Cypress AN49947 User Manual
Undershoot Effect in RTC Circuit
EDS DIODE
CONDUCTION
0V
-2V
3.3V
Conduction
ESD Diode
of 0.25μ nvSRAM
AN49947
Associated Part Family: CY14BXXXK/STK17TX8
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Application Note Abstract
This application note describes the undershoot effect in the RTC circuit of the 256K and 1M nvSRAM in 0.25μ technology. The
part numbers affected are CY14B256K/STK17T88 and CY14B101K/STK17TA8.
Introduction
Under certain noise conditions, the Real Time Clock (RTC)
circuit of CY14BXXXK/STK17TX8 can be disturbed to the
point that the oscillator circuit stops.
Undershoot in Application
The RTC devices in 0.25μ specify in the data sheet that
inputs may not undershoot by more than –0.5V. This is difficult to achieve in systems where signal fall times are fast (1
to 3 ns). As a result of these fast fall times, signal undershoot
greater than –0.5V is quite common.
Signal undershoot greater than –0.5V causes the ESD
diodes on the device inputs to conduct current. This current
travels through the substrate until it reaches collection points
(guard bands with substrate contacts). However, as this current flows within the substrate, it adds noise to the overall
noise floor on the device.
Figure 1. Signal Undershoot
Effect on RTC Oscillator
The RTC oscillator circuit, which is embedded on the 256K
and 1M nvSRAM family is designed to be a very low power
circuit. To achieve this low power operation, the automatic
gain circuit of the oscillator is designed to operate on very
small currents (nano-Amperes). This makes the gain circuit
sensitive to on-chip noise, which in turn makes the RTC oscillator circuit very sensitive to substrate currents caused by signal undershoot.
There have been reports of the oscillator stopping in some
customer systems. Investigation showed that these systems
all had a significant amount of undershoot. Correcting the
undershoot on the input pins corrected the problem. The
address pins A
of the RTC oscillator circuit. Undershoot on these address
pins has the greatest effect on the RTC circuit operation. It is
recommended that customers experiencing similar problems
investigate and correct undershoot issues.
and data pin DQ0 are located in the area
0-A3
Recommendation
Undershoot can be reduced by adding a Schottky diode (VF <
0.4V with I
and cathode on the signal line as close to the device pin as
possible. Layout must route the signals to connect to the
diode first then the pin if possible. The anode to ground
should go directly to the ground plane. The only signals th at
require this treatment are A
must be used to confirm controlled undershoot as some fast
edge rates may need more effective termination. It is critical
that the voltage does not go below 0.6V as substrate currents
begin to flow.
at 100 mA) connected with the anode at ground
F
, A1, A2, A3, and DQ0. A scope
0
November 06, 2008 Document # 001-49947 Revision ** 1
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Document History
Document Title: Undershoot Effect in RTC Circuit of 0.25μ nvSRAM
Document Number: 001-49947
Revision ECN No.
Change
** 2606848 NXR 11/13/08 New application note
Orig. of
Submission
Date Description of Change
AN49947
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November 06, 2008 Document # 001-49947 Revision ** 2
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