Cypress CY14B102L User Manual
PRELIMINARY
CY14B102L, CY14B102N
2 Mbit (256K x 8/128K x 16) nvSRAM
Features
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Logic Block Diagram
[1, 2, 3]
Note
1. Address A
0
- A17 for x8 configuration and Address A0 - A16 for x16 configuration.
2. Data DQ
0
- DQ7 for x8 configuration and Data DQ0 - DQ15 for x16 configuration.
3. BHE
and BLE are applicable for x16 configuration only.
Functional Description
■ 20 ns, 25 ns, and 45 ns Access Times
■ Internally organized as 256K x 8 (CY14B102L) or 128K x 16
(CY14B102N)
■ Hands off Automatic STORE on power down with only a small
Capacitor
■ STORE to QuantumTrap
software, device pin, or AutoStore
■ RECALL to SRAM initiated by software or power up
■ Infinite Read, Write, and Recall Cycles
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3V +20% to -10% operation
■ Commercial, Industrial and Automotive Temperatures
■ 48-ball FBGA and 44/54-pin TSOP - II packages
■ Pb-free and RoHS compliance
®
nonvolatile elements initiated by
®
on power down
The Cypress CY14B102L/CY14B102N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 256K bytes of 8 bits each or 128K words of 16 bits
each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-45754 Rev. *B Revised November 10, 2008
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
Pinouts
48-FBGA
(not to scale)
Top View
(x8)
48-FBGA
(not to scale)
Top View
(x16)
WE
V
CC
A
11
A
10
V
CAP
A
6
A
0
A
3
CE
NC
NC
DQ0
A
4
A
5
NC
DQ2
DQ3
NC
V
SS
A
9
A
8
OE
V
SS
A
7
NC
NC
NC
A
17
A
2
A
1
NC
V
CC
DQ4
NC
DQ5
DQ6
NC
DQ7
NC
A
15
A
14
A
13
A
12
HSB
3
2
6
5
4
1
D
E
B
A
C
F
G
H
A
16
NC
DQ1
NC
[6]
[4]
[5]
WE
V
CC
A
11
A
10
V
CAP
A
6
A
0
A
3
CE
DQ10
DQ8
DQ9
A
4
A
5
DQ13
DQ12
DQ14
DQ15
V
SS
A
9
A
8
OE
V
SS
A
7
DQ0
BHE
NC
NC
A
2
A
1
BLE
V
CC
DQ2
DQ1
DQ3
DQ4
DQ5
DQ6
DQ7
A
15
A
14
A
13
A
12
HSB
3
2
6
5
4
1
D
E
B
A
C
F
G
H
A
16
NC
NC
DQ11
[6]
[5]
[4]
Notes
4. Address expansion for 4 Mbit. NC pin not connected to die.
5. Address expansion for 8 Mbit. NC pin not connected to die.
6. Address expansion for 16 Mbit. NC pin not connected to die.
7. HSB
pin is not available in 44-TSOP II (x16) package.
44-TSOP II
(x16)
44-TSOP II
(x8)
[7]
NC
A
8
NC
NC
V
SS
DQ6
DQ5
DQ4
V
CC
A
13
DQ3
A
12
DQ2
DQ1
DQ0
OE
A
9
CE
NC
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
11
A
7
A
14
A
15
A
16
A
17
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
A
10
NC
WE
DQ7
HSB
NC
V
SS
V
CC
V
CAP
NC
(x8)
[6]
[4]
[5]
V
SS
DQ6
DQ5
DQ4
V
CC
A
13
DQ3
A
12
DQ2
DQ1
DQ0
BLE
A
9
CE
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
11
A
10
A
14
BHE
OE
A
15
A
16
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
WE
DQ7
A
0
V
SS
V
CC
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
V
CAP
(x16)
[4]
(Not to Scale)
(Not to Scale)
Figure 1. Pin Diagram - 48 FBGA
Figure 2. Pin Diagram - 44 Pin TSOP II
Document #: 001-45754 Rev. *B Page 2 of 24
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
Pinouts (continued)
NC
DQ7
DQ6
DQ5
DQ4
V
CC
DQ3
DQ2
DQ1
DQ0
NC
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
V
CAP
WE
A
8
A
10
A
11
A
12
A
13
A
14
A
15
A
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
OE
CE
V
CC
NC
V
SS
NC
A
9
NC
NC
NC
NC
NC
NC
54
53
52
51
49
50
HSB
BHE
BLE
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
(x16)
[6]
[4]
[5]
(Not to Scale)
Figure 3. Pin Diagram - 54 Pin TSOP II (x16)
Pin Definitions
Pin Name IO Type Description
A0 – A
17
A0 – A
16
DQ
– DQ7Input/Output Bidirectional Data IO Lines for x8 Configuration. Used as input or output lines depending on
0
DQ
– DQ
0
15
WE
CE
OE
BHE
BLE
V
SS
V
CC
[7]
HSB
V
CAP
NC No Connect No Connect. This pin is not connected to the die.
