❐ Software Protection using Write Disable Instruction
❐ Software Block Protection for 1/4,1/2, or entire Array
®
nonvolatile elements initiated au-
■ Low Power Consumption
❐ Single 3V +20%, –10% operation
❐ Average Vcc current of 10 mA at 40 MHz operation
■ Industry Standard Configurations
❐ Commercial and industrial temperatures
®
)
❐ CY14B101Q1 has identical pin configuration to industry stan-
dard 8-pin NV Memory
❐ 8-pin DFN and 16-pin SOIC Packages
❐ RoHS compliant
Functional Overview
The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3
combines a 1 Mbit nonvolatile static RAM with a nonvolatile
element in each memory cell. The memory is organized as 128K
words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most
reliable nonvolatile memory. The SRAM provides infinite read
and write cycles, while the QuantumTrap cell provides highly
reliable nonvolatile storage of data. Data transfers from SRAM to
the nonvolatile elements (STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM from the nonvolatile memory (RECALL operation).
Both STORE and RECALL operations can also be triggered by
the user.
Cypress Semiconductor Corporation•198 Champion Court•San Jose, CA 95134-1709•408-943-2600
Document #: 001-50091 Rev. *A Revised February 2, 2009
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
Pinouts
CY14B101Q2
To p Vi e w
not to scale
CS
SO
V
CAP
GND
V
CC
HOLD
SCK
SI
CY14B101Q1
To p Vi e w
not to scale
CS
SO
WP
GND
V
CC
HOLD
SCK
SI
NC
GND
WP
V
CAP
1
2
3
4
5
6
7
8
9
10
11
12
13
NC
16
15
14
V
CC
SO
SI
SCK
CS
HSB
NC
NC
NC
HOLD
NC
CY14B101Q3
To p Vi e w
not to scale
1. HSB
pin is not available in 8 DFN packages.
2. CY14B101Q1A part does not have WP
pin.
3. CY14B101Q2A part does not have V
CAP
pin and does not support AutoStore.
Figure 1. Pin Diagram - 8-Pin DFN
Figure 2. Pin Diagram - 16-Pin SOIC
[1, 2, 3]
Table 1. Pin Definitions
Pin NameI/O TypeDescription
CS
SCKInputSerial Clock. Runs at speeds up to max 40 MHz. All inputs are latched at the rising edge of this
SIInputSerial Input. Pin for input of all SPI instructions and data.
SOOutputSerial Output. Pin for output of data through SPI.
WP
HOLD
HSB
V
CAP
Input/OutputHardware STORE Busy: A weak internal pull up keeps this pin pulled high. If not used, this pin is
Power SupplyAutoStore Capacitor. Supplies power to the nvSRAM during power loss to STORE data from the
NCNo ConnectNo Connect: This pin is not connected to the die.
V
CC
Document #: 001-50091 Rev. *APage 2 of 22
GNDPower SupplyGround
Power SupplyPower Supply (2.7 to 3.6V)
InputChip Select. Activates the device when pulled LOW. Driving this pin high puts the device in low
power standby mode.
clock. Outputs are driven at the falling edge of the clock.
InputWrite Protect. Implements hardware write protection in SPI.
InputHOLD Pin. Suspends Serial Operation.
left as No Connect.
Output: Indicates busy status of nvSRAM when LOW.
Input: Hardware STORE implemented by pulling this pin LOW externally.
SRAM to nonvolatile elements. If AutoStore is not needed, this pin must be left as No Connect. It
must never be connected to GND.
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
Device Operation
CY14B101Q1/CY14B101Q2/CY14B101Q3 is 1 Mbit nvSRAM
memory with a nonvolatile element in each memory cell. All the
reads and writes to nvSRAM happen to the SRAM which gives
nvSRAM the unique capability to handle infinite writes to the
memory. The data in SRAM is secured by a STORE sequence
which transfers the data in parallel to the nonvolatile Quantum
Trap cells. A small capacitor (V
SRAM data in nonvolatile cells when power goes down providing
power down data security. The Quantum Trap nonvolatile
elements built in the reliable SONOS technology make nvSRAM
the ideal choice for secure data storage.
