CYPRESS CY62146CV30 User Manual

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CY62146CV30 MoBL™

256K x 16 Static RAM

Features

• High speed:
—55 ns and 70 ns availability

• Voltage range:
—CY62146CV30: 2.7V – 3.3V

• Pin compatible with CY62146V

• Ultra-low active power
—Typical active current: 1.5 mA @ f = 1 MHz

—Ty pical active curre nt: 7 mA @ f = f

(70 ns speed)

max

• Low standby power

• Easy memory expansion with CE

and OE features

• Automatic power-down when deselec ted

• CMOS for optimum speed/power

Functional Description

The CY62146CV30 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™ (MoBL™) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly

Logic Block Diagram

reduces power consumption by 80% when addresses are not
toggling. The device can also be put into standby mode
reducing power consumption by 99% when deselected (CE
HIGH). The input/output pins (I/O0 – I/ O15) are placed in a
high-impeda nce state when : deselected (CE
are disabled (OE
Enable are disabled (BHE
operation (CE

HIGH), both Byte High Enable an d Byte Low

, BLE HIGH), or during a Write

LOW and WE LOW).

HIGH), outputs

Writing to the device is accomplished by taking Chip Enable

) and Write Enable (WE) inputs LOW. If Byte Low Enable

(CE

) is LOW, then data from I/O pins (I/O0 – I/O7), is written

(BLE
into the location specified on the address pins (A
Byte High Enable (BHE

– I/O15) is written into the location specified on the

(I/O

8

address pins (A

– A17).

0

) is LOW, then data from I/O pins

– A17). If

0

Reading from the device is accomplished by taking Chip
Enable (CE
Write Enable (WE

) and Output Enable (OE) LOW while forcing the

) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the Truth Table on page 9 for a complete description of Read

– I/O7. If Byte High Enable (BHE) is

0

to I/O15. See

8

and Write mode s.
The CY62146CV30 is available in 48-ball FBGA packaging.

DATA IN DRIVERS

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

ROW DECODER

256K × 16

RAM Array
2048 × 2048

COLUMN DECODER

11

12

A

A

15

13

A

16

14

A

A

A

– I/O

I/O

0

7

SENSE AMPS

17

A

I/O8 – I/O

BHE
WE
CE
OE
BLE

15

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05203 Rev. ** Revised December 17, 2001

CY62146CV30 MoBL™

Pin Configuration

[1,2]

Product Portfolio

1

BLE

I/O

I/O

V

SS

V

CC

I/O

I/O

NC

2

OE

BHE

8

I/O

10

9

I/O

11

I/O

12

I/O

13

14

NC

15

A

8

FBGA (Top View)

4

3

A

A

0

1

A

A

4

3

A

A

5

6

A

A

DNU

7

17

A

16

A

A

15

14

A

A

13

12

A

A

10

9

A

CE

I/O

I/O

I/O

I/O

WE

A

5

6

NC

2

I/O

I/O

1

V

3

V

4

I/O

5

I/O

NC

11

A

B

0

C

2

cc

D

ss

E

F

6

G

7

H

Power Dissipation (Industrial)

V

Range

Product

V

CC(min.)VCC(typ.)

CY62146CV302.7V3.0V3.3V

Maximum Ratings

(Above which the useful life may be im pa ired . Fo r us er gui de­lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground Potential...–0.5V to V
DC Voltage Applied to Outputs

in High-Z State

Notes:

1. NC pins are not connected to the die.

2. E3 (DNU) can be left as NC or V

3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

4. V

IL(min.)

[4]

....................................–0.5V to VCC + 0.5V

= –2.0V for pulse durations less than 20 ns.

CC

[3]

V

CC(max.)

ccmax

to ensure proper appl ication.

SS

Speed

Typ.

55 ns 1.5 mA 3 mA 12 mA 25 mA
70 ns 1.5 mA 3 mA 7 mA 15 mA

DC Input Voltage

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current........................................... ........ > 200 mA

Operating Range

+ 0.5V

CY62146CV30 Industrial –40°C to +85°C 2.7V to 3.3V

Operating, I

CC

f = 1 MHz f = f

[3]

Max. Typ.