Document #: 001-45754 Rev. *B Page 3 of 24
Input Address Inputs Used to Select one of the 262,144 bytes of the nvSRAM for x8 Configuration.
Address Inputs Used to Select one of the 131,072 words of the nvSRAM for x16 Configuration.
operation.
Bidirectional Data IO Lines for x16 Configuration. Used as input or output lines depending on
operation.
Input Write Enable Input, Active LOW. When selected LOW, data on the IO pins is written to the specific
address location.
Input Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
Input Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read
cycles. IO pins are tri-stated on deasserting OE
Input Byte High Enable, Active LOW. Controls DQ15 - DQ8.
Input Byte Low Enable, Active LOW. Controls DQ7 - DQ0.
Ground Ground for the Device. Must be connected to the ground of the system.
Power Supply Power Supply Inputs to the Device.
Input/Output Hardware Store Busy (HSB). When LOW this output indicates that a hardware store is in progress.
When pulled LOW external to the chip it initiates a nonvolatile STORE operation. A weak internal pull
up resistor keeps this pin HIGH if not connected (connection optional). After each store operation HSB
will be driven HIGH for short time with standard output high current.
Power Supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to
nonvolatile elements.
HIGH.
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
Device Operation
0.1uF
Vcc
10kOhm
V
CAP
Vcc
WE
V
CAP
V
SS
The CY14B102L/CY14B102N nvSRAM is made up of two
functional components paired in the same physical cell. They are
an SRAM memory cell and a nonvolatile QuantumTrap cell. The
SRAM memory cell operates as a standard fast static RAM. Data
in the SRAM is transferred to the nonvolatile cell (the STORE
operation), or from the nonvolatile cell to the SRAM (the RECALL
operation). Using this unique architecture, all cells are stored and
recalled in parallel. During the STORE and RECALL operations,
SRAM read and write operations are inhibited. The
CY14B102L/CY14B102N supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 200K STORE
operations. See the “Truth Table For SRAM Operations” on
page 15 for a complete description of read and write modes.
SRAM Read
The CY14B102L/CY14B102N performs a read cycle when CE
and OE are LOW and WE and HSB are HIGH. The address
specified on pins A
data bytes or 131,072 words of 16 bits each are accessed. Byte
enables (BHE, BLE) determine which bytes are enabled to the
output, in the case of 16-bit words. When the read is initiated by
an address transition, the outputs are valid after a delay of t
(read cycle 1). If the read is initiated by CE or OE, the outputs
are valid at t
data output repeatedly responds to address changes within the
ACE
tAA access time without the need for transitions on any control
input pins. This remains valid until another address change or
until CE or OE is brought HIGH, or WE or HSB is brought LOW.
0-17
or at t
or A
DOE
determines which of the 262,144
0-16
, whichever is later (read cycle 2). The
AA
Figure 4 shows the proper connection of the storage capacitor
(V
) for automatic store operation. Refer to DC Electrical
CAP
Characteristics on page 7 for the size of V
the V
up should be placed on WE
This pull up is only effective if the WE
pin is driven to V
CAP
by a regulator on the chip. A pull
CC
to hold it inactive during power up.
signal is tri-state during
. The voltage on
CAP
power up. Many MPUs tri-state their controls on power up. This
should be verified when using the pull up. When the nvSRAM
comes out of power-on-recall, the MPU must be active or the WE
held inactive until the MPU comes out of reset.
