CYPRESS CY62137CV25, CY62137CV30, CY62137CV33 User Manual

查询CY62137CV供应商

Features

• Very high speed: 55 ns and 70 ns

• V oltage range:
—CY62137CV25: 2.2V–2.7V

—CY62137CV30: 2.7V–3.3V
—CY62137CV33: 3.0V–3.6V
—CY62137CV: 2.7V–3.6V

• Pin-compatible with the CY62137V

• Ultra-low active power
—Typical active current: 1.5 mA @ f = 1 MHz
—Typical active current: 5.5 mA @ f = f

speed)

• Low and ultra-low standby power

• Easy memory expansion with CE

and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Packages offered in a 48-ball FBGA

Functional Description

[1]

The CY62137CV25/30/33 and CY62137CV are high-perfor­mance CMOS static RAMs organized as 128K words by 16
bits. These devic es feature advanced circuit de sign to pro vide
ultra-low active current. This is ideal for providing More Battery

max

(70-ns

CY62137CV25/30/33 MoBL

CY62137CV MoBL

2M (128K x 16) Static RAM

Life™ (MoBL®) in portable applications such as cellular tele­phones. The devices also has an automatic power-down fea­ture that significantly reduces power consumption by 80%
when addresses are not toggling. The device can also be put
into standby m ode reduci ng power con sumption by more tha n
99% when deselected (CE
HIGH). The input/output pins (I/O
in a high-impedance state when: deselected (CE
puts are dis abled (OE HIGH), both Byte High Enable and Byte
Low Enable a r e d is a bled ( B HE
operation (CE

LOW, and WE LOW).

Writing to the device is accomplished by taking Chip Enable

) and Write Enable (WE) inputs LOW. If Byte Low Enable

(CE
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A

Reading from the device is accomplished by taking Chip
Enable (CE
Write Enable (WE

) and Output Enable (OE) LOW while forcing the

) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW , then d ata f rom memory will a ppear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.

HIGH or both BLE and BHE are

through I/O15) are plac ed

0

HIGH), out-

, BLE HIGH), or during a write

through A16).

0

to I/O7. If Byte High Enable (BHE) is

0

to I/O15. See

8

®
®

0

Logic Block Diagram

10

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

Note:

1. For best practice recommendations, please refer to the Cypress applic a tion note “System Design Guidelines” on http://www.cypress.com.

DATA IN DRIVERS

ROW DECODER

COLUMN DECODER

11

A

Power- down
Circuit

128K x 16

RAM Array
2048 x 1024

14

A12A13A

– I/O

I/O

0

7

SENSE AMPS

15

16

A

A

CE

BHE
BLE

I/O8 – I/O

BHE
WE
CE
OE
BLE

15

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05201 Rev. *D Revised September 20, 2002

CY62137CV25/30/33 MoBL

CY62137CV MoBL

®
®

Pin Configuration

[2, 3]

FBGA (Top View)

4

5

6

A

A

1

A

4

A

6

A

7

A

16

A

15

A

13

A

10

CE

I/O

I/O

I/O

I/O

WE

A

NC

2

I/O

I/O

1

V

CC

3

V

SS

4

I/O

5

I/O

NC

11

A

B

0

C

2

D

E

F

6

G

7

H

A

A

A

NC

A

A

A

3

0

3

5

14

12

9

Static Discharge Voltage.......................................... > 2001V

Maximum Ratings

1

BLE

I/O

I/O

V

SS

V

CC

I/O

I/O

NC

2

OE

BHE

8

I/O

10

9

I/O

11

DNU

I/O

12

I/O

13

14

NC

15

A

8

(per MIL-STD-883, Method 3015)

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground Potential –0.5V to V
DC Voltage Applied to Outputs

in High-Z State
DC Input Voltage

[4]

....................................–0.5V to VCC + 0.3V

[4]

....................................−0.5V to VCC + 0.3V

CCMAX

+ 0.5V

Latch-up Current................................................... > 200 mA

Operating Range

Device Range

CY62137CV25 Industrial –40°C to +85°C 2.2V to 2.7V
CY62137CV30 2.7V to 3.3V
CY62137CV33 3.0V to 3.6V
CY62137CV 2.7V to 3.6V

Ambient

Temperature T

A

Output Current into Outputs (LOW).............................20 mA

Product Portfolio

Power Dissipation

Operating, ICC (mA)

V

Range (V)

Product

CC

V

CC(min.)VCC(typ.)