The 1 Mbit memory array is organized as 128K words x 8 bits.
The memory can be accessed through a standard SPI interface
that enables very high clock speeds upto 40 MHz with zero cycle
delay read and write cycles. This device supports SPI modes 0
and 3 (CPOL, CPHA = 0, 0 & 1, 1) and operates as SPI slave.
The device is enabled using the Chip Select pin (
accessed through Serial Input (SI), Serial Output (SO), and
Serial Clock (SCK) pins.
This device provides the feature for hardware and software write
protection through WP
along with mechanisms for block write protection (1/4, 1/2, or full
array) using BP0 and BP1 pins in the status register. Further, the
HOLD
pin can be used to suspend any serial communication
without resetting the serial sequence.
CY14B101Q1/CY14B101Q2/CY14B101Q3 uses the standard
SPI opcodes for memory access. In addition to the general SPI
instructions for read and write, it provides four special
instructions which enable access to four nvSRAM specific
functions: STORE, RECALL, AutoStore Disable (ASDISB), and
AutoStore Enable (ASENB).
The major benefit of nvSRAM SPI over serial EEPROMs is that
all reads and writes to nvSRAM are performed at the speed of
SPI bus with zero delay. Therefore, no wait time is required after
any of the memory accesses. The STORE and RECALL
operations need finite time to complete and all memory accesses
are inhibited during this time. While a STORE or RECALL
operation is in progress, the busy status of the device is indicated
by the Hardware STORE Busy (HSB
the RDY
The Device is available in three different pin configurations that
enable the user to choose a part which fits in best in their application
Table 2. Feature Summary
WP
V
HSB
AutoStoreNoYesYes
Power Up
RECALL
Hardware
STORE
Software
STORE
bit of the Status Register.
. The Feature summary is given in Table 2.
FeatureCY14B101Q1CY14B101Q2CY14B101Q3
CAP
pin and WRDI instruction respectively
YesNoYe s
NoYesYes
NoNoYes
YesYesYes
NoNoYes
YesYesYes
) is used to AutoStore the
CAP
) pin and also reflected on
CS
) and
SRAM Write
All writes to nvSRAM are carried out on the SRAM and do not
use up any endurance cycles of the nonvolatile memory. This
enables user to perform infinite write operations. A Write cycle is
performed through the SPI WRITE instruction. The WRITE
instruction is issued through the SI pin of the nvSRAM and
consists of the WRITE opcode, three bytes of address, and one
byte of data. Write to nvSRAM is done at SPI bus speed with zero
cycle delay.
The device allows burst mode writes to be performed through
SPI. This enables write operations on consecutive addresses
without issuing a new WRITE instruction. When the last address
in memory is reached, the address rolls over to 0x0000 and the
device continues to write.
The SPI write cycle sequence is defined explicitly in the Memory
Access section of SPI Protocol Description.
SRAM Read
A read cycle is performed at the SPI bus speed and the data is
read out with zero cycle delay after the READ instruction is
performed. The READ instruction is issued through the SI pin of
the nvSRAM and consists of the READ opcode and 3 bytes of
address. The data is read out on the SO pin.
This device allows burst mode reads to be performed through
SPI. This enables reads on consecutive addresses without
issuing a new READ instruction. When the last address in
memory is reached in burst mode read, the address rolls over to
0x0000 and the device continues to read.
The SPI read cycle sequence is defined explicitly in the Memory
Access section of SPI Protocol Description.
STORE Operation
STORE operation transfers the data from the SRAM to the
nonvolatile Quantum Trap cells. The device stores data to the
nonvolatile cells using one of three STORE operations:
AutoStore, activated on device power down; Software STORE,
activated by a STORE instruction in the SPI; Hardware STORE,
activated by the HSB
previous nonvolatile data is first performed, followed by a
program of the nonvolatile elements. After a STORE cycle is
initiated, further input and output are disabled until the cycle is
completed.