To reduce unnecessary nonvolatile stores, AutoStore and
hardware store operations are ignored unless at least one write
operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB
signal is monitored by the system to detect if an AutoStore
cycle is in progress.
Figure 4. AutoStore Mode
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE
or WE goes HIGH at
the end of the cycle. The data on the common IO pins DQ
are written into the memory if the data is valid tSD before the end
of a WE
write. The Byte Enable inputs (BHE
controlled write or before the end of an CE controlled
, BLE) determine which bytes
are written, in the case of 16-bit words. It is recommended that
OE
be kept HIGH during the entire write cycle to avoid data bus
contention on common IO lines. If OE
circuitry turns off the output buffers t
is left LOW, internal
after WE goes LOW.
HZWE
AutoStore Operation
The CY14B102L/CY14B102N stores data to the nvSRAM using
one of the following three storage operations: Hardware Store
activated by HSB;
sequence; AutoStore on device power down. The AutoStore
operation is a unique feature of QuantumTrap technology and is
enabled by default on the CY14B102L/CY14B102N.
During a normal operation, the device draws current from V
charge a capacitor connected to the V
charge is used by the chip to perform a single STORE operation.
If the voltage on the V
automatically disconnects the V
operation is initiated with power provided by the V
Software Store activated by an address
pin. This stored
pin drops below V
CC
CAP
CAP
, the part
pin from VCC. A STORE
SWITCH
CAP
capacitor.
0–15
CC
Hardware STORE Operation
The CY14B102L/CY14B102N provides the HSB
and acknowledge the STORE operations. Use the HSB
request a hardware STORE cycle. When the HSB
LOW, the CY14B102L/CY14B102N conditionally initiates a
STORE operation after t
begins if a write to the SRAM has taken place since the last
STORE or RECALL cycle. The HSB
drain driver that is internally driven LOW to indicate a busy
condition when the STORE (initiated by any means) is in
progress.
SRAM read and write operations that are in progress when HSB
is driven LOW by any means are given time to complete before
the STORE operation is initiated. After HSB
CY14B102L/CY14B102N continues SRAM operations for
t
. If a write is in progress when HSB is pulled LOW it is
DELAY
enabled a time, t
cycles requested after HSB
to
returns HIGH. In case the write latch is not set, HSB will not be
to complete. However, any SRAM write
DELAY
driven LOW by the CY14B102L/CY14B102N but any SRAM
read and write cycles are inhibited until HSB
MPU or other external source.
During any STORE operation, regardless of how it is initiated,
the CY14B102L/CY14B102N continues to drive the HSB
LOW, releasing it only when the STORE is complete. Upon
. An actual STORE cycle only
DELAY
pin also acts as an open
goes LOW, the
goes LOW are inhibited until HSB
is returned HIGH by
[7]
pin to control
pin to
pin is driven
pin
Document #: 001-45754 Rev. *B Page 4 of 24
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
completion of the STORE operation, the
Notes
8. While there are 18 address lines on the CY14B102L (17 address lines on the CY14B102N), only the 13 address lines (A
14
- A2) are used to control software modes.
Rest of the address lines are don’t care.
9. The six consecutive address locations must be in the order listed. WE
must be HIGH during all six cycles to enable a nonvolatile cycle.
10. IO state depends on the state of OE
, BHE, and BLE. The IO table shown assumes OE, BHE, and BLE LOW.
CY14B102L/CY14B102N remains disabled until the HSB
returns HIGH. Leave the HSB
unconnected if it is not used.
pin
Hardware RECALL (Power Up)
During power up or after any low power condition
(V
CC<VSWITCH
V
again exceeds the sense voltage of V
CC
cycle is automatically initiated and takes t
During this time, HSB
), an internal RECALL request is latched. When
, a RECALL
SWITCH
will be driven LOW by the HSB driver.
HRECALL
to complete.