[5]

V

CC(max.)

Speed

(ns)

Typ.

[5]

Max. Typ.

max

[5]

Max. Typ.

CY62137CV25LL 2.2 2.5 2.7 55 1.5 3 7 15 2 10

70 1.5 3 5.5 12

CY62137CV30LL 2.7 3.0 3.3 55 1.5 3 7 15 2 10

70 1.5 3 5.5 12

CY62137CV33LL 3.0 3.3 3.6 55 1.5 3 7 15 5 15

70 1.5 3 5.5 12
CY62137CVLL 2.7V 3.3 3.6 70 1.5 3 5.5 12 5 15
CY62137CVSL 2.7V 3.3 3.6 70 1.5 3 5.5 12 1 5

Standby, I

[5]

SB2

Max.

V

CC

(µA)f = 1 MHz f = f

Notes:

2. NC pins are not connected to the die.

3. E3 (DNU) can be left as NC or V

4. V

5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

= –2.0V for pulse durations less than 20 ns.

IL(min.)

to ensure proper application.

SS

= V

CC

CC(typ.)

, TA = 25°C.

Document #: 38-05201 Rev. *D Page 2 of 13

Electrical Characteristics Ov er the Op erat ing Range

Parameter Description Test Conditions

V
V
V

V
I

IX

I

OZ

I

CC

I

SB1

I

SB2

OH
OL
IH

IL

Output HIGH Voltage IOH = –0.1 mA VCC = 2.2V 2.0 2.0 V
Output LOW Voltage IOL = 0.1 mA VCC = 2.2V 0.4 0.4 V
Input HIGH Voltage 1.8 VCC +

Input LOW Voltage –0.3 0.6 –0.3 0.6 V
Input Leakage Current GND < VI < V
Output Leakage

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

CC

Current
VCC Operating Supply

Current

Automatic CE
Power-down Current—
CMOS Inputs

Automatic CE
Power-down Current—
CMOS Inputs

f = f
f = 1 MHz 1.5 3 1.5 3

MAX

= 1/t

RC

VCC = 2.7V
I

OUT

CMOS Levels

CE > VCC – 0.2V
V

> VCC – 0.2V or VIN < 0.2V,

IN

f = f

(Address and Data Only),

max

f=0 (OE

, WE, BHE, and BLE)

CE > VCC – 0.2V

> VCC – 0.2V or VIN < 0.2V,

V

IN

f = 0, VCC = 2.7V

= 0 mA

CY62137CV25/30/33 MoBL

CY62137CV MoBL

CY62137CV25-55 CY62137CV25-70

[5]

Max. Min. Typ.

1.8 VCC +

0.3V

–1 +1 –1 +1 µA

7 15 5.5 12 mA

2 10 2 10 µA

[5]

Max.

UnitMin. Typ.

V

0.3V

®
®

Parameter Description Test Conditions

V
V
V

V
I

IX

I

OZ

I

CC

I

SB1

I

SB2

OH
OL
IH

IL

Output HIGH Voltage IOH = –1.0 mA VCC = 2.7V 2.4 2.4 V
Output LOW Voltage IOL = 2.1 mA VCC = 2.7V 0.4 0.4 V
Input HIGH Voltage 2.2 VCC +

Input LOW Voltage –0.3 0.8 –0.3 0.8 V
Input Leakage Current GND < VI < V
Output Leakage

GND < VO < VCC, Output Disabled –1 +1 –1 +1 µA

CC

Current
VCC Operating Supply

Current

Automatic CE
Power-down Current—
CMOS Inputs

Automatic CE
Power-down Current—
CMOS Inputs

f = f
f = 1 MHz 1.5 3 1.5 3

MAX

= 1/t

RC

VCC = 3.3V

= 0 mA

I

OUT

CMOS Levels

CE > VCC – 0.2V
V

> VCC – 0.2V or VIN < 0.2V,

IN

f = f

(Address and Data Only),

max

f=0 (OE

, WE, BHE, and BLE)