The HSB signal or the RDY bit in the Status register can be
monitored by the system to detect if a STORE cycle is in
progress. The busy status of nvSRAM is indicated by HSB
pulled LOW or RDY
nonvolatile STOREs, AutoStore and Hardware STORE operations are ignored unless at least one write operation has taken
place since the most recent STORE or RECALL cycle. Software
initiated STORE cycles are performed regardless of whether a
write operation has taken place.
. During the STORE cycle, an erase of the
being
bit being set to ‘1’. To avoid unnecessary
AutoStore Operation
The AutoStore operation is a unique feature of nvSRAM which
automatically stores the SRAM data to QuantumTrap during
power down. This Store mechanism is implemented using a
Document #: 001-50091 Rev. *APage 3 of 22
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
capacitor (V
0.1uF
Vcc
10kOhm
V
CAP
Vcc
CS
V
CAP
V
SS
data in the nonvolatile memory when power goes down.
During normal operation, the device draws current from V
charge the capacitor connected to the V
voltage on the V
the device inhibits all memory accesses to nvSRAM and
) and enables the device to safely STORE the
CAP
pin. When the
pin drops below V
CC
CAP
during power down,
SWITCH
CC
Figure 3. AutoStore Mode
to
automatically performs a conditional STORE operation using the
charge from the V
initiated if no write cycle has been performed since last RECALL.
capacitor. The AutoStore operation is not
CAP
During power down, the memory accesses are inhibited after the
voltage on V
writes, it must be ensured that CS
pin drops below V
CC
. To avoid inadvertent
SWITCH
is not left floating prior to this
event. Therefore, during power down the device must be
deselected and CS must be allowed to follow VCC.
Figure 3 shows the proper connection of the storage capacitor
(V
) for AutoStore operation. Refer to DC Electrical Charac-
CAP
teristics on page 13 for the size of the V
Note CY14B101Q1 does not support AutoStore operation. The
user must perform Software STORE operation by using the SPI
STORE instruction to secure the data.
CAP
.
RECALL Operation
A RECALL operation transfers the data stored in the nonvolatile
Quantum Trap elements to the SRAM. A RECALL may be
Software Store Operation
Software STORE enables the user to trigger a STORE operation
through a special SPI instruction. This operation is initiated
irrespective of whether a write has been performed since last nv
operation.
A STORE cycle takes t
memory accesses to nvSRAM are inhibited. The RDY
Status register or the HSB
or Busy status of the nvSRAM. After the t
completed, the SRAM is activated again for read and write
operations.
to complete, during which all the
STORE
bit of the
pin may be polled to find the Ready
cycle time is
STORE
initiated in two ways: Hardware RECALL, initiated on power up;
and Software RECALL, initiated by a SPI RECALL instruction.
Internally, RECALL is a two-step procedure. First, the SRAM
data is cleared. Next, the nonvolatile information is transferred
into the SRAM cells. All memory accesses are inhibited while a
RECALL cycle is in progress. The RECALL operation does not
alter the data in the nonvolatile elements.
Hardware Recall (Power Up)
During power up, when VCC crosses V
RECALL sequence is initiated which transfers the content of
SWITCH
nonvolatile memory on to the SRAM. The data would previously
Hardware STORE and HSB pin Operation
The HSB pin in CY14B101Q3 is used to control and
acknowledge STORE operations. If no STORE or RECALL is in
progress, this pin can be used to request a Hardware STORE
cycle. When the HSB
initiates a STORE operation after t
STORE cycle starts only if a write to the SRAM has been
performed since the last STORE or RECALL cycle. Reads and
Writes to the memory are inhibited for t
as HSB
The HSB
pin is LOW.
pin also acts as an open drain driver that is internally
driven LOW to indicate a busy condition, when a STORE cycle
(initiated by any means) or Power up RECALL is in progress.
Upon completion of the STORE operation, the nvSRAM remains
disabled until the HSB
unconnected if not used.