Software STORE
Transfer data from the SRAM to the nonvolatile memory with a
software address sequence. The CY14B102L/CY14B102N
software STORE cycle is initiated by executing sequential CE
controlled read cycles from six specific address locations in
exact order. During the STORE cycle an erase of the previous
nonvolatile data is first performed, followed by a program of the
nonvolatile elements. After a STORE cycle is initiated, further
input and output are disabled until the cycle is completed.
Because a sequence of READs from specific addresses is used
for STORE initiation, it is important that no other read or write
accesses intervene in the sequence, or the sequence is aborted
and no STORE or RECALL takes place.
To initiate the software STORE cycle, the following read
sequence must be performed.
1. Read Address 0x4E38 Valid READ
2. Read Address 0xB1C7 Valid READ
3. Read Address 0x83E0 Valid READ
4. Read Address 0x7C1F Valid READ
5. Read Address 0x703F Valid READ
6. Read Address 0x8FC0 Initiate STORE Cycle
Table 1. Mode Selection
The software sequence may be clocked with CE
controlled reads. After the sixth address in the sequence
or OE
controlled reads
is entered, the STORE cycle commences and the chip is
disabled. HSB
will be driven LOW. It is important to use read
cycles and not write cycles in the sequence, although it is not
necessary that OE be LOW for a valid sequence. After the
t
cycle time is fulfilled, the SRAM is activated again for the
STORE
read and write operation.
Software RECALL
Transfer the data from the nonvolatile memory to the SRAM with
a software address sequence. A software RECALL cycle is
initiated with a sequence of read operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE
performed.
1. Read Address 0x4E38 Valid READ
2. Read Address 0xB1C7 Valid READ
3. Read Address 0x83E0 Valid READ
4. Read Address 0x7C1F Valid READ
5. Read Address 0x703F Valid READ
6. Read Address 0x4C63 Initiate RECALL Cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared; then, the nonvolatile information is transferred into the
SRAM cells. After the t
ready for read and write operations. The RECALL operation
does not alter the data in the nonvolatile elements.
controlled read operations must be
cycle time, the SRAM is again
RECALL
CE WE OE, BHE, BLE
[3]
A15 - A
[8]
0
H X X X Not Selected Output High Z Standby
L H L X Read SRAM Output Data Active
L L X X Write SRAM Input Data Active
L H L 0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Document #: 001-45754 Rev. *B Page 5 of 24
Mode IO Power
Output Data
Active
[9, 10]
Output Data
Output Data
Output Data
Output Data
Output Data
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
Table 1. Mode Selection (continued)
CE WE OE, BHE, BLE
[3]
L H L 0x4E38
L H L 0x4E38
L H L 0x4E38
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
[8]
0
Mode IO Power
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore Enable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile Store
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active I
A15 - A
Recall
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) must be issued to save
the AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Data Protection
The CY14B102L/CY14B102N protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when V
is in a write mode (both CE
CC
< V
. If the CY14B102L/CY14B102N
SWITCH
and WE are LOW) at power up, after
a RECALL or STORE, the write is inhibited until the SRAM is
enabled after t
inadvertent writes during power up or brown out conditions.
(HSB to output active). This protects against
LZHSB
Noise Considerations
Refer to CY application note AN1064.
Active
Active
[9, 10]
CC2
[9, 10]
[9, 10]
Document #: 001-45754 Rev. *B Page 6 of 24
[+] Feedback
PRELIMINARY
CY14B102L, CY14B102N
Maximum Ratings
Notes
11. Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and V
CC
= 3V. Not 100% tested.
12. The HSB
pin has I
OUT
= -2 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
13. V
CAP
(Storage capacitor) nominal value is 68uF.
