in the range of 3.6V to 4.5V.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, TA = 25°C.
Figure 1. 32-Pin STSOP (Top View)
Product Portfolio
Power Dissipation
Product Range VCC Range (V)
[1]
Speed
(ns)
CY62148ESL Industrial 2.2V to 3.6V and 4.5V to 5.5V 55 2 2.5 15 20 1 7
Operating ICC, (mA)
f = 1 MHz f = f
[2]
Typ
Max Typ
max
[2]
Standby, I
Max Typ
(μA)
[2]
SB2
Max
Document #: 001-50045 Rev. ** Page 2 of 10
[+] Feedback
CY62148ESL MoBL
®
Maximum Ratings
Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = VCC + 0.75V for pulse durations less than 20 ns.
5. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to V
CC
(min) and 200 μs wait time after VCC stabilization.
6. Under DC conditions the device meets a V
IL
of 0.8V (for VCC range of 2.7V to 3.6V and 4.5V to 5.5V) and 0.6V (for VCC range of 2.2V to 2.7V). However, in dynamic
conditions Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. Refer to AN13470 for details.
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature.................................. –65°C to +150°C
Ambient Temperature with
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current....................................................> 200 mA
Operating Range
Power Applied ..............................................55°C to +125°C
Supply Voltage to Ground
Potential ........................... ................................–0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
[3, 4]
..........................................–0.5V to 6.0V
[3, 4]
.......................................–0.5V to 6.0V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
V
V
V
V
I
I
I
I
I
OH
OL
IH
IL
IX
OZ
CC
SB1
SB2
[6]
Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 V
2.7 < VCC < 3.6 IOH = –1.0 mA 2.4
4.5 < VCC < 5.5 IOH = –1.0 mA 2.4
Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 V
2.7 < VCC < 3.6 IOL = 2.1 mA 0.4
4.5 < VCC < 5.5 IOL = 2.1 mA 0.4
Input HIGH Voltage 2.2 < VCC < 2.7 1.8 V
2.7 < VCC < 3.6 2.2 V
4.5 < VCC < 5.5 2.2 V
Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.4 V
2.7 < VCC < 3.6 –0.3 0.6
4.5 < VCC < 5.5 –0.5 0.6
Input Leakage Current GND < VI < V
CC
Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 μA
VCC Operating Supply
Current
Automatic CE Power
Down Current — CMOS
Inputs
Automatic CE Power
Down Current — CMOS
f = f
= 1/t
max
RC
f = 1 MHz 2 2.5
CE
> V
− 0.2V, V
CC
f = f
V
CE
f = 0, V
(Address and Data Only), f = 0 (OE and WE),
max
= V
CC
CC(max)
> VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,
V
=
CC
IN
CC(max)
>
V
VCC = V
I
OUT
– 0.2V or V
CC
Inputs
Device Range
Ambient
T emperature
[5]
V
CC
CY62148ESL Industrial –40°C to +85°C 2.2V to 3.6V,
and
4.5V to 5.5V
55 ns
[2]
Max
+ 0.3 V
CC
+ 0.3
CC
+ 0.5
CC
UnitMin Typ
–1 +1 μA
CCmax
15 20 mA
= 0 mA, CMOS levels
< 0.2V,
IN
17μA
17μA
Document #: 001-50045 Rev. ** Page 3 of 10
[+] Feedback
Loading...