Note CY14B101Q1/CY14B101Q2 do not have HSB pin. RDY
of the SPI status register may be probed to determine the Ready
or Busy status of nvSRAM
pin is driven LOW, nvSRAM conditionally
duration. An actual
DELAY
duration or as long
STORE
pin returns HIGH. Leave the HSB pin
have been stored on the nonvolatile memory through a STORE
sequence.
A Power Up Recall cycle takes t
memory access is disabled during this time. HSB
time to complete and the
FA
used to detect the Ready status of the device. user
Software RECALL
Software RECALL enables the user to initiate a RECALL
operation to restore the content of nonvolatile memory on to the
SRAM. A Software RECALL is issued by using the SPI
instruction for RECALL.
A Software RECALL takes t
memory accesses to nvSRAM are inhibited. The controller must
provide sufficient delay for the RECALL operation to complete
before issuing any memory access instructions.
Disabling and Enabling AutoStore
bit
If the application does not require the AutoStore feature, it can
be disabled by using the ASDISB instruction. If this is done, the
nvSRAM does not perform a STORE operation at power down.
to complete during which all
RECALL
AutoStore can be re-enabled by using the ASENB instruction.
However, these operations are not nonvolatile and if the user
needs this setting to survive power cycle, a STORE operation
must be performed following Autostore Disable or Enable
operation.
Document #: 001-50091 Rev. *APage 4 of 22
, an automatic
pin can be
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
Note CY14B101Q2/CY14B101Q3 has AutoStore Enabled from
the factory. In CY14B101Q1, V
AutoStore option is not available. The Autostore Enable and
Disable instructions to CY14B101Q1 are ignored.
Note If AutoStore is disabled and V
open. V
Recall operation cannot be disabled in any case.
pin must never be connected to GND. Power Up
CAP
pin is not present and
CAP
is not required, leave it
CAP
Serial Peripheral Interface
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO) and Serial Clock (SCK) pins.
CY14B101Q1/CY14B101Q2/CY14B101Q3 provides serial
access to nvSRAM through SPI interface. The SPI bus on this
device can run at speeds up to 40 MHz
The SPI is a synchronous serial interface which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on SPI bus is activated using a chip select
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both these modes, data is clocked into nvSRAM on rising edge
of SCK starting from the first rising edge after CS
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS
operation is complete and before a new opcode can be issued.
The commonly used terms used in SPI protocol are given below:
SPI Master
The SPI Master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and master
may select any of the slave devices using the Chip Select pin.
All the operations must be initiated by the master activating a
slave device by pulling the CS
also generates the Serial Clock (SCK) and all the data transmission on SI and SO lines are synchronized with this clock.
SPI Slave
SPI slave device is activated by the master through the Chip
Select line. A slave device gets the Serial Clock (SCK) as an
input from the SPI master and all the communication is synchronized with this clock. SPI slave never initiates a communication
on the SPI bus and acts on the instruction from the master.
CY14B101Q1/CY14B101Q2/CY14B101Q3 operates as a SPI
slave and may share the SPI bus with other SPI slave devices.
Chip Select (CS
For selecting any slave device, the master needs to pull down
the corresponding CS
slave device only while the CS
is activated the first byte transferred from the bus
must go inactive after an
pin of the slave LOW. The master
)
pin. Any instruction can be issued to a
pin is LOW. When the device is
goes active.
not selected, data through the SI pin is ignored and the serial
output pin (SO) remains in a high impedance state.
Note A new instruction must begin with the falling edge of Chip
Select (CS
active Chip Select cycle.
Serial Clock (SCK)
Serial clock is generated by the SPI master and the communication is synchronized with this clock after CS
CY14B101Q1/CY14B101Q2/CY14B101Q3 enables SPI modes
0 and 3 for data communication. In both these modes, the inputs
are latched by the slave device on the rising edge of SCK and
outputs are issued on the falling edge. Therefore, the first rising
edge of SCK signifies the arrival of first bit (MSB) of SPI
instruction on the SI pin. Further, all data inputs and outputs are
synchronized with SCK.