[3]

[4]

....................................−0.5V to VCC + 0.5V

Device Range

max

Max. Typ.

7 µA15 µA

Ambient

Temperature V

= V

CC

CC(typ.)

, TA = 25°C.

Standby (I

[3]

SB2

Max.

)

CC

Document #: 38-05203 Rev. ** Page 2 of 12

Electrical Characteristics Over the Operating Range

CY62146CV30 MoBL™

Parame-

ter Description Test Conditions

V

OH

V

OL

V

IH

V

IL

I

IX

I

OZ

I

CC

I

SB1

I

SB2

Capacitance

Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V 2.4 2.4 V
Output LOW Voltage IOL = 2.1mA VCC = 2.7V 0.4 0.4 V
Input HIGH Voltage 2.2 VCC +

Input LOW Voltage –0.3 0.8 –0.3 0.8 V
Input Leakage Current GND < VI < V
Output Leakage Cur-

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

CC

rent
VCC Operating Supply

Current
Automatic CE Pow-

er-Down Current—
CMOS Inputs

Automatic CE Pow­er-Down Current—
CMOS Inputs

[5]

f = f

f = 1 MHz

CE > VCC – 0.2V
V
f = f
f=0 (OE

CE > VCC – 0.2V
V
f = 0, Vcc=3.3V

= 1/t

MAX

> VCC – 0.2V or VIN < 0.2V,

IN

max

> VCC – 0.2V or VIN < 0.2V,

IN

RC

(Address and Data Only),

,WE,BHE and BLE)

Parameter Description Test Conditions Max. Unit

C
C

IN
OUT

Input Capacitance TA = 25°C, f = 1 MHz,
Output Capacitance 8 pF

VCC = 3.3V

= 0 mA

I

OUT

CMOS Levels

VCC = V

CC(typ.)

-55 -70

[3]

Max. Min. Typ.

0.3V

1.8 VCC +

[3]

Max.

0.3V

UnitMin. Typ.

V

–1 +1 –1 +1 µA

12 25 7 15

1.5 3 1.5 3

mA

7 15 7 15 µA

6 pF

Thermal Resistance

Description Test Conditions Symbol BGA Units

Thermal Resistance
(Junction to Ambie nt)

Thermal Resistance
(Junction to Case)

Note:

5. Tested initially and after any design or process changes that may affect these parameters.

[5]

[5]

Document #: 38-05203 Rev. ** Page 3 of 12

Still Air, soldered on a 4.25 × 1.125 inch, four-layer
printed circuit board

Θ

JA

Θ

JC

55 °C/W

16 °C/W

AC Test Loads and Waveforms

CY62146CV30 MoBL™

30 pF

SCOPE

R1

VCC Typ

R2

Equivalent to: THÉ VENIN EQUIVALENT

GND

Rise TIme: 1 V/ns Fall Time: 1 V/ns

OUTPUT V

10%

ALL INPUT PULSES

90%

R

TH

TH

V

CC

OUTPUT

INCLUDING

JIG AND

Parameters 3.0V Unit

R1 1.105 KOhms
R2 1.550 KOhms

R

TH

V

TH

0.645 KOhms

1.75V Volts

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min. Typ.

V

DR

I

CCDR

[5]

t

CDR

[6]

t

R

Note:

6. Full device AC operation requires linear V

VCC for Data Retention 1.5 V

VCC= 1.5V

Data Retention Current

Chip Deselect to Data

CE > VCC – 0.2V ,

> VCC – 0.2V or

V

IN

< 0.2V

V

IN

0 ns

Retention Time
Operation Recovery Time t

ramp from V

CC

DR

to V

> 100µs or stable at V

CC(min.)

CC(min.)

RC

>100 µs.

90%

10%

[3]

Max. Unit

ccmax

3 10 µA

V

ns

Document #: 38-05203 Rev. ** Page 4 of 12