CYPRESS CY62138CV25, CY62138CV30, CY62138CV33, CY62138CV User Manual

查询CY62138CV25供应商

Features

• Very high speed: 55 ns and 70 ns

• V oltage range: —CY62138CV25: 2.2V–2.7V

—CY62138CV30: 2.7V–3.3V —CY62138CV33: 3.0V–3.6V —CY62138CV: 2.7V–3.6V

• Pin-compatible with CY62138V

• Ultra low active power —Typical active current: 1.5 mA @ f = 1 MHz —Typical active current: 5.5 mA @ f = f

speed)

• Low standby power

• Easy memory expansion with CE

features

, CE2, and OE

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Packages offered in a 36-ball FBGA

Functional Description

[1]

The CY62138CV25/30/33 and CY62138CV are high-performance CMOS stati c RAMs org anize d as 256K word s by eig ht

max

(70-ns

CY62138CV25/30/33 MoBL

CY62138CV MoBL

® ®

2M (256K x 8) Static RAM

bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for provi ding More Batter y

(MoBL®) in portable applications. The device also has

Life™ an automatic power-down feature that significantly reduces power consumption by 80% when addr esses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE

LOW).

or CE

Writing to the device is accomplished by taking Chip Enable 1

) and Write Enable (WE) inputs LOW and Chip Enable 2

(CE

(CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the loc ation spe cified on the address pin s (A through A17).

Reading from the device is accomplished by taking Chip Enable 1 (CE Write Enable (WE) and Chip Enable 2 (CE2) HIGH. Under

) and Output Enable (O E) LOW while forcing

these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O high-impedance state when the device is deselected (CE

through I/O7) are placed in a

HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE See the truth table at the b ack of this data shee t for a complete

LOW, CE2 HIGH and WE LOW).

description of read and write modes.

HIGH

Logic Block Diagram

I/O I/O I/O I/O I/O I/O I/O I/O

ROW DECODER

Data in Drivers

256K x 8

ARRAY

COLUMN

DECODER

SENSE AMPS

POWER

DOWN

Note:

1. For best practice recommendations, please refer to the Cypress applic a tion note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Document #: 38-05200 Rev. *D Revised September 20, 2002

CY62138CV25/30/33 MoBL

CY62138CV MoBL

® ®

Configuration

[2, 3]

I/O

FBGA (Top View)

WE A

DNU

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied ..............................................55°C to +125°C

Supply Voltage to Ground Potential ... –0.5V V DC Voltage Applied to Outputs

in High-Z State DC Input Voltage

[4]

.....................................0.5V to VCC + 0.3V

[4]

.................................–0.5V to VCC + 0.3V

Output Current into Outputs (LOW) ............................ 20 mA

CCMAX

+ 0.5V

I/O

Stat ic Disc ha rge Voltage................................. ...... ....> 2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current ...................................................> 200 mA

Operating Range

Product Range

CY62138CV25 Industrial –40°C to +85°C 2.2V to 2.7V CY62138CV30 2.7V to 3.3V CY62138CV33 3.0V to 3.6V CY62138CV 2.7V to 3.6V

Ambient

Te mpe r ature T

Product Portfolio

Power Dissipation

Operating, ICC (mA) Standby, I

Product

VCC Range (V)

[5]

Speed

Max. Typ.

(ns)

f = 1 MHz f = f

[5]

Max. Typ.

[5]

max

Max.

Typ.

[5]

CY62138CV25LL 2.2 2.5 2.7 55 1.5 3 7 15 2 10

70 1.5 3 5.5 12

CY62138CV30LL 2.7 3.0 3.3 55 1.5 3 7 15 2 10

70 1.5 3 5.5 12

CY62138CV33LL 3.0 3.3 3.6 55 1.5 3 7 15 5 15

70 1.5 3 5.5 12

CY62138CVLL 2.7 3.3 3.6 70 1.5 3 5.5 12 5 15

Notes:

2. NC pins are not connected to the die.

3. C3 (DNU) can be left as NC or V

4. V

5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

= –2.0V for pulse durations less than 20 ns.

IL(min.)

to ensure proper application.

= V

CC(typ.)

, TA = 25°C.

Document #: 38-05200 Rev. *D Page 2 of 12

SB2

Max.Min. Typ.