Data Transmission - SI and SO
SPI data bus consists of two lines, SI and SO, for serial data
communication. The SI is also referred to as MOSI (Master Out
Slave In) and SO is referred to as MISO (Master In Slave Out).
The master issues instructions to the slave through the SI pin,
while the slave responds through the SO pin. Multiple slave
devices may share the SI and SO lines as described earlier.
Most Significant Bit (MSB)
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
The 1 Mbit serial nvSRAM requires a 3-byte address for any read
or write operation. However, since the actual address is only 17
bits, it implies that the first seven bits which are fed in are ignored
by the device. Although these seven bits are ‘don’t care’,
Cypress recommends that these bits are treated as 0s to enable
seamless transition to higher memory densities.
Serial Opcode
After the slave device is selected with CS
byte received is treated as the opcode for the intended operation.
CY14B101Q1/CY14B101Q2/CY14B101Q3 uses the standard
opcodes for memory accesses. In addition to the memory
accesses, it provides additional opcodes for the nvSRAM
specific functions: STORE, RECALL, AutoStore Enable, and
AutoStore Disable. Refer to Tabl e 3 on page 7 for details.
Invalid Opcode
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin and no
valid data is sent out on the SO pin. Opcode for a new instruction
is recognized only after the next falling edge of CS
Status Register
CY14B101Q1/CY14B101Q2/CY14B101Q3 has an 8-bit status
register. The bits in the status register are used to configure the
SPI bus. These bits are described in Tab l e 5 on page 8.
). Therefore, only one opcode can be issued for each
goes LOW.
going LOW, the first
.
Document #: 001-50091 Rev. *APage 5 of 22
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
Figure 4. System Configuration Using SPI nvSRAM
xQ101B41YCxQ101B41YC
uController
SCK
MOSI
MISO
SISOOSISKCSSCK
CS
HOLDHOLDCS
CS1
CS2
HOLD1
HOLD2
LSB
MSB
765432
10
CS
SCK
SI
0 12 34 5 6 7
CS
SCK
SI
765432
10
LSB
MSB
0 12 34 56 7
SPI Modes
CY14B101Q1/CY14B101Q2/CY14B101Q3 may be driven by a
microcontroller with its SPI peripheral running in either of the
following two modes:
■ SPI Mode 0 (CPOL=0, CPHA=0)
■ SPI Mode 3 (CPOL=1, CPHA=1)
For both these modes, input data is latched-in on the rising edge
of Serial Clock (SCK) starting from the first rising edge after CS
goes active. If the clock starts from a HIGH state (in mode 3), the
first rising edge, after the clock toggles, is considered. The output
data is available on the falling edge of Serial Clock (SCK).
Figure 5. SPI Mode 0
The two SPI modes are shown in Figure 5 and Figure 6. The
status of clock when the bus master is in Standby mode and not
transferring data is:
■ SCK remains at 0 for Mode 0
■ SCK remains at 1 for Mode 3
CPOL and CPHA bits must be set in the SPI controller for either
Mode 0 or Mode 3. The device detects the SPI mode from the
status of SCK pin when the device is selected by bringing the CS
pin LOW. If SCK pin is LOW when device is selected, SPI Mode
0 is assumed and if SCK pin is HIGH, it works in SPI Mode 3.
Figure 6. SPI Mode 3
Document #: 001-50091 Rev. *APage 6 of 22
[+] Feedback
PRELIMINARY
CY14B101Q1
CY14B101Q2
CY14B101Q3
SPI Operating Features
Power Up
Power up is defined as the condition when the power supply is
turned on and V
Chip Select (CS
Therefore, CS
up resistor. As a built-in safety feature, Chip Select (CS
edge sensitive and level sensitive. After power up, the device is
not selected until a falling edge is detected on Chip Select (CS).
This ensures that Chip Select (CS
before going Low to start the first operation.
As described earlier, nvSRAM performs a Power Up Recall
operation after power up and therefore, all memory accesses are
disabled for t
be probed to check the ready or busy status of nvSRAM after
power up.