CE > VCC – 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,

CC

= 3.3V

f = 0, V

Electrical Characteristics Ov er the Op erat ing Range

Parameter Description Test Conditions

V

OH

V

OL

Output HIGH Voltage IOH = –1.0 mA VCC = 3.0V 2.4 2.4 V

VCC = 2.7V 2.4 V

Output LOW Voltage IOL = 2.1 mA VCC = 3.0V 0.4 0.4 V

VCC = 2.7V 0.4 V

CY62137CV30-55 CY62137CV30-70

[5]

Max. Min. Typ.

2.2 VCC +

0.3V

[5]

Max.

UnitMin. Typ.

V

0.3V

–1 +1 –1 +1 µA

7 15 5.5 12 mA

2 10 2 10 µA

CY62137CV33-70

CY62137CV33-55

[5]

Max. Min. Typ.

CY62137CV-70

[5]

Max.

UnitMin. Typ.

Document #: 38-05201 Rev. *D Page 3 of 13

Electrical Characteristics Ov er the Op erat ing Range (continued)

Parameter Description Test Conditions

V

IH

V

IL

I

IX

I

OZ

I

CC

I

SB1

I

SB2

Capacitance

C

IN

C

OUT

Input HIGH Voltage 2.2 VCC +

Input LOW Voltage –0.3 0.8 –0.3 0.8 V
Input Leakage Current GND < VI < V

CC

Output Leakage Current GND < VO < VCC, Output Dis-

abled

VCC Operating Supply Current f = f

f = 1 MHz 1.5 3 1.5 3

MAX

= 1/t

RCVCC

I

OUT

CMOS

= 3.6V

= 0 mA

Levels

Automatic CE
Power-down Current —CMOS
Inputs

Automatic CE
Power-down Current —CMOS
Inputs

[6]

CE > VCC – 0.2V
V

> VCC – 0.2V or VIN < 0.2V,

IN

f = f

(Address and Data Onl y),

max

f=0 (OE

, WE, BHE, and BLE)

CE > VCC – 0.2V
VIN > VCC – 0.2V or VIN <

0.2V,

CC

= 3.6V

f = 0, V

Parameter Description Test Conditions Max. Unit

Input Capacitance TA = 25°C, f = 1 MHz,

= V

V

CC

Output Capacitance 8 pF

CC(typ.)

CY62137CV25/30/33 MoBL

CY62137CV MoBL

CY62137CV33-55

[5]

Max. Min. Typ.

0.3V

–1 +1 –1 +1 µA
–1 +1 –1 +1 µA

7 15 5.5 12 mA

5 15 5 15 µA

LL 5 15 5 15
SL 1 5

CY62137CV33-70

CY62137CV-70

[5]

Max.

2.2 VCC +

0.3V

6 pF

®
®

UnitMin. Typ.

V

Thermal Resistance

Parameter Description T est Condit ions BGA Unit

Θ

Θ

Thermal Resistance

JA

(Junction to Ambient)
Thermal Resistance

JC

(Junction to Case)

[6]

[6]

Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board

55 °C/W

16 °C/W

AC Test Loads and Waveforms

30 pF

SCOPE

R1

VCC Typ

R2

Equivalent to: THÉ VENIN EQUIVALENT

GND

Rise TIme: 1 V/ns Fall Time: 1 V/ns

OUTPUT V

10%

ALL INPUT PULSES

90%

R

TH

TH

90%

10%

8000 645 645 Ω

1.20 1.75 1.75 V

V

CC

OUTPUT

INCLUDING

JIG AND

Parameters 2.5V 3.0V 3.3V Unit

R1 16600 1105 1216 Ω
R2 15400 1550 1374 Ω

R

TH

V

Note:

6. Tested initially and after any design or process changes that may affect these parameters.

TH

Document #: 38-05201 Rev. *D Page 4 of 13