Cypress CY62136VN User Manual

CY62136VN MoBL

®

2-Mbit (128K x 16) Static RAM

Features

• Temperature Ranges
— Industrial: –40°C to 85°C

— Automotive-A: –40°C to 85°C
— Automot ive-E: –40°C to 125°C

• High speed: 55 ns

• Wide voltage range: 2.7V–3.6V

• Ultra-low active, standby power

• Easy memory expansion with CE

and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Available in standard Pb-free 44-pin TSOP Type II,
Pb-free and non Pb-free 48-ball FBGA packages

Functional Description

[1]

The CY62136VN is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL

®

) in

Logic Block Diagram

A

10

A

9

A

8

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

DATA IN DRIVERS

ROW DECODER

COLUMN DECODER

11

A

128K x 16

RAM Array

12

13

14

A

A

A

SENSE AMPS

15

16

A

A

portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
deselected (CE
I/O

) are placed in a high-impedance state when: deselected

15

HIGH), outputs are disabled (OE HIGH), BHE and BLE

(CE

HIGH). The input/output pins (I/O0 through

are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).

Writing to the device is accomplished by taking Chip Enable
(CE

) and Write Enable (WE) inputs LOW. If Byte Low Enable

) is LOW, then data from I/O pins (I/O0 through I/O7), is

(BLE
written into the location specified on the address pins (A
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
specified on the address pins (A

through I/O15) is written into the location

8

through A16).

0

Reading from the device is accomplished by taking Chip
Enable (CE
Write Enable (WE

) and Output Enable (OE) LOW while forcing the

) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
the Truth Table at the back of this data sheet for a complete

to I/O15. See

8

description of read and write modes.

A

5

A

6

A

7

OE
BHE
BLE
I/O
I/O
I/O
I/O

V

SS

V

CC

I/O
I/O
I/O
I/O
NC
A

8

A

9

A

10

A

11

NC

[3]

15
14
13
12

11
10
9
8

I/O

– I/O

0

I/O8 – I/O

BHE
WE
CE
OE
BLE

Pin Configurations

TSOP II (Forward)

Top View

1

A

4

A

2

3

3

A

2

4

A

1

5

A

0

6

CE

7

15

I/O
I/O

I/O
I/O

V

V
I/O
I/O
I/O
I/O

WE
A
A

A
A

7

0

8

1

9

2

10

3

11

CC

12

SS

13

4

14

5

15

6

16

7

17
18

16

19

15

20

14

21

13

22

A

12

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29

28
27
26
25
24

23

0

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06510 Rev. *A Revised August 3, 2006

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CY62136VN MoBL

Product Portfolio

Power Dissipation

VCC Range (V)

Product

Min Typ.

[2]

Max Typ.

Speed Ranges

CY62136VNLL 2.7 3.0 3.6 55 Industrial 7 20 1 15

Pin Configurations

55
70
70
70

[3]

Automotive-A 7 20 1 15

Industrial 7 15 1 15
Automotive-A 7 15 1 15
Automotive-E 7 20 1 20

FBGA

Top View

1

2

4

3

5

Operating, ICC (mA) Standby, I

[2]

Maximum Typ.

6

[2]

SB2

Maximum

®

(µA)

BLE

I/O

BHE

8

I/O

I/O

9

V

I/O

SS

V

I/O

CC

I/O

I/O

14

I/O

NC

15

NC

Notes:

2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

3. NC pins are not connected on the die.

0

A

3

A

5

10

NC

11

NC

12

A

14

13

A

12

A

A

9

8

A

OE

A

A

1

A

4

A

6

A

7

A

16

A

15

A

13

A

10

CE

I/O

I/O

I/O

I/O

WE

A

NC

2

I/O

I/O

1

V

CC

3

V

4

I/O

5

I/O

NC

11

SS

A

B

0

C

2

D

E

F

6

G

7

H

= VCC Typ, TA = 25°C.

CC

Document #: 001-06510 Rev. *A Page 2 of 12

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CY62136VN MoBL

®

Maximum Ratings

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature..................................–65°C to +150°C

Ambient Temperature with

Output Current into Outputs (LOW)............................ 20 mA

Static Discharge Voltage...........................................> 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current.....................................................> 200 mA

Operating Range

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground Potential...............–0.5V to +4.6V

DC Voltage Applied to Outputs
in High-Z State

DC Input Voltage

[4]

....................................–0.5V to VCC + 0.5V

[4]

.................................–0.5V to VCC + 0.5V

Industrial −40°C to +85°C 2.7V to
Automotive-A –40°C to +85°C
Automotive-E –40°C to +125°C