Power On Reset
A Power On Reset (POR) circuit is included to prevent
inadvertent writes. At power up, the device does not respond to
any instruction until the VCC reaches the Power On Reset
threshold voltage (V
threshold, the device is internally reset and performs an Power
Up Recall operation. The device is in the following state after
POR:
■ Deselected (after Power up, a falling edge is required on Chip
Select (CS
■ Standby Power mode
■ Not in the Hold Condition
■ Status register state:
❐ Write Enable (WEN) bit is reset to 0.
❐ WPEN, BP1, BP0 unchanged from previous power down
The WPEN, BP1, and BP0 bits of the Status Register are nonvolatile bits and remain unchanged from the previous power down.
Before selecting and issuing instructions to the memory, a valid
and stable V
remain valid until the end of the transmission of the instruction.
Power Down
At power down (continuous decay of VCC), when VCC drops from
the normal operating voltage and below the V
voltage, the device stops responding to any instruction sent to it.
If a write cycle is in progress during power down, it is allowed
t
time to complete after Vcc transitions below V
DELAY
after which all memory accesses are inhibited and a conditional
AutoStore operation is performed (AutoStore is not performed if
no writes have happened since last RECALL cycle). This feature
prevents inadvertent writes to nvSRAM from happening during
power down.
However, to completely avoid the possibility of inadvertent writes
during power down, ensure that the device is deselected and is
in Standby Power Mode, and the Chip Select (CS
voltage applied on V
crosses Vswitch voltage. During this time, the
CC
) must be allowed to follow the VCC voltage.
must be connected to VCC through a suitable pull
) is both
) must have been HIGH,
duration after power up. The HSB pin can
RECALL
). After VCC transitions the POR
SWITCH
) before any instructions are started).
voltage must be applied. This voltage must
CC
threshold
SWITCH
SWITCH
) follows the
.
CC
Active Power and Standby Power Modes
When Chip Select (CS) is LOW, the device is selected, and is in
the Active Power mode. The device consumes I
specified in DC Electrical Characteristics on page 13. When Chip
Select (CS
) is HIGH, the device is deselected and the device
CC
goes into the Standby Power mode if a STORE or RECALL cycle
is not in progress. If a STORE or RECALL cycle is in progress,
device goes into the Standby Power Mode after the STORE or
RECALL cycle is completed. In the Standby Power mode, the
current drawn by the device drops to I
SB
.
SPI Functional Description
The CY14B101Q1/CY14B101Q2/CY14B101Q3 uses an 8-bit
instruction register. Instructions and their opcodes are listed in
Ta bl e 3 . All instructions, addresses, and data are transferred with
the MSB first and start with a HIGH to LOW CS
are, in all, 12 SPI instructions which provide access to most of
the functions in nvSRAM. Further, the WP
provide additional functionality driven through hardware.
Table 3. Instruction Set
Instruction
Category
Instruction
Name
OpcodeOperation
WREN0000 0110 Set Write Enable
Status Register
Control Instruc-
tions
WRDI0000 0100Reset Write
RDSR0000 0101Read Status
WRSR0000 0001Write Status
SRAM
Read/Write
Instructions
READ0000 0011 Read Data From
WRITE0000 0010Write Data To
STORE0011 1100 Software STORE
Special NV
Instructions
RECALL0110 0000Software
ASENB0101 1001 AutoStore Enable
ASDISB0001 1001 AutoStore Disable
Reserved- Reserved - 0001 1110Reserved for
,
The SPI instructions are divided based on their functionality in
the following types:
❐ Status Register Access: WRSR and RDSR instructions
❐ Write Protection Functions: WREN and WRDI instructions
along with WP pin and WEN, BP0, and BP1 bits
❐ SRAM memory Access: READ and WRITE instructions
❐ nvSRAM special instructions: STORE, RECALL, ASENB,
and ASDISB
transition. There
and HOLD pins
Enable Latch
Register
Register
Memory Array
Memory Array
RECALL
Internal use
current, as
Latch
Document #: 001-50091 Rev. *APage 7 of 22
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