(µA)

Electrical Characteristics Ov er the Op erat ing Range

Parameter Description Test Conditions

SB1

SB2

Parameter Description Test Conditions

SB1

SB2

Output HIGH Voltage IOH = –0.1 mA VCC = 2.2V 2.0 2.0 V Output LOW Voltage IOL = 0.1 mA VCC = 2.2V 0.4 0.4 V Input HIGH Voltage 1.8 V

Input LOW Voltage –0.3 0.6 –0.3 0.6 V Input Leakage Current GND < VI < V Output Leakage

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

Current VCC Operating Supply

Current

Automatic CE Power-down Current — CMOS Inputs

f = f f = 1 MHz 1.5 3 1.5 3

MAX

= 1/t

VCC = 2.7V I

OUT

CMOS Levels

CE1 > VCC – 0.2V or CE2 < 0.2V V

> VCC – 0.2V or VIN < 0.2V, f =

(Address and Data Only), f = 0

max

(OE

, WE)

CE1 > VCC – 0.2V or CE2 < 0.2V

> VCC − 0.2V or VIN < 0.2V , f = 0, V

= 2.7V

Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V 2.4 2.4 V Output LOW Voltage IOL = 2.1 mA VCC = 2.7V 0.4 0.4 V Input HIGH Voltage 2.2 V

Input LOW Voltage –0.3 0.8 –0.3 0.8 V Input Leakage Current GND < VI < V Output Leakage

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

Current VCC Operating Supply

Current

Automatic CE Power-down Current — CMOS Inputs

f = f f = 1 MHz 1.5 3 1.5 3

MAX

= 1/t

VCC = 3.3V I

OUT

CMOS Levels

CE1 > VCC – 0.2V or CE2 < 0.2V V

> VCC – 0.2V or VIN < 0.2V, f =

(Address and Data Only), f = 0

max

(OE

, WE)

CE1 > VCC – 0.2V or CE2 < 0.2V, VIN

VCC − 0.2V or VIN < 0.2V , f = 0,

> VCC=3.3V

= 0 mA

CY62138CV25/30/33 MoBL

CY62138CV MoBL

CY62138CV25-55 CY62138CV25-70

[5]

Max. Min. Typ.

1.8 V

0.3V

–1 +1 –1 +1 µA

7 15 5.5 12 mA

2 10 2 10 µA

CY62138CV30-55 CY62138CV30-70

[5]

Max. Min. Typ.

2.2 V

0.3V

–1 +1 –1 +1 µA

7 15 5.5 12 mA

2 10 2 10 µA

[5]

Max.

0.3V

Max.

0.3V

® ®

UnitMin. Typ.

Document #: 38-05200 Rev. *D Page 3 of 12

CY62138CV25/30/33 MoBL

CY62138CV MoBL

Electrical Characteristics Ov er the Op erat ing Range

CY62138CV33-55

Parameter Description Test Conditions

Output HIGH Voltage IOH = –1.0 mA VCC = 3.0V 2.4 2.4 V

[5]

Max. Min. Typ.

VCC = 2.7V 2.4 V

Output LOW Voltage IOL = 2.1 mA VCC = 3.0V 0.4 0.4 V

VCC = 2.7V 0.4 V

SB1

SB2

Capacitance

Input HIGH Voltage 2.2 V

0.3V Input LOW Voltage –0.3 0.8 –0.3 0.8 V Input Leakage Current GND < VI < V Output Leakage

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

–1 +1 –1 +1 µA

Current VCC Operating Supply

Current

Automatic CE Power-down Current— CMOS Inputs

[6]

f = f f = 1 MHz 1.5 3 1.5 3

CE1 > VCC – 0.2V or CE2 < 0.2V V f = f f = 0 (OE

= 1/t

MAX

> VCC – 0.2V or VIN < 0.2V,

max

(Address and Data Only),

VCC = 3.6V

= 0 mA

OUT

CMOS Levels

,WE)

7 15 5.5 12 mA

5 15 5 15 µA

CE1 > VCC – 0.2V or CE2 < 0.2V VIN > VCC − 0.2V or VIN < 0.2V,

= 3.6V

f = 0, V

Parameter Description T est Conditions Max. Unit

OUT

Thermal Resistance

Input Capacitance TA = 25°C, f = 1 MHz, VCC = V

CC(typ.)

Output Capaci tance 8 pF

Parameter Description T est Condit ions BGA Unit

Thermal Resistance (Junction to Ambient)

Thermal Resistance (Junction to Case)

[6]

Still A ir, soldered on a 3 x 4.5 inch, two-l aye r pri nte d circuit board

[6]

CY62138CV33-70

CY62138CV-70

2.2 V

6 pF

[5]

Max.

0.3V

55 °C/W

16 °C/W

® ®

UnitMin. Typ.

AC Test Loads and Waveforms

30 pF

SCOPE

VCC Typ

Equivalent to: THÉ VENIN EQUIVALENT

OUTPUT V

GND

Rise Time: 1 V/ns

10%

ALL INPUT PULSES

90%

10%

Fall time: 1 V/ns

OUTPUT

INCLUDING

JIG AND

Note:

6. Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05200 Rev. *D Page 4 of 12

+ 8 hidden pages

CYPRESS CY62138CV25, CY62138CV30, CY62138CV33, CY62138CV User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual