Cypress CY14B101K User Manual

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CY14B101K

1 Mbit (128K x 8) nvSRAM With Real Time Clock

Features

STORE/

RECALL

CONTROL

POWER

CONTROL

SOFTWARE

DETECT

STATIC RAM

ARRAY

1024 X 1024

QuantumTrap

1024 x 1024

STORE

RECALL

COLUMN IO

COLUMN DEC

ROW DECODER

INPUT BUFFERS

HSB

CAP

- A

RTC

MUX

- A

INT

RTCbat

RTCcap

Logic Block Diagram

■ 25 ns, 35 ns, and 45 ns access times

■ Pin compatible with STK17TA8

■ Data integrity of Cypress nvSRAM combined with full featured

Real Time Clock (RTC)

❐ Low power, 350 nA RTC current ❐ Capacitor or battery backup for RTC

■ Watchdog timer

■ Clock alarm with programmable interrupts

■ Hands off automatic STORE on power down with only a small

capacitor

■ STORE to QuantumT rap™ initiated by software, device pin, or

on power down

■ RECALL to SRAM initiated by software or on power up

■ Infinite READ, WRITE, and RECALL cycles

■ High reliability ❐ Endurance to 200K cycles

❐ Data retention: 20 years at 55°C

■ Single 3V operation with tolerance of +20%, –10%

■ Commercial and industrial temperature

■ 48-Pin SSOP package (ROHS compliant)

Functional Description

The Cypress CY14B101K combines a 1 Mbit nonvolatile static RAM with a full featured real time clock in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM is read and written an infinite number of times, while independent, nonvola tile data resides in the nonvolatile elements.

The Real Time Clock function provides an accurate clock with leap year tracking and a programmable high accuracy oscillator. The alarm function is programmable for one time alarm or periodic seconds, minutes, hours, or days. There is also a programmable watchdog timer for process control.

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-06401 Rev. *I Revised February 24, 2009

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CY14B101K

Pin Configurations

CAP

HSB

OE A

DQ7

DQ5

DQ4

DQ3

INT

DQ0

DQ1

DQ2

48-SSOP

Top View

(Not To Scale)

RTCbat

RTCcap

Figure 1. 48-Pin SSOP

Table 1. Pin Definitions

Pin Name Alt IO Type Description

A0 – A

Input Address Inputs. Used to select one of the 131,072 bytes of the nvSRAM.

DQ0 – DQ7 Input Output Bidirectional Data IO Lines. Used as input or output lines depending on operation

NC No Connect No Connects. This pin is not connected to the die

Input Write Enable Input, Active LOW . When the chip is enabled and WE is LOW, data on the IO pins

is written to the specific address location.

CE OE

RTCcap

RTCbat

INT Output Interrupt Output. Program to respond to the clock alarm, the watchdog timer, and the power

HSB

CAP

Document Number: 001-06401 Rev. *I Page 2 of 28

Input Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip. Input Output Enable, Active LOW. The active low OE input enables the data output buffers during

READ cycles. Deasserting OE

Output Crystal Connection Drives crystal on start up.

Input Crystal Connection for 32.768 kHz crystal. Power Supply Capacitor Supplied Backup RTC Supply Voltage. (Left unconnected if V Power Supply Battery Supplied Backup RTC Supply Voltage. (Left unconnected if V

monitor. Programmable to either active HIGH (push or pull) or LOW (open drain).

Ground Ground for the Device. Must be connected to ground of the system.

Power Supply Power Supply Inputs to the Device.

Input Output Hardware Store Busy . When LOW this output indicates a Hardware S tore is in progress. When

pulled LOW external to the chip it initiates a nonvolatile STORE operation. A weak internal pull up resistor keeps this pin HIGH if not connected (connection optional).

Power Supply AutoStore™ Capacitor . Supplies power to nvSRAM during power loss to store data from SRAM

to nonvolatile elements.

high causes the IO pins to tri-state.

is used)

RTCbat

is used)

RTCcap

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CY14B101K

Device Operation

The CY14B101K nvSRAM consists of two functional components paired in the same physical cell. The components are SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the SRAM is transferred to the nonvolatile cell (the STORE operation), or from the nonvolatile cell to SRAM (the RECALL operation). Using this unique architecture, all cells are stored and recalled in parallel. During the STORE and RECALL operations, SRAM READ and WRITE operations are inhibited. The CY14B101K suppots infinite reads and writes similar to a typical SRAM. In addition, it provides infinite RECALL operations from the nonvolatile cells and up to 200K STORE operations.

See the “Truth Table For SRAM Operations” on page 22 for a complete description of read and write modes.

SRAM READ

The CY14B101K performs a READ cycle whenever CE and OE are LOW while WE and HSB are HIGH. The address specified on pins A accessed. When the READ is initiated by an address transition, the outputs are valid after a delay of tAA (see Figure 8 on page

17). If the READ is initiated by CE or at t

ACE

data outputs repeatedly respond to address changes within the t

access time without the need for transitions on any control

input pins. This remains valid until another address change or until CE or OE is brought HIGH, or WE or HSB is brought LOW.

SRAM WRITE

A WRITE cycle is performed whenever CE and WE are LOW and HSB

is HIGH. The address inputs must be stable before entering the WRITE cycle and must remain stable until either CE go HIGH at the end of the cycle. The data on the common IO pins DQ

0–7

the end of a WE controlled WRITE. Keep OE HIGH during the entire WRITE cycle to avoid data bus contention on common IO lines. If OE LOW, internal circuitry turns off the output buffers t goes LOW.

AutoStore® Operation

The CY14B101K stores data to nvSRAM using one of three storage operations:

1. Hardware Store activated by HSB

2. Software Store activated by an address sequence

3. AutoStore on device power down

AutoStore operation is a unique feature of QuantumTrap technology and is enabled by default on the CY14B101K.

During normal operations, the device draws current from V charge a capacitor connected to the V charge is used by the chip to perform a single STORE operation. If the voltage on the V

determines which of the 131,072 data bytes are

0-16

or OE, the outputs are valid at

, whichever is later (see Figure 9 on page 17). The

DOE

or WE

is written into the memory if the data is valid tSD before

controlled WRITE or before the end of an CE

is left

after WE

HZWE

, the part

pin drops below V

pin. This stored

CAP

SWITCH

automatically disconnects the V operation is initiated with power provided by the V

pin from VCC. A STORE

CAP

capacitor.

CAP

Figure 2. AutoStore Mode

CAP

0.1 F

10k Ohm

Figure 2 shows the proper connection of the storage capacitor

) for automatic store operation. Refer to DC Electrical

CAP

Characteristics on page 15 for the size of the V

on the V chip. A pull up should be placed on WE

pin is driven to 5V by a charge pump internal to the

CAP

to hold it inactive during

power up. This pull up is only effective if the WE

. The voltage

CAP

signal is tri-state during power up. Many MPUs tri-state their controls on power up. Verify this when using the pull up. When the nvSRAM comes out of power-on-recall, the MPU must be active or the WE

held

inactive until the MPU comes out of reset. To reduce unnecessary nonvolatile stores, AutoStore and

Hardware Store operations are ignored unless at least one WRITE operation takes place since the most recent STORE or RECALL cycle. Software initiated STORE cycles are performed regardless of whether a WRITE operation took place. Monitor the HSB signal by the system to detect if an AutoStore cycle is in progress.

Hardware STORE (HSB) Operation

The CY14B101K provides the HSB pin for controlling and acknowledging the STORE operations. Use the HSB request a hardware STORE cycle. When the HSB LOW, the CY14B101K conditionally initiates a STORE operation after t the SRAM has taken place since the last STORE or RECALL cycle. The HSB

. An actual STORE cycle only begins if a WRITE to

DELAY

pin also acts as an open drain driver that is internally driven LOW to indicate a busy condition while the STORE (initiated by any means) is in progress. This pin is externally pulled up if it is used to drive other inputs.

pin to

pin is driven

Document Number: 001-06401 Rev. *I Page 3 of 28

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CY14B101K

SRAM READ and WRITE operations that are in progress when

is driven LOW by any means are given time to complete

HSB before the STORE operation is initiated. After HSB the CY14B101K continues SRAM operations for t

, multiple SRAM READ operations take place. If a WRITE

DELAY

is in progress when HSB t

, to complete. However, any SRAM WRITE cycles

DELAY

requested after HSB

is pulled LOW, it is allowed a time,

goes LOW are inhibited until HSB returns

goes LOW,

. During

DELAY

HIGH. During any STORE operation, regardless of how it is initiated,

the CY14B101K continues to drive the HSB

pin LOW, releasing it only when the STORE is complete. After completing the STORE operation, the CY14B101K remains disabled until the HSB

pin returns HIGH. Leave the HSB unconnected if it is not

used.

Hardware RECALL (Power Up)

During power up or after any low power condition (V

CC<VSWITCH

again exceeds the sense voltage of V

cycle automatically initiates and takes t

), an internal RECALL request is latched. When

, a RECALL

SWITCH

HRECALL

to complete.

Software STORE

Data is transferred from the SRAM to the nonvolatile memory by a software address sequence. The CY14B101K software STORE cycle is initiated by executing sequential CE controlled READ cycles from six specific address locations in exact order. During the STORE cycle, an erase of the previous nonvolatile data is first performed followed by a program of the nonvolatile elements. After a STORE cycle is initiated, further READs and WRITEs are inhibited until the cycle is completed.

Because a sequence of READs from specific addresses is used for STORE initiation, it is important that no other READ or WRITE accesses intervene in the sequence. If it intervenes, the sequence is aborted and no STORE or RECALL takes place.

To initiate the software STORE cycle, the following READ sequence are performed:

1. Read Address 0x4E38 Valid READ

2. Read Address 0xB1C7 Valid READ

3. Read Address 0x83E0 Valid READ

4. Read Address 0x7C1F Valid READ

5. Read Address 0x703F Valid READ

6. Read Address 0x8FC0 Initiate STORE cycle

The software sequence is clocked with CE

controlled READs. After the sixth address in the sequence is

controlled READs or

entered, the STORE cycle commences and the chip is disabled. It is important to use read cycles and not write cycles in the sequence, although it is not necessary that OE valid sequence. After the t is activated again for READ and WRITE operation.

cycle time is fulfilled, the SRAM

STORE

be LOW for a

Software RECALL

Data is transferred from the nonvolatile memory to the SRAM by a software address sequence. A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, the following sequence of CE

controlled READ operations are

performed:

1. Read Address 0x4E38 Valid READ

2. Read Address 0xB1C7 Valid READ

3. Read Address 0x83E0 Valid READ

4. Read Address 0x7C1F Valid READ

5. Read Address 0x703F Valid READ

6. Read Address 0x4C63 Initiate RECALL Cycle

Internally, RECALL is a two step procedure. First, the SRAM data is cleared and then the nonvolatile information is transferred into the SRAM cells. After the t ready for READ and WRITE operations. The RECALL operation

cycle time, the SRAM is again

RECALL

does not alter the data in the nonvolatile elements.

Data Protection

The CY14B101K protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and WRITE operations. The low voltage condition is detected when V

is less than V

mode (both CE

and WE LOW) at power up, after a RECALL or

. If the CY14B101K is in a WRITE

SWITCH

after a STORE, the WRITE is inhibited until a negative transition

or WE is detected. This protects against inadvertent writes

on CE during power up or brownout conditions.

Noise Considerations

The CY14B101K is a high speed memory and must have a high frequency bypass capacitor of approximately 0.1 µF connected between V as possible. As with all high speed CMOS ICs, careful routing of power, ground, and signals reduce circuit noise.

and VSS, using leads and traces that are as short

Document Number: 001-06401 Rev. *I Page 4 of 28

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CY14B101K

Low Average Active Power

CMOS technology provides the CY14B101K the benefit of drawing significantly less current when it is cycled at times longer than 50 ns. Figure 3 shows the relationship between ICC and READ/WRITE Cycle Time. The worst case current consumption is shown for commercial temperature range, V chip enable at maximum frequency. Only standby current is drawn when the chip is disabled.

The overall average current drawn by the CY14B101K depends on the following items:

■ The duty cycle of chip enable

■ The overall cycle rate for accesses

■ The ratio of READs to WRITEs

■ The operating temperature

■ The V

■ IO loading

level

Figure 3. Current versus Cycle Time

= 3.6V, and

Best Practices

nvSRAM products have been used effectively for over 15 years. While ease-of-use is one of the product’s main system values, experience gained working with hundreds of applications has resulted in the following suggestions as best practices:

■ The nonvolatile cells in an nvSRAM are programmed on the

test floor during final test and quality assurance. Incoming inspection routines at customer or contract manufacturer’s sites sometimes reprograms these values. Final NV patterns are typically repeating patterns of AA, 55, 00, FF, A5, or 5A. The end product’s firmware should not assume that an NV array is in a set programmed state. Routines that check memory content values to determine first time system configuration and cold or warm boot status, must always program a unique NV pattern (for example, complex 4-byte pattern of 46 E6 49 53 hex or more random bytes) as part of the final system manufacturing test to ensure these system routines work consistently.

■ The OSCEN bit in the Calibration register at 0x1FFF8 should

be set to 1 to preserve battery life when the system is in storage (see Stopping and Starting the Oscillator on page 7).

■ The Vcap value specified in this data sheet includes a minimum

and a maximum value size. The best practice is to meet this requirement and not exceed the maximum Vcap value because the higher inrush currents may reduce the reliability of the internal pass transistor. Customers who want to use a larger Vcap value to make sure there is extra store charge should discuss their Vcap size selection with Cypress.

Document Number: 001-06401 Rev. *I Page 5 of 28

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CY14B101K

Table 2. Mode Selection

Notes

1. The six consecutive address locations are in the order listed. WE

is HIGH during all six cycles to enable a nonvolatile cycle.

2. While there are 17 address lines on the CY14B101K, only the lower 16 lines are used to control software modes.

3. O state depends on the state of OE

. The IO table shown is based on OE Low.

CE WE OE

A15 – A0 Mode IO Power

H X X X Not Selected Output High Z Standby L H L X READ SRAM Output Data Active L L X X WRITE SRAM Input Data Active L H L 0x4E38

0xB1C7

0x83E0

0x7C1F

0x703F

0x8FC0

Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM

Nonvolatile

Output Data Output Data Output Data Output Data Output Data

Output High Z

Active I

CC2

STORE

L H L 0x4E38

0xB1C7

0x83E0

0x7C1F

0x703F

0x4C63

Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM

Nonvolatile

Output Data Output Data Output Data Output Data Output Data

Output High Z

Active

[1, 2, 3]

RECALL

[1, 2, 3]

Document Number: 001-06401 Rev. *I Page 6 of 28

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CY14B101K

Real Time Clock Operation

nvTIME Operation

The CY14B101K offers internal registers that contain clock, alarm, watchdog, interrupt, and control functions. RTC registers use the last 16 address locations of the SRAM. Internal double buffering of the clock and the clock or timer information registers prevents accessing transitional internal clock data during a READ or WRITE operation. Double buffering also circumvents disrupting normal timing counts or clock accuracy of the internal clock while accessing clock data. Clock and Alarm Registers store data in BCD format.

The RTC register addresses for CY14B101K range from 0x1FFF0 to 0x1FFFF. Refer to RTC Register Map[5, 6] on page 11 and Register Map Detail on page 12 for detailed description.

Clock Operations

The clock registers maintain time up to 9,999 years in one second increments. The user sets the time to any calendar time and the clock automatically keeps track of days of the week, month, leap years, and century transitions. There are eight registers dedicated to the clock functions that are used to set time with a WRITE cycle and to READ time during a READ cycle. These registers contain the Time of Day in BCD format. Bits defined as ‘0’ are currently not used and are reserved for future use by Cypress.

Reading the Clock

The double buffered RTC register structure reduces the chance of reading incorrect data from the clock. The user should stop internal updates to the CY14B101K time keeping registers before reading clock data, to prevent reading of data in transition. Stopping the internal register updates does not affect clock accuracy.

The updating process is stopped by writing a ‘1’ to the read bit ‘R’ (in the flags register at 0x1FFF0), and does not restart until a ‘0’ is written to the read bit. The RTC registers are then read while the internal clock continues to run. After a ‘0’ is written to the read bit (‘R’), all CY14B101K registers are simultaneously updated within 20 ms.

Setting the Clock

Setting the write bit ‘W’ (in the flags register at 0x1FFF0) to a ‘1’ stops updates to the time keeping registers and enables the time to be set. The correct day, date, and time are then written into the registers in 24 hour BCD format. The time written is referred to as the ‘Base Time’. This value is stored in nonvolatile registers and used in calculation of the current time. Resetting the WRITE bit to ‘0’ transfers those values to the actual clock counters, after which the clock resumes normal operation.

Backup Power

The RTC in the CY14B101K is intended for permanently powered operations. Either the V connected depending on whether a capacitor or battery is chosen for the application. When the primary power, V and drops below V power supply.

, the device switches to the backup

SWITCH

RTCcap

or V

RTCbat

pin is

, fails

The clock oscillator uses very little current to maximize the backup time available from the backup source. Regardless of clock operation with the primary source removed, the data stored in nvSRAM is secure, as it is stored in the nonvolatile elements when power was lost.

During backup operation, the CY14B101K consumes a maximum of 300 nA at 2V. The user should choose capacitor or battery values according to the application.

Backup time values, based on maximum current specifications, are shown in the following table. Nominal times are approximately three times longer.

T able 3. RTC Backup Time

Capacitor V alue Backup Time

0.1F 72 hours

0.47F 14 days

1.0F 30 days

Using a capacitor has the obvious advantage of recharging the backup source each time the system is powered up. If a battery is used, use a 3V lithium; the CY14B101K only sources current from the battery when the primary power is removed. However, the battery is not recharged at any time by the CY14B101K. The battery capacity is chosen for total anticipated cumulative downtime required over the life of the system.

Stopping and Starting the Oscillator

The OSCEN bit in the calibration register at 0x1FFF8 controls the enable and disable of the oscillator. This active LOW bit is nonvolatile and is shipped to customers in the “enabled” (set to

0) state. To preserve the battery life when the system is in storage, OSCEN bit must be set to ‘1’. This turns off the oscillator circuit, extending the battery life. If the OSCEN bit goes from disabled to enabled, it takes approximately 5 seconds (10 seconds maximum) for the oscillator to start.

While system power is off, if the voltage on the backup supply (V the oscillator may fail.The CY14B101K has the ability to dete ct oscillator failure when system power is restored. This is recorded in the OSCF (Oscillator Failed bit) of the Flags register at address 0x1FFF0. When the device is powered on (V above V If the OSCEN bit is enabled and the oscillator is not active within the first 5 ms, the OSCF bit is set to “1”. The system must check for this condition and then write ‘0’ to clear the flag. Note that in addition to setting the OSCF flag bit, the time registers are reset to the “Base Time” (see “Setting the Clock” on page 7), which is the value last written to the time keeping registers. The Control or Calibration registers and the OSCEN bit are not affected by the “oscillator failed” condition.

The value of OSCF must be reset to ‘0’ when the time registers are written for the first time. This initializes the state of this bit which may have become set when the system was first powered on.

To reset OSCF, set the write bit “W” (in the flags register at 0x1FFF0) to “1” to enable writes to the Flag register. Write a “0” to the OSCF bit and then reset the write bit to “0” to disable writes.

RTCcap

or V

SWITCH

) falls below their respective minimum level,

RTCbat

), the OSCEN bit is checked for “enabled” status.

goes

Document Number: 001-06401 Rev. *I Page 7 of 28

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CY14B101K

Calibrating the Clock

The RTC is driven by a quartz controlled oscillator with a nominal frequency of 32.768 kHz. Clock accuracy depends on the quality of the crystal and calibration. The crystal oscillators typically have an error of + employs a calibration circuit that improves the accuracy to +1/–2 ppm at 25°C. This implies an error of +2.5 seconds to -5 seconds per month.

The

calibration circuit adds or subtracts counts from the oscillator

divider circuit to achieve this accuracy. The number of pulses that are suppressed (subtracted, negative calibration) or split (added, positive calibration) depends upon the value loaded into the five calibration bits found in Calibration register at 0x1FFF8. The calibration bits occupy the five lower order bits in the Calibration register. These bits are set to represent any value between ‘0’ and 31 in binary form. Bit D5 is a sign bit, where a ‘1’ indicates positive calibration and a ‘0’ indicates negative calibration. Adding counts speeds the clock up and subtracting counts slows the clock down. If a binary ‘1’ is loaded into the register, it corresponds to an adjustment of 4.068 or –2.034 ppm offset in oscillator error, depending on the sign.

Calibration occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second shortened by 128 or lengthened by 256 oscillator cycles. If a binary ‘1’ is loaded into the register, only the first two minutes of the 64 minute cycle is modified. If a binary 6 is loade d, the first 12 ar e affected, and so on. Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator cycles for every 125,829,120 actual oscillator cycles, that is, 4.068 or –2.034 ppm of adjustment per calibration step in the Calibration register.

To determine the required calibration, the CAL bit in the Flags register (0x1FFF0) must be set to ‘1’. This causes the INT pin to toggle at a nominal frequency of 512 Hz. Any deviation measured from the 512 Hz indicates the degree and direction of the required correction. For example, a reading of 512.01024 Hz indicates a +20 ppm error. Hence, a decimal value of –10 (001010b) must be loaded into the Calibration register to offset this error.

Note Setting or changing the Calibration register does not affect the test output frequency.

To set or clear CAL, set the write bit “W” (in the flags register at 0x1FFF0) to “1” to enable writes to the Flag register. Write a value to CAL, and then reset the write bit to “0” to disable writes.

20ppm to +35ppm. However, CY14B101K

Alarm

The alarm function compares user programmed values of alarm time and date (stored in the registers 0x1FFF1-5) with the corresponding time of day and date values. When a match occurs, the alarm internal flag (AF) is set and an interrupt is generated on INT pin if Alarm Interrupt Enable (AIE) bit is set.

There are four alarm match fields - date, hours, minutes, and seconds. Each of these fields has a match bit that is used to determine if the field is used in the alarm match logic. Setting the match bit to ‘0’ indicates that the corresponding fie ld is used in

the match process. Depending on the match bits, the alarm occurs as specifically as once a month or as frequently as once every minute. Selecting none of the match bits (all 1s) indicates that no match is required and therefore, alarm is disabled. Selecting all match bits (all 0s) causes an exact time and date match.

There are two ways to detect an a lar m ev ent: by re adi ng t he AF flag or monitoring the INT pin. The AF flag in the flags register at 0x1FFF0 indicates that a date or time match has occurred. The AF bit is set to “1” when a match occurs. Reading the flags or control register clears the alarm flag bit (and all others). A hardware interrupt pin may also be used to detect an alarm event.

Note CY14B101K requires the alarm match bit for seconds (0x1FFF2 - D7) to be set to ‘0’ for proper operation of Alarm Flag and Interrupt.

Alarm registers are not nonvolatile and, therefore, need to be reinitialized by software on power up. To set, clear or enable an alarm, set the ‘W’ bit (in Flags Register - 0x1FFF0) to ‘1’ to enable writes to Alarm Registers. After writing the alarm value, clear the ‘W’ bit back to “0” for the changes to take effect.

Watchdog Timer

The Watchdog Timer is a free running down counter that uses the 32 Hz clock (31.25 ms) derived from the crystal oscillator. The oscillator must be running for the watchdog to function. It begins counting down from the value loaded in the Watchdog Timer register.

The timer consists of a loadable register and a free running counter. On power up, the watchdog time out value in register 0x1FFF7 is loaded into the Counter Load register. Counting begins on power up and restarts from the loadable value any time the Watchdog Strobe (WDS) bit is set to ‘1’. The counter is compared to the terminal value of ‘0’. If the counter reaches this value, it causes an internal flag and an optional interrupt output. You can prevent the time out interrupt by setting WDS bit to ‘1’ prior to the counter reaching ‘0’. This causes the counter to reload with the watchdog time out value and to be restarted. As long as the user sets the WDS bit prior to the counter reaching the terminal value, the interrupt and WDT flag never occur.

New time out values are written by setting the watchdog write bit to ‘0’. When the WDW is ‘0’, new writes to the watchdog time out value bits D5-D0 are enabled to modify the time out value. When WDW is ‘1’, writes to bits D5-D0 are ignored. The WDW function enables a user to set the WDS bit without concern that the watchdog timer value is modified. A logical diagram of the watchdog timer is shown in Figure 4. Note that setting the watchdog time out value to ‘0’ disables the watchdog function.

The output of the watchdog timer is the flag bit WDF that is set if the watchdog is allowed to time out. The flag is set upon a watchdog time out and cleared when the user reads the Flags or Control registers. If the watchdog time out occurs, the user also enables an optional interrupt source to drive the INT pin.

Document Number: 001-06401 Rev. *I Page 8 of 28

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CY14B101K

Figure 4. Watchdog Timer Block Diagram

1 Hz

Oscillator

Clock

Divider

Counter

Zero

Compare

WDF

WDS

Load

WDW

Watchdog

write to

Watchdog

32 Hz

32,768 KHz

Power Monitor

The CY14B101K provides a power management scheme with power fail interrupt capability. It also controls the internal switch to backup power for the clock and protect s the memory f rom low V

access. The power monitor is based on an internal band gap

reference circuit that compares the V threshold.

voltage to V

As described in the “AutoStore® Operation” on page 3, when V operation is initiated from SRAM to the nonvolatile elements,

is reached as VCC decays from power loss, a data store

SWITCH

securing the last SRAM data state. Power is also switched from V

to the backup supply (battery or capacitor) to operate the

RTC oscillator. When operating from the backup source, read and write opera-

tions to nvSRAM are inhibited and the clock functions are not available to the user. The clock continues to operate in the background. The updated clock data is available to the user t

HRECALL

“AutoStore or Power Up RECALL” on page 19).

delay after VCC is restored to the device (see

Interrupts

The CY14B101K has a Flags register, Interrupt register and Interrupt logic that can signal interrupt to the microcontroller. There are three potential sources for interrupt: watchdog ti mer, power monitor, and alarm timer. Each of these can be individually enabled to drive the INT pin by appropriate setting in the Interrupt register (0x1FFF6). In addition, each has an associated flag bit in the Flags register (0x1FFF0) that the host processor uses to determine the cause of the interrupt. The INT pin driver has two bits that specify its behavior when an interrupt occurs.

An Interrupt is raised only if both a flag is raised b y one of the three sources and the respective interrupt enable bit in Interrupts register is enabled (set to ‘1’). After an interrupt source is active, two programmable bits, H/L and P/L, determine the behavior of

SWITCH

the output pin driver on INT pin. These two bits are located in the Interrupt register and can be used to drive level or pulse mode output from the INT pin. In pulse mode, the pulse width is internally fixed at approximately 200 ms. This mode is intended to reset a host microcontroller. In the level mode, the pin goes to its active polarity until the Flags register is read by the user. This mode is used as an interrupt to a host microcontroller. The control bits are summarized in the following section.

Interrupt Register

Watchdog Interrupt Enable - WIE. When set to ‘1’, the

watchdog timer drives the INT pin and an internal flag when a watchdog time out occurs. When WIE is set to ‘0’, the watchdog timer only affects the WDF flag in Flags register.

Alarm Interrupt Enable - AIE. When set to ‘1’, the alarm match drives the INT pin and an internal flag. When AIE is set to ‘0’, the alarm match only affects the AF flagin Flags register.

Power Fail Interrupt Enable - PFE. When set to ‘1’, the power fail monitor drives the pin and an internal flag. When PFE is set to ‘0’, the power fail monitor only affects the PF flag in Flags register.

High/Low - H/L. When set to a ‘1’, the INT pin is active HIGH and the driver mode is push pull. The INT pin drives high only when V is active LOW and the drive mode is open drain. Active LOW

is greater than V

. When set to a ‘0’, the INT pin

SWITCH

(open drain) is operational even in battery backup mode. Pulse/Level - P/L. When set to a ‘1’ and an interrupt occurs, the

INT pin is driven for approximately 200 ms. When P/L is set to a ‘0’, the INT pin is driven high or low (determined by H/L) until the Flags or Control register is read.

When an enabled interrupt source activates the INT pin, an external host reads the Flags registers to determin e th e ca use . Remember that all flags are cleared when the register is read. If the INT pin is programmed for Level mode, then the condition clears and the INT pin returns to its inactive state. If the pin is programmed for Pulse mode, then reading the flag also clears the flag and the pin. The pulse does not complete its specified duration if the Flags register is read. If the INT pin is used as a host reset, then the Flags or Control register is not read during a reset.

Flags Register

The Flag register has three flag bits: WDF , AF , and PF, which can be used to generate an interrupt. These flags are set by the watchdog timeout, alarm match, or power fail monitor respectively. The processor can either poll this register or enable inter- rupts to be informed when a flag is set. These flags are automatically reset once the register is read. The flags register is automatically loaded with the value 00h on power up (except for the OSCF bit. See “Stopping and Starting the Oscillator” on page 7.)

Document Number: 001-06401 Rev. *I Page 9 of 28

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CY14B101K

Figure 5. Interrupt Block Diagram

WDF - Watchdog Timer Flag WIE - Watchdog Interrupt

PF - Power Fail Flag

PFE - Power Fail Enable AF - Alarm Flag

AIE - Alarm Interrupt Enable P/L - Pulse Level

H/L - High/Low

Enable

Watchdog

Timer

Power

Monitor

Clock

Alarm

VINT

WDF

WIE

PFE

AIE

P/L

Driver

H/L

INT

Recommended Values

Y1 = 32.768KHz RF = 10M Ohm C1 = 0 (install cap footprint, but leave unloaded) C2 = 56 pF +

10% (do not vary from this value)

Note

4. Schottky diodes, (V

< 0.4V at IF=100mA) are recommended at pins A0 - A3 and DQ0 in applications where undershoot exceeds -0.5V. Please see application note

AN49947 for further details.

Figure 6. RTC Recommended Component Configuration

Document Number: 001-06401 Rev. *I Page 10 of 28

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CY14B101K

T able 4. RTC Register Map

Notes

5. ( ) designates values shipped from the factory.

6. The unused bits of RTC registers are reserved for future use and should be set to ‘0’ .

7. Is a binary value, not a BCD value.

D7 D6 D5 D4 D3 D2 D1 D0

[5, 6]

BCD Format Data

[5]

Function/Range

0x1FFFF 10s Years Years Years: 00–99 0x1FFFE 0 0 0 10s Months Months Months: 01–12 0x1FFFD 0 0 10s Day of Month Day Of Month Day of Month: 01–31 0x1FFFC 0 0 0 0 0 Day of Week Day of Week: 01–07 0x1FFFB 0 0 10s Hours Hours Hours: 00–23

0x1FFFA 0 10s Minutes Minutes Minutes: 00–59

0x1FFF9 0 10s Seconds Seconds Seconds: 00–59

0x1FFF8 OSCEN

(0)

0 Cal Sign

(0)

Calibration (00000) Calibration Values

0x1FFF7 WDS (0) WDW (0) WDT (000000) Watchdog

0x1FFF6 WIE (0) AIE (0) PFE (0) 0 H/L (1) P/L (0) 0 0 Interrupts

[7]

0x1FFF5 M (1) 0 10s Alarm Date Alarm Day Alarm, Day of Month: 01–31

0x1FFF4 M (1) 0 10s Alarm Hours Alarm Hours Alarm, Hours: 00–23

0x1FFF3 M (1) 10 Alarm Minutes Alarm Minutes Alarm, Minutes: 00–59

0x1FFF2 M (1) 10 Alarm Seconds Alarm, Seconds Alarm, Seconds: 00–59

0x1FFF1 10s Centuries Centuries Centuries: 00–99

0x1FFF0 WDF AF PF OSCF 0 CAL (0) W (0) R (0) Flags

[7]

Document Number: 001-06401 Rev. *I Page 11 of 28

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CY14B101K

Table 5. Register Map Detail

D7 D6 D5 D4 D3 D2 D1 D0

0x1FFFF

Contains the lower two BCD digits of the year. Lower nibble (four bits) contains the value for years; upper nibble (four bits) contains the value for 10s of years. Each nibble operates from 0 to 9. The range for the register is 0–99.

D7 D6 D5 D4 D3 D2 D1 D0

0x1FFFE

0x1FFFD

0x1FFFC

0x1FFFB

0x1FFFA

0x1FFF9

0 0 0 10s Month Months

Contains the BCD digits of the month. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (one bit) contains the upper digit and operates from 0 to 1. The range for the register is 1–12.

D7 D6 D5 D4 D3 D2 D1 D0

0 0 10s Day of Month Day of Month

Contains the BCD digits for the date of the month. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (two bits) contains the 10s digit and operates from 0 to 3. The range for the register is 1–31. Leap years are automatically adjusted for.

D7 D6 D5 D4 D3 D2 D1 D0

0 0 0 0 0 Day of Week

Lower nibble (three bits) contains a value that correlates to day of the week. Day of the week is a ring counter that counts from 1 to 7 then returns to 1. The user must assign meaning to the day value, because the day is not integrated with the date.

D7 D6 D5 D4 D3 D2 D1 D0

0 0 10s Hours Hours

Contains the BCD value of hours in 24 hour format. Lower nibble (fou r bits) contains the lower digit and operates from 0 to 9; upper nibble (two bits) contains the upper digit and operates from 0 to 2. The range for the register is 0–23.

D7 D6 D5 D4 D3 D2 D1 D0

0 10s Minutes Minutes

Contains the BCD value of minutes. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (three bits) contains the upper minutes digit and operates from 0 to 5. The range for the register is 0–59.

D7 D6 D5 D4 D3 D2 D1 D0

0 10s Seconds Seconds

Contains the BCD value of seconds. Lower nibble (four bits) contains the lower digit and operates from 0 to 9; upper nibble (three bits) contains the upper digit and operates from 0 to 5. The range for the register is 0–59.

Time Keeping - Years

10s Years Years

Time Keeping - Months

Time Keeping - Date

Time Keeping - Day

Time Keeping - Hours

Time Keeping - Minutes

Time Keeping - Seconds

Document Number: 001-06401 Rev. *I Page 12 of 28

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CY14B101K

Table 5. Register Map Detail (continued)

Calibration/Control

0X1FFF8

OSCEN Oscillator Enable . When set to 1, the oscillator is stopped. When set to 0, the oscillator runs. Disabling the oscillator

Calibration

Sign

Calibration These five bits control the calibration of the clock.

0x1FFF7

WDS Watchdog Strobe. Setting this bit to 1 reloads and restarts the watchdog timer . Setting the bit to 0 has no ef fect. The bit

WDW Watchdog Write Enable. Setting this bit to 1 disables any WRITE to the watchdog timeout value (D5–D0). This allows

WDT Watchdog timeout selection. The watchdog timer interval is selected by the 6-bit value in this register. It represents a

0x1FFF6

WIE Watchdog Interrupt Enable. When set to 1 and a watchdog timeout occurs, the watchdog timer drives the INT pin and

AIE Alarm Interrupt Enable. When set to 1, the alarm match drives the INT pin and the AF flag. When set to 0, the alarm

PFIE Power Fail Enable. When set to 1, the alarm match drives the INT pin and the PF flag. When set to 0, the power fail

0 Reserved for future use H/L High/Low. When set to 1, the INT pin is driven active HIGH. When set to 0, the INT pin is open drain, active LOW. P/L Pulse/Level. When set to 1, the INT pin is driven active (determined by H/L) by an interrupt source for approximately

0x1FFF5

M Match. When this bit is set to 0, the date value is used in the alarm match. Setting this bit to 1 caus es th e mat ch c irc uit

D7 D6 D5 D4 D3 D2 D1 D0

OSCEN 0 Calibration

Sign

saves battery or capacitor power during storage. Determines if the calibration adjustment is applied as an addition (1) to or as a subtraction (0) from the time-base.

WatchDog Timer

D7 D6 D5 D4 D3 D2 D1 D0

WDS WDW WDT

is cleared automatically after the watchdog timer is reset. The WDS bit is write only. Reading it always returns a 0.

the user to set the watchdog strobe bit without disturbing the timeout value. Setting this bit to 0 allows bits D5–D0 to be written to the watchdog register when the next write cycle is complete. This function is explained in detail in the “Watchdog

Timer” on page 8.

multiplier of the 32 Hz count (31.25 ms). The range of timeout value is 31.25 ms (a setting of 1) to 2 seconds (setting of 3 Fh). Setting the watchdog timer register to 0 disables the timer. These bits can be written only if the WDW bit was set to 0 on a previous cycle.

Interrupt Status/Control

D7 D6 D5 D4 D3 D2 D1 D0

WIE AIE PFIE 0 H/L P/L 0 0

the WDF flag. When set to 0, the watchdog timeout affects only the WDF flag.

match only affects the AF flag.

monitor affects only the PF flag.

200 ms. When set to 0, the INT pin is driven to an active level (as set by H/L) until the flags register is read.

Alarm - Day

D7 D6 D5 D4 D3 D2 D1 D0

M 0 10s Alarm Date Alarm Date

Contains the alarm value for the date of the month and the mask bit to select or deselect the date value.

to ignore the date value.

Calibration

Document Number: 001-06401 Rev. *I Page 13 of 28

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CY14B101K

Table 5. Register Map Detail (continued)

Alarm - Hours

0x1FFF4

M Match. When this bit is set to 0, the hours value is used in the alarm match. Setting this bit to 1 causes the match circuit

0x1FFF3

M Match. When this bit is set to 0, the minutes value is used in the alarm match. Setting this bit to 1 causes the match

0x1FFF2

M Match. When this bit is set to 0, the seconds value is used in the alarm match. Setting this bit to 1 causes the match

0x1FFF1

0x1FFF0

WDF Watchdog Timer Flag. This read only bit is set to 1 when the watchdog timer is allowed to reach 0 without being reset

AF Alarm Flag. This read only bit is set to 1 when the time and date match the values stored in the alarm registers with the

PF Power Fail Flag. This read only bit is set to 1 when power falls below the power fail threshold V

OSCF Oscillator Fail Flag. Set to 1 on power up if the oscillator is enabled and not running in the first 5 ms of operation. This

CAL Calibration Mode. When set to 1, a 512 Hz square wave is output on the INT pin. When set to 0, the INT pin resumes

W Write Enable: Setting the W bit to 1 freezes updates of the RTC registers. The user can then write to RTC registers,

R Read Enable: Setting R bit to 1, stops clock updates to user RTC registers so that clock updates are not seen during

D7 D6 D5 D4 D3 D2 D1 D0

M 10s Alarm Hours Alarm Hours

Contains the alarm value for the hours and the mask bit to select or deselect the hours value.

to ignore the hours value.

Alarm - Minutes

D7 D6 D5 D4 D3 D2 D1 D0

M 10s Alarm Minutes Alarm Minutes

Contains the alarm value for the minutes and the mask bit to select or deselect the minutes value.

circuit to ignore the minutes value.

Alarm - Seconds

D7 D6 D5 D4 D3 D2 D1 D0

M 10s Alarm Seconds Alarm Seconds

Contains the alarm value for the seconds and the mask bit to select or deselect the seconds’ value.

circuit to ignore the seconds value.

Time Keeping - Centuries

D7 D6 D5 D4 D3 D2 D1 D0

10s Centuries Centuries

Contains the BCD value of centuries. Lower nibble contains the lower digit and operates from 0 to 9; upper nibble contains the upper digit and operates from 0 to 9. The range for the register is 0-99 centuries.

Flags

D7 D6 D5 D4 D3 D2 D1 D0

WDF AF PF OSCF 0 CAL W R

by the user. It is cleared to 0 when the Flags register is read or on power-up.

match bits = 0. It is cleared when the Flags register is read or on power-up.

. It is cleared to

0 when the Flags register is read or on power-up.

indicates that RTC backup power failed and clock value is no longer valid. The user must reset this bit to 0 to clear this condition (Flag). The chip does not clear this flag. This bit survives power cycles.

normal operation. This bit defaults to 0 (disabled) on power up.

Alarm registers, Calibration register, Interrupt register and Flags register. Setting the W bit to 0 causes the contents of the RTC registers to be transferred to the time keeping counters if the time has been changed (a new base time is loaded). This bit defaults to 0 on power up.

the reading process. Set R bit to 0 to resume clock updates to the holding register. Setting this bit does not require W bit to be set to 1. This bit defaults to 0 on power up.

SWITCH

Document Number: 001-06401 Rev. *I Page 14 of 28

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CY14B101K

Maximum Ratings

Notes

8. The HSB

pin has I

OUT

= –10 μA for VOH of 2.4 V , this parameter is characterized but not tested.

9. The INT pin is open drain and does not source or sink current when interrupt register bit D3 is low.

10.V

changes by 100 mV when VCC > 3.5V.

Exceeding maximum ratings may impair the useful life of th e device. These user guidelines are not tested.

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage on V

Relative to GND..........–0.5V to 4.1V

Package Power Dissipation Capability (T

= 25°C)...................................................1.0W

Surface Mount Pb Soldering

Temperature (3 Seconds).......................................... +260°C

DC Output Current (1 output at a time, 1s duration) ... 15 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch Up Current................................................... > 200 mA

Voltage Applied to Outputs

in High Z State.......................................–0.5V to V

Input Voltage...........................................–0.5V to Vcc + 0.5V

Transient Voltage (<20 ns) on

Any Pin to Ground Potential..................–2.0V to V

+ 0.5V

+ 2.0V

Operating Range

Range Ambient Temperature V

Commercial 0°C to +70°C 2.7V to 3.6V Industrial –40°C to +85°C

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)

Parameter Description Test Conditions Min Max Unit

CC1

Average VCC Current tRC = 25 ns

Dependent on output loading and cycle rate. Values obtained without output loads. I

OUT

[8, 9]

= 35 ns = 45 ns

= 0 mA.

Commercial 65

55 50

Industrial 70

60 55

mA mA

CC2

CC3

CC4

V V V V V

IH IL OH OL CAP

[10]

Average VCC Current during STORE

Average VCC Current at

= 200 ns, 3V, 25°C

AVAV

Typical Average V

during AutoStore Cycle

CAP

Current

VCC Standby Current WE > (VCC – 0.2V). All others V

All Inputs Do Not Care, VCC = Max Average current for duration t

> (VCC – 0.2V). All other inputs cycling.

STORE

Dependent on output loading and cycle rate. V alues obtained without output loads.

All Inputs Do Not Care, VCC = Max Average current for duration t

(VCC–0.2V). Standby current level after nonvolatile

STORE

< 0.2V or

6mA

10 mA

3mA

cycle is complete. Inputs are static. f = 0 MHz Input Leakage Current VCC = Max, VSS < V Off State Output Leakage

VCC = Max, VSS < V Current

< V

< VCC, CE or OE > V

–1 +1 μA

Input HIGH Volt age 2.0 VCC + 0.5 V Input LOW Volt age VSS – 0.5 0.8 V Output HIGH Voltage I Output LOW Voltage I Storage Capacitor Between V

= –2 mA 2.4 V

OUT

= 4 mA 0.4 V

OUT

pin and VSS, 5V rated 17 120 μF

CAP

Document Number: 001-06401 Rev. *I Page 15 of 28

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CY14B101K

Data Retention and Endurance

3.0V

OUTPUT

5 pF

R1 577

789

3.0V

OUTPUT

30 pF

R1 577

789

For Tri-state Specs

Input Pulse Levels..................................................0 V to 3 V

Input Rise and Fall Times (10% - 90%)........................ <

5 ns

Input and Output Timing Reference Levels................... 1.5 V

Parameter Description Min Unit

DATA NV

Data Retention 20 Years Nonvolatile STORE Operations 200 K

Capacitance

These parameters are guaranteed but not tested.

Parameter Description Test Conditions Max Unit

C C

IN OUT

Input Capacitance TA = 25°C, f = 1 MHz,

= 0 to 3.0 V

Output Capacitance 7 pF

7pF

Thermal Resistance

These parameters are guaranteed but not tested.

Parameter Description Test Conditions 48-SSOP Unit

Thermal Resistance

(junction to ambient) Thermal Resistance

(junction to case)

Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51.

Figure 7. AC Test Loads

34.85 °C/W

16.35 °C/W

AC Tes t Conditions

Document Number: 001-06401 Rev. *I Page 16 of 28

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CY14B101K

AC Switching Characteristics

2+$

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'4'$7$287

'$7$9$/,'

$''5(66

$&(

/=&(

+=&(

'2(

/=2(

+=2(

'$7$9$/,'

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,&&

Notes

11. WE

is HIGH during SRAM Read Cycles.

12.Device is continuously selected with CE and OE both Low.

13.Measured ±200 mV from steady state output voltage.

14.These parameters are guaranteed by design and are not tested.

15.HSB

must remain HIGH during READ and WRITE cycles.

Parameter

Cypress

Parameter

SRAM Read Cycle

ACE

DOE

OHA

LZCE

HZCE

LZOE

HZOE

[11]

[12]

[13]

[13] [14] [14]

ELQV

AVAV, tELEH

AVQV

GLQV

AXQX

ELQX

EHQZ

GLQX

GHQZ

ELICCH

EHICCL

Alt.

Chip Enable Access Time 25 35 45 ns Read Cycle Time 25 35 45 ns Address Access Time 25 35 45 ns Output Enable to Data Valid 12 15 20 ns Output Hold After Address Change 3 3 3 ns Chip Enable to Output Active 3 3 3 ns Chip Disable to Output Inactive 10 13 15 ns Output Enable to Output Active 0 0 0 ns Output Disable to Output Inactive 10 13 15 ns Chip Enable to Power Active 0 0 0 ns Chip Disable to Power Standby 25 35 45 ns

Description

Figure 8. SRAM Read Cycle 1: Address Controlled

25 ns 35 ns 45 ns

Min Max Min Max Min Max

[11, 12, 15]

Unit

Figure 9. SRAM Read Cycle 2: CE and OE Controlled

Document Number: 001-06401 Rev. *I Page 17 of 28

[11, 15]

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CY14B101K

AC Switching Characteristics (continued)

SCE

PWE

HZWE

LZWE

ADDRESS

DATA IN

DATA OUT

DATA VALID

HIGH IMPEDANCE

PREVIOUS DATA

ADDRESS

SCE

PWE

DATA IN

DATA OUT

HIGH IMPEDANCE

DATA VALID

Notes

16.If WE

is Low when CE goes Low, the outputs remain in the High Impedance State.

17.CE

or WE are greater than VIH during address transitions.

Parameter

Cypress

Parameter

SRAM Write Cycle

PWE

SCE

HZWE

LZWE

[13, 16]

[13]

t t t t t t t t t t

Alt.

Parameter

AVAV WLWH, tWLEH ELWH, tELEH DVWH, tDVEH WHDX, tEHDX AVWH, tAVEH AVWL, tAVEL WHAX, tEHAX WLQZ WHQX

Write Cycle Time 25 35 45 ns Write Pulse Width 20 25 30 ns Chip Enable To End of Write 20 25 30 ns Data Setup to End of Write 10 12 15 ns Data Hold After End of Write 0 0 0 ns Address Setup to End of Write 20 25 30 ns Address Setup to Start of Write 0 0 0 ns Address Hold After End of Write 0 0 0 ns Write Enable to Output Disable 10 13 15 ns Output Active After End of Write 3 3 3 ns

Description

Figure 10. SRAM Write Cycle 1: WE Controlled

25 ns 35 ns 45 ns

Min Max Min Max Min Max

[15, 17]

Unit

Document Number: 001-06401 Rev. *I Page 18 of 28

Figure 11. SRAM Write Cycle 2: CE Controlled

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CY14B101K

AutoStore or Power Up RECALL

SWITCH

STORE

HRECALL

AutoStore

POWER-UP RECALL

Read & Write Inhibited

STORE occurs only if a SRAM write has happened

No STORE occurs without atleast one SRAM write

VCCRISE

Notes

18.t

HRECALL

starts from the time V

rises above V

SWITCH

19.If an SRAM Write does not taken place since the last nonvolatile cycle, no STORE takes place.

20.Industrial Grade Devices require 15 ms Max.

Parameter Description

HRECALL

STORE

SWITCH

VCCRISE

[18]

[19, 20]

Power Up RECALL Duration 40 ms STORE Cycle Duration Commercial 12.5 ms

Low Voltage Trigger Level 2.65 V VCC Rise Time 150 μs

CY14B101K

Min Max

Industrial 15 ms

Figure 12. AutoStore/Power Up RECALL

Unit

Document Number: 001-06401 Rev. *I Page 19 of 28

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CY14B101K

Software Controlled STORE/RECALL Cycles

SCE

STORE

/ t

RECALL

DATA VALID

6#SSERDDA1#SSERDDA

HIGH IMPEDANCE

ADDRESS

DQ (DATA)

Notes

21.The software sequence is clocked with CE

controlled or OE controlled READs.

22.The six consecutive addresses are read in the order listed in the Table 2 on page 6. WE

is HIGH during all six consecutive cycles.

Parameter

RECALL

Alt.

Parameter

AVAV

AVEL

ELEH

EHAX

Description

STORE/RECALL Initiation Cycle Time

Address Setup Time 0 0 0 ns Clock Pulse Width 20 25 30 ns Address Hold Time 1 1 1 ns RECALL Duration 170 170 170 μs

[21, 22]

25 ns 35 ns 45 ns

Min Max Min Max Min Max

25 35 45 ns

Unit

ADDRESS

Figure 13. CE

Controlled Software STORE/RECALL Cycle

Figure 14. OE Controlled Software STORE/RECALL Cycle

6#SSERDDA1#SSERDDA

[22]

DQ (DATA)

SCE

DATA VALID

Document Number: 001-06401 Rev. *I Page 20 of 28

DATA VALID

/ t

STORE

HIGH IMPEDANCE

RECALL

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CY14B101K

Hardware STORE Cycle

+/+;

6725(

+/%/

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3+6%

Notes

23.This is the amount of time it takes to take action on a soft sequence command. Vcc power must remain HIGH to effectively register command.

24.Commands such as STORE and RECALL lock out IO until operation is complete which further increases this time. See specific command.

25.Read and Write cycles in progress before HSB

are given this amount of time to complete.

Parameter

[25]

DELAY

PHSB

Alt.

Parameter

HLHX

Time Allowed to Complete SRAM Cycle 1 70 μs Hardware STORE Pulse Width 15 ns

Soft Sequence Commands

Description

Figure 15. Hardware STORE Cycle

CY14B101K

Min Max

Unit

Parameter Description

[22, 24]

Soft Sequence Processing Time 70 μs

6RIW6HTXHQFH

&RPPDQG

$GGUHVV

$GGUHVV $GGUHVV $GGUHVV $GGUHVV

Min Max

Figure 16. Soft Sequence Processing

6RIW6HTXHQFH

&RPPDQG

CY14B101K

[22, 24]

Unit

Document Number: 001-06401 Rev. *I Page 21 of 28

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CY14B101K

RTC Characteristics

Notes

26.From either V

RTCcap

or V

RTCbat.

27.Typical = 3.0V during normal operation.

28.Typical = 2.4V during normal operation.

Parameter Description Test Conditions Min Max Unit

[26]

BAK

RTC Backup Current Commercial 300 nA

Industrial 350 nA

RTCbat RTCcap

[27]

[28]

RTC Battery Pin V o ltage 1.8 3.3 V RTC Capacitor Pin Voltage 1.2 2.7 V

V V tOCS RTC Oscillator Time to Start At Min Temperature from Power up or Enable 10 sec

At 25°C Temperature from Power up or Enable 5 sec

Truth Table For SRAM Operations

HSB should remain HIGH for SRAM Operations.

CE WE OE Inputs and Outputs Mode Power

H X X High Z Deselect/Power down Standby

L H L Data Out (DQ L H H High Z Output Disabled Active L L X Data in (DQ

–DQ7); Read Active

–DQ7); Write Active

Document Number: 001-06401 Rev. *I Page 22 of 28

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CY14B101K

Part Numbering Nomenclature

Option: T - Tape and Reel Blank - Std.

Speed: 25 - 25 ns

Data Bus: K - x8 + RTC

Density:

101 - 1 Mb

Voltage:

B - 3.0V

Cypress

NVSRAM

14 - AutoStore + Software Store + Hardware Store

Package:

SP - 48 SSOP

35 - 35 ns

Temperature:

C - Commercial (0 to 70°C)

I - Industrial (–40 to 85°C)

Pb-Free

CY 14 B 101 K - SP 25 X C T

45 - 45 ns

Document Number: 001-06401 Rev. *I Page 23 of 28

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CY14B101K

Ordering Information

All the below mentioned parts are Pb-free. Please contact your local Cypress sales representative for availability of these parts.

Speed

(ns)

25 CY14B101K-SP25XC 51-85061 48-pin SSOP Commercial

CY14B101K-SP25XCT CY14B101K-SP25XI 51-85061 48-pin SSOP Industrial CY14B101K-SP25XIT

35 CY14B101K-SP35XC 51-85061 48-pin SSOP Commercial

CY14B101K-SP35XCT CY14B101K-SP35XI 51-85061 48-pin SSOP Industrial CY14B101K-SP35XIT

45 CY14B101K-SP45XC 51-85061 48-pin SSOP Commercial

CY14B101K-SP45XCT CY14B101K-SP45XI 51-85061 48-pin SSOP Industrial CY14B101K-SP45XIT

Ordering Code

Package Diagram

Package Type

Operating

Range

Document Number: 001-06401 Rev. *I Page 24 of 28

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CY14B101K

Package Diagrams

51-85061-*C

Figure 17. 48-Pin Shrunk Small Outline Package (51-85061)

Document Number: 001-06401 Rev. *I Page 25 of 28

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CY14B101K

Document History Page

Document Title: CY14B101K 1 Mbit (128K x 8) nvSRAM With Real Time Clock Document Number: 001-06401

REV. ECN NO. Orig. of Change

** 425138 TUP See ECN New data sheet *A 437321 TUP See ECN Show data sheet on External Web *B 471966 TUP See ECN Changed I

*C 503272 PCI See ECN Changed from Advance to Preliminary

*D 597002 TUP See ECN Removed V

*E 688776 VKN See ECN Added footnote 7 related to HSB

*F 1349963 UHA/SFV See ECN Changed from Preliminary to Final

*G 1739984 vsutmp8/AESA See ECN Added Pinout diag ram and Pin definition Table *H 2427986 GVCH/PYRS 04/2 3/08 Move to external web

Submission

Date

Description of Change

from 5 mA to 10 mA Changed ISB from 2 mA to 3 mA Changed V Changed t Changed Endurance from 1 million Cycles to 500K Cycles

CC3

from 2.2V to 2.0V

IH(min)

from 40 ms to 100 ms

RECALL

Changed Data Retention from 100 years to 20 years Added Soft Sequence Processing Time Waveform Updated Part Numbering Nomenclature and Ordering Information Added RTC Characteristics Table Added RTC Recommended Component Configuration

Changed the term “Unlimited” to “Infinite” Changed Endurance from 500K Cycles to 200K Cycles Added temperature spec. to Data Retention - 20 years at 55×C Removed Icc1 values from the DC table for 25 ns and 35 ns Industrial Grade Changed Icc2 value from 3 mA to 6 mA in the DC Table Added a footnote on V Added footnote 18 related to using the software command Changed V Updated Part Nomenclature Table and Ordering Information

SWITCH(min)

from 2.55V to 2.45V

Table

Up RECALL Table Changed t Added t Cycle Table Removed t Changed tSS specification form 70 ms (min) to 70 ms (max) Changed V

SWITCH(min)

specification from 20 ns to 1 ns

GLAX

DELAY(max)

specification

HLBL

CAP(max)

specification from the AutoStore/Power

specification of 70 ms in the Hardware STORE

from 57 mF to 120 mF

Added footnote 8 related to INT pin Changed t Removed ABE bit from interrupt register

GLAX

to t

GHAX

Added Note 5 regarding the W bit in the Flag register Updated Ordering Information Table

Document Number: 001-06401 Rev. *I Page 26 of 28

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CY14B101K

Document Title: CY14B101K 1 Mbit (128K x 8) nvSRAM With Real Time Clock Document Number: 001-06401

REV. ECN NO. Orig. of Change

Submission

Date

*I 2663934 GVCH/PYRS 02/24/09 Updated Features

Updated pin definition of WE Removed AutoStore enable/disable section Added Best practices Updated “Reading the clock”, “Backup Power”, “Stopping and starting the Oscillator” and “Alarm” descriptions under RTC operation Modified “Figure 4. RTC Recommended Component Configuration” Added footnotes 4, 5 and 6 Added default values to RTC Register Map” table Updated flag register description in Register Map Detail” table Added Industrial specs for 25ns and 35ns speed Changed V Added “Data Retention and Endurance” table on page 15

from Vcc+0.3 to Vcc+0.5

Added Thermal resistance values Added alternate parameters in the AC switching characteristics table Renamed t Changed t Changed t 70us)

to t

OH HRECALL RECALL

Renamed tAS to t Renamed t Updated Figure 13, 14, 15 and 16 Renamed t Added truth table for SRAM operations

GHAX

HLHX

to t

Description of Change

OHA

from 20 to 40ms

spec from 100μs to 170μs (Including tss of

PHSB

Document Number: 001-06401 Rev. *I Page 27 of 28

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CY14B101K

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© Cypress Semiconductor Corporation, 2006-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life sa vin g, critical control or safety applica ti ons, unless pursuant to an express written ag re em ent with Cypress. Furthermore, Cypress doe s no t a uth or i ze i ts products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States co pyright la ws and inte rnatio na l tre aty prov isi ons. Cyp ress he reby g rant s to lice nsee a p erson al, no n-ex clusi ve, non-tra nsferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpo se of creating custom sof tware and or firm ware in support of licen see product to be use d only in conjunction with a Cypress integrated circuit as specified in th e applicable agreement. Any reproductio n, modification, translation, co mpilation, o r representati on of this Sour ce Code except as specified above is prohibited without the express written permission of Cypress.

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the ap plicati on or u se o f any pr oduct o r circui t descri bed h erein. Cypr ess does not aut horize it s product s for use a s critical compo nent s in life-support systems whe re a malfunction or failure may reasonab ly be expected to resu lt in significant injury t o the user. The inclusion of Cypress’ prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Document Number: 001-06401 Rev. *I Revised February 24, 2009 Page 28 of 28

AutoStore and QuantumTrap are registered trademarks of Cypress Semiconductor Corporation. All products and company names mentioned in this document are the trademarks of their respective holders.

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Cypress CY14B101K User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

Logic Block Diagram

Functional Description

Pin Configurations

Device Operation

SRAM READ

SRAM WRITE

AutoStore® Operation

Hardware STORE (HSB) Operation

Hardware RECALL (Power Up)

Software STORE

Software RECALL

Data Protection

Noise Considerations

Low Average Active Power

Best Practices

Real Time Clock Operation

nvTIME Operation

Clock Operations

Reading the Clock

Setting the Clock

Backup Power

Stopping and Starting the Oscillator

Calibrating the Clock

Alarm

Watchdog Timer

Power Monitor

Interrupts

Interrupt Register

Flags Register

Maximum Ratings

Operating Range

DC Electrical Characteristics

Data Retention and Endurance

Capacitance

Thermal Resistance

AC Tes t Conditions

AC Switching Characteristics

AC Switching Characteristics (continued)

AutoStore or Power Up RECALL

Hardware STORE Cycle

Soft Sequence Commands

RTC Characteristics

Truth Table For SRAM Operations

Part Numbering Nomenclature

Ordering Information

Package Diagrams

Document History Page

Sales, Solutions, and Legal Information

Worldwide Sales and Design Support

Products

PSoC Solutions