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Maximum Accumulated Storage Time
............At 150°C Ambient Temperature........................1000h
............At 85°C Ambient Temperature..................... 20 Years
Ambient Temperature with
Power Applied ............................................ –55°C to +150°C
Supply Voltage on V
Voltage Applied to Outputs
in High-Z State.......................................–0.5V to V
Input Voltage...........................................–0.5V to Vcc + 0.5V
Relative to GND ..........–0.5V to 4.1V
CC
CC
+ 0.5V
Package Power Dissipation
Capability (T
= 25°C) ................................................... 1.0W
A
Surface Mount Pb Soldering
Temperature (3 Seconds) .......................................... +260°C
DC Output Current (1 output at a time, 1s duration).... 15 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Range Ambient Temperature V
Commercial 0°C to +70°C 2.7V to 3.6V
Industrial –40°C to +85°C 2.7V to 3.6V
Automotive –40°C to +125°C 2.7V to 3.6V
CC
Transient Voltage (<20 ns) on
Any Pin to Ground Potential .................. –2.0V to V
+ 2.0V
CC
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7V to 3.6V)
Parameter Description Test Conditions Min Max Unit
I
CC1
I
CC2
I
CC3
I
CC4
I
SB
[11]
Average VCC Current tRC = 20 ns
t
= 25 ns
RC
t
= 45 ns
RC
Values obtained without output loads (I
t
= 25 ns
RC
t
= 45 ns
RC
Values obtained without output loads (I
Average VCC Current
during STORE
Average VCC Current at
t
= 200 ns, 3V, 25°C
RC
typical
Average V
during AutoStore Cycle
CAP
Current
All Inputs Don’t Care, VCC = Max
Average current for duration t
All I/P cycling at CMOS levels.
Values obtained without output loads (I
All Inputs Don’t Care, VCC = Max
Average current for duration t
VCC Standby Current CE > (VCC – 0.2). All others V
current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
[12]
I
I
V
V
V
V
V
IX
OZ
IH
IL
OH
OL
CAP
Input Leakage Current
(except HSB
)
Input Leakage Current
(for HSB
)
Off-State Output
Leakage Current
V
CC
V
CC
VCC = Max, VSS < V
or WE < V
Input HIGH Voltage 2.0 VCC +
Input LOW Voltage Vss – 0.5 0.8 V
Output HIGH Voltage I
Output LOW Voltage I
[13]
Storage Capacitor Between V
OUT
OUT
Commercial 65
65
50
OUT
= 0 mA)
Industrial 70
70
52
Automotive 90
75
= 0 mA)
OUT
10 mA
STORE
35 mA
= 0 mA).
OUT
5mA
STORE
= Max, VSS < V
= Max, VSS < V
IL
< 0.2V or > (VCC – 0.2V). Standby
IN
< V
IN
CC
< V
IN
CC
< VCC, CE or OE > V
OUT
or BHE/BLE > V
IH
–1 +1 μA
–100 +1 μA
–1 +1 μA
IH
5mA
0.5
= –2 mA 2.4 V
= 4 mA 0.4 V
pin and VSS, 5V Rated 61 180 μF
CAP
mA
mA
mA
mA
mA
mA
mA
mA
V
Document #: 001-45754 Rev. *B Page 7 of 24
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PRELIMINARY
CY14B102L, CY14B102N
Data Retention and Endurance
3.0V
OUTPUT
5 pF
R1
R2
789Ω
3.0V
OUTPUT
30 pF
R1
R2
789Ω
for tri-state specs
577Ω
577Ω
Note
14. These parameters are guaranteed but not tested.
Parameter Description Min Unit
DATA
NV
C
R
Data Retention 20 Years
Nonvolatile STORE Operations 200 K
Capacitance
In the following table, the capacitance parameters are listed.
Parameter Description Test Conditions Max Unit
C
C
IN
OUT
Input Capacitance TA = 25°C, f = 1 MHz,
Output Capacitance 7 pF
[14]
= 0 to 3.0V
V
CC
7pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
Parameter Description Test Conditions 48-FBGA 44-TSOP II 54-TSOP II Unit
Θ
Θ
Thermal Resistance
JA
(Junction to Ambient)
Thermal Resistance
JC
(Junction to Case)
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
Figure 5. AC Test Loads
[14]
28.82 31.11 30.73 °C/W
7.84 5.56 6.08 °C/W
AC Test Conditions
Input Pulse Levels.................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <
Input and Output Timing Reference Levels.................... 1.5V
Document #: 001-45754 Rev. *B Page 8 of 24
3 ns
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