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

V

OH

V

OL

V

IH

V

IL

I

IX

I

OZ

I

CC

I

SB1

I

SB2

Capacitance

C

IN

C

OUT

Notes:

4. V

IL

5. T

A

6. Tested initially and after any design or process ch anges that may affect these parameters.

Output HIGH Voltage VCC = 2.7V, IOH = −1.0 mA 2.4 2.4 V
Output LOW Voltage VCC = 2.7V, IOL = 2.1 mA 0.4 0.4 V
Input HIGH Volt age VCC = 3.6V 2.2 VCC +

Input LOW Voltage VCC = 2.7V –0.5 0.8 –0.5 0.8 V
Input Leakage

Current

GND < VI < V

CC

Ind’l –1 +1 –1 +1 µA
Auto-A –1 +1 –1 +1 µA
Auto-E –10 +10 µA

Output Leakage
Current

GND < VO < VCC,
Output Disabled

Ind’l –1 +1 –1 +1 µA
Auto-A –1 +1 –1 +1 µA
Auto-E –10 +10 µA

VCC Operating
Supply
Current

f = f
= 1/t

MAX

RC

VCC = 3.6V,
I

OUT

CMOS
Levels

= 0 mA,

Ind’l 7 20 7 15 mA
Auto-A 7 20 7 15
Auto-E 7 20

f = 1 MHz Ind’l 1 2 1 2 mA

Auto-A 1 2 1 2
Auto-E 1 2

Automatic CE
Power-down
Current—
CMOS Inputs

Automatic CE
Power-down
Current—
CMOS Inputs

[6]

CE > V

CC

> V

V

IN

CC

V

< 0.3V, f = f

IN

CE > V

CC

> V

V

IN

CC

V

< 0.3V, f = 0

IN

− 0.3V,

− 0.3V or

MAX

− 0.3V

− 0.3V or

Ind’l 100 100 µA
Auto-A 100 100 µA
Auto-E 100 µA
Ind’l 1 15 1 15 µA
Auto-A 1 15 1 15
Auto-E 1 20

Parameter Description Test Conditions Max. Unit

Input Capacitance TA = 25°C, f = 1 MHz,

V

Output Capacitance 8 pF

(min) = –2.0V for pulse durations less than 20 ns.

is the “Instant-On” case temperature.

CC

Range Ambient T emperature [TA]

-55 -70

[2]

Max. Min. Typ.

[2]

2.2 VCC +

0.5V

6pF

= V

CC(typ)

[5]

Max.

0.5V

V

CC

3.6V

UnitMin. Typ.

V

Document #: 001-06510 Rev. *A Page 3 of 12

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CY62136VN MoBL

®

Thermal Resistance

[6]

Parameter Description T e st Con ditions TSOPII FBGA Unit

Θ

JA

Θ

JC

Thermal Resistance
(Junction to Ambient)

Thermal Resistance
(Junction to Case)

Still Air , soldered on a 4.25 x 1.125 inch,
4-layer printed circuit board

60 55 °C/W

22 16 °C/W

AC Test Loads and Waveforms

V

CC

OUTPUT

INCLUDING

R1

V

CC

OUTPUT

30 pF

JIG AND

SCOPE

R2

INCLUDING

JIG AND

(a)

Parameters Value Unit

R1 1105 Ohms
R2 1550 Ohms

R

TH

V

TH

5 pF

SCOPE

R1

(b)

R2

VCC Typ

GND

Equivalent to: THÉ VENIN EQUIVALENT

10%

Rise Time:
1 V/ns

OUTPUT V

ALL INPUT PULSES

90%

645 Ohms

1.75 Volts

90%

Fall Time:
1 V/ns

(c)

RTH

10%

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions

V

DR

I

CCDR

VCC for Data Retention 1.0 V
Data Retention Current VCC = 1.0V, CE > VCC − 0.3V,

VIN > VCC − 0.3V or VIN < 0.3V ,

t

CDR

t

R

[6]

[7]

Chip Deselect to Data
Retention Time

Operation Recovery Time 70 ns

Data Retention Waveform

DATA RETENTION MODE

V

V

CC

CE

Note:

7. Full device operation requires linear V

8. No input may exceed V

CC

+ 0.3V

ramp from V

CC

CC(min.)

t

CDR

DR

to V

100 ms or stable at V

CC(min) >

VDR> 1.0 V

[9]

CC(min) >

100 ms.

Min. Typ.

[2]

Max. Unit

0.5 7.5 µA

0ns

V

CC(min.)

t

R

Document #: 001-06510 Rev. *A Page 4 of